MBRM120LT3G

MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G Schottky Power Rectifier, Surface Mount, 1.0 A, 20 V The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the POWERMITE has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles,  1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC −DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS ANODE CATHODE POWERMITE CASE 457 PLASTIC MARKING DIAGRAM Features          Low Profile − Maximum Height of 1.1 mm Small Footprint − Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink ESD Ratings:  Human Body Model = 3B (> 16 kV)  Machine Model = C (> 400 V) AEC−Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* Mechanical Characteristics:      POWERMITE is JEDEC Registered as D0−216AA Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 16.3 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Maximum for 10 Seconds 1 M BCFG 2 M = Date Code BCF = Device Code G = Pb−Free Package ORDERING INFORMATION Package Shipping† MBRM120LT1G POWERMITE (Pb−Free) 3,000 / Tape & Reel NRVBM120LT1G POWERMITE (Pb−Free) 3,000 / Tape & Reel MBRM120LT3G POWERMITE (Pb−Free) 12,000 / Tape & Reel NRVBM120LT3G POWERMITE (Pb−Free) 12,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 7 1 Publication Order Number: MBRM120L/D MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol Value Unit VRRM VRWM VR 20 V Average Rectified Forward Current (At Rated VR, TC = 135C) IO A 1.0 Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 135C) IFRM Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM Storage Temperature Tstg −55 to 150 C Operating Junction Temperature TJ −55 to 125 C Voltage Rate of Change (Rated VR, TJ = 25C) A 2.0 A 50 dv/dt V/ms 10,000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Anode) (Note 1) Thermal Resistance, Junction−to−Tab (Cathode) (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Value Unit Rtjl Rtjtab Rtja 35 23 277 C/W 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value VF Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 TJ = 25C TJ = 85C 0.34 0.45 0.65 0.26 0.415 0.67 TJ = 25C TJ = 85C 0.40 0.10 25 18 (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 2), See Figure 4 Unit (VR = 20 V) (VR = 10 V) V mA IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2%. 10 TJ = 125C TJ = 85C 1.0 TJ = 25C TJ = −40C 0.1 0.1 0.3 0.5 0.7 0.9 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 125C 1.0 TJ = 85C TJ = 25C 0.1 0.1 0.3 0.5 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 0.9 MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G IR, REVERSE CURRENT (AMPS) 1.0E−3 TJ = 85C 100E−6 10E−6 1.0E−6 10E−3 TJ = 85C 1.0E−3 100E−6 TJ = 25C 5.0 10 15 VR, REVERSE VOLTAGE (VOLTS) 0 IR, MAXIMUM REVERSE CURRENT (AMPS) 100E−3 10E−3 20 TJ = 25C 10E−6 0 5.0 10 15 VR, REVERSE VOLTAGE (VOLTS) FREQ = 20 kHz dc 1.4 1.2 SQUARE WAVE 1.0 Ipk/Io = p 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 25 35 45 55 65 75 85 95 105 TL, LEAD TEMPERATURE (C) 115 125 Figure 5. Current Derating C, CAPACITANCE (pF) 1000 TJ = 25C 100 10 0 2.0 4.0 6.0 8.0 10 12 14 16 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance 18 20 PFO, AVERAGE POWER DISSIPATION (WATTS) 1.8 1.6 Figure 4. Maximum Reverse Current TJ, DERATED OPERATING TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Reverse Current 20 0.7 0.6 Ipk/Io = 5 0.5 Ipk/Io = p SQUARE WAVE dc Ipk/Io = 10 0.4 Ipk/Io = 20 0.3 0.2 0.1 0 0 0.4 0.8 1.2 1.0 0.2 0.6 1.4 IO, AVERAGE FORWARD CURRENT (AMPS) 1.6 Figure 6. Forward Power Dissipation 125 115 105 Rtja = 33.72C/W 95 119C/W 85 204C/W 75 65 0 2.0 4.0 277.35C/W 6.0 8.0 10 338C/W 12 14 16 18 20 VR, DC REVERSE VOLTAGE (VOLTS) Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax − r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 3 R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% 1.0% 0.001 0.00001 Rtjl(t) = Rtjl*r(t) 0.0001 0.001 0.01 0.1 1.0 10 100 T, TIME (s) Figure 9. Thermal Response Junction to Lead 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% Rtjl(t) = Rtjl*r(t) 1.0% 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 T, TIME (s) Figure 10. Thermal Response Junction to Ambient POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. http://onsemi.com 4 10 100 1,000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS POWERMITE CASE 457 ISSUE G DATE 12 JAN 2022 SCALE 4:1 GENERIC MARKING DIAGRAMS* 1 M XXXG 2 1 STYLE 1 1 M XXXG 2 STYLE 2 M XXXG 2 XXX = Specific Device Code M = Date Code G = Pb−Free Package STYLE 3 DOCUMENT NUMBER: DESCRIPTION: STYLE 1: PIN 1. CATHODE 2. ANODE 98ASB14853C POWERMITE STYLE 2: PIN 1. ANODE OR CATHODE 2. CATHODE OR ANODE (BI−DIRECTIONAL) STYLE 3: PIN 1. ANODE 2. CATHODE *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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