HUFA76413DK8T-F085

N-Channel Logic Level UltraFET® Power MOSFET 60V, 4.8A, 56mΩ Features General Description  150°C Maximum Junction Temperature These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.  UIS Capability (Single Pulse and Repetitive Pulse)  Ultra-Low On-Resistance rDS(ON) = 0.049Ω, VGS = 10V  Ultra-Low On-Resistance rDS(ON) = 0.056Ω, VGS = 5V  Qualified to AEC Q101  RoHS Compliant Applications  Motor and Load Control  Powertrain Management MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 60 Units V VGS Gate to Source Voltage ±16 V Drain Current -Continuous (TC = 25 °C, VGS = 10V) 5.1 -Continuous (TC = 25 °C, VGS = 5V) 4.8 ID EAS PD TJ, TSTG -Continuous (TC = 125 °C, VGS = 5V, RJA = 228°C/W) A 1 -Pulsed Figure 4 Single Pulse Avalanche Energy (Note 1) 260 Power Dissipation 2.5 W Derate Above 25 °C 0.02 W/°C -55 to +150 °C Operating and Storage Temperature mJ Thermal Characteristics RJA Thermal Resistance Junction to Ambient SO-8 (Note 2) 50 Thermal Resistance Junction to Ambient SO-8 (Note 3) 191 Thermal Resistance Junction to Ambient SO-8 (Note 4) 228 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity HUFA76413DK8T-F085 SO-8 330mm 12mm 2500 units 76413DK8 Notes: 1: Starting TJ = 25 °C, L = 20mH, IAS = 5.1A 2: RθJA is 50 °C/W when mounted on a 0.5 in2 copper pad on FR-4 at 1 second. 3: RθJA is 191 °C/W when mounted on a 0.027 in2 copper pad on FR-4 at 1000 seconds. 4: RθJA is 228 °C/W when mounted on a 0.006 in2 copper pad on FR-4 at 1000 seconds. 5: A suffix as “…F085P” has been temporarily introduced in order to manage a double source strategy as ON Semiconductor has officially announced in Aug 2014. ©2016 Semiconductor Components Industries, LLC. September-2017, Rev. 3 Publication Order Number: HUFA76413DK8T-F085/D HUFA76413DK8T-F085 N-Channel Logic Level UltraFET® Power MOSFET HUFA76413DK8T-F085 Symbol Parameter Test Conditions Min Typ Max Units V Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V 60 - - - - 1 - - 250 - ±100 nA V IDSS Zero Gate Voltage Drain Current VDS = 55 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±16 V - VGS = VDS, ID = 250 A 1 - 3 ID = 5.1 A, VGS = 10 V - 0.041 0.049 TA = 150 °C A On Characteristics VGS(th) rDS(on) Gate to Source Threshold Voltage Static Drain to Source On Resistance  ID = 4.8 A, VGS = 5 V - 0.048 0.056 ID = 4.8 A, VGS = 5 V, TA = 150 °C - 0.091 0.106 VDS = 25 V, VGS = 0 V, f = 1MHz - 620 - pF - 180 - pF - 30 - pF VGS = 0 to 10 V - 18 23 nC nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(TOT) Total Gate Charge at 10V Qg(5) Total Gate Charge at 5V VGS = 0 to 5 V Qg(TH) Threshold Gate Charge VGS = 0 to 1 V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 30 V, ID = 4.8 A, Ig = 1.0 mA - 10 13 - 0.6 0.8 nC - 1.8 - nC - 5 - nC Switching Characteristics (VGS=5V) ton Turn-On Time - - 44 ns td(on) Turn-On Delay Time - 10 - ns - 19 - ns - 45 - ns tr Rise Time td(off) Turn-Off Delay Time tf Fall Time - 27 - ns toff Turn-Off Time - - 108 ns ISD = 4.8 A - - 1.25 ISD = 2.4 A - - 1.0 - - 43 ns - - 55 nC VDD = 30 V, ID = 1.0 A, VGS = 5 V, RGS = 16  Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 4.8 A, dISD/dt = 100 A/s www.onsemi.com 2 V HUFA76413DK8T-F085 N-Channel Logic Level UltraFET® Power MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Figure 1. Normalized Power Dissipation vs. Ambient Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature Figure 3. Normalized Maximum Transient Thermal Impedance Figure 4. Peak Current Capability www.onsemi.com 3 HUFA76413DK8T-F085 N-Channel Logic Level UltraFET® Power MOSFET Typical Characteristics TJ = 25°C unless otherwise noted Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics Figure 9. Drain to Source On Resistance vs. Gate Voltage and Drain Current Figure 10. Normalized Drain to Source On Resistance vs. Junction Temperature www.onsemi.com 4 HUFA76413DK8T-F085 N-Channel Logic Level UltraFET® Power MOSFET Typical Characteristics TJ = 25°C unless otherwise noted Figure 11. Normalized Gate Threshold Voltage vs. Junction Temperature Figure 12. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Figure 13. Capacitance vs. Drain to Source Voltage Figure 14. Gate Charge Waveforms for Constant Gate Currents Figure 16. Figure 15. Switching Time vs Gate Resistance www.onsemi.com 5 HUFA76413DK8T-F085 N-Channel Logic Level UltraFET® Power MOSFET Typical Characteristics TJ = 25°C unless otherwise noted ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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