MCR8DCNT4G

MCR8DCM, MCR8DCN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com Features • • • • • • • SCRs 8 AMPERES RMS 600 − 800 VOLTS Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and Holding Characteristics Available in Surface Mount Lead Form − Case 369C Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available G A K 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol 1 2 Value Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR8DCM MCR8DCN VDRM, VRRM On−State RMS Current (180° Conduction Angles; TC = 105°C) IT(RMS) 8.0 A Average On−State Current (180° Conduction Angles; TC = 105°C) IT(AV) 5.1 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) ITSM 80 A Circuit Fusing Consideration (t = 8.3 msec) I2t 26 A2sec PGM 5.0 W Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, TC = 105°C) Forward Average Gate Power (t = 8.3 msec, TC = 105°C) 3 Unit V DPAK CASE 369C STYLE 4 600 800 MARKING DIAGRAM PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width ≤ 1.0 sec, TC = 105°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to 125 °C Storage Temperature Range Tstg −40 to 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM, VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. YWW CR 8DCxG Y WW CR8DCx G = Year = Work Week = Device Code x= M or N = Pb−Free Package PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 November, 2005 − Rev. 4 1 Publication Order Number: MCR8DCM/D MCR8DCM, MCR8DCN THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJC RJA RJA 2.2 88 80 °C/W TL 260 °C Thermal Resistance − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2)m Maximum Lead Temperature for Soldering Purposes (Note 3) ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max − − − − 0.01 5.0 − 1.4 1.8 2.0 − 7.0 − 15 30 0.5 − 0.2 0.65 − − 1.0 2.0 − 4.0 − 22 − 30 60 4.0 − 22 − 30 60 50 200 − Unit OFF CHARACTERISTICS Peak Repetitive Forward or Peak Repetitive Reverse Blocking Current TJ = 25°C (VAK = Rated VDRM or VRRM, Gate Open) TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak On−State Voltage (Note 4) (ITM = 16 A) VTM Gate Trigger Current (Continuous dc) (VAK = 12 V, RL = 100 , TJ = 25°C) (TJ = −40°C) IGT Gate Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 , TJ = 25°C) (TJ = −40°C) (TJ = 125°C) VGT Holding Current (VAK = 12 V, Initiating Current = 200 mA, Gate Open) mA V IH TJ = 25°C TJ = −40°C Latching Current (VAK = 12 V, IG = 15 mA, TJ = 25°C) (VAK = 12 V, IG = 30 mA, TJ = −40°C) V mA IL mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VAK = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) 2. Surface mounted on minimum recommended pad size. 3. 1/8″ from case for 10 seconds. 4. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. dv/dt V/s ORDERING INFORMATION Device MCR8DCMT4 MCR8DCMT4G Package Shipping † DPAK DPAK (Pb−Free) 2500 / Tape & Reel MCR8DCNT4 MCR8DCNT4G DPAK DPAK (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MCR8DCM, MCR8DCN Voltage Current Characteristic of SCR + Current Anode + VTM Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) P(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) Anode − 125 120   = Conduction Angle 115 110 dc 105  = 30° 60° 90° 120° 180° 0 1.0 2.0 3.0 4.0 5.0 180° 8.0 120°  90°  = Conduction Angle 6.0 4.0 dc 60°  = 30° 2.0 0 6.0 0 1.0 2.0 3.0 4.0 5.0 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) IT(AV), AVERAGE ON−STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On−State Power Dissipation 100 6.0 1.0 TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 125°C r(t) , TRANSIENT RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON−STATE CURRENT (AMPS) 100 10 10 MAXIMUM @ TJ = 25°C 1.0 0.1 0.1 ZJC(t) = RJC(t)Sr(t) 0.01 0 1.0 2.0 3.0 4.0 5.0 0.1 1.0 10 100 1000 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On−State Characteristics Figure 4. Transient Thermal Response http://onsemi.com 3 10 K MCR8DCM, MCR8DCN 0.9 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT (mA) 100 10 1.0 −40 −25 −10 0.7 0.6 0.5 0.4 0.3 0.2 5.0 20 35 50 65 80 95 110 125 −40 −25 −10 5.0 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 100 IL, LATCHING CURRENT (mA) 100 10 1.0 −40 −25 −10 5.0 20 35 50 65 95 80 110 10 1.0 −40 −25 −10 125 5.0 20 35 50 65 80 95 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 1000 VD = 800 V TJ = 125°C STATIC dv/dt (V/  s) IH , HOLDING CURRENT (mA) 0.8 100 10 100 1000 RGK, GATE−CATHODE RESISTANCE (OHMS) Figure 9. Exponential Static dv/dt versus Gate−Cathode Resistance http://onsemi.com 4 10 K 125 MCR8DCM, MCR8DCN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− T STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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