ISL9V2040D3STV

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 EcoSPARKŠ 200mJ, 400V, N-Channel Ignition IGBT General Description Applications The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263) and TO-220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components. • Automotive Ignition Coil Driver Circuits • Coil- On Plug Applications EcoSPARKŠ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information. Features • Space saving D - Pak package available • SCIS Energy = 200mJ at TJ = 25oC • Logic Level Gate Drive Formerly Developmental Type 49444 Package Symbol COLLECTOR JEDEC TO-252AA D-Pak JEDEC TO-263AB D²-Pak JEDEC TO-220AB E C G R1 GATE G G E R2 E COLLECTOR (FLANGE) EMITTER COLLECTOR (FLANGE) Device Maximum Ratings TA = 25°C unless otherwise noted Symbol BVCER Parameter Collector to Emitter Breakdown Voltage (IC = 1 mA) Ratings 430 Units V BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V ESCIS25 At Starting TJ = 25°C, ISCIS = 11.5A, L = 3.0mHy 200 mJ ESCIS150 At Starting TJ = 150°C, ISCIS = 8.9A, L = 3.0mHy 120 mJ IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 10 A IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 10 A VGEM Gate to Emitter Voltage Continuous ±10 V PD Power Dissipation Total TC = 25°C 130 W Power Dissipation Derating TC > 25°C 0.87 W/°C Operating Junction Temperature Range -40 to 175 °C Storage Junction Temperature Range -40 to 175 °C Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4 kV TJ TSTG TL ©2004 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, October 20 ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 October 20 Device Marking V2040D Device ISL9V2040D3ST Package TO-252AA Reel Size 330mm Tape Width 16mm Quantity 2500 800 V2040S ISL9V2040S3ST TO-263AB 330mm 24mm V2040P ISL9V2040P3 TO-220AB Tube N/A 50 V2040D ISL9V2040D3S TO-252AA Tube N/A 75 V2040S ISL9V2040S3S TO-263AB Tube N/A 50 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER Collector to Emitter Breakdown Voltage IC = 2mA, VGE = 0, RG = 1KΩ, See Fig. 15 TJ = -40 to 150°C 370 400 430 V BVCES Collector to Emitter Breakdown Voltage IC = 10mA, VGE = 0, RG = 0, See Fig. 15 TJ = -40 to 150°C 390 420 450 V BVECS Emitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V, TC = 25°C 30 - - V BVGES Gate to Emitter Breakdown Voltage IGES = ± 2mA Collector to Emitter Leakage Current VCER = 250V, RG = 1KΩ, See Fig. 11 ICER IECS Emitter to Collector Leakage Current R1 Series Gate Resistance R2 Gate to Emitter Resistance ±12 ±14 - V TC = 25°C - - 25 µA TC = 150°C - - 1 mA VEC = 24V, See TC = 25°C Fig. 11 TC = 150°C - - 1 mA - - 40 mA - 70 - Ω 10K - 26K Ω On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 6A, VGE = 4V TC = 25°C, See Fig. 3 - 1.45 1.9 V VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A, VGE = 4.5V TC = 150°C See Fig. 4 - 1.95 2.3 V - 12 - nC Dynamic Characteristics QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 VGEP Gate to Emitter Plateau Voltage TC = 25°C 1.3 - 2.2 V TC = 150°C 0.75 - 1.8 V - 3.4 - V IC = 10A, VCE = 12V Switching Characteristics td(ON)R triseR td(OFF)L tfL SCIS Current Turn-On Delay Time-Resistive Current Rise Time-Resistive Current Turn-Off Delay Time-Inductive Current Fall Time-Inductive Self Clamped Inductive Switching VCE = 14V, RL = 1Ω, VGE = 5V, RG = 1KΩ TJ = 25°C - 0.61 - µs - 2.17 - µs VCE = 300V, L = 500µHy, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 - 3.64 - µs - 2.36 - µs TJ = 25°C, L = 3.0mHy, RG = 1KΩ, VGE = 5V, See Fig. 1 & 2 - - 200 mJ TO-252, TO-263, TO-220 - - 1.15 °C/W Thermal Characteristics RθJC Thermal Resistance Junction-Case ©2004 Fairchild Semiconductor Corporation ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, October 20 ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Package Marking and Ordering Information 20 ISCIS, INDUCTIVE SWITCHING CURRENT (A) ISCIS, INDUCTIVE SWITCHING CURRENT (A) 20 RG = 1KΩ, VGE = 5V,Vdd = 14V 18 16 14 TJ = 25°C 12 10 TJ = 150°C 8 6 4 2 SCIS Curves valid for Vclamp Voltages of