MMBT5401LT3G

MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −150 −160 −5.0 −500 Unit Vdc Vdc Vdc mAdc http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 2L M G G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C SOT−23 (TO−236) CASE 318 STYLE 6 2L = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT5401LT1G MMBT5401LT3G Package SOT−23 (Pb−Free) Shipping† 3000 Tape & Reel 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in 99.5% alumina. SOT−23 10,000 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 December, 2010 − Rev. 9 1 Publication Order Number: MMBT5401LT1/D MMBT5401LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCB = −120 Vdc, IE = 0) (VCB = −120 Vdc, IE = 0, TA = 100°C) V(BR)CEO V(BR)CBO V(BR)EBO ICES Vdc −150 −160 −5.0 − − − Vdc − Vdc − −50 −50 nAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = −1.0 mAdc, VCE = −5.0 Vdc) (IC = −10 mAdc, VCE = −5.0 Vdc) (IC = −50 mAdc, VCE = −5.0 Vdc) Collector − Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) Base − Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) hFE − 50 60 50 − − − − − 240 − Vdc −0.2 −0.5 Vdc −1.0 −1.0 VCE(sat) VBE(sat) SMALL− SIGNAL CHARACTERISTICS Current − Gain — Bandwidth Product (IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Small Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) Noise Figure (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz) fT Cobo hfe NF − 8.0 MHz 100 − 40 300 pF 6.0 − 200 dB http://onsemi.com 2 MMBT5401LT1G 200 150 TJ = 125°C h FE, CURRENT GAIN 100 70 50 - 55°C 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 VCE = - 1.0 V VCE = - 5.0 V 25°C Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT ( μA) 102 101 TJ = 125°C 100 10-1 10-2 10-3 0.3 75°C REVERSE 25°C FORWARD VCE = 30 V IC = ICES 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.6 0.7 Figure 3. Collector Cut−Off Region http://onsemi.com 3 MMBT5401LT1G 0.20 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) 0.18 0.15 0.13 150°C 0.10 0.08 0.05 −55°C 0.03 0 0.0001 0.001 0.01 25°C IC/IB = 10 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 150°C IC/IB = 10 −55°C 25°C 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.1 θV, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 150°C VCE = 10 V −55°C 25°C 2.5 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 0.1 Figure 5. Base Emitter Saturation Voltage vs. Collector Current TJ = - 55°C to 135°C qVC for VCE(sat) qVB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 IC, COLLECTOR CURRENT (A) Figure 6. Base Emitter Voltage vs. Collector Current 100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Figure 7. Temperature Coefficients TJ = 25°C VBB + 8.8 V 10.2 V Vin 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF 100 RB 5.1 k Vin 100 1N914 VCC -30 V 3.0 k RC Vout Cibo Cobo Values Shown are for IC @ 10 mA 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 Figure 8. Switching Time Test Circuit Figure 9. Capacitances http://onsemi.com 4 MMBT5401LT1G 1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 0.2 0.3 0.5 td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50 100 200 2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25°C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 10. Turn−On Time 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) IC, COLLECTOR CURRENT (A) VCE = 1 V TA = 25°C 1 Figure 11. Turn−Off Time 0.1 1 Sec 0.01 10 mSec 100 10 0.1 1 10 100 0.001 1 10 100 1000 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 5 MMBT5401LT1G PACKAGE DIMENSIONS SOT−23−3 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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