MJL21195G

MJL21195(PNP), MJL21196(NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. http://onsemi.com Features • • • • • • Total Harmonic Distortion Characterized High DC Current Gain Excellent Gain Linearity High SOA Epoxy Meets UL 94, V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant* 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W COMPLEMENTARY COLLECTOR 2 MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc IC 16 Adc ICM 30 Adc Base Current − Continuous IB 5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C TJ, Tstg −   65 to +150 °C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Collector Current − Continuous Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 0.7 °C/W 1 BASE COLLECTOR 2 1 BASE 3 EMITTER 3 EMITTER MARKING DIAGRAM 1 2 MJL2119x AYYWWG 3 TO−264 CASE 340G STYLE 2 x A YY WW G = 5 or 6 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping MJL21195G TO−264 (Pb−Free) 25 Units / Rail MJL21196G TO−264 (Pb−Free) 25 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 August, 2013 − Rev. 5 1 Publication Order Number: MJL21195/D MJL21195 (PNP), MJL21196 (NPN) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max 250 − − − − 100 − − 100 − − 100 4.0 2.25 − − − − 25 8.0 − − 100 − − − 2.2 − − − − 1.4 4 Unit OFF CHARACTERISTICS (Note 2) VCEO(sus) Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) Vdc mAdc ICEO OFF CHARACTERISTICS (Note 3) Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX mAdc mAdc SECOND BREAKDOWN (Note 3) IS/b Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (Nonrepetitive) (VCE = 80 Vdc, t = 1 s (Nonrepetitive) Adc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) − Vdc Vdc DYNAMIC CHARACTERISTICS (Note 3) THD Total Harmonic Distortion at the Output (VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS) hFE unmatched (Matched pair hFE = 50 @ 5 A/5 V) hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) % − 0.8 − − 0.08 − 4 − − − − 500 fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) MHz Cob pF PNP MJL21195 6.5 F T, CURRENT BANDWIDTH PRODUCT (MHz) F T, CURRENT BANDWIDTH PRODUCT (MHz) 2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. 6.0 VCE = 10 V 5.5 5.0 VCE = 5 V 4.5 4.0 3.5 TJ = 25°C ftest = 1 MHz 3.0 2.5 2.0 0.1 1.0 10 NPN MJL21196 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 VCE = 10 V VCE = 5 V TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 10 MJL21195 (PNP), MJL21196 (NPN) TYPICAL CHARACTERISTICS PNP MJL21195 NPN MJL21196 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 TJ = 100°C 100 25°C -25°C TJ = 100°C 100 25°C -25°C VCE = 20 V VCE = 20 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 0.1 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJL21195 NPN MJL21196 100 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 TJ = 100°C 100 25°C -25°C TJ = 100°C 100 25°C -25°C VCE = 5 V VCE = 5 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 0.1 Figure 5. DC Current Gain, VCE = 5 V PNP MJL21195 100 NPN MJL21196 30 IC , COLLECTOR CURRENT (A) 2.0 A 25 1.0 10 IC, COLLECTOR CURRENT (A) Figure 6. DC Current Gain, VCE = 5 V 30 IC , COLLECTOR CURRENT (A) 1.0 10 IC, COLLECTOR CURRENT (A) 1.5 A 20 1.0 A 15 IB = 0.5 A 10 5.0 2.0 A 1.5 A 25 1.0 A 20 IB = 0.5 A 15 10 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (V) 25 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 MJL21195 (PNP), MJL21196 (NPN) TYPICAL CHARACTERISTICS PNP MJL21195 NPN MJL21196 3.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1.4 TJ = 25°C IC/IB = 10 2.5 2.0 1.5 VBE(sat) 1.0 0.5 TJ = 25°C IC/IB = 10 1.2 1.0 VBE(sat) 0.8 0.6 0.4 VCE(sat) 0.2 VCE(sat) 0 0 1.0 10 IC, COLLECTOR CURRENT (A) 100 0.1 Figure 10. Typical Saturation Voltages PNP MJL21195 NPN MJL21196 10 TJ = 25°C 1.0 VCE = 20 V VCE = 5 V 0.1 0.1 1.0 10 100 TJ = 25°C 1.0 VCE = 20 V VCE = 5 V 0.1 0.1 10 100 Figure 12. Typical Base−Emitter Voltage There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 100 IC , COLLECTOR CURRENT (AMPS) 1.0 IC, COLLECTOR CURRENT (A) Figure 11. Typical Base−Emitter Voltage 10 ms 10 1 Sec 50 ms 1.0 250 ms 0.1 10 100 10 IC, COLLECTOR CURRENT (A) 1.0 1.0 10 IC, COLLECTOR CURRENT (A) Figure 9. Typical Saturation Voltages VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 0.1 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJL21195 (PNP), MJL21196 (NPN) 10000 10000 C, CAPACITANCE (pF) Cib 1000 Cob 1000 TJ = 25°C ftest = 1 MHz TJ = 25°C ftest = 1 MHz 100 Cob 100 0.1 1.0 10 100 0.1 1.0 10 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 14. MJL21195 Typical Capacitance Figure 15. MJL21196 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) Cib 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT -50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 8.0 W 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−3BPL (TO−264) CASE 340G−02 ISSUE J DATE 17 DEC 2004 SCALE 1:2 Q 0.25 (0.010) −B− M T B −T− M C E U N A R 1 2 L 3 P F 2 PL K W G J H D 3 PL 0.25 (0.010) STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER M T B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E F G H J K L N P Q R U W S STYLE 3: PIN 1. GATE 2. SOURCE 3. DRAIN MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125 GENERIC MARKING DIAGRAM* STYLE 4: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 5: PIN 1. GATE 2. COLLECTOR 3. EMITTER XXXXXX AYYWW XXXXXX A YY WW = Specific Device Code = Location Code = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98ASB42780B TO−3BPL (TO−264) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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