MJE18002G

MJE18002G Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switch-mode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching ♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail) Tight Parametric Distributions are Consistent Lot−to−Lot Standard TO−220 These Devices are Pb−Free and are RoHS Compliant* ♦ http://onsemi.com POWER TRANSISTOR 2.0 AMPERES 100 VOLTS − 50 WATTS ♦ • • • TO−220AB CASE 221A−09 STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Sustaining Voltage Rating VCEO 450 Vdc Collector−Emitter Breakdown Voltage VCES 1000 Vdc Emitter−Base Voltage VEBO 9.0 Vdc Collector Current − Continuous − Peak (Note 1) IC ICM 2.0 5.0 Adc Base Current − Continuous − Peak (Note 1) IB IBM 1.0 2.0 Adc PD 50 0.4 W W/_C TJ, Tstg −65 to 150 _C Total Device Dissipation @ TC = 25_C Derate above 25°C Operating and Storage Temperature 1 2 3 MARKING DIAGRAM MJE18002G AY WW THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristics RqJC 2.5 _C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds TL 260 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MJE18002G Package Shipping TO−220 (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 April, 2010 − Rev. 7 1 Publication Order Number: MJE18002/D MJE18002G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ VCEO(sus) 450 − − Vdc ICEO − − 100 mAdc ICES − − − − − − 100 500 100 mAdc IEBO − − 100 mAdc Base−Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) Base−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VBE(sat) − − 0.825 0.92 1.1 1.25 Vdc Collector−Emitter Saturation Voltage (IC = 0.4 Adc, IB = 40 mAdc) VCE(sat) − − − − 0.2 0.2 0.25 0.3 0.5 0.5 0.5 0.6 hFE 14 − 11 11 6.0 5.0 10 − 27 17 20 8.0 8.0 20 34 − − − − − − − fT − 13 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 35 60 pF Input Capacitance (VEB = 8.0 V) Cib − 400 600 pF VCE(dsat) − − 3.5 8.0 − − Vdc @ TC = 125°C − − 1.5 3.8 − − @ TC = 125°C − − 8.0 14 − − @ TC = 125°C − − 2.0 7.0 − − Characteristic Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 800 V, VEB = 0) TC = 125°C TC = 125°C Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) ON CHARACTERISTICS @ TC = 125°C (IC = 1.0 Adc, IB = 0.2 Adc) @ TC = 125°C DC Current Gain (IC = 0.2 Adc, VCE = 5.0 Vdc) @ TC = 125°C DC Current Gain (IC = 0.4 Adc, VCE = 1.0 Vdc) @ TC = 125°C DC Current Gain (IC = 1.0 Adc, VCE = 1.0 Vdc) @ TC = 125°C DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz) Dynamic Saturation: determined 1.0 ms and 3.0 ms after rising IB1 reach 0.9 final IB1 (see Figure 18) IC = 0.4 A IB1 = 40 mA VCC = 300 V 1.0 ms IC = 1.0 A IB1 = 0.2 A VCC = 300 V 1.0 ms 3.0 ms 3.0 ms @ TC = 125°C 2. Proper strike and creepage distance must be provided. http://onsemi.com 2 MJE18002G ELECTRICAL CHARACTERISTICS − continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ton − − 200 130 300 − ns toff − − 1.2 1.5 2.5 − ms ton − − 85 95 150 − ns toff − − 1.7 2.1 2.5 − ms tfi − − 125 120 200 − ns tsi − − 0.7 0.8 1.25 − ms tc − − 110 110 200 − ns tfi − − 110 120 175 − ns tsi − − 1.7 2.25 2.75 − ms tc − − 200 250 300 − ns tfi − − 140 185 200 − ns tsi − − 2.2 2.5 3.0 − ms tc − − 140 220 250 − ns SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 ms) Turn−On Time Turn−Off Time Turn−On Time Turn−Off Time IC = 0.4 Adc IB1 = 40 mAdc IB2 = 0.2 Adc VCC = 300 V IC = 1.0 Adc IB1 = 0.2 Adc IB2 = 0.5 Adc VCC = 300 V @ TC = 125°C @ TC = 125°C @ TC = 125°C @ TC = 125°C SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 mH) Fall Time IC = 0.4 Adc, IB1 = 40 mAdc, IB2 = 0.2 Adc @ TC = 125°C Storage Time @ TC = 125°C Crossover Time @ TC = 125°C Fall Time IC = 1.0 Adc, IB1 = 0.2 Adc, IB2 = 0.5 Adc @ TC = 125°C Storage Time @ TC = 125°C Crossover Time @ TC = 125°C Fall Time IC = 0.4 Adc, IB1 = 50 mAdc, IB2 = 50 mAdc @ TC = 125°C Storage Time @ TC = 125°C Crossover Time @ TC = 125°C http://onsemi.com 3 MJE18002G TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V TJ = 125°C h FE, DC CURRENT GAIN h FE, DC CURRENT GAIN 100 TJ = 25°C 10 1 0.01 0.01 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) TJ = 125°C 10 VCE = 5 V TJ = -20°C 1 0.01 0.01 10.00 10.00 TJ = 25°C 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt 10.00 10.00 Figure 2. DC Current Gain @ 5 Volts 2 10.00 1 2A 1.5 A 1A V CE , VOLTAGE (VOLTS) V CE , VOLTAGE (VOLTS) TJ = 25°C 1.00 0.10 IC/IB = 10 IC/IB = 5 0.4 A TJ = 25°C TJ = 125°C IC = 0.2 A 0 0.001 0.001 0.010 0.100 0.010 0.100 IB, BASE CURRENT (mA) 1.000 1.000 0.01 0.01 0.01 Figure 3. Collector Saturation Region 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) Figure 4. Collector−Emitter Saturation Voltage 1.1 1000 1.0 Cib 0.9 C, CAPACITANCE (pF) V BE, VOLTAGE (VOLTS) 10.00 10.00 0.8 TJ = 25°C 0.7 0.6 100 10 Cob TJ = 125°C IC/IB = 10 IC/IB = 5 0.5 0.4 0.01 0.01 TJ = 25°C f = 1 MHz 0.10 1.00 0.10 1.00 IC, COLLECTOR CURRENT (AMPS) 10.00 10.00 1 11 Figure 5. Base−Emitter Saturation Region 10 100 10 100 VCE, COLLECTOR-EMITTER (VOLTS) Figure 6. Capacitance http://onsemi.com 4 1000 1000 MJE18002G TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 2500 4500 IB(off) = IC/2 VCC = 300 V PW = 20 ms IB(off) = IC/2 VCC = 300 V PW = 20 ms IC/IB = 5 3500 3000 1500 TJ = 125°C IC/IB = 5 IC/IB = 10 1000 t, TIME (ns) t, TIME (ns) 2000 4000 TJ = 25°C TJ = 125°C 2500 2000 IC/IB = 10 1500 TJ = 25°C 1000 500 500 0 0.4 0.4 0.6 0.6 0.8 1.0 1.2 1.4 1.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 2.0 2.0 0 0.4 0.4 0.6 0.6 Figure 7. Resistive Switching, ton t si, STORAGE TIME (ns) t, TIME (ns) 2000 IC/IB = 5 1000 500 TJ = 25°C TJ = 125°C IC/IB = 10 0.6 0.6 0.8 1.0 1.2 1.4 1.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 1500 1000 500 2.0 2.0 IC = 0.4 A 0 55 77 Figure 9. Inductive Storage Time, tsi tc 350 300 t, TIME (ns) t, TIME (ns) IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 400 tfi 300 tc 200 11 99 11 hFE, FORCED GAIN 13 13 tc tfi TJ = 25°C TJ = 125°C 250 200 150 tfi 100 0.6 0.8 1.0 1.2 1.4 1.6 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) tc 100 TJ = 25°C TJ = 125°C 0 0.4 0.4 15 15 450 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 400 TJ = 25°C TJ = 125°C Figure 10. Inductive Storage Time 600 500 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH IC = 1 A 1500 0 0.4 0.4 2.0 2.0 2500 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 2000 1.8 1.8 Figure 8. Resistive Switching, toff 3000 2500 0.8 1.0 1.2 1.4 1.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 tfi 50 2.0 Figure 11. Inductive Switching, tc and tfi, IC/IB = 5 0 0.4 0.4 0.6 1.2 1.4 1.6 0.8 1.0 1.2 1.4 1.6 IC, COLLECTOR CURRENT (AMPS) 1.8 1.8 2.0 Figure 12. Inductive Switching, tc and tfi, IC/IB = 10 http://onsemi.com 5 MJE18002G TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 250 180 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH 140 230 IC = 0.4 A 120 100 IC = 1 A TJ = 25°C TJ = 125°C 80 60 55 66 77 88 190 170 150 130 110 IC = 0.4 A 90 TJ = 25°C TJ = 125°C 70 99 10 11 10 11 hFE, FORCED GAIN 12 12 13 13 14 14 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 mH IC = 1 A 210 TC, CROSS‐OVER TIME (ns) t fi , FALL TIME (ns) 160 50 55 15 15 6 Figure 13. Inductive Fall Time 77 8 9 10 11 11 hFE, FORCED GAIN 12 13 14 15 15 Figure 14. Inductive Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 2.5 10.00 1ms 50ms 10ms 1ms I C, COLLECTOR CURRENT (AMPS) I C, COLLECTOR CURRENT (AMPS) 5ms DC (MJE18002) 1.00 0.10 0.01 10 10 100 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area POWER DERATING FACTOR 0.6 0.4 0.0 20 THERMAL DERATING 40 60 80 100 120 100 120 TC, CASE TEMPERATURE (°C) 140 140 VBE(off) = 0.5 V 0.5 0V -1.5 V 200 400 600 800 1000 800 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1200 1200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20. At any case temperatures, thermal limitations will reduce the power that can be handled to values less the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn−off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. SECOND BREAKDOWN DERATING 0.2 1.0 Figure 16. Reverse Bias Switching Safe Operating Area 1.0 0.8 1.5 0.0 0 1000 1000 TC ≤ 125°C IC/IB ≥ 4 LC = 500 mH 2.0 160 Figure 17. Forward Bias Power Derating http://onsemi.com 6 MJE18002G 10 5 VCE 4 dyn 1 ms 3 8 2 VOLTS 90% IC tfi IC 9 tsi 7 dyn 3 ms 1 6 0 5 TC VCLAMP 10% IC 10% VCLAMP 4 -1 90% IB -2 1 ms -3 -4 90% IB1 2 3 ms IB -5 0 IB 3 1 0 1 2 3 4 TIME 5 6 7 0 8 1 Figure 18. Dynamic Saturation Voltage Measurements 2 3 4 TIME 5 6 7 8 Figure 19. Inductive Switching Measurements +15 V 1 mF 150 W 3V 100 W 3V IC PEAK 100 mF MTP8P10 VCE PEAK VCE MTP8P10 Rb1 MPF930 IB1 MUR105 MPF930 +10 V Iout IB A IB2 50 W Rb2 MJE210 COMMON 150 W 3V 500 mF V(BR)CEO(sus) L = 10 mH RB2 = ∞ VCC = 20 VOLTS IC(pk) = 100 mA MTP12N10 1 mF -Voff INDUCTIVE SWITCHING L = 200 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 mH RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Table 1. Inductive Load Switching Drive Circuit r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL THERMAL RESPONSE 1.00 0.5 0.2 0.1 0.10 0.05 P(pk) 0.02 t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.10 1.00 RqJC(t) = r(t) RqJC RqJC = °C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 10.00 t, TIME (ms) Figure 20. Typical Thermal Response (ZqJC(t)) for MJE18002 http://onsemi.com 7 100.00 1000.0 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative