MMBT6428LT1

MMBT6428LT1, MMBT6429LT1 Amplifier Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC 6428LT1 50 60 6.0 200 6429LT1 45 55 Unit Vdc Vdc Vdc mAdc 1 2 3 2 EMITTER Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. SOT−23 (TO−236) CASE 318 STYLE 6 MARKING DIAGRAM THERMAL CHARACTERISTICS Rating Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD Value 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C M xxx 1 xxx M = Specific Device Code MMBT6428LT1 − 1KM MMBT6429LT1 − 1L = Date Code 1. FR−5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. ORDERING INFORMATION Device MMBT6428LT1 MMBT6428LT1G MMBT6429LT1 MMBT6429LT1G Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) Shipping† 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 March, 2005 − Rev. 3 Publication Order Number: MMBT6428LT1/D MMBT6428LT1, MMBT6429LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO MMBT6428 MMBT6429 V(BR)CBO MMBT6428 MMBT6429 ICES − ICBO − IEBO − 0.01 0.01 mAdc 0.1 mAdc 60 55 − − mAdc 50 45 − − Vdc Vdc ON CHARACTERISTICS DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) hFE MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 VCE(sat) − − VBE(on) 0.56 0.66 0.2 0.6 Vdc 250 500 250 500 250 500 250 500 − − 650 1250 − − − − Vdc − (IC = 0.1 mAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) Base −Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc) SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT 100 Cobo − Cibo − 8.0 3.0 pF 700 pF MHz RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 MMBT6428LT1, MMBT6429LT1 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) NOISE VOLTAGE 30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA en , NOISE VOLTAGE (nV) RS ≈ 0 20 30 BANDWIDTH = 1.0 Hz RS ≈ 0 f = 10 Hz 100 Hz 10 kHz 5.0 10 7.0 5.0 10 7.0 1.0 kHz 300 mA 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 100 kHz 5.0 10 Figure 2. Effects of Frequency 10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 RS ≈ 0 10 20 10 mA 50 100 200 3.0 mA 1.0 mA 300 mA 100 mA 30 mA 0 10 20 20 16 NF, NOISE FIGURE (dB) Figure 3. Effects of Collector Current BANDWIDTH = 1.0 Hz IC = 10 mA BANDWIDTH = 10 Hz to 15.7 kHz 12 500 mA 100 mA 4.0 10 mA IC = 1.0 mA 8.0 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 4. Noise Current 100 Hz NOISE DATA 300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 mA 3.0 mA 1.0 mA 300 mA 30 mA 10 mA IC = 10 mA NF, NOISE FIGURE (dB) 16 12 8.0 Figure 5. Wideband Noise Figure IC = 10 mA 3.0 mA 1.0 mA 300 mA 100 mA 4.0 BANDWIDTH = 1.0 Hz 0 10 20 30 mA 10 mA 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 6. Total Noise Voltage Figure 7. Noise Figure http://onsemi.com 3 MMBT6428LT1, MMBT6429LT1 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125°C 25°C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 −55 °C 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 0.8 V, VOLTAGE (VOLTS) RθVBE, BASE−EMITTER TEMPERATURE COEFFICIENT (mV/ °C) TJ = 25°C −0.4 −0.8 0.6 VBE @ VCE = 5.0 V −1.2 TJ = 25°C to 125°C 0.4 −1.6 0.2 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 −2.0 −55 °C to 25°C 20 50 100 50 100 −2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 9. “On” Voltages BANDWIDTH PRODUCT (MHz) Figure 10. Temperature Coefficients 8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25°C 500 300 200 f T, CURRENT−GAIN 100 70 50 VCE = 5.0 V TJ = 25°C 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 11. Capacitance Figure 12. Current−Gain — Bandwidth Product http://onsemi.com 4 MMBT6428LT1, MMBT6429LT1 PACKAGE DIMENSIONS SOT−23 (TO236) CASE 318−18 ISSUE AK A L 3 1 2 BS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 V G C D H K J DIM A B C D G H J K L S V STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MMBT6428LT1, MMBT6429LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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