MC74LVX132
Quad 2-Input NAND
Schmitt Trigger
The MC74LVX132 is an advanced high speed CMOS Schmitt
NAND trigger fabricated with silicon gate CMOS technology.
Pin configuration and function are the same as the MC74LVX00,
but the inputs have hysteresis.
The internal circuit is composed of multiple stages, including
a buffer output which provides high noise immunity and stable output.
The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V
systems to 3.0 V systems.
Features
•
•
•
•
•
•
•
•
High Speed: tPD = 5.8 ns (Typ) at VCC = 3.3 V
Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C
Power Down Protection Provided on Inputs
Low Noise: VOLP = 0.5 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance:
Human Body Model > 2000 V;
Machine Model > 200 V
These Devices are Pb−Free and are RoHS Compliant
3
Y1
TSSOP−14
DT SUFFIX
CASE 948G
PIN ASSIGNMENT
VCC
14
B4
13
A4
12
Y4
11
B3
10
A3
9
Y3
8
1
2
3
4
5
6
7
A1
B1
Y1
A2
B2
Y2
GND
MARKING DIAGRAMS
2
B1
SOIC−14 NB
D SUFFIX
CASE 751A
14−Lead (Top View)
1
A1
http://onsemi.com
14
4
A2
LVX132G
AWLYWW
6
Y2
5
B2
1
SOIC−14 NB
9
A3
14
8
LVX
132
ALYWG
G
Y3
10
B3
1
12
A4
TSSOP−14
11
Y4
LVX132
A
WL, L
Y
WW, W
G or G
13
B4
Figure 1. Logic Diagram
FUNCTION TABLE
A Input
B Input
Y Output
L
L
H
H
L
H
L
H
H
H
H
L
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 4
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
Publication Order Number:
MC74LVX132/D
MC74LVX132
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
−0.5 to )7.0
V
VIN
DC Input Voltage
−0.5 to )7.0
V
−0.5 to VCC )0.5
V
VI < GND
−20
mA
VO < GND
±20
mA
VOUT
DC Output Voltage
IIK
DC Input Diode Current
IOK
DC Output Diode Current
IOUT
DC Output Sink Current
±25
mA
ICC
DC Supply Current per Supply Pin
±50
mA
−65 to )150
_C
260
_C
TSTG
Storage Temperature Range
TL
Lead Temperature, 1 mm from Case for 10 Seconds
TJ
Junction Temperature under Bias
)150
_C
qJA
Thermal Resistance
SOIC
TSSOP
250
_C/W
PD
Power Dissipation in Still Air at 85_C
SOIC
TSSOP
250
mW
MSL
Moisture Sensitivity
FR
Flammability Rating
VESD
ILatchup
Level 1
Oxygen Index: 30% − 35%
ESD Withstand Voltage
UL 94−V0 @ 0.125 in
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
Latchup Performance
Above VCC and Below GND at 85_C (Note 4)
> 2000
> 200
N/A
V
±300
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Min
Max
Unit
2.0
3.6
V
(Note 5)
0
5.5
V
(HIGH or LOW State)
0
5.5
V
*40
)125
_C
0
100
ns/V
Supply Voltage
VI
Input Voltage
VO
Output Voltage
TA
Operating Free−Air Temperature
Dt/DV
Input Transition Rise or Fall Rate
VCC = 3.0 V $0.3 V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. Unused inputs may not be left open. All inputs must be tied to a high− or low−logic input voltage level.
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2
MC74LVX132
DC ELECTRICAL CHARACTERISTICS
VCC
V
TA = ≤ 85°C
TA = 25°C
TA = ≤ 125°C
Min
Typ
Max
Min
Max
Min
Max
Unit
VT+
Positive Threshold Voltage
(Figure 4)
2.0
3.0
3.6
1.15
1.50
1.70
1.31
1.82
2.12
1.60
2.25
2.60
1.15
1.50
1.70
1.60
2.25
2.60
1.15
1.50
1.70
1.60
2.25
2.60
V
VT−
Negative Threshold Voltage
(Figure 4)
2.0
3.0
3.6
0.30
0.75
1.00
0.64
1.13
1.46
0.9
1.45
1.90
0.30
0.75
1.00
0.90
1.45
1.90
0.30
0.75
1.00
0.90
1.45
1.90
V
VH
Hysteresis Voltage
(Figure 4)
2.0
3.0
3.6
0.30
0.30
0.35
0.70
0.76
0.69
1.30
1.50
1.60
0.30
0.30
0.35
1.30
1.50
1.60
0.30
0.30
0.35
1.30
1.50
1.60
V
1.9
2.9
2.58
2.0
3.0
Symbol
Parameter
Test Conditions
VOH
Minimum High−Level Output
Voltage
VIN = VIH or VIL
IOH = − 50 mA
IOH = − 50 mA
IOH = − 4 mA
2.0
3.0
3.0
VOL
Maximum Low−Level Output
Voltage
VIN = VIH or VIL
IOL = 50 mA
IOL = 50 mA
IOL = 4 mA
2.0
3.0
3.0
Iin
Maximum Input Leakage
Current
Vin = 5.5 V or
GND
ICC
Maximum Quiescent Supply
Current
Vin = VCC or GND
1.9
2.9
2.48
0.0
0.0
1.9
2.9
2.34
V
0.1
0.1
0.36
0.1
0.1
0.44
0.1
0.1
0.52
V
3.6
±0.1
±1.0
±1.0
mA
3.6
2.0
20
20
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
Symbol
tPLH,
tPHL
tOSHL,
tOSLH
Cin
Parameter
Min
Test Conditions
TA = ≤ 85°C
TA = ≤ 125°C
Typ
Max
Min
Max
Min
Max
Unit
ns
Maximum Propagation
Delay,
A or B to Y
VCC = 2.7V
CL = 15pF
CL = 50pF
7.0
10.0
11.0
16.0
1.0
1.0
13.0
18.7
1.0
1.0
15.0
20.0
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
5.8
8.3
10.6
15.4
1.0
1.0
12.5
17.5
1.0
1.0
14.5
19.5
Output to Output Skew
(Note 6)
VCC = 2.7V
CL = 50pF
1.5
1.5
1.5
VCC = 3.3 ± 0.3V
CL = 50pF
1.5
1.5
1.5
10
10
10
Maximum Input
Capacitance
4
ns
pF
Typical @ 25°C, VCC = 5.0 V
CPD
11
Power Dissipation Capacitance (Note 6)
pF
6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the
no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0 V)
TA = 25°C
Symbol
Characteristic
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.5
V
VOLV
Quiet Output Minimum Dynamic VOL
−0.3
−0.5
V
VIHD
Minimum High Level Dynamic Input Voltage
2.0
V
VILD
Maximum Low Level Dynamic Input Voltage
0.8
V
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3
MC74LVX132
VCC
A
50%
GND
tPLH
Y
tPHL
50% VCC
Figure 2. Switching Waveforms
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
VT , TYPICAL INPUT THRESHOLD VOLTAGE (VOLTS)
Figure 3. Test Circuit
4
3
(VT+)
2
VHtyp
(VT-)
1
2
2.5
3
3.5
VCC, POWER SUPPLY VOLTAGE (VOLTS)
VHtyp = (VT+ typ) - (VT- typ)
4
Figure 4. Typical Input Threshold, VT+, VT− versus Power Supply Voltage
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4
MC74LVX132
VCC
VH
VT+
VT-
Vin
VCC
VH
VT+
VT-
Vin
GND
GND
VOH
VOH
Vout
Vout
VOL
VOL
(a) A Schmitt-Trigger Squares Up Inputs With Slow Rise and Fall Times
(b) A Schmitt-Trigger Offers Maximum Noise Immunity
Figure 5. Typical Schmitt−Trigger Applications
INPUT
Figure 6. Input Equivalent Circuit
ORDERING INFORMATION
Package
Shipping†
SOIC−14 NB
(Pb−Free)
2500 Tape & Reel
MC74LVX132DTG
TSSOP−14
(Pb−Free)
96 Units / Rail
MC74LVX132DTR2G
TSSOP−14
(Pb−Free)
2500 Tape & Reel
Device
MC74LVX132DR2G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE L
14
1
SCALE 1:1
D
DATE 03 FEB 2016
A
B
14
8
A3
E
H
L
1
0.25
B
M
DETAIL A
7
13X
M
b
0.25
M
C A
S
B
S
0.10
X 45 _
M
A1
e
DETAIL A
h
A
C
SEATING
PLANE
DIM
A
A1
A3
b
D
E
e
H
h
L
M
MILLIMETERS
MIN
MAX
1.35
1.75
0.10
0.25
0.19
0.25
0.35
0.49
8.55
8.75
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.40
1.25
0_
7_
INCHES
MIN
MAX
0.054 0.068
0.004 0.010
0.008 0.010
0.014 0.019
0.337 0.344
0.150 0.157
0.050 BSC
0.228 0.244
0.010 0.019
0.016 0.049
0_
7_
GENERIC
MARKING DIAGRAM*
SOLDERING FOOTPRINT*
6.50
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
14
14X
1.18
XXXXXXXXXG
AWLYWW
1
1
1.27
PITCH
XXXXX
A
WL
Y
WW
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
14X
0.58
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SOIC−14
CASE 751A−03
ISSUE L
DATE 03 FEB 2016
STYLE 1:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. NO CONNECTION
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. NO CONNECTION
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 2:
CANCELLED
STYLE 3:
PIN 1. NO CONNECTION
2. ANODE
3. ANODE
4. NO CONNECTION
5. ANODE
6. NO CONNECTION
7. ANODE
8. ANODE
9. ANODE
10. NO CONNECTION
11. ANODE
12. ANODE
13. NO CONNECTION
14. COMMON CATHODE
STYLE 4:
PIN 1. NO CONNECTION
2. CATHODE
3. CATHODE
4. NO CONNECTION
5. CATHODE
6. NO CONNECTION
7. CATHODE
8. CATHODE
9. CATHODE
10. NO CONNECTION
11. CATHODE
12. CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 5:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. NO CONNECTION
7. COMMON ANODE
8. COMMON CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. ANODE/CATHODE
12. ANODE/CATHODE
13. NO CONNECTION
14. COMMON ANODE
STYLE 6:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
7. CATHODE
8. ANODE
9. ANODE
10. ANODE
11. ANODE
12. ANODE
13. ANODE
14. ANODE
STYLE 7:
PIN 1. ANODE/CATHODE
2. COMMON ANODE
3. COMMON CATHODE
4. ANODE/CATHODE
5. ANODE/CATHODE
6. ANODE/CATHODE
7. ANODE/CATHODE
8. ANODE/CATHODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. COMMON CATHODE
12. COMMON ANODE
13. ANODE/CATHODE
14. ANODE/CATHODE
STYLE 8:
PIN 1. COMMON CATHODE
2. ANODE/CATHODE
3. ANODE/CATHODE
4. NO CONNECTION
5. ANODE/CATHODE
6. ANODE/CATHODE
7. COMMON ANODE
8. COMMON ANODE
9. ANODE/CATHODE
10. ANODE/CATHODE
11. NO CONNECTION
12. ANODE/CATHODE
13. ANODE/CATHODE
14. COMMON CATHODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42565B
SOIC−14 NB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TSSOP−14 WB
CASE 948G
ISSUE C
14
DATE 17 FEB 2016
1
SCALE 2:1
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
−U−
L
PIN 1
IDENT.
N
F
7
1
0.15 (0.006) T U
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL
IN EXCESS OF THE K DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
S
DETAIL E
K
A
−V−
K1
J J1
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
SECTION N−N
−W−
C
0.10 (0.004)
−T− SEATING
PLANE
H
G
D
DETAIL E
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
INCHES
MIN
MAX
MIN MAX
4.90
5.10 0.193 0.200
4.30
4.50 0.169 0.177
−−−
1.20
−−− 0.047
0.05
0.15 0.002 0.006
0.50
0.75 0.020 0.030
0.65 BSC
0.026 BSC
0.50
0.60 0.020 0.024
0.09
0.20 0.004 0.008
0.09
0.16 0.004 0.006
0.19
0.30 0.007 0.012
0.19
0.25 0.007 0.010
6.40 BSC
0.252 BSC
0_
8_
0_
8_
GENERIC
MARKING DIAGRAM*
14
SOLDERING FOOTPRINT
XXXX
XXXX
ALYWG
G
7.06
1
1
0.65
PITCH
14X
0.36
14X
1.26
DIMENSIONS: MILLIMETERS
DOCUMENT NUMBER:
98ASH70246A
DESCRIPTION:
TSSOP−14 WB
A
L
Y
W
G
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
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