MJW3281A

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW1302A are PowerBase t power transistors for high power audio, disk head positioners and other linear applications. Features • Designed for 100 W Audio Frequency • Gain Complementary: • • • • Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area − 1 A/100 V @ 1 Second High fT − 30 MHz Typical Pb−Free Packages are Available* http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 1 2 TO−247 CASE 340L 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 230 Vdc Collector−Base Voltage VCBO 230 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 230 Vdc IC 15 25 Adc Collector Current Collector Current − Continuous − Peak (Note 1) Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C −    65 to +150 °C Operating and Storage Junction Temperature Range TJ, Tstg THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 0.625 °C/W Thermal Resistance, Junction−to−Ambient RqJA 40 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. MARKING DIAGRAM MJWxxxxA AYWWG 1 BASE xxxx A Y WW G Device Package Shipping MJW3281A TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail MJW3281AG MJW1302AG © Semiconductor Components Industries, LLC, 2010 March, 2010 − Rev. 4 1 = 3281 or 1302 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION MJW1302A *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3 EMITTER 2 COLLECTOR Publication Order Number: MJW3281A/D MJW3281A (NPN) MJW1302A (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 230 − − − − 50 − − 5 4 1 − − − − 50 50 50 50 50 45 12 125 − − − 115 − 35 200 200 200 200 200 − − − 0.4 2 − − 2 − 30 − − − 600 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCB = 230 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 100 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 7 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) (IC = 15 Adc, VCE = 5 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) VCE(sat) Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Cob http://onsemi.com 2 MHz pF MJW3281A (NPN) MJW1302A (PNP) TYPICAL CHARACTERISTICS PNP MJW1302A NPN MJW3281A 60 VCE = 10 V 40 5V 30 20 10 TJ = 25°C ftest = 1 MHz 0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) VCE = 10 V f, T CURRENT BANDWIDTH PRODUCT (MHz) f, T CURRENT BANDWIDTH PRODUCT (MHz) 50 50 5V 40 30 20 TJ = 25°C ftest = 1 MHz 10 0 10 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product PNP MJW1302A NPN MJW3281A 1000 TJ = 100°C 25°C h FE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 25°C 100 TJ = 100°C 100 -25°C -25°C VCE = 20 V VCE = 20 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 Figure 3. DC Current Gain, VCE = 20 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 4. DC Current Gain, VCE = 20 V PNP MJW1302A NPN MJW3281A 1000 h FE , DC CURRENT GAIN 1000 h FE , DC CURRENT GAIN 10 TJ = 100°C 25°C 100 -25°C 25°C TJ = 100°C 100 -25°C VCE = 5 V VCE = 5 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 0.1 100 Figure 5. DC Current Gain, VCE = 5 V 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. DC Current Gain, VCE = 5 V http://onsemi.com 3 100 MJW3281A (NPN) MJW1302A (PNP) TYPICAL CHARACTERISTICS PNP MJW1302A NPN MJW3281A 45 45 1.5 A 1.5 A 35 30 1A 25 0.5 A 20 15 10 5.0 35 1A 30 0.5 A 25 20 15 10 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 25 0 Figure 7. Typical Output Characteristics PNP MJW1302A NPN MJW3281A 2.5 TJ = 25°C IC/IB = 10 2.5 2.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 25 5.0 10 15 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. Typical Output Characteristics 3.0 VBE(sat) 1.5 1.0 0.5 TJ = 25°C IC/IB = 10 2.0 1.5 VBE(sat) 1.0 0.5 VCE(sat) VCE(sat) 0 0 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0.1 Figure 10. Typical Saturation Voltages PNP MJW1302A NPN MJW3281A 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 9. Typical Saturation Voltages VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) IB = 2 A 40 IB = 2 A IC , COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 40 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 VCE = 20 V (SOLID) 0.1 0.1 Figure 11. Typical Base−Emitter Voltage 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 12. Typical Base−Emitter Voltage http://onsemi.com 4 100 100 MJW3281A (NPN) MJW1302A (PNP) PNP MJW1302A NPN MJW3281A 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 10 mSec 10 100 mSec 1 Sec 1.0 0.1 10 mSec 10 100 mSec 1 Sec 1.0 0.1 1.0 10 100 VCE, COLLECTOR EMITTER (VOLTS) 1000 1.0 Figure 13. Active Region Safe Operating Area 10 100 VCE, COLLECTOR EMITTER (VOLTS) 1000 Figure 14. Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 13 and 14 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. TYPICAL CHARACTERISTICS PNP MJW1302A NPN MJW3281A 10000 Cib Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 Cob 1000 1000 Cob TJ = 25°C ftest = 1 MHz TJ = 25°C ftest = 1 MHz 100 100 0.1 1.0 10 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. MJW1302A Typical Capacitance Figure 16. MJW3281A Typical Capacitance PowerBase is a trademark of Semiconductor Components Industries, LLC. http://onsemi.com 5 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247 CASE 340L ISSUE G DATE 06 OCT 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG STYLE 1: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE (S) ANODE 2 CATHODES (S) STYLE 5: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 6: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. 2. 3. 4. 98ASB15080C TO−247 BASE COLLECTOR EMITTER COLLECTOR STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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