MMBV2105LT1G

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state reliability in replacement of mechanical tuning methods. Also available in a Surface Mount Package up to 33 pF. http://onsemi.com 6.8−100 pF, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES Features • • • • • High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance − 10% Complete Typical Design Curves Pb−Free Packages are Available 3 Cathode SOT−23 2 Cathode MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current IF 200 mAdc Forward Power Dissipation @ TA = 25°C MMBV21xx Derate above 25°C PD @ TA = 25°C Derate above 25°C 1 Anode TO−92 MARKING DIAGRAMS 3 1 MV21xx LV2209 225 1.8 mW mW/°C 280 2.8 mW mW/°C Junction Temperature TJ +150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 SOT−23 (TO−236) CASE 318−08 STYLE 8 Characteristic Symbol V(BR)R Typ Max Unit Vdc 30 25 − − − − IR − − 0.1 mAdc TCC − 280 − ppm/°C Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) Min xxx M G G 1 xxx = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Reverse Breakdown Voltage (IR = 10 mAdc) MMBV21xx, MV21xx LV2209 1 Anode 1 2 TO−92 (TO−226AC) CASE 182 STYLE 1 yy yyyy AYWW G G yyyyyy = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 4 1 Publication Order Number: MMBV2101LT1/D MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz TR, Tuning Ratio C2/C30 f = 1.0 MHz Marking Package Shipping † Min Nom Max Typ Min Typ Max MMBV2101LT1 M4G SOT−23 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2 MMBV2101LT1G M4G SOT−23 (Pb−Free) 3,000 / Tape & Reel 6.1 6.8 7.5 450 2.5 2.7 3.2 MMBV2101L M4G SOT−23 Bulk (Note 1) 6.1 6.8 7.5 450 2.5 2.7 3.2 MV2101 MV2101 TO−92 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2 MV2101G MV2101 TO−92 (Pb−Free) 1,000 per Box 6.1 6.8 7.5 450 2.5 2.7 3.2 MMBV2103LT1 4H SOT−23 3,000 / Tape & Reel 9.0 10 11 400 2.5 2.9 3.2 MMBV2105LT1 4U SOT−23 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2 MMBV2105LT1G 4U SOT−23 (Pb−Free) 3,000 / Tape & Reel 13.5 15 16.5 400 2.5 2.9 3.2 Device MMBV2105L 4U SOT−23 Bulk (Note 1) 13.5 15 16.5 400 2.5 2.9 3.2 MV2105 MV2105 TO−92 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2 MV2105G MV2105 TO−92 (Pb−Free) 1,000 per Box 13.5 15 16.5 400 2.5 2.9 3.2 MMBV2107LT1 4W SOT−23 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2 MMBV2107LT1G 4W SOT−23 (Pb−Free) 3,000 / Tape & Reel 19.8 22 24.2 350 2.5 2.9 3.2 MMBV2107L 4W SOT−23 Bulk (Note 1) 19.8 22 24.2 350 2.5 2.9 3.2 MMBV2108LT1 4X SOT−23 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2 MMBV2108LT1G 4X SOT−23 (Pb−Free) 3,000 / Tape & Reel 24.3 27 29.7 300 2.5 3.0 3.2 LV2209 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2 MMBV2109LT1 4J SOT−23 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2 MMBV2109LT1G 4J SOT−23 (Pb−Free) 3,000 / Tape & Reel 29.7 33 36.3 200 2.5 3.0 3.2 LV2209 MMBV2109L 4J SOT−23 Bulk (Note 1) 29.7 33 36.3 200 2.5 3.0 3.2 MV2109 MV2109 TO−92 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2 MV2109G MV2109 TO−92 (Pb−Free) 1,000 per Box 29.7 33 36.3 200 2.5 3.0 3.2 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. MMBV2101LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the “T1” suffix when ordering any of these devices in bulk. PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length [ 1/16″. (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT 2. TR, TUNING RATIO TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85°C in the following equation, which defines TCC: TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. 3. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: TCC + – CT(–65°C) 106 ŤCT() 85°C) Ť · 85 ) 65 C (25°C) T Accuracy limited by measurement of CT to ±0.1 pF. Q + 2pfC G http://onsemi.com 2 MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 TYPICAL DEVICE CHARACTERISTICS 1000 TA = 25°C f = 1.0 MHz C T , DIODE CAPACITANCE (pF) 500 200 100 MMBV2109LT1/MV2109 50 MMBV2105LT1/MV2105 20 MMBV2101LT1/MV2101 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 5.0 3.0 20 10 30 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 100 50 VR = 2.0 Vdc 1.030 I R , REVERSE CURRENT (nA) NORMALIZED DIODE CAPACITANCE 1.040 1.020 VR = 4.0 Vdc 1.010 1.000 VR = 30 Vdc 0.990 NORMALIZED TO CT at TA = 25°C VR = (CURVE) 0.980 0.970 0.960 −75 −50 −25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (°C) TA = 125°C 20 10 5.0 2.0 1.0 0.50 TA = 75°C 0.20 0.10 TA = 25°C 0.05 +100 0.02 0.01 +125 Figure 2. Normalized Diode Capacitance versus Junction Temperature MMBV2109LT1 500 300 200 100 50 30 20 10 1.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) 20 1000 30 300 200 100 10 10 30 MMBV2101LT1/MV2101 500 50 30 20 TA = 25°C f = 50 MHz 2.0 25 5000 3000 2000 MMBV2101LT1/MV2101 1000 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Reverse Current versus Reverse Bias Voltage Q, FIGURE OF MERIT Q, FIGURE OF MERIT 5000 3000 2000 5.0 0 Figure 4. Figure of Merit versus Reverse Voltage TA = 25°C VR = 4.0 Vdc 20 MMBV2109LT1/MV2109 30 50 70 100 f, FREQUENCY (MHz) 200 Figure 5. Figure of Merit versus Frequency http://onsemi.com 3 250 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 (TO−226) CASE 182−06 ISSUE L DATE 04/18/1998 SCALE 1:1 A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R SEATING PLANE D ÉÉ ÉÉ L P J K D DIM A B C D G H J K L N P R V SECTION X−X X X G H V 1 C INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --0.250 --0.080 0.105 --0.050 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --6.35 --2.03 2.66 --1.27 2.93 --3.43 --- N 2 N STYLE 1: PIN 1. ANODE 2. CATHODE DOCUMENT NUMBER: DESCRIPTION: STYLE 2: PIN 1. CATHODE 2. ANODE 98ASB42118B TO−92 (TO−226) STYLE 3: PIN 1. MAIN TERMINAL 1 2. MAIN TERMINAL 2 STYLE 4: CANCELLED STYLE 5: PIN 1. INPUT 2. OUTPUT Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AS DATE 30 JAN 2018 SCALE 4:1 D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW SEE VIEW C c MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° GENERIC MARKING DIAGRAM* END VIEW RECOMMENDED SOLDERING FOOTPRINT XXXMG G 1 3X 2.90 3X XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.90 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS STYLE 1 THRU 5: CANCELLED STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 9: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 10: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 11: STYLE 12: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. CATHODE 3. CATHODE−ANODE 3. ANODE STYLE 15: PIN 1. GATE 2. CATHODE 3. ANODE STYLE 16: PIN 1. ANODE 2. CATHODE 3. CATHODE STYLE 17: PIN 1. NO CONNECTION 2. ANODE 3. CATHODE STYLE 18: STYLE 19: STYLE 20: PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE 2. CATHODE 2. ANODE 2. ANODE 3. GATE 3. ANODE 3. CATHODE−ANODE STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN STYLE 22: PIN 1. RETURN 2. OUTPUT 3. INPUT STYLE 23: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 24: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE STYLE 28: PIN 1. ANODE 2. ANODE 3. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42226B SOT−23 (TO−236) STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE STYLE 13: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 25: PIN 1. ANODE 2. CATHODE 3. GATE STYLE 14: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 26: PIN 1. CATHODE 2. ANODE 3. NO CONNECTION Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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