ISL9R860S3ST

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This literature is subject to all applicable copyright laws and is not for resale in any manner. ISL9R860P2, ISL9R860S3ST 8 A, 600 V, STEALTH™ Diode Features • Stealth Recovery trr = 28 ns (@ IF = 8 A) • Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) • 600 V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS Compliant Applications • SMPS FWD • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode Description The ISL9R860P2, ISL9R860S3ST is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. • Motor Drive FWD • Snubber Diode Package Symbol JEDEC TO-220AC-2L CATHODE (FLANGE) JEDEC TO-263AB(D2-PAK) K CATHODE (FLANGE) ANODE CATHODE N/C A ANODE Device Maximum Ratings TC= 25°C unless otherwise noted Symbol VRRM VRWM VR Ratings 600 Unit V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V 8 A Parameter Peak Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current (TC = 147oC) IFRM Repetitive Peak Surge Current (20kHz Square Wave) 16 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A PD EAVL TJ, TSTG TL TPKG Power Dissipation 85 W Avalanche Energy (1 A, 40 mH) Operating and Storage Temperature Range 20 mJ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 -55 to 175 °C 300 260 °C °C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. 2 1 www.fairchildsemi.com ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode August 2018 Part Number Top Mark ISL9R860P2 ISL9R860S3ST Packing Method Reel Size Tape Width Quantity Package R860P2 TO-220AC-2L Tube N/A N/A 50 R860S3S TO-263AB(D2-PAK) Reel 13" Dia 24mm 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Unit Off State Characteristics IR Instantaneous Reverse Current TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA TC = 25°C - 2.0 2.4 V TC = 125°C - 1.6 2.0 V VR = 10 V, IF = 0 A - 30 - pF IF = 1 A, diF/dt = 100 A/µs, VR = 30 V - 18 25 ns IF = 8 A, diF/dt = 100 A/µs, VR = 30 V IF = 8 A, diF/dt = 200 A/µs, VR = 390 V, TC = 25°C - 21 30 ns - 28 - ns - 3.2 - A - 50 - nC - 77 - ns - 3.7 - - 3.4 - A - 150 - nC - 53 - ns - 2.5 - VR = 600 V On State Characteristics VF Instantaneous Forward Voltage IF = 8 A Dynamic Characteristics CJ Junction Capacitance Switching Characteristics trr Reverse Recovery Time trr Irr Reverse Recovery Current Qrr Reverse Recovery Charge trr S Softness Factor (tb/ta) Reverse Recovery Time Reverse Recovery Time Irr Reverse Recovery Current Qrr Reverse Recovery Charge trr S Softness Factor (tb/ta) Irr Reverse Recovery Current Qrr Reverse Recovery Charge dIM/dt Reverse Recovery Time IF = 8 A, diF/dt = 200 A/µs, VR = 390 V, TC = 125°C IF = 8 A, diF/dt = 600 A/µs, VR = 390 V, TC = 125°C Maximum di/dt during tb - 6.5 - A 195 - nC 500 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 1.75 °C/W RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W RθJA Thermal Resistance Junction to Ambient TO-263 62 °C/W ©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. 2 2 www.fairchildsemi.com ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode Package Marking and Ordering Information 16 100 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 175oC 175oC 14 150oC 12 25oC 10 125oC 8 100oC 6 4 150oC 10 125oC 100oC 1 25oC 2 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 0.1 100 2.25 2.5 2.75 2 200 300 Figure 1. Forward Current vs Forward Voltage 600 90 VR = 390V, TJ = 125°C VR = 390V, TJ = 125°C 80 70 tb AT diF/dt = 200A/µs, 500A/µs, 800A/µs tb AT IF = 16A, 8A, 4A 70 60 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 500 Figure 2. Reverse Current vs Reverse Voltage 80 50 40 30 20 10 2 4 6 8 10 12 50 40 30 20 ta AT IF = 16A, 8A, 4A 0 0 60 10 ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs 14 0 100 16 200 IF, FORWARD CURRENT (A) 300 400 500 600 900 700 800 diF/dt, CURRENT RATE OF CHANGE (A/µs) 1000 Figure 4. ta and tb Curves vs diF/dt Figure 3. ta and tb Curves vs Forward Current 14 11 VR = 390V, TJ = 125°C diF/dt = 800A/µs Irr, MAX REVERSE RECOVERY CURRENT (A) Irr, MAX REVERSE RECOVERY CURRENT (A) 400 VR , REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 10 9 8 diF/dt = 500A/µs 7 6 5 diF/dt = 200A/µs 4 3 2 0 2 4 6 8 10 12 IF, FORWARD CURRENT (A) 14 16 IF = 16A 10 IF = 8A 8 IF = 4A 6 4 2 0 100 200 300 400 500 600 700 800 900 1000 diF/dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. 2 VR = 390V, TJ = 125°C 12 Figure 6. Maximum Reverse Recovery Current vs diF/dt 3 www.fairchildsemi.com ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode Typical Performance Curves 350 S, REVERSE RECOVERY SOFTNESS FACTOR 6 QRR, REVERSE RECOVERY CHARGE (nC) VR = 390V, TJ = 125°C 5 4 IF = 16A IF = 8A 3 IF = 4A 2 1 100 200 300 400 500 600 700 800 900 VR = 390V, TJ = 125°C 300 IF = 16A 250 IF = 8A 200 150 IF = 4A 100 50 100 1000 diF/dt, CURRENT RATE OF CHANGE (A/µs) 500 600 700 800 900 1000 IF(AV), AVERAGE FORWARD CURRENT (A) 10 1000 800 600 400 200 0 0.1 1 10 100 Figure 9. Junction Capacitance vs Reverse Voltage 1.0 8 6 4 2 0 140 145 150 155 160 165 170 175 TC, CASE TEMPERATURE (oC) VR , REVERSE VOLTAGE (V) THERMAL IMPEDANCE 400 Figure 8. Reverse Recovery Charge vs diF/dt 1200 CJ , JUNCTION CAPACITANCE (pF) 300 diF/dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Softness Factor vs diF/dt ZθJA, NORMALIZED 200 Figure 10. DC Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance ©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. 2 4 www.fairchildsemi.com ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL diF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE diF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VAVL R + IL VDD DUT t0 Figure 14. Avalanche Energy Test Circuit ©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. 2 IL I V ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode Test Circuits and Waveforms t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms 5 www.fairchildsemi.com ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode Mechanical Dimensions Figure 16. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0B2. ©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. 2 6 www.fairchildsemi.com ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode Package Dimensions Figure 17. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002. ©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. 2 7 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2001 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S3ST Rev. 2 8 www.fairchildsemi.com ISL9R860P2, ISL9R860S3ST — STEALTH™ Diode TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Sync-Lock™ F-PFS™ AccuPower™ ® FRFET® AX-CAP®* ®* ® BitSiC™ Global Power ResourceSM PowerTrench GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Green FPS™ Programmable Active Droop™ CorePLUS™ TinyBuck® ® Green FPS™ e-Series™ QFET CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ EcoSPARK® Saving our world, 1mW/W/kW at a time™ and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® ® STEALTH™ MillerDrive™ Fairchild Semiconductor UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ ® SuperSOT™-3 mWSaver FACT UniFET™ SuperSOT™-6 OptoHiT™ FAST® ® VCX™ SuperSOT™-8 OPTOLOGIC FastvCore™ ® ® VisualMax™ OPTOPLANAR SupreMOS FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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