MJD18002D2
Bipolar NPN Transistor
High Speed, High Gain Bipolar NPN
Power Transistor with Integrated
Collector−Emitter Diode and Built−In
Efficient Antisaturation Network
The MJD18002D2 is a state−of−the−art high speed, high gain
bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no longer a need to
guarantee an hFE window.
Features
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POWER TRANSISTOR
2 AMPERES
1000 VOLTS, 50 WATTS
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
•
•
•
•
•
•
•
H2BIP Structure which Minimizes the Spread
Integrated Collector−Emitter Free Wheeling Diode
Fully Characterized and Guaranteed Dynamic VCEsat
Characteristics Make It Suitable for PFC Application
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Six Sigma® Process Providing Tight and Reproductible Parameter
Spreads
Pb−Free Package is Available
4
1 2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
VCEO
450
Vdc
Collector−Base Breakdown Voltage
VCBO
1000
Vdc
Collector−Emitter Breakdown Voltage
VCES
1000
Vdc
Emitter−Base Voltage
VEBO
11
Vdc
Collector Current
Collector Current
− Continuous
− Peak (Note 1)
IC
ICM
2.0
5.0
Adc
Base Current
Base Current
− Continuous
− Peak (Note 1)
IB
IBM
1.0
2.0
Adc
Symbol
Value
Unit
PD
50
0.4
W
W/°C
TJ, Tstg
−65 to +150
°C
Thermal Resistance, Junction−to−Case
RqJC
5.0
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
71.4
°C/W
TL
260
°C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 seconds
March, 2009 − Rev. 3
MARKING DIAGRAM
YWW
180
02D2G
Y
WW
18002D2
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%.
© Semiconductor Components Industries, LLC, 2009
3
DPAK
CASE 369C
STYLE 1
1
Device
MJD18002D2T4
MJD18002D2T4G
Package
Shipping†
DPAK
3000/Tape & Reel
DPAK
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MJD18002D2/D
MJD18002D2
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
450
570
−
Vdc
Collector−Base Breakdown Voltage (ICBO = 1 mA)
VCBO
1000
1100
−
Vdc
Emitter−Base Breakdown Voltage (IEBO = 1 mA)
VEBO
11
14
−
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
−
−
100
mAdc
ICES
−
−
−
−
−
−
100
500
100
mAdc
IEBO
−
−
500
mAdc
−
−
0.78
0.87
1.0
1.1
−
−
0.36
0.50
0.6
1.0
−
−
0.40
0.65
0.75
1.2
14
8.0
25
15
−
−
6.0
4.0
10
6.0
−
−
ft
−
13
−
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
−
50
100
pF
Input Capacitance (VEB = 8 Vdc)
Cib
−
340
500
pF
−
1.2
1.5
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
(VCE = 500 V, VEB = 0)
Emitter−Cutoff Current (VEB = 10 Vdc, IC = 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
(IC = 1.0 Adc, IB = 0.2 Adc)
@ TC = 25°C
@ TC = 25°C
Collector−Emitter Saturation Voltage
(IC = 0.4 Adc, IB = 40 mAdc)
@ TC = 25°C
@ TC = 125°C
(IC = 1.0 Adc, IB = 0.2 Adc)
VBE(sat)
VCE(sat)
@ TC = 25°C
@ TC = 125°C
DC Current Gain
(IC = 0.4 Adc, VCE = 1.0 Vdc)
@ TC = 25°C
@ TC = 125°C
(IC = 1.0 Adc, VCE = 1.0 Vdc)
@ TC = 25°C
@ TC = 125°C
hFE
Vdc
Vdc
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
DIODE CHARACTERISTICS
VEC
Forward Diode Voltage
(IEC = 1.0 Adc)
@ TC = 25°C
(IEC = 0.4 Adc)
@ TC = 25°C
−
1.0
1.3
@ TC = 125°C
−
0.6
−
−
517
−
−
480
−
−
7.4
−
Forward Recovery Time
(IF = 0.4 Adc, di/dt = 10 A/ms)
@ TC = 25°C
(IF = 1.0 Adc, di/dt = 10 A/ms)
@ TC = 25°C
tfr
Vdc
ns
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation Voltage
Determinated 1 ms and 3 ms
respectively after rising IB1 reaches
90% of final IB1
VCE(dsat)
IC = 0.4 Adc
IB1 = 40 mA
VCC = 300 Vdc
@ 1 ms
@ TC = 25°C
@ 3 ms
@ TC = 25°C
−
2.5
−
IC = 1 Adc
IB1 = 0.2 A
VCC = 300 Vdc
@ 1 ms
@ TC = 25°C
−
11.7
−
@ 3 ms
@ TC = 25°C
−
1.3
−
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2
V
MJD18002D2
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
@ TC = 25°C
@ TC = 125°C
ton
−
−
225
375
350
−
ns
@ TC = 25°C
@ TC = 125°C
toff
0.8
−
−
1.5
1.1
−
ms
@ TC = 25°C
@ TC = 125°C
ton
−
−
100
94
150
−
ns
@ TC = 25°C
@ TC = 125°C
toff
0.95
−
−
1.5
1.25
−
ms
SWITCHING CHARACTERISTICS: Resistive Load (D.C.S. 10%, Pulse Width = 40 ms)
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
IC = 0.4 Adc, IB1 = 40 mAdc
IB2 = 200 mAdc
VCC = 300 Vdc
IC = 1.0 Adc, IB1 = 0.2 Adc
IB2 = 0.5 Adc
VCC = 300 Vdc
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH)
Fall Time
Storage Time
Cross−over Time
IC = 0.4 Adc
IB1 = 40 mAdc
IB2 = 0.2 Adc
Fall Time
Storage Time
Cross−over Time
IC = 0.8 Adc
IB1 = 160 mAdc
IB2 = 160 mAdc
Fall Time
Storage Time
Cross−over Time
IC = 1.0 Adc
IB1 = 0.2 Adc
IB2 = 0.5 Adc
@ TC = 25°C
@ TC = 125°C
tf
−
−
130
120
175
−
ns
@ TC = 25°C
@ TC = 125°C
ts
0.4
−
−
0.7
0.7
−
ms
@ TC = 25°C
@ TC = 125°C
tc
−
−
110
100
175
−
ns
@ TC = 25°C
@ TC = 125°C
tf
−
−
130
140
175
−
ns
@ TC = 25°C
@ TC = 125°C
ts
2.1
−
−
3.0
2.4
−
ms
@ TC = 25°C
@ TC = 125°C
tc
−
−
275
350
350
−
ns
@ TC = 25°C
@ TC = 125°C
tf
−
−
100
100
150
−
ns
@ TC = 25°C
@ TC = 125°C
ts
−
−
1.05
1.45
1.2
−
ms
@ TC = 25°C
@ TC = 125°C
tc
−
−
100
115
150
−
ns
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3
MJD18002D2
TYPICAL STATIC CHARACTERISTICS
100
100
80
60
40
VCE = 5 V
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
VCE = 1 V
TJ = 125°C
25°C
−20°C
20
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
80
60
25°C
40
−20°C
20
0
10
TJ = 125°C
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 V
Figure 2. DC Current Gain @ 5 V
4
100
3
IC/IB = 20
VCE, VOLTAGE (VOLTS)
VCE, VOLTAGE (VOLTS)
TJ = 25°C
2A
1A
2
1.5 A
400 mA
1
0
IC = 200 mA
0.001
0.01
0.1
1
IB, BASE CURRENT (AMPS)
10
1
TJ = 125°C
0.1
10
Figure 3. Collector Saturation Region
−20°C
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
10
IC/IB = 10
IC/IB = 5
VCE, VOLTAGE (VOLTS)
VCE, VOLTAGE (VOLTS)
25°C
Figure 4. Collector−Emitter Saturation Voltage
100
10
1
TJ = 125°C
0.1
10
−20°C
0.001
25°C
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1
TJ = 125°C
0.1
10
Figure 5. Collector−Emitter Saturation Voltage
−20°C
0.001
25°C
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 6. Collector−Emitter Saturation Voltage
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4
MJD18002D2
TYPICAL STATIC CHARACTERISTICS
10
10
IC/IB = 10
VBE, VOLTAGE (VOLTS)
VBE, VOLTAGE (VOLTS)
IC/IB = 5
1 −20°C
25°C
TJ = 125°C
0.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
1 −20°C
25°C
TJ = 125°C
0.1
10
0.001
Figure 7. Base−Emitter Saturation Region
IC/IB = 5
FORWARD DIODE VOLTAGE (VOLTS)
VBE, VOLTAGE (VOLTS)
IC/IB = 20
1 −20°C
25°C
TJ = 125°C
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 8. Base−Emitter Saturation Region
IC/IB = 10
10
0.1
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
10
1
VEC(V) = −20°C
125°C
0.1
25°C
0.01
0.1
1
10
REVERSE EMITTER−COLLECTOR CURRENT (AMPS)
Figure 9. Base−Emitter Saturation Region
IC/IB = 20
Figure 10. Forward Diode Voltage
TYPICAL SWITCHING CHARACTERISTICS
1000
3000
TJ = 125°C
TJ = 25°C
2500
100
Cob (pF)
10
t, TIME (ms)
C, CAPACITANCE (pF)
Cib (pF)
TJ = 25°C
f(test) = 1 MHz
2000
IBon = IBoff
IC/IB = 10
VCC = 300 V
1500
PW = 40 ms
1000
500
1
1
10
VR, REVERSE VOLTAGE (VOLTS)
0
100
IC/IB = 5
0.1
Figure 11. Capacitance
0.4
0.7
1
1.3
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Resistive Switch Time, ton
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5
1.6
MJD18002D2
TYPICAL SWITCHING CHARACTERISTICS
5.5
3
TJ = 125°C
TJ = 25°C
5.0
TJ = 125°C
VCC = 300 V
PW = 40 ms
4.0
2.5
t, TIME (ms)
4.5
t, TIME (ms)
IBon = IBoff
IC/IB = 10
3.5
3.0
IC/IB = 5
2.5
TJ = 25°C
2
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
1.5
2.0
1.5
0.1
0.4
0.7
1
1.3
IC, COLLECTOR CURRENT (AMPS)
1
1.6
Figure 13. Resistive Switch Time, toff
TJ = 125°C
TJ = 25°C
600
t, TIME (ms)
400
1.5
4
TJ = 125°C
TJ = 25°C
IC/IBon = 5
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
500
0.5
1
IC, COLLECTOR CURRENT (AMPS)
Figure 14. Inductive Storage Time, tsi @ IC/IB = 5
3
tc
t, TIME (ms)
700
0
300
tfi
200
IC = 1 A
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
2
IC = 300 mA
1
100
0
0
0.5
1
IC, COLLECTOR CURRENT (AMPS)
0
1.5
3
Figure 15. Inductive Switching, tc & tfi @ IC/IB = 5
1000
1800
600
IC = 1 A
400
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
IC = 1 A
600
IC = 0.3 A
200
0
15
12
TJ = 125°C
TJ = 25°C
1200
t, TIME (ms)
tfi, FALL TIME (ns)
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
9
hFE, FORCED GAIN
Figure 16. Inductive Storage Time
TJ = 125°C
TJ = 25°C
800
6
IC = 0.3 A
3
5
7
9
11
hFE, FORCED GAIN
13
0
15
3
Figure 17. Inductive Fall Time
6
9
hFE, FORCED GAIN
12
Figure 18. Inductive Cross−Over Time
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6
15
MJD18002D2
TYPICAL SWITCHING CHARACTERISTICS
1600
1.6
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
TJ = 125°C
TJ = 25°C
tc
800
tfi
400
0
0.3
IC/IB = 5
1.2
t, TIME (ms)
t, TIME (ms)
1200
0.8
0.4
0.7
1.1
IC, COLLECTOR CURRENT (AMPS)
0
1.5
TJ = 125°C
TJ = 25°C
0
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IBoff = IC/2,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
250
t, TIME (ms)
t, TIME (ms)
300
IC/IB = 5
100
1.5
Figure 20. Inductive Switching Time, tsi
IBoff = IC/2,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
150
IC/IB = 10
0.5
1
IC, COLLECTOR CURRENT (AMPS)
Figure 19. Inductive Switching Time,
tfi & TC @ G = 10
200
IBoff = IC/2,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
IC/IB = 10
200
150
100
IC/IB = 10
50
0
IC/IB = 5
50
1.5
0.5
1
IC, COLLECTOR CURRENT (AMPS)
0
Figure 21. Inductive Storage Time, tfi
Figure 22. Inductive Storage Time, tc
CROSS−OVER TIME (ns)
2.4
10
IBon = IBoff,
VCC = 15 V,
VZ = 300 V
LC = 200 mH
2.2
2.0
IB = 200 mA
tfi
8
6
4
10% IC
tc
90% IB1
IB
3
1.4
10% Vclamp
Vclamp
5
IB = 100 mA
90% IC
tsi
7
IB = 50 mA
IB = 500 mA
1.6
IC
9
1.8
2
1.2
1
1.5
0.5
1
IC, COLLECTOR CURRENT (AMPS)
0
0.4
0.8
hFE, FORCED GAIN
1
0
1.6
1.2
0
1
2
3
4
TIME
5
6
7
Figure 24. Inductive Switching Measurements
Figure 23. Inductive Storage Time, tsi
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7
8
MJD18002D2
Figure 25. Inductive Load Switching Drive Circuit
+15 V
IC PEAK
1 mF
100 W
3W
150 W
3W
100 mF
MTP8P10
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
MPF930
+10 V
Iout
IB
A
COMMON
IB2
50
W
RB2
MJE210
500 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
MTP12N10
150 W
3W
1 mF
VFRM
VFR (1.1 VF) Unless
Otherwise Specified
VF
10
8
0.1 VF
VF
tfr
6
IF
4
10% IF
2
0
0
2
4
6
8
10
10 ms
DC
1
10
Figure 26. tfr Measurement
50 ms
1000
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
1
TC = 125°C
Gain = 4
LC = 500 mH
2
POWER DERATING FACTOR
IC, COLLECTOR CURRENT (AMPS)
1 ms
1 ms
Figure 27. Forward Bias Safe Operating Area
2.5
1.5
VBE(off) = −1.5 V
1
VBE(off) = −5 V
0.5
VBE = 0 V
0
5 ms
0.1
0.01
10
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
EXTENDED SOA
12
IC, COLLECTOR CURRENT (AMPS)
-Voff
Inductive Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
0
0.6
Thermal Derating
0.4
0.2
0
200
1200
400
800
1000
600
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Second Breakdown Derating
0.8
20
Figure 28. Reverse Bias Safe Operating Area
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
Figure 29. Forward Bias Power Derating
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8
160
MJD18002D2
Figure 27 may be found at any case temperature by using the
appropriate curve on Figure 29.
TJ(pk) may be calculated from the data in Figure 30. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn−off with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 28). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC−VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 27 is
based on TC = 25°C; TJ(pk) is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when TC > 25°C. Second
Breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
r(t) TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.5
0.2
0.1
0.05
0.1
P(pk)
0.02
t1
0.01
t2
SINGLE PULSE
0.01
DUTY CYCLE, D = t1/t2
0.01
0.1
1
RqJC(t) = r(t) RqJC
RqJC = 55°/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk)RqJC(t)
10
100
1000
t, TIME (ms)
Figure 30. Typical Thermal Response (ZqJC(t)) for MJD18002D2
1100
440
BVCER (Volts) @ 10 mA
1000
400
900
TJ = 25°C
800
380
360
700
600
340
BVCER(sus) @ 200 mA
500
400
di/dt = 10 A/ms
TC = 25°C
420
10
100
320
1000
RBE ()
10,000
100,000
300
0
Figure 31. BVCER
1
1.5
0.5
IF, FORWARD CURRENT (AMPS)
Figure 32. Forward Recovery Time, tfr
Six Sigma is a registered trademark and servicemark of Motorola, Inc.
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9
2
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
C
A
B
c2
4
L3
Z
D
1
L4
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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