MMBT2222LT3G

MMBT2222LT1G, MMBT2222ALT1G General Purpose Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage MMBT2222LT1G MMBT2222ALT1G Collector − Base Voltage MMBT2222LT1G MMBT2222ALT1G MMBT2222LT1G MMBT2222ALT1G Symbol VCEO Value 30 40 60 75 5.0 6.0 600 1100 Unit Vdc 1 BASE 2 EMITTER 3 VCBO Vdc Emitter − Base Voltage VEBO Vdc 1 2 SOT−23 CASE 318 STYLE 6 Collector Current − Continuous Collector Current − Peak (Note 3) IC ICM mAdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD Max 225 1.8 556 300 2.4 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 xxx = 1P or M1B M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. MARKING DIAGRAM RqJA PD xxx M G G RqJA TJ, Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. 3. Reference SOA curve. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010 October, 2009 − Rev. 9 1 Publication Order Number: MMBT2222LT1/D MMBT2222LT1G, MMBT2222ALT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222A Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222A Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222A Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) (IC = 150 mAdc, VCE = 10 Vdc) (Note 4) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4) (IC = 500 mAdc, VCE = 10 Vdc) (Note 4) Collector − Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base − Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (Note 5) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small − Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222 MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222A MMBT2222 MMBT2222A fT 250 300 − − − 2.0 0.25 − − 50 75 5.0 25 − − 8.0 30 25 8.0 1.25 8.0 4.0 300 375 35 200 MHz hFE 35 50 75 35 100 50 30 40 − − − − VBE(sat) − 0.6 − − − − − − 300 − − − 0.4 0.3 1.6 1.0 1.3 1.2 2.6 2.0 Vdc − MMBT2222 MMBT2222 MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 30 40 60 75 5.0 6.0 − − − − − − − − − − − − − 10 0.01 0.01 10 10 100 20 Vdc Vdc Vdc nAdc mAdc Symbol Min Max Unit IEBO IBL nAdc nAdc MMBT2222A only MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A VCE(sat) Vdc Cobo Cibo pF pF hie kW hre X 10− 4 hfe − hoe mmhos http://onsemi.com 2 MMBT2222LT1G, MMBT2222ALT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic SMALL− SIGNAL CHARACTERISTICS Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz) SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE(off) = − 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf − − − − 10 25 225 60 ns MMBT2222A MMBT2222A rb, Cc NF − − 150 4.0 ps dB Symbol Min Max Unit ns 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 5. fT is defined as the frequency at which |hfe| extrapolates to unity. SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 -2 V 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% 1 kW < 2 ns 200 +16 V 0 CS* < 10 pF -14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 ms, DUTY CYCLE ≈ 2.0% + 30 V 200 -4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn−On Time Figure 2. Turn−Off Time 1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1 TJ = 125°C 25°C -55°C VCE = 1.0 V VCE = 10 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k Figure 3. DC Current Gain http://onsemi.com 3 MMBT2222LT1G, MMBT2222ALT1G VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region 200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 t′s = ts - 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C t, TIME (ns) tf Figure 5. Turn − On Time Figure 6. Turn − Off Time 10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 W 500 mA, RS = 200 W 100 mA, RS = 2.0 kW 50 mA, RS = 4.0 kW RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 mA 100 mA 500 mA 1.0 mA 6.0 6.0 4.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects http://onsemi.com 4 MMBT2222LT1G, MMBT2222ALT1G f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) 30 20 CAPACITANCE (pF) Ceb 10 7.0 5.0 Ccb 3.0 2.0 0.1 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 50 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 9. Capacitances 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 150°C 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Figure 10. Current−Gain Bandwidth Product IC/IB = 10 −55°C 25°C 150°C 0.1 −55°C 25°C 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 150°C 25°C −55°C COEFFICIENT (mV/ °C) VCE = 1 V 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 +0.5 Figure 12. Base Emitter Saturation Voltage vs. Collector Current RqVC for VCE(sat) RqVB for VBE 0.1 0.2 0.5 IC, COLLECTOR CURRENT (A) 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 13. Base Emitter Voltage vs. Collector Current Figure 14. Temperature Coefficients http://onsemi.com 5 MMBT2222LT1G, MMBT2222ALT1G 10 10 ms 1 Thermal Limit IC (A) 0.1 100 ms 1s 1 ms 0.01 Single Pulse Test @ TA = 25°C 0.01 0.1 1 VCE (Vdc) 10 100 0.001 Figure 15. Safe Operating Area ORDERING INFORMATION Device MMBT2222LT1G MMBT2222ALT1G MMBT2222LT3G MMBT2222ALT3G Specific Marking Code M1B 1P M1B 1P Package SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) SOT−23 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 10,000 / Tape & Reel 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MMBT2222LT1G, MMBT2222ALT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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