MURH840CT_08

MURH840CT MEGAHERTZ™ Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 8 A Total (4 A Per Diode Leg) Pb−Free Package is Available http://onsemi.com ULTRAFAST RECTIFIER 8.0 AMPERES, 400 VOLTS trr = 28 ns 1 2, 4 3 4 Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C TO−220AB CASE 221A PLASTIC 1 2 3 MARKING DIAGRAM AYWW UH840G AKA A = Assembly Location Y = Year WW = Work Week UH840 = Device Code G = Pb−Free Package AKA = Diode Polarity ORDERING INFORMATION Device MURH840CT MURH840CTG Package TO−220 TO−220 (Pb−Free) Shipping 50 Units/Rail 50 Units/Rail © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. 5 1 Publication Order Number: MURH840CT/D MURH840CT MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 155°C) Per Leg Total Device Peak Repetitive Forward Current per Diode Leg (Square Wave, 20 kHz, TC = 149°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Controlled Avalanche Energy Operating Junction and Storage Temperature Range Symbol VRRM VRWM VR IF(AV) Value 400 Unit V 4.0 8.0 8.0 100 20 −65 to +175 A IFM IFSM WAVAL TJ, Tstg A A mJ °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance, Junction−to−Case Maximum Thermal Resistance, Junction−to−Ambient Conditions Min. Pad Min. Pad Symbol RqJC RqJA Max 3.0 60 Unit °C/W ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 4.0 A, Tj = 150°C) (iF = 4.0 A, Tj = 25°C) Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, Tj = 150°C) (Rated dc Voltage, Tj = 25°C) Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 100 175°C 100°C 100 175°C 100°C Symbol vF Min − − − − − Typical 1.12 1.45 300 4.0 − Max 1.9 2.2 500 10 28 Unit V iR mA trr ns IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 150°C 10 25°C 150°C 10 25°C 1.0 1.0 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 3.2 0.1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 MURH840CT I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 1000 500 IR, REVERSE CURRENT ( μA) 200 100 50 20 10 5 2 1 0.5 0.2 0.1 TJ = 150°C 100°C 8.0 7.0 6.0 5.0 4.0 SQUARE WAVE 3.0 2.0 DC RqJA = 16°C/W DC 25°C 0 50 100 150 200 250 300 350 400 VR, REVERSE VOLTAGE (VOLTS) 1.0 SQUARE WAVE RqJA = 60°C/W, NO HEATSINK 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (°C) 150 175 Figure 3. Typical Reverse Current, Per Leg 8.0 IF(AV), AVERAGE FORWARD CURRENT (A) DC Figure 4. Forward Current Derating, Ambient, Per Leg 1000 C, CAPACITANCE (pF) 6.0 100 4.0 SQUARE WAVE 10 2.0 0 120 130 140 150 160 TC, CASE TEMPERATURE (°C) 170 180 1 0.01 0.1 1 10 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 5. Current Derating, Case, Per Leg Figure 6. Typical Capacitance, Per Leg PF(AV) , AVERAGE POWER DISSIPATION (WATTS) 60 56 52 48 44 40 36 32 28 24 20 16 12 8.0 4.0 0 TJ = 175°C SQUARE WAVE DC 0 2.0 4.0 6.0 8.0 10 12 14 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 16 Figure 7. Power Dissipation, Per Leg http://onsemi.com 3 MURH840CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 −T− B 4 SEATING PLANE F T C S Q 123 A U K H Z L V G D N R J STYLE 6: PIN 1. 2. 3. 4. MEGAHERTZ is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 4 MURH840CT/D