ISL9K860P3

ISL9K860P3 8A, 600V Stealth™ Dual Diode General Description Features The ISL9K860P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. • Soft Recovery. . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. • Fast Recovery . . . . . . . . . . . . . . . . . . . . trr < 25ns • Operating Temperature . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . 600V • Avalanche Energy Rated Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD Formerly developmental type TA49409. • Snubber Diode Package Symbol JEDEC TO-220AB K ANODE 2 CATHODE ANODE 1 CATHODE (FLANGE) A1 A2 Device Maximum Ratings (per leg) TC= 25°C unless otherwise noted Symbol VRRM VRWM Parameter Peak Repetitive Reverse Voltage Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current (TC = 147oC) Total Device Current (Both Legs) 8 16 A A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 16 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A Power Dissipation 85 W Avalanche Energy (1A, 40mH) 20 mJ -55 to 175 °C 300 260 °C °C VR PD EAVL TJ, TSTG TL TPKG Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2002 Fairchild Semiconductor Corporation ISL9K860P3 Rev. C ISL9K860P3 April 2002 ISL9K860P3 Package Marking and Ordering Information Device Marking K860P3 Device ISL9K860P3 Package TO-220AB Tape Width - Quantity - Electrical Characteristics (per leg) TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA Off State Characteristics IR Instantaneous Reverse Current VR = 600V On State Characteristics VF Instantaneous Forward Voltage IF = 8A TC = 25°C - 2.0 2.4 V TC = 125°C - 1.6 2.0 V VR = 10V, IF = 0A - 30 - pF ns Dynamic Characteristics CJ Junction Capacitance Switching Characteristics trr trr Reverse Recovery Time Reverse Recovery Time IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge dIM/dt IF = 1A, dIF/dt = 100A/µs, VR = 30V - 18 25 IF = 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns IF = 8A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C - 28 - ns - 3.2 - A - 50 - nC ns IF = 8A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C - 77 - - 3.7 - - 3.4 - A - 150 - nC IF = 8A, dIF/dt = 600A/µs, VR = 390V, TC = 125°C - 53 - ns - 2.5 - Maximum di/dt during tb - 6.5 - A 195 - nC 500 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 1.75 °C/W RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W ©2002 Fairchild Semiconductor Corporation ISL9K860P3 Rev. C ISL9K860P3 Typical Performance Curves 16 100 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 175oC 175oC 14 150oC 12 25oC 10 125oC 8 100oC 6 4 150oC 10 125oC 100oC 1 25oC 2 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 0.1 100 2.25 2.5 2.75 200 300 Figure 1. Forward Current vs Forward Voltage 600 90 VR = 390V, TJ = 125°C VR = 390V, TJ = 125°C 80 70 tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs tb AT IF = 16A, 8A, 4A 70 60 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 500 Figure 2. Reverse Current vs Reverse Voltage 80 50 40 30 20 10 2 4 6 8 10 12 50 40 30 20 ta AT IF = 16A, 8A, 4A 0 0 60 10 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 14 0 100 16 200 IF, FORWARD CURRENT (A) Figure 3. ta and tb Curves vs Forward Current 11 VR = 390V, TJ = 125°C dIF/dt = 800A/µs 10 9 8 dIF/dt = 500A/µs 7 6 5 dIF/dt = 200A/µs 4 3 2 0 2 4 6 8 10 12 IF, FORWARD CURRENT (A) 14 16 Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2002 Fairchild Semiconductor Corporation 300 400 500 600 900 700 800 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 1000 Figure 4. ta and tb Curves vs dIF/dt IRRM , MAX REVERSE RECOVERY CURRENT (A) IRRM , MAX REVERSE RECOVERY CURRENT (A) 400 VR , REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 14 VR = 390V, TJ = 125°C 12 IF = 16A 10 IF = 8A 8 IF = 4A 6 4 2 0 100 200 300 400 500 600 700 800 900 1000 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 6. Maximum Reverse Recovery Current vs dIF/dt ISL9K860P3 Rev. C ISL9K860P3 Typical Performance Curves (Continued) 350 S, REVERSE RECOVERY SOFTNESS FACTOR 6 QRR, REVERSE RECOVERY CHARGE (nC) VR = 390V, TJ = 125°C 5 4 IF = 16A IF = 8A 3 IF = 4A 2 1 100 200 300 400 500 600 700 800 900 VR = 390V, TJ = 125°C 300 IF = 16A 250 IF = 8A 200 150 IF = 4A 100 50 100 1000 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 500 600 700 800 900 1000 IF(AV), AVERAGE FORWARD CURRENT (A) 10 1000 800 600 400 200 0 0.1 1 10 100 VR , REVERSE VOLTAGE (V) Figure 9. Junction Capacitance vs Reverse Voltage 1.0 THERMAL IMPEDANCE 400 Figure 8. Reverse Recovery Charge vs dIF/dt 1200 CJ , JUNCTION CAPACITANCE (pF) 300 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Softness Factor vs dIF/dt ZθJA, NORMALIZED 200 8 6 4 2 0 140 145 150 155 160 165 170 175 TC, CASE TEMPERATURE (oC) Figure 10. DC Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance ©2002 Fairchild Semiconductor Corporation ISL9K860P3 Rev. C ISL9K860P3 l.l Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG VGE CURRENT SENSE trr dt ta tb 0 + VDD - MOSFET t1 dIF 0.25 IRM IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VAVL R + IL VDD DUT t0 Figure 14. Avalanche Energy Test Circuit ©2002 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms ISL9K860P3 Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST â FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC â OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench â QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER â UHC™ SMART START™ UltraFET â SPM™ VCX™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5