MCH3475-TL-E

MCH3475 Power MOSFET 30V, 180mΩ, 1.8A, Single N-Channel Features www.onsemi.com VDSS • High Speed Switching • 4V Drive • Pb-Free and RoHS Compliance • Halogen Free Compliance : MCH3475-TL-W RDS(on) Max 180mΩ@ 10V 30V N-Channel Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Unit Value VDSS 30 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 1.8 A IDP 7.2 A PD 0.8 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% 1.8A 330mΩ@ 4V Electrical Connection Specifications Drain to Source Voltage ID Max 3 1 1 : Gate 2 : Source 3 : Drain Power Dissipation When mounted on ceramic substrate 2 (900mm2 × 0.8mm) This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Packing Type : TL Symbol Value Unit Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) FG LOT No. Parameter LOT No. Thermal Resistance Ratings Marking TL RθJA 156.2 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 3 1 Publication Order Number : MCH3475/D MCH3475 Electrical Characteristics at Ta = 25°C Parameter Symbol Conditions Value min Drain to Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V Gate to Source Leakage Current IGSS VGS=±16V, VDS=0V Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 1.2 Forward Transconductance gFS VDS=10V, ID=0.9A 0.66 RDS(on)1 ID=0.9A, VGS=10V RDS(on)2 ID=0.5A, VGS=4V Static Drain to Source On-State Resistance typ Unit max 30 V 1 μA ±10 μA 2.6 V 135 180 mΩ 230 330 mΩ 1.1 S Input Capacitance Ciss Output Capacitance Coss 19 pF Reverse Transfer Capacitance Crss 11 pF Turn-ON Delay Time td(on) 3.4 ns Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD 88 VDS=10V, f=1MHz See specified Test Circuit VDS=10V, VGS=10V, ID=1.8A IS=1.8A, VGS=0V pF 3.6 ns 10.5 ns 4.0 ns 2.0 nC 0.33 nC 0.29 nC 0.86 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD=15V VIN 10V 0V ID=0.9A RL=16.7Ω VOUT VIN D PW=10μs D.C.≤1% G P.G 50Ω S MCH3475 www.onsemi.com 2 MCH3475 www.onsemi.com 3 MCH3475 www.onsemi.com 4 MCH3475 Package Dimensions MCH3475-TL-E / MCH3475-TL-W MCPH3 CASE 419AQ ISSUE O Unit : mm 1 : Gate 2 : Source 3 : Drain Recommended Soldering Footprint 2.1 0.6 0.4 0.65 0.65 ORDERING INFORMATION Device MCH3475-TL-E MCH3475-TL-W Shipping Package Note Pb-Free MCPH3 SC-70FL, SOT-323 3,000 pcs. / Tape & Reel Pb-Free and Halogen Free † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the MCH3475 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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