IRF644B — N-Channel BFET MOSFET
IRF644B
N-Channel BFET MOSFET
250 V, 14 A, 280 mΩ
Features
Description
• 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using ON Semiconductor’s
proprietary, planar, DMOS technology. This advanced
technology has been especially tailored to minimize onstate
resistance,
provide
superior
switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are
well suited for high efficiency switching DC/DC
converters and switch mode power supplies.
• Low gate charge (Typ. 47 nC)
• Low Crss (Typ. 30 pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
D
G
D
S
Absolute Maximum Ratings
Symbol
VDSS
ID
G
TO-220
TC = 25°C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
S
IRF644B_FP001
250
Unit
V
14
A
8.9
A
56
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
480
mJ
IAR
Avalanche Current
(Note 1)
14
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
13.9
4.8
139
1.11
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
IRF644B-FP001
0.9
Unit
°C/W
dv/dt
PD
TJ, TSTG
TL
- Derate Above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
(Note 3)
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink
0.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
©2001Semiconductor Components Industries, LLC.
September-2017,Rev33
Publication Order Number:
IRF644B-FP001/D
Part Number
IRF644B-FP001
Top Mark
IRF644B
Package
TO-220
Electrical Characteristics
Symbol
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
TC = 25°C unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
250
--
--
V
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
ΔBVDSS
/
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, Referenced to 25°C
--
0.24
IDSS
Zero Gate Voltage Drain Current
VDS = 250 V, VGS = 0 V
--
--
10
μA
VDS = 200 V, TC = 125°C
--
--
100
μA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 7.0 A
--
0.22
0.28
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 7.0 A
--
11.7
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1250
1600
pF
--
150
195
pF
--
30
40
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 125 V, ID = 14 A,
RG = 25 Ω
)
(Note 4)
VDS = 200 V, ID = 14 A,
VGS = 10 V
(Note 4)
--
20
50
ns
--
115
240
ns
--
150
310
ns
--
95
200
ns
--
47
60
nC
--
6.2
--
nC
--
23
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
14
A
ISM
--
--
56
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 14 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
240
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 14 A,
dIF / dt = 100 A/μs
--
1.96
--
μC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 3.9 mH, IAS = 14 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 14 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
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2
IRF644B — N-Channel BFET MOSFET
Package Marking and Ordering Information
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Top :
1
ID, Drain Current [A]
ID, Drain Current [A]
1
10
0
10
10
o
150 C
o
25 C
0
10
o
-55 C
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 40V
2. 250μs Pulse Test
-1
-1
10
-1
0
10
10
1
10
2
10
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS = 10V
1.2
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
1.5
VGS = 20V
0.9
0.6
0.3
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
0.0
-1
0
10
20
30
40
50
10
0.2
0.4
0.6
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
1500
Coss
1000
Crss
1.2
1.4
1.6
1.8
12
VGS, Gate-Source Voltage [V]
Ciss
2000
1.0
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
VDS = 50V
10
2500
Capacitance [pF]
0.8
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
500
VDS = 125V
VDS = 200V
8
6
4
2
※ Note : ID = 14 A
0
-1
10
0
0
10
1
10
0
5
10
15
20
25
30
35
40
45
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
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3
Figure 6. Gate Charge Characteristics
IRF644B — N-Channel BFET MOSFET
Typical Characteristics
(Continued)
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 7.0 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
15
Operation in This Area
is Limited by R DS(on)
2
10
ID, Drain Current [A]
1 ms
1
10
10 ms
DC
0
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0
1
10
9
6
3
-1
10
0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
10
75
100
125
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
ZθJC(t), Thermal Response [oC/W]
Zθ JC(t), Thermal Response
ID, Drain Current [A]
12
100 μs
Figure 10. Maximum Drain Current
vs Case Temperature
0
D = 0 .5
※ N o te s :
1 . Z θ J C (t) = 0 .9 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .2
10
0 .1
-1
0 .0 5
PDM
0 .0 2
0 .0 1
10
10
t1
s in g le p u ls e
-2
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
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4
10
1
150
IRF644B — N-Channel BFET MOSFET
Typical Characteristics
50KΩ
200nF
12V
IRF644B — N-Channel BFET MOSFET
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
Time
IRF644B — N-Channel BFET MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
VDD
IRF644B — N-Channel BFET MOSFET
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB
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