N-Channel Logic Level UltraFET® Power MOSFET
60V, 4.8A, 56mΩ
Features
General Description
150°C Maximum Junction Temperature
These N-Channel power MOSFETs are manufactured using the
innovative UltraFET® process. This advanced process
technology achieves the lowest possible onresistance per silicon
area, resulting in outstanding performance. This device is
capable of withstanding high energy
in the avalanche mode and the diode exhibits very low reverse
recovery time and stored charge. It was designed for use in
applications where power efficiency is important, such as
switching regulators, switching convertors, motor drivers, relay
drivers, low-voltage bus switches, and power management in
portable and battery-operated products.
UIS Capability (Single Pulse and Repetitive Pulse)
Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V
Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V
Qualified to AEC Q101
RoHS Compliant
Applications
Motor and Load Control
Powertrain Management
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
60
Units
V
VGS
Gate to Source Voltage
±16
V
Drain Current
-Continuous (TC = 25 °C, VGS = 10V)
5.1
-Continuous (TC = 25 °C, VGS = 5V)
4.8
ID
EAS
PD
TJ, TSTG
-Continuous (TC = 125 °C, VGS = 5V, RJA = 228°C/W)
A
1
-Pulsed
Figure 4
Single Pulse Avalanche Energy (Note 1)
260
Power Dissipation
2.5
W
Derate Above 25 °C
0.02
W/°C
-55 to +150
°C
Operating and Storage Temperature
mJ
Thermal Characteristics
RJA
Thermal Resistance Junction to Ambient SO-8 (Note 2)
50
Thermal Resistance Junction to Ambient SO-8 (Note 3)
191
Thermal Resistance Junction to Ambient SO-8 (Note 4)
228
°C/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
HUFA76413DK8T-F085
SO-8
330mm
12mm
2500 units
76413DK8
Notes:
1: Starting TJ = 25 °C, L = 20mH, IAS = 5.1A
2: RθJA is 50 °C/W when mounted on a 0.5 in2 copper pad on FR-4 at 1 second.
3: RθJA is 191 °C/W when mounted on a 0.027 in2 copper pad on FR-4 at 1000 seconds.
4: RθJA is 228 °C/W when mounted on a 0.006 in2 copper pad on FR-4 at 1000 seconds.
5: A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor
has officially announced in Aug 2014.
©2016 Semiconductor Components Industries, LLC.
September-2017, Rev. 3
Publication Order Number:
HUFA76413DK8T-F085/D
HUFA76413DK8T-F085 N-Channel Logic Level UltraFET® Power MOSFET
HUFA76413DK8T-F085
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 A, VGS = 0 V
60
-
-
-
-
1
-
-
250
-
±100
nA
V
IDSS
Zero Gate Voltage Drain Current
VDS = 55 V,
VGS = 0 V
IGSS
Gate to Source Leakage Current
VGS = ±16 V
-
VGS = VDS, ID = 250 A
1
-
3
ID = 5.1 A, VGS = 10 V
-
0.041
0.049
TA = 150 °C
A
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Static Drain to Source On Resistance
ID = 4.8 A, VGS = 5 V
-
0.048
0.056
ID = 4.8 A, VGS = 5 V, TA = 150 °C
-
0.091
0.106
VDS = 25 V, VGS = 0 V,
f = 1MHz
-
620
-
pF
-
180
-
pF
-
30
-
pF
VGS = 0 to 10 V
-
18
23
nC
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(TOT)
Total Gate Charge at 10V
Qg(5)
Total Gate Charge at 5V
VGS = 0 to 5 V
Qg(TH)
Threshold Gate Charge
VGS = 0 to 1 V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 30 V,
ID = 4.8 A,
Ig = 1.0 mA
-
10
13
-
0.6
0.8
nC
-
1.8
-
nC
-
5
-
nC
Switching Characteristics (VGS=5V)
ton
Turn-On Time
-
-
44
ns
td(on)
Turn-On Delay Time
-
10
-
ns
-
19
-
ns
-
45
-
ns
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
-
27
-
ns
toff
Turn-Off Time
-
-
108
ns
ISD = 4.8 A
-
-
1.25
ISD = 2.4 A
-
-
1.0
-
-
43
ns
-
-
55
nC
VDD = 30 V, ID = 1.0 A,
VGS = 5 V, RGS = 16
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 4.8 A, dISD/dt = 100 A/s
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2
V
HUFA76413DK8T-F085 N-Channel Logic Level UltraFET® Power MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs. Ambient
Temperature
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
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3
HUFA76413DK8T-F085 N-Channel Logic Level UltraFET® Power MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching Capability
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
Figure 9. Drain to Source On Resistance vs. Gate
Voltage and Drain Current
Figure 10. Normalized Drain to Source On
Resistance vs. Junction Temperature
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4
HUFA76413DK8T-F085 N-Channel Logic Level UltraFET® Power MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 11. Normalized Gate Threshold Voltage vs.
Junction Temperature
Figure 12. Normalized Drain to Source Breakdown
Voltage vs. Junction Temperature
Figure 13. Capacitance vs. Drain to Source Voltage
Figure 14. Gate Charge Waveforms for Constant Gate
Currents
Figure 16.
Figure 15. Switching Time vs Gate Resistance
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5
HUFA76413DK8T-F085 N-Channel Logic Level UltraFET® Power MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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