MPS2907AG

MPS2907A Series General Purpose Transistors PNP Silicon Features http://onsemi.com COLLECTOR 3 2 BASE Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value −60 −60 −5.0 −600 625 5.0 1.5 12 −55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C TO−92 CASE 29 STYLE 1 12 1 2 1 EMITTER • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W 3 STRAIGHT LEAD BULK PACK 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM MPSx x907x YWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. DEVICE MARKING Device MPS2907AG MPS2907ARLG MPS2907ARLRAG MPS2907ARLRPG Line 1 MPS MPS2 MPS MPS Line 2 2907A 907A 2907 2907 Y WW G = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 June, 2010 − Rev. 5 1 Publication Order Number: MPS2907A/D MPS2907A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −10 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) Collector Cutoff Current (VCB = −50 Vdc, IE = 0) (VCB = −50 Vdc, IE = 0, TA = 150°C) Base Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ON CHARACTERISTICS DC Current Gain (IC = −0.1 mAdc, VCE = −10 Vdc) (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −150 mAdc, VCE = −10 Vdc) (Note 1) (IC = −500 mAdc, VCE = −10 Vdc) (Note 1) Collector − Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) Base − Emitter Saturation Voltage (Note 1) (IC = −150 mAdc, IB = −15 mAdc) (IC = −500 mAdc, IB = −50 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (Notes 1 and 2), (IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS Turn−On Time Delay Time Rise Time Turn−Off Time Storage Time Fall Time 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. (VCC = −6.0 Vdc, IC = −150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) (VCC = −30 Vdc, IC = −150 mAdc, IB1 = −15 mAdc) (Figures 1 and 5) ton td tr toff ts tf − − − − − − 45 10 40 100 80 30 ns ns ns ns ns ns fT Cobo Cibo 200 − − − 8.0 30 MHz pF pF hFE 75 100 100 100 50 − − − − − − − 300 − −0.4 −1.6 −1.3 −2.6 − V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO −60 −60 −5.0 − − − − − − − −50 −0.01 −10 −50 Vdc Vdc Vdc nAdc mAdc Symbol Min Max Unit IB nAdc VCE(sat) Vdc VBE(sat) Vdc http://onsemi.com 2 MPS2907A Series INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 -16 V 200 ns 50 1.0 k INPUT Zo = 50 W PRF = 150 PPS RISE TIME ≤ 2.0 ns P.W. < 200 ns 0 -30 V 200 ns +15 V -6.0 V 37 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns 1N916 -30 V 200 1.0 k 1.0 k 50 TO OSCILLOSCOPE RISE TIME ≤ 5.0 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit TYPICAL CHARACTERISTICS 3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = -1.0 V VCE = -10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 -0.1 - 55°C -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 3. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -1.0 -0.8 IC = -1.0 mA -0.6 -10 mA -100 mA -500 mA -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 Figure 4. Collector Saturation Region -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 http://onsemi.com 3 MPS2907A Series ORDERING INFORMATION Device MPS2907AG MPS2907ARLG MPS2907ARLRAG MPS2907ARLRPG Package TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) Shipping† 5000 Units / Bulk 2000 / Tape & Reel 2000 / Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT tr VCC = -30 V IC/IB = 10 TJ = 25°C t, TIME (ns) 2.0 V -200 -300 -500 Figure 5. Turn−On Time 500 300 200 tf t, TIME (ns) 100 70 50 30 20 10 7.0 5.0 -5.0 -7.0 -10 t′s = ts - 1/8 tf VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25°C -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn−Off Time http://onsemi.com 4 MPS2907A Series TYPICAL SMALL− SIGNAL CHARACTERISTICS NOISE FIGURE VCE = 10 Vdc, TA = 25°C 10 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 W -500 mA, Rs = 560 W -50 mA, Rs = 2.7 kW -100 mA, Rs = 1.6 kW Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0 6.0 6.0 4.0 4.0 IC = -50 mA -100 mA -500 mA -1.0 mA 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k f, FREQUENCY (kHz) Figure 7. Frequency Effects f T, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 8. Source Resistance Effects Rs, SOURCE RESISTANCE (OHMS) 30 20 C, CAPACITANCE (pF) Ceb 400 300 200 10 7.0 5.0 3.0 2.0 -0.1 Ccb 100 80 60 40 30 20 -1.0 -2.0 VCE = -20 V TJ = 25°C -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current−Gain — Bandwidth Product -1.0 TJ = 25°C -0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ ° C) VBE(on) @ VCE = -10 V +0.5 0 RqVC for VCE(sat) -0.5 -1.0 -1.5 -2.0 VCE(sat) @ IC/IB = 10 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 RqVB for VBE -0.6 -0.4 -0.2 0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 11. “On” Voltage Figure 12. Temperature Coefficients http://onsemi.com 5 MPS2907A Series PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A R P L SEATING PLANE B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX H V 1 D G J C N N SECTION X−X DIM A B C D G H J K L N P R V R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K G XX V 1 D J C N SECTION X−X DIM A B C D G J K N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 MPS2907A/D