MMBT5551LT3G

MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage MMBT5550 MMBT5551 MMBT5550 MMBT5551 Symbol VCEO Value 140 160 160 180 6.0 600 > 8000 > 400 Unit Vdc Collector − Base Voltage VCBO Vdc 1 2 3 MARKING DIAGRAM Emitter − Base Voltage Collector Current − Continuous Electrostatic Discharge Human Body Model Machine Model VEBO IC ESD Vdc mAdc V SOT−23 (TO−236) CASE 318 STYLE 6 x1x M G G 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) @TA = 25°C Derate Above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 − 55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C RqJA PD x1x = Device Code M1F = MMBT5550LT G1 = MMBT5551LT M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. RqJA TJ, Tstg ORDERING INFORMATION Device MMBT5550LT1G MMBT5551LT1G MMBT5551LT3G Package Shipping† SOT−23 3,000 / Tape & Reel (Pb−Free) SOT−23 3,000 / Tape & Reel (Pb−Free) SOT−23 10,000/Tape & Reel (Pb−Free) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2010 September, 2010 − Rev. 9 1 Publication Order Number: MMBT5550LT1/D MMBT5550LT1G, MMBT5551LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base − Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Collector Emitter Cut−off (VCB = 10 V) (VCB = 75 V) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 Both Types MMBT5550 MMBT5551 Both Types MMBT5550 MMBT5551 Both Types hFE 60 80 60 80 20 30 − − − − − − − − − − 250 250 − − 0.15 0.25 0.20 1.0 1.2 1.0 50 100 − MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 V(BR)CEO 140 160 160 180 6.0 − − − − − − − − − − 100 50 100 50 50 Vdc Symbol Min Max Unit V(BR)CBO Vdc V(BR)EBO ICBO Vdc nAdc mAdc nAdc IEBO VCE(sat) Vdc VBE(sat) Vdc ICES nA http://onsemi.com 2 MMBT5550LT1G, MMBT5551LT1G 500 300 200 h FE, DC CURRENT GAIN 100 - 55°C 50 30 20 10 7.0 5.0 0.1 TJ = 125°C 25°C VCE = 1.0 V VCE = 5.0 V 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA Figure 2. Collector Saturation Region 101 VCE = 30 V IC, COLLECTOR CURRENT ( μA) 100 10-1 10-2 10-3 10-4 10-5 0.4 TJ = 125°C VCE(sat), Coll-Emitt Saturation Voltage (V) 0.30 IC/IB = 10 0.25 150°C 0.20 0.15 25°C 0.10 -55°C 0.05 0 0.0001 IC = ICES 75°C REVERSE 25°C FORWARD 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 3. Collector Cut−Off Region Figure 4. VCE(sat) http://onsemi.com 3 MMBT5550LT1G, MMBT5551LT1G 1.10 VBE(sat), Base-Emitt Saturation Voltage (V) 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 150°C 25°C IC/IB = 10 -55°C VBE(on), Base-Emitter Voltage (V) 1.10 1.00 0.90 0.80 0.70 0.60 0.50 0.40 0.30 0.20 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 150°C VCE = 10 V -55°C 25°C Figure 5. VBE(sat) 2.5 θV, TEMPERATURE COEFFICIENT (mV/ °C) 2.0 1.5 C, CAPACITANCE (pF) 1.0 0.5 0 - 0.5 - 1.0 - 1.5 - 2.0 - 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 qVB for VBE(sat) qVC for VCE(sat) TJ = - 55°C to +135°C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Figure 6. VBE(on) TJ = 25°C Cibo Cobo 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Temperature Coefficients Figure 8. Capacitances 10.2 V Vin 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% VBB - 8.8 V 100 0.25 mF RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout Values Shown are for IC @ 10 mA Figure 9. Switching Time Test Circuit http://onsemi.com 4 MMBT5550LT1G, MMBT5551LT1G 1000 fT, Current Gain Bandwidth Product (Mhz) IC, COLLECTOR CURRENT (A) VCE = 1 V TA = 25°C 100 1 10 mS 0.1 1.0 S 0.01 10 1 0.1 100 1.0 10 IC, COLLECTOR CURRENT (mA) 1000 0.001 1.0 100 10 VCE, COLLECTOR EMITTER VOLTAGE (V) 1000 Figure 10. Current Gain Bandwidth Product 100 70 50 30 C, CAPACITANCE (pF) t, TIME (ns) 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo Cobo 1000 TJ = 25°C 500 300 200 100 50 30 20 10 0.2 0.3 0.5 Figure 11. Safe Operating Area IC/IB = 10 TJ = 25°C tr @ VCC = 120 V tr @ VCC = 30 V td @ VEB(off) = 1.0 V VCC = 120 V 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 1.0 VR, REVERSE VOLTAGE (VOLTS) 20 30 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 200 Figure 12. Capacitances Figure 13. Turn−On Time http://onsemi.com 5 MMBT5550LT1G, MMBT5551LT1G PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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