MMBFJ110

N-Channel JFET MMBFJ110 Features • This Device is Designed for Digital Switching Applications where Very Low On Resistance is Mandatory • Sourced from Process 58 • This is a Pb−Free Device www.onsemi.com 3 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) (Notes 1, 2) Symbol Parameter Value Unit 1 VDG Drain−Gate Voltage 25 V VGS Gate−Source Voltage −25 V IGF Forward Gate Current 10 mA 2 SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9 CASE 527AG TJ Junction Temperature 150 °C 1. Drain, 2. Source, 3. Gate −55 to 150 °C TJ, TSTG Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady−state limits. ON Semiconductor should be consulted on applications involving pulsed or low−duty−cycle operations. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise specified) (Note 3) Symbol PD RqJA Parameter Max MARKING DIAGRAM &Y 110 &G 110 = Specific Device Code &Y = Year Coding &G = Weekly Date Code Unit Total Device Dissipation 460 mW ORDERING INFORMATION Derate Above 25°C 3.68 mW/°C Thermal Resistance, Junction−to−Ambient 270 °C/W See detailed ordering and shipping information on page 4 of this data sheet. 3. Device mounted on FR−4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm2. © Semiconductor Components Industries, LLC, 2011 December, 2020 − Rev. 2 1 Publication Order Number: MMBFJ110/D MMBFJ110 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Parameter Test Condition Min Max Unit OFF CHARACTERISTICS V(BR)GSS IGSS VGS(off) Gate−Source Breakdown Voltage IG = −10 mA, VDS = 0 −25 − V Gate Reverse Current VGS = −15 V, VDS = 0 − −3.0 nA VGS = −15 V, VDS = 0, TA = 100°C − −200 −0.5 −4.0 V Gate−Source Cut−Off Voltage VDS = 15 V, ID = 10 nA ON CHARACTERISTICS IDSS rDS(on) Zero−Gate Voltage Drain Current (Note 4) VDS = 15 V, VGS = 0 10 − mA Drain−Source On Resistance VDS ≤ 0.1 V, VGS = 0 − 18 W SMALL SIGNAL CHARACTERISTICS Cdg(on) Csg(on) Drain−Gate & Source−Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz − 85 pF Cdg(off) Csg(off) Drain−Gate & Source−Gate Off Capacitance VDS = 0, VGS = −10 V, f = 1.0 MHz − 15 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2%. TYPICAL PERFORMANCE CHARACTERISTICS 250 TA = 25°C TYP VGS(off) = −2.9 V ID, DRAIN CURRENT (mA) 200 VGS = −0.1 V 150 −0.5 V 100 −1.0 V 50 −1.5 V −2.0 V 0 0 1 2 3 4 5 6 7 8 9 VDS, DRAIN SOURCE VOLTAGE (V) Figure 1. Common Drain−Source www.onsemi.com 2 10 11 12 13 14 15 MMBFJ110 100 1000 VGS = 100 mV ID = 100 mA IDSS − DRAIN CURRENT (mA) rDS − DRAIN “ON” RESISTANCE (W) TYPICAL PERFORMANCE CHARACTERISTICS (continued) 10 1 −1 VGS = 0 PULSED VDS = 100 mA VGS(off) @ VDS = 15 V, ID = 10 nA 100 10 −1 −4 Figure 3. Drain Current vs. Gate−Source Cut−Off Voltage 100 10 tON − TURN−ON TIME (ns) VDG = 10 V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz 10 5 ID = 1.0 mA ID = 10 mA 1 0.01 0.03 ON en − NOISE VOLTAGE (nV / √Hz) Figure 2. Drain ON Resistance 50 0.1 0.5 1 2 10 8 6 ID = 30 mA 4 ID = 10 mA 2 0 100 TA = 25°C VDD = 1.5 V VGS = −12 V 0 f, FREQUENCY (Hz) rDS− DRAIN “ON” RESISTANCE (W) tOFF − TURN−OFF TIME (ns) 40 30 VGS(off) = −3.5 V TA = 25°C VDD = 1.5 V VGS = −12 V 0 0 5 10 15 −4 −6 −8 −10 Figure 5. Switching Turn−On Time vs. Gate−Source Cut−Off Voltage 50 10 −2 VGS(off), GATE CUTOFF VOLTAGE (V) Figure 4. Noise Voltage vs. Frequency 20 −4 VGS(off), GATE CUTOFF VOLTAGE (V) VGS(off), GATE CUTOFF VOLTAGE (V) 20 100 VGS = 0 V 10 25°C −55°C VGS(off) = −4.0 V 1 1 25 TA = 125°C VGS(off) = −2.9 V 10 ID, DRAIN CURRENT (mA) ID, DRAIN CURRENT (mA) Figure 6. Switching Turn−On Time vs. Drain Current Figure 7. On Resistance vs. Drain Current www.onsemi.com 3 100 MMBFJ110 1000 gfs, TRANSCONDUCTANCE (mmhos) gos, TRANSCONDUCTANCE (mmhos) TYPICAL PERFORMANCE CHARACTERISTICS (continued) TA = 25°C f = 1.0 kHz VGS(off) = −4.0 V 100 10 1 0,1 1 10 100 TA = 25°C f = 1.0 kHz VGS = 10 V VGS(off) = −3.0 V @ VDS = 15 V, ID = 10 nA 10 1 0,1 0,1 1 ID, DRAIN CURRENT (mA) 10 ID, DRAIN CURRENT (mA) Figure 8. Output Conductance vs. Drain Current Figure 9. Output Conductance vs. Drain Current POWER DISSSIPATION, (mW) 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 T, AMBIENT TEMPERATURE (°C) Figure 10. Power Dissipation vs. Ambient Temperature ORDERING INFORMATION Part Number MMBFJ108 Top Mark Package Shipping† 110 SSOT 3L (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SUPERSOT is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23/SUPERSOTt−23, 3 LEAD, 1.4x2.9 CASE 527AG ISSUE A GENERIC MARKING DIAGRAM* XXXMG G DOCUMENT NUMBER: DESCRIPTION: XXX = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) 98AON34319E DATE 09 DEC 2019 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOT−23/SUPERSOT−23, 3 LEAD, 1.4X2.9 PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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