MPSA92RLRAG

MPSA92, MPSA93 High Voltage Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector − Emitter Voltage MPSA93 MPSA92 Collector − Base Voltage MPSA93 MPSA92 Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO Value −200 −300 −200 −300 −5.0 −500 625 5.0 1.5 12 − 55 to +150 Unit Vdc http://onsemi.com VCBO Vdc 3 STRAIGHT LEAD BULK PACK 12 1 3 BENT LEAD TAPE & REEL AMMO PACK 2 TO−92 (TO−226AA) CASE 29−11 VEBO IC PD Vdc mAdc mW mW/°C W mW/°C °C COLLECTOR 3 2 BASE 1 EMITTER MARKING DIAGRAM MPS A9x AYWWG G PD TJ, Tstg THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W x = 2 or 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 6 1 Publication Order Number: MPSA92/D MPSA92, MPSA93 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (Note 1) (IC = −1.0 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −100 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −100 mAdc, IC = 0) Collector Cutoff Current (VCB = −200 Vdc, IE = 0) (VCB = −160 Vdc, IE = 0) Emitter Cutoff Current (VEB = −3.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc) (IC = −10 mAdc, VCE = −10 Vdc) (IC = −30 mAdc, VCE = −10 Vdc) Collector − Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) Base−Emitter Saturation Voltage (IC = −20 mAdc, IB = −2.0 mAdc) SMALL− SIGNAL CHARACTERISTICS Current − Gain − Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) Collector−Base Capacitance (VCB = −20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. MPSA92 MPSA93 fT Ccb 50 − MHz pF All Types All Types MPSA92 MPSA93 MPSA92 MPSA93 VCE(sat) hFE 25 40 25 25 − − − − Vdc − MPSA92 MPSA93 MPSA92 MPSA93 MPSA92 MPSA93 V(BR)CEO −300 −200 −300 −200 −5.0 − − − − − Vdc Symbol Min Max Unit V(BR)CBO Vdc V(BR)EBO ICBO Vdc mAdc − − − −0.25 −0.25 −0.1 IEBO mAdc − − − −0.5 −0.4 −0.9 VBE(sat) Vdc − − 6.0 8.0 http://onsemi.com 2 MPSA92, MPSA93 ORDERING INFORMATION Device MPSA92G MPSA92RL1G MPSA92RLRA MPSA92RLRAG MPSA92RLRMG MPSA92RLRPG MPSA92ZL1G MPSA93G MPSA93RLRMG Package TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) TO−92 (Pb−Free) Shipping† 5000 Units / Box 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Tape & Reel 2000 / Ammo Pack 2000 / Ammo Pack 2000 / Ammo Pack 5000 Units / Box 2000 / Ammo Pack †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 250 hFE , DC CURRENT GAIN 200 25°C 150 100 50 0 0.1 1.0 IC, COLLECTOR CURRENT (mA) 10 100 -55°C TJ = +125°C VCE = 10 Vdc Figure 1. DC Current Gain http://onsemi.com 3 MPSA92, MPSA93 100 Cib @ 1MHz f T, CURRENT-GAIN — BANDWIDTH (MHz) 150 130 110 90 70 50 30 10 1 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) TJ = 25°C VCE = 20 Vdc F = 20 MHz 17 19 21 C, CAPACITANCE (pF) 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 1000 Figure 2. Capacitance Figure 3. Current−Gain − Bandwidth 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ −55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ −55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ −55°C, VCE = 10 V Figure 4. ”ON” Voltages 1 IC, COLLECTOR CURRENT (A) 0.1 1.0 s 10 ms 0.01 0.001 1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 5. Safe Operating Area http://onsemi.com 4 MPSA92, MPSA93 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 029−11 ISSUE AM A R P L SEATING PLANE B STRAIGHT LEAD BULK PACK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- K XX H V 1 D G J C N N SECTION X−X DIM A B C D G H J K L N P R V STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- K G XX V 1 D J C N SECTION X−X DIM A B C D G J K N P R V ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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