MBR30H100CTG

Switch‐mode Power Rectifier 100 V, 30 A MBR30H100CTG, MBRF30H100CTG www.onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES 100 VOLTS Low Forward Voltage: 0.67 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) These are Pb−Free Devices 1 2, 4 Applications 3 • Power Supply − Output Rectification • Power Management • Instrumentation MARKING DIAGRAMS 4 Mechanical Characteristics: • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C TO−220 CASE 221A STYLE 6 1 2 3 TO−220 FULLPAK CASE 221D 1 2 AYWW B30H100G AKA AYWW B30H100G AKA 3 A Y WW B30H100 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2016 July, 2020 − Rev. 7 1 Publication Order Number: MBR30H100CT/D MBR30H100CTG, MBRF30H100CTG MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current Per Diode (TC = 156°C) Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151°C) IFM 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 250 A Operating Junction Temperature (Note 1) TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 200 mJ > 400 > 8000 V Rating Controlled Avalanche Energy (see test conditions in Figures 13 and 14) A 15 30 ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value RqJC RqJA RqJC RqJA 2.0 60 4.2 75 Maximum Thermal Resistance (MBR30H100CTG) − Junction-to-Case − Junction-to-Ambient (MBRF30H100CTG) − Junction-to-Case − Junction-to-Ambient Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 15 A, TJ = 25°C) (iF = 15 A, TJ = 125°C) (iF = 30 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) iR Min Typ Max − − − − 0.76 0.64 0.88 0.76 0.80 0.67 0.93 0.80 − − 1.1 0.0008 6.0 0.0045 Unit V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Package Type Shipping† MBR30H100CTG TO−220 (Pb−Free) 50 Units / Rail MBRF30H100CTG TO−220FP (Pb−Free) 50 Units / Rail Device Order Number www.onsemi.com 2 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F i , INSTANTANEOUS FORWARD CURRENT (AMPS) F MBR30H100CTG, MBRF30H100CTG 100 175°C 10 TJ = 150°C 1.0 125°C 25°C 0.1 0.0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 100 175°C 10 TJ = 150°C 1.0 125°C 0.1 0.0 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) IR, MAXIMUM REVERSE CURRENT (AMPS) TJ = 150°C 1E−03 1E−03 TJ = 125°C 1E−04 0.7 0.8 0.9 1.0 1.1 TJ = 125°C 1E−04 1E−05 1E−05 1E−06 TJ = 25°C 1E−06 TJ = 25°C 1E−07 1E−07 20 60 40 80 100 1E−08 0 40 60 80 Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current , AVERAGE FORWARD CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS) dc SQUARE WAVE 135 20 VR, REVERSE VOLTAGE (VOLTS) F (AV) , AVERAGE FORWARD CURRENT (AMPS) 0.6 TJ = 150°C 1E−02 140 145 150 155 160 165 170 175 I IR, REVERSE CURRENT (AMPS) 1E−02 F (AV) 0.5 1E−01 1E−08 0 I 0.4 Figure 2. Maximum Forward Voltage 1E−01 4.0 2.0 0 130 0.3 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 26 24 22 20 18 16 14 12 10 8.0 6.0 25°C 0.2 0.1 180 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 RATED VOLTAGE APPLIED RqJA = 16° C/W RqJA = 60° C/W (NO HEATSINK) dc SQUARE WAVE dc 0 TC, CASE TEMPERATURE (C°) 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg www.onsemi.com 3 100 175 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10000 TJ = 25°C TJ = 175°C SQUARE WAVE C, CAPACITANCE (pF) P , AVERAGE FORWARD POWER DISSIPATION (WATTS) F (AV) MBR30H100CTG, MBRF30H100CTG dc 1000 100 10 0 4 2 6 8 10 12 14 16 18 20 22 24 26 28 30 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 80 60 100 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Forward Power Dissipation R(t), TRANSIENT THERMAL RESISTANCE 40 20 Figure 8. Capacitance 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 DUTY CYCLE, D = t1/t2 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response Junction−to−Ambient for MBR30H100CT 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 10. Thermal Response Junction−to−Case for MBR30H100CT www.onsemi.com 4 100 1000 R(t), TRANSIENT THERMAL RESISTANCE MBR30H100CTG, MBRF30H100CTG 10 D = 0.5 1.0 0.1 0.2 0.1 0.05 0.02 P(pk) 0.01 0.01 t1 SINGLE PULSE 0.001 0.000001 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.1 0.01 1.0 ZqJC(t) = r(t) RqJC RqJC = 1.6°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 11. Thermal Response Junction−to−Case for MBRF30H100CT 100 10 D = 0.5 0.2 0.1 0.05 0.02 1.0 0.01 P(pk) 0.1 0.01 0.001 0.000001 t1 SINGLE PULSE 0.00001 t2 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 0.1 1.0 ZqJC(t) = r(t) RqJC RqJC = 1.6°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 10 t1, TIME (sec) Figure 12. Thermal Response Junction−to−Ambient for MBRF30H100CT www.onsemi.com 5 100 1000 MBR30H100CTG, MBRF30H100CTG +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH ID ID IL DUT S1 VDD t0 Figure 13. Test Circuit t1 t2 t Figure 14. Current−Voltage Waveforms The unclamped inductive switching circuit shown in Figure 13 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 V BV DUT DD Ǔ EQUATION (2): 2 W [ 1 LI LPK AVAL 2 FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F C S Q SCALE 1:1 SEATING PLANE U 1 2 3 −Y− K G N L D STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 4: PIN 1. CATHODE 2. ANODE 3. CATHODE STYLE 5: PIN 1. CATHODE 2. ANODE 3. GATE J R 3 PL 0.25 (0.010) M B M Y DESCRIPTION: INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 MARKING DIAGRAMS STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. MT 1 2. MT 2 3. GATE xxxxxx G A Y WW DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U A H DATE 27 FEB 2009 98ASB42514B TO−220 FULLPAK xxxxxxG AYWW AYWW xxxxxxG AKA Bipolar Rectifier = Specific Device Code = Pb−Free Package = Assembly Location = Year = Work Week A Y WW xxxxxx G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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