MMBT4401WT1G

MMBT4401WT1G Switching Transistor NPN Silicon Features  Moisture Sensitivity Level: 1  ESD Rating: Human Body Model; 4 kV, http://onsemi.com COLLECTOR 3 Machine Model; 400 V  These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 600 Unit Vdc Vdc Vdc mAdc 1 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- Board -5 TA = 25C Thermal Resistance, Junction- -Ambient -toJunction and Storage Temperature Symbol PD RθJA TJ, Tstg Max 150 833 - 55 to +150 Unit mW C/W C 2 SC- 70 (SOT- 323) CASE 419 STYLE 3 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2X MG G 1 (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT4401WT1G Package SC-70 (Pb-Free) Shipping† 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  Semiconductor Components Industries, LLC, 2010 October, 2010 - Rev. 2 1 Publication Order Number: MMBT4401WT1/D MMBT4401WT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector - Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base - Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Small - Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 15 20 225 30 ns fT Ccb Ceb hie hre hfe hoe 250 1.0 0.1 40 1.0 6.5 30 15 8.0 500 30 MHz pF pF kΩ X 10-- 4 mmhos hFE 20 40 80 100 40 0.75 300 Vdc 0.4 0.75 Vdc 0.95 1.2 0.1 mAdc V(BR)CEO V(BR)CBO V(BR)EBO IBEV 40 60 6.0 0.1 Vdc Vdc Vdc mAdc Symbol Min Max Unit VCE(sat) VBE(sat) ICEX ns 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V +16 V 0 - 2.0 V 1.0 to 100 ms, DUTY CYCLE  2.0% 1.0 kΩ 200 Ω +16 V 0 < 2.0 ns CS* < 10 pF 1.0 to 100 ms, DUTY CYCLE  2.0% 1.0 kΩ + 30 V 200 Ω - 14 V < 20 ns CS* < 10 pF - 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 2 MMBT4401WT1G TRANSIENT CHARACTERISTICS 25C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 3.0 2.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 Ccb 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 50 0.1 10 20 30 50 70 100 200 QA 300 500 100C VCC = 30 V IC/IB = 10 QT 20 30 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitances Figure 4. Charge Data 100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10 100 70 50 30 20 tf tr VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise and Fall Times 300 200 t s, STORAGE TIME (ns) ts = ts - 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns) 100 70 50 30 20 IC/IB = 10 IC/IB = 20 VCC = 30 V IB1 = IB2 100 70 50 10 7.0 30 10 20 30 50 70 100 200 300 500 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 3 MMBT4401WT1G SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 8.0 NF, NOISE FIGURE (dB) 6.0 IC = 1.0 mA, RS = 150 Ω IC = 500 mA, RS = 200 Ω IC = 100 mA, RS = 2.0 kΩ IC = 50 mA, RS = 4.0 kΩ RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) 6.0 IC = 50 mA IC = 100 mA IC = 500 mA IC = 1.0 mA 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 f, FREQUENCY (kHz) 4.0 2.0 0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k RS, SOURCE RESISTANCE (OHMS) 50 k 100 k Figure 9. Frequency Effects Figure 10. Source Resistance Effects h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between hfe and other “h” parameters for this series of transistors. To obtain these curves, a high- gain and a low- gain unit were selected from the MMBT4401WT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 300 hie , INPUT IMPEDANCE (OHMS) 200 hfe, CURRENT GAIN 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 100 70 50 30 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10- 4 ) 10 hoe , OUTPUT ADMITTANCE (m mhos) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 50 20 10 5.0 2.0 1.0 0.1 Figure 12. Input Impedance MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio http://onsemi.com 4 Figure 14. Output Admittance MMBT4401WT1G STATIC CHARACTERISTICS 3.0 h FE , NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 25C - 55C IC, COLLECTOR CURRENT (mA) Figure 15. DC Current Gain VCE, COLLECTOR-- EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.01 TJ = 25C IC = 1.0 mA 10 mA 100 mA 500 mA 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 16. Collector Saturation Region 1.0 TJ = 25C 0.8 VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) + 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 0.2 θVB for VBE 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 θVC for VCE(sat) 0.6 0.4 0.2 0 VBE @ VCE = 10 V VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500 Figure 17. “On” Voltages Figure 18. Temperature Coefficients http://onsemi.com 5 MMBT4401WT1G PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419--04 ISSUE N D e1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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