MMVL2101T1G

MMVL2101T1 Preferred Device Silicon Tuning Diode These devices are designed in the popular Plastic Surface Mount Package for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state reliability in replacement of mechanical tuning methods. Features http://onsemi.com • • • • • High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance − 10% Complete Typical Design Curves Pb−Free Package is Available 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE 1 CATHODE 2 ANODE MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Symbol VR IF Value 30 200 Unit Vdc mAdc 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD 200 1.57 RqJA TJ, Tstg 635 150 mW mW/°C °C/W °C Max Unit PLASTIC SOD−323 CASE 477 STYLE 1 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 Minimum Pad 4G M G G 4G = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMVL2101T1 MMVL2101T1G Package Shipping † SOD−323 3000 / Tape & Reel SOD−323 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 2 Publication Order Number: MMVL2101T1/D MMVL2101T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Reverse Voltage Leakage Current (VR = 25 Vdc, TA = 25°C) Diode Capacitance Temperature Coefficient (VR = 4.0 Vdc, f = 1.0 MHz) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMVL2101T1 Min 6.1 Nom 6.8 Max 7.5 Symbol V(BR)R IR TCC Min 30 − − Typ − − 280 Max − 0.1 − Unit Vdc mAdc ppm/°C Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT (CT = CC + CJ). CT is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 2. TR, TUNING RATIO TR is the ratio of CT measured at 2.0 Vdc divided by CT measured at 30 Vdc. 3. Q, FIGURE OF MERIT TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = −65°C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85°C in the following equation, which defines TCC: TCC + CT() 85°C) – CT(–65°C) 106 · 85 ) 65 CT(25°C) Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q + 2pfC G Accuracy limited by measurement of CT to ± 0.1 pF. (Boonton Electronics Model 33AS8 or equivalent). Use Lead Length [ 1/16”. http://onsemi.com 2 MMVL2101T1 TYPICAL DEVICE CHARACTERISTICS 1000 500 C T , DIODE CAPACITANCE (pF) 200 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 TA = 25°C f = 1.0 MHz VR, REVERSE VOLTAGE (VOLTS) Figure 1. Diode Capacitance versus Reverse Voltage 1.040 NORMALIZED DIODE CAPACITANCE I R , REVERSE CURRENT (nA) 1.030 1.020 1.010 1.000 0.990 0.980 0.970 0.960 −75 −50 NORMALIZED TO CT at TA = 25°C VR = (CURVE) −25 0 +25 +50 +75 TJ, JUNCTION TEMPERATURE (°C) +100 +125 VR = 4.0 Vdc VR = 30 Vdc VR = 2.0 Vdc 100 50 20 10 5.0 2.0 1.0 0.50 0.20 0.10 0.05 0.02 0.01 TA = 75°C TA = 125°C TA = 25°C 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 30 Figure 2. Normalized Diode Capacitance versus Junction Temperature 5000 3000 2000 Q, FIGURE OF MERIT Q, FIGURE OF MERIT 1000 500 300 200 100 50 30 20 10 1.0 2.0 10 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) TA = 25°C f = 50 MHz 20 30 5000 3000 2000 1000 500 300 200 100 50 30 20 10 10 Figure 3. Reverse Current versus Reverse Bias Voltage TA = 25°C VR = 4.0 Vdc 20 30 50 70 100 f, FREQUENCY (MHz) 200 250 Figure 4. Figure of Merit versus Reverse Voltage Figure 5. Figure of Merit versus Frequency http://onsemi.com 3 MMVL2101T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G HE D b 1 2 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 STYLE 1: PIN 1. CATHODE 2. ANODE INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 A3 A L NOTE 5 MIN 0.031 0.000 C NOTE 3 A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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