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NCL30167DR2G

NCL30167DR2G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOP10

  • 描述:

    IC LED REG BOOST CTLR 10SOIC

  • 数据手册
  • 价格&库存
NCL30167DR2G 数据手册
NCL30167 Power Factor Corrected LED Boost Switching Regulator The NCL30167 high power factor boost PWM switching regulator is designed to regulate the average current through a string of LEDs. The circuit operates in Critical Conduction Mode (CrM) based on a proven constant on-time control scheme to achieve near unity power factor. In addition to regulating a constant current, the switching regulator is optimized to support leading and trailing edge phase dimming applications. When a dimmer is detected on the AC input, an internal voltage reference of the current regulation loop adjusts the current level based on the dimmer conduction angle so the current through the LED string has a desired value based on a programmed dimming curve. The shape of the dimming curve is intended to emulate the response of an incandescent bulb while achieving NEMA SSL6 and NEMA SSL7A recommendations. A cascoded configuration supports biasing the controller during operation and eliminates the need for an auxiliary winding to provide bias power. A robust suite of protection features are included to ensure proper handling of expected fault conditions without the need for extra circuitry and a dedicated thermal fold-back input proves gradually reduction of the current above a user defined set-point. Features • • • • • • • • • • Near-Unity Power Factor Critical Conduction Mode (CrM) Constant On-time Control Accurate Current Regulation (±2% Typical) Compatible with Leading and Trailing Edge Phase Controlled Dimmers Fast Startup Time (< 100 ms Typical) Integrated ZCD Detection User Programmable Thermal Current Fold-back VCC Operation up to 20 V This Device is Pb-Free and is RoHS Compliant • Output Overvoltage Protection • Cycle-by-Cycle Current Limiting • VCC UVLO LED Bulbs LED Downlights LED Light Engines LED Modules December, 2016 − Rev. 0 1 SOIC−10 CASE 751BQ MARKING DIAGRAM 10 L30167 ALYWX G 1 L30167 A L Y W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS 1 10 NC ACC_TH TF COMP OVP DRV CS2 CS1 GND VCC 5 (Top View) 6 Device Package Shipping† NCL30167DR2G SOIC−10 (Pb-Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Typical Applications © Semiconductor Components Industries, LLC, 2016 10 ORDERING INFORMATION Safety Features • • • • www.onsemi.com 1 Publication Order Number: NCL30167/D NCL30167 TYPICAL APPLICATION EXAMPLE C9 LED6 LED5 LED4 LED3 LED2 LED1 + R17 R18 R14 R15 R12 R13 C8 R16 D2 D3 R11 D4 D1 C3 NTC C5 C4 L2 C6 NCL30167 CS1 GND VCC DRV CS2 OVP TF ACC_TH IC1 NC COMP C7 M1 R10 R8 R7 C1 C2 R9 R3 R4 F1 L1 R2 B1 R5 R6 R1 N L Figure 1. NCL30167 Application Schematic www.onsemi.com 2 NCL30167 PIN FUNCTION DESCRIPTION Table 1. PIN FUNCTION DESCRIPTION Pin Number Pin Name 1 ACC_TH 2 TF 3 Function Description Dimming Detection Input This pin receives a portion of the AC input voltage. It is compared to an internal reference voltage in order to determine the presence of a dimmer state and the phase angle. Thermal Fold-back Connecting an NTC to this pin allows linear reduction of the output current above a user programmed temperature set-point. OVP Over Voltage Protection Input This pin receives a portion of the Boost output voltage VOUT and serves to trigger an OVP fault in the event the LED string is open. 4 CS2 2nd Current Sense Input This pin monitors the LED load current across the Rsense2 resistor during the off time. This pin is used to monitor the instantaneous load current for regulation loop, and to determine when the Zero Current Detection (ZCD) point is reached. 5 VCC VCC Input This positive supply pin accepts up to 20 Vdc. The supply for the device is ensured by the external diode from the source pin. 6 GND − The switching regulator ground 7 CS1 1st Current Sense Input This pin monitors the inductor current across the Rsense1 resistor during the on-time. This pin monitors the maximum current cycle by cycle. 8 DRV Drive for HV Switch The Driving Pin for Source of the External High Voltage NMOS. Connect the external diode between the source and VCC pin to provide the IC supply. 9 COMP Compensation Feedback loop compensation pin of the IC. 10 NC Not Connected www.onsemi.com 3 NCL30167 SIMPLIFIED INTERNAL BLOCK SCHEMATIC Iovp(bias) Vdd OVP_CMP LV MOS Set Q CS1 DRV IC stop Reset Qb ILIM_MIN 1.0 V OCP_RST Ilimit_CMP TSD TSD WindShort 1.0 V CS1 Fault Ilimit_MIN_CMP CS2 Fault LEB 250 ns DRV VccON 12 V ON_CMP VccON Vdd Latch Fault Management 8.8 V VccOFF IC Stop Vdd LEB 120 ns 1.5 V Iton DRVb VCS1stop WindShort 4 events timer Cton DRV CS1 0.350 V CSstop_CMP 5V VccRESET RESET VILIM_MIN PowerOnReset_CMP DRV Vuvp RST PWM UVLO_CMP UVLO Vdd reg CLK Latch UVP_CMP UVPstop VCC SOURCE Vdd VILIM OVP OVP 3.0 V Vovp 20 ms Filter RST_CMP PWM COMP EA_OTA IC stop Vref(tf ) = Ktf*Vref Gm DIM_CMP DIM DIMb CA input Multiplier Output Vref Vref Processing Vdd 1.0 V Q Set 60 ms watch−dog timer DRV DRVb Qb Reset Q CS2fault Set Figure 2. Simplified Internal Block Schematic www.onsemi.com DRVb CS2 GND CS2open_CMP Reset 4 50 mV VCS2stop OA ZCD_CMP 4.5 V TF Vtf(start) CS2short Itf Vdd DRVb Clock ZCD generator Vzcd CLK Analog Pass 1 mA 0.45 V VACC_TH ACC_TH NCL30167 Table 2. MAXIMUM RATINGS Symbol Pin DRV 8 Value Unit External NMOS Source Driving Pin Continuous Current RθJ−C Steady State, TC = 25 °C (Note 1) RθJ−C Steady State, TC = 100°C (Note 1) Peak Current Rating −0.3 to 20 V 0.5 0.25 −0.01/1.7 A A A VCC 5 VCC Power Supply Voltage, VCC Pin, Continuous Voltage Power Supply Voltage, VCC Pin, Continuous Voltage (Note 2) –0.3 to 20 ±30 (Peak) V mA CS1 7 Maximum Voltage Continuous Current –0.3 to 5.5 −1.7/0.01 V A Vmax Maximum Voltage on Low Power Pins (except pins 5, 7, 8) Maximum Peak Current to Low Power Pins – 0.3 to 9 ±10 V mA RθJ−A Thermal Resistance Junction-to-Air 180 °C/W TJMAX Operating Junction Temperature −40 to +125 °C Storage Temperature Range −60 to +150 °C 300 °C 3 − ESD Capability, HBM model (Note 2) 3.5 kV ESD Capability, Machine Model (Note 2) 250 V 1 kV TSTRGMAX TLmax Lead Temperature (Soldering, 10 s) MSL Moisture Sensitivity Level ESD Capability, CDM model (Note 2) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by the junction temperature. 2. This device contains ESD protection and exceeds the following tests: Human Body Model 3500 V per JEDEC Standard JESD22−A114E, Machine Model Method 250 V per JEDEC Standard JESD22−A115B, Charged Device Model 1000 V per JEDEC Standard JESD22−C101E. 3. This device contains Latch-up protection and has been tested per JEDEC JESD78D, Class I and exceeds ±100 mA. Table 3. ELECTRICAL CHARACTERISTICS (For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, VCC = 13 V unless otherwise noted) Characteristics Test Conditions Symbol Min Typ Max Unit SUPPLY Turn-on Threshold Level VCC Going Up VCC(on) 11.0 12.0 13.0 V Minimum Operating Voltage, Turn-off Threshold VCC Going Down VCC(off) 8.2 8.8 9.4 V Hysteresis VCC(on) − VCC(off) VCC(hyst) 2.8 − − V VCC Decreasing Level at which the Internal Logic Resets VCC(reset) 4.0 5.0 6.0 V tVCC(off) − 10 − ms Blanking Duration on VCC(off) tVCC(reset) − 10 − ms Internal Current Consumption of Device before Start-up VCC = 10 V ICC1 − 10 100 mA Internal Current Consumption, when DRV Pin is Switching fSW = 65 kHz ICC2 − 1.0 1.5 mA Internal Current Consumption, when DRV Pin is Turned-on VCS1 < 0.3 V ICC3 − 0.9 1.1 mA Blanking Duration on VCC(reset) www.onsemi.com 5 NCL30167 Table 3. ELECTRICAL CHARACTERISTICS (continued) (For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, VCC = 13 V unless otherwise noted) Characteristics Test Conditions Symbol Min Typ Max Unit VOVP(off) VOVP(on) 2.9 2.6 3.0 2.7 3.1 2.8 V VOVP(hyst) − 300 − mV tOVP 23 33 43 ms OUTPUT OVER VOLTAGE PROTECTION Over Voltage Protection Thresholds VOVP Going Up VOVP Going Down Over Voltage Protection Hysteresis Timer Duration for Over Voltage Detection Internal OVP Pin Pull-up Current IOVP(bias) 50 250 450 nA Under Voltage Detect Threshold VUVP 0.4 0.5 0.6 V Under Voltage Detect Propagation Delay tUVP 23 33 43 ms mS LED CURRENT REGULATION LOOP Error Amplifier Trans-conductance GEA 85 100 115 Error Amplifier Current Capability IEA ±13 ±25 − mA VEAIO −20 − 20 mV Error Amplifier Input Offset Tj = 25°C Maximum Control Voltage VCS2 < 0.5 V VCOMP(max) 4.2 − − V Minimum Control Voltage VCS2 > 1.5 V VCOMP(min) − − 0.7 V RCOMP(dis) − 200 − W COMP Pin Discharge Resistance CURRENT SENSE 1 − INDUCTOR OVER CURRENT LIMITATION Maximum Internal Current Set-point VCOMP > 4 V VILIM 0.95 1.00 1.05 V Propagation Delay from VIlimit Detection to Switch Off VCS1 > 1.2 V tdelay − 50 90 ns Minimum Internal Current Set-point (Dimming is Detected) VCOMP < 0.7 V VILIM_MIN 300 350 400 mV Propagation Delay from Reduced VIlimit Detection to DRV Off VCS1 > 1.2 V tdelay_DIM − 50 90 ns Leading Edge Blanking Duration for VILIM tLEB 220 320 420 ns Threshold for Winding Short Fault Protection Activation VCS1(stop) 1.42 1.50 1.58 V Leading Edge Blanking Duration for VCS(stop) (Note 1) tBCS 90 120 150 ns CURRENT SENSE 2 − ZERO CURRENT DETECTION AND LED REGULATION INPUT Input Pull-up Current VCS2 = 0.7 V ICS2(bias) − 1 − mA VREF 233 250 267 mV Internal Reference for Nominal LED Current Lower ZCD Threshold VCS2 Falling VZCD(falling) 15 50 80 mV Upper ZCD Threshold VCS2 Rising VZCD(rising) 30 65 95 mV ZCD Comparator Hysteresis Propagation Delay from ZCD to Turn-on Internal Switch VZCD(hyst) − 15 − mV tDEM 400 500 600 ns VCS2(stop) 4.0 4.5 5.0 V tZCD(blank) 200 300 400 ns tZCD(timeout) 20 32 45 ms VCS2 Falling Current Sense Threshold for CS2 Pin Open Protection Blanking duration for ZCD Detection ZCD Timeout www.onsemi.com 6 NCL30167 Table 3. ELECTRICAL CHARACTERISTICS (continued) (For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, VCC = 13 V unless otherwise noted) Characteristics Test Conditions Symbol Min Typ Max Unit VACCTH_H VACCTH_L 0.400 0.300 0.450 0.350 0.500 0.400 V DIMMING DETECTION Dimming Detection Comparator Thresholds VACCTH Going Up VACCTH Going Down Dimming Detection Comparator Hysteresis VACCTH_Hyst − 100 − mV VACCTH = VACCTH_H + 0.1 V tDIM_D 40 70 90 ms Maximum On Time VCOMP = 4.2 V tONmax 15 18 22 ms On Time VCOMP = 2.5 V tON 8.0 9.5 11.0 ms Minimum On Time VCOMP = 0.7 V tONmin − 0.6 1.2 ms TF Pin Voltage at which Thermal Fold-back Starts (VREF is Decreased) VTF(start) 0.94 1.00 1.06 V TF Pin Voltage at which Thermal Fold-back Reduces VREF to 10% VREF VTF(10%) 0.45 0.5 0.55 V Dimming Detection Comparator Delay ON-TIME GENERATOR THERMAL FOLDBACK Current Source for Direct NTC Connection VTF = 0 V Blanking Duration for TF Detection after Start-up VTF < VTF(5%) ITF 80 85 90 mA tTF(blank) 250 300 350 ms TTSD 135 150 165 °C INTERNAL TEMPERATURE SHUTDOWN Temperature Shutdown (Note 1) TJ Going Up Temperature Shutdown Hysteresis (Note 1) TJ Going Down TTSD(HYS) − 30 − °C IDRV = 500 mA, Tj = 25°C RL,DS,on − 3.5 4.5 W VL,DS,max 30 − − V INTERNAL DRIVING SWITCH On State Resistance of the Driving NMOS Maximum Drain to Source Voltage of the Driving NMOS (Note 1) Maximum Off State Leakage Current VDRAIN = 19 V IDSS − − 5 mA Turn-on Time, 90 to 10 % of VDRV IDRV = 500 mA ton − 10 − ns Turn-off Time, 10 to 90 % of VDRV IDRV = 500 mA toff − 30 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Guaranteed by design. www.onsemi.com 7 NCL30167 TYPICAL CHARACTERISTIC 9.5 13.0 VCC(off) (V) VCC(on) (V) 12.5 12.0 11.5 9.0 8.5 11.0 10.5 8.0 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 −25 −10 5 Temperature (5C) 20 35 50 65 80 95 110 125 Temperature (5C) Figure 3. Turn-On Threshold Level, VCC(on) Figure 4. Minimum Operating Voltage, VCC(off) 15.0 5.5 5.0 ICC1 (mA) VCC(reset) (V) 13.0 4.5 11.0 9.0 7.0 4.0 5.0 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 −25 −10 5 Temperature (5C) Figure 5. VCC Decreasing Level at which the Internal Logic Resets, VCC(reset) 35 50 65 80 95 110 125 Figure 6. Internal Current Consumption before Start-Up, ICC1 1.3 1.3 1.1 1.1 ICC3 (mA) ICC2 (mA) 20 Temperature (5C) 0.9 0.7 0.9 0.7 0.5 0.5 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 Temperature (5C) −25 −10 5 20 35 50 65 80 95 110 125 Temperature (5C) Figure 7. Internal Current Consumption when DRV Pin is Switching, ICC2 Figure 8. Internal Current Consumption when DRV Pin is Turned-On, ICC3 www.onsemi.com 8 NCL30167 4.0 4.0 3.5 3.5 VOVP(on) (V) VOVP(off) (V) TYPICAL CHARACTERISTIC 3.0 2.5 3.0 2.5 2.0 2.0 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 −25 −10 5 Temperature (5C) Figure 9. Over-Voltage Protection Threshold (VOVP Going Up), VOVP(off) 35 50 65 80 95 110 125 Figure 10. Over-Voltage Protection Threshold (VOVP Going Down), VOVP(on) 300 1.0 280 0.8 VUVP (V) IOVP(bias) (nA) 20 Temperature (5C) 260 240 220 0.6 0.4 0.2 200 0.0 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 −25 −10 5 Temperature (5C) 20 35 50 65 80 95 110 125 Temperature (5C) Figure 11. Internal OVP Pin Pull-Up Current, IOVP(bias) Figure 12. Under-Voltage Detect Threshold, VUVP 1.2 400 380 VILIM_MIN (mV) VILIM (V) 1.1 1.0 0.9 360 340 320 300 0.8 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 Temperature (5C) −25 −10 5 20 35 50 65 80 95 110 125 Temperature (5C) Figure 13. Maximum Internal Current Set-Point, VILIM Figure 14. Minimum Internal Current Set-Point, VILIM_MIN www.onsemi.com 9 NCL30167 1.60 260 1.55 255 VREF (mV) VCS1(stop) (V) TYPICAL CHARACTERISTIC 1.50 1.45 250 245 240 1.40 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 −25 −10 5 Temperature (5C) 35 50 65 80 95 110 125 Figure 16. Internal Reference for Nominal LED Current, VREF 50.0 1.0 48.0 0.8 VZCD(rising) (mV) VZCD(falling) (mV) Figure 15. Threshold for Winding Short Fault Protection Activation, VCS1(stop) 46.0 44.0 42.0 0.6 0.4 0.2 40.0 0.0 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 −25 −10 5 Temperature (5C) 20 35 50 65 80 95 110 125 Temperature (5C) Figure 17. Lower ZCD Threshold, VZCD(falling) Figure 18. Upper ZCD Threshold, VZCD(rising) 4.60 0.50 4.55 0.48 VACCTH_H (V) VCS2(stop) (V) 20 Temperature (5C) 4.50 4.45 0.45 0.43 0.40 4.40 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 Temperature (5C) −25 −10 5 20 35 50 65 80 95 110 125 Temperature (5C) Figure 19. Current Sense Threshold for CS2 Pin Open Protection, VCS2(stop) Figure 20. Dimming Detection Comparator Threshold, VACCTH Going Up, VACCTH_H www.onsemi.com 10 NCL30167 0.40 1.20 0.38 1.10 VTF(start) (V) VACCTH_L (V) TYPICAL CHARACTERISTIC 0.35 0.33 1.00 0.90 0.80 0.30 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 −25 −10 5 Temperature (5C) 20 35 50 65 80 95 110 125 Temperature (5C) Figure 21. Dimming Detection Comparator Threshold, VACCTH Going Down, VACCTH_L Figure 22. TF Pin Voltage at which Thermal Fold-Back Starts, VTF(start) 90.0 0.70 88.0 ITF (mA) VTF(10%) (V) 0.60 0.50 86.0 84.0 0.40 82.0 0.30 80.0 −40 −25 −10 5 20 35 50 65 80 95 110 125 −40 Temperature (5C) RL,DS,on (W) 8.0 6.0 4.0 2.0 0.0 −10 5 20 35 50 65 5 20 35 50 65 80 95 110 Figure 24. Current Source for Direct NTC Connection, ITF 10.0 −25 −10 Temperature (5C) Figure 23. TF Pin Voltage at which Thermal Fold-Back Reduces VREF to 10%, VTF(10%) −40 −25 80 95 110 125 Temperature (5C) Figure 25. On-State Resistance of the Driving NMOS, RL,DS,on www.onsemi.com 11 125 NCL30167 TYPICAL CHARACTERISTIC Figure 26. Typical On-Time of the Internal Driving Switch Figure 27. Typical Off-Time of the Internal Driving Switch www.onsemi.com 12 NCL30167 APPLICATION INFORMATION Functional Description between the DRAIN pin and capacitor CVCC. Thanks to the cascoded drain architecture, the startup time is very fast (typ < 100 ms). Unlike a traditional asynchronous boost architecture, the cascoded architecture uses two MOSFETS. The low voltage MOSFET MLV_int., which is housed inside the IC, drives the external High Voltage NMOS MHV_ext via the DRV pin. NCL30167 uses a Constant On-time Boost architecture in order to target a unity power factor, when no dimming is detected. The cascoded drain architecture shown in Figure 28, where MHV_ext is the High Voltage Cascode NMOS, allows a simple implementation of a VCC supply by including a diode DVCC, external to the switcher IC, Vin L1 D1 Iind ID1 Vout Rcasc ICOUT Cout ILED MHV_ext DZcasc Ccasc VCC DVCC DRV CVCC Int_drv CS2 IRsense2 Rsense2 MLV_int CS1 Irsense1 Rsense1 Figure 28. Cascode Architecture processed then by a circuit block named “Vref processing”, which provides analog signal Vref. The reference voltage named Vref serves for the LED current regulation loop. The LED current regulation loop is working for all conduction angles, it is then possible by programming the Vref processing circuit block to get the desired dimming curve as depicted in Figure 30. The NCL30167 operates in Critical Conduction Mode (CrM) under all working conditions, regulating the average current flowing through the string of LEDs whether the dimmer is present or not. The ACC_TH pin senses a scaled down input voltage (Vin) and by comparing it to an internal reference voltage named VACC_TH it provides a digital signal DIM/DIMb that contains the amount of dimming information. DIM/DIMb is www.onsemi.com 13 VCCVCCreset VCCVCCoff www.onsemi.com 14 VCCV CS 1(stop) CS2 open (V CC>V CCon)*(V OVP>V UVP)*TSD Running Const. ON Time Running Const. Peak Current (VCOMP >VCton)*( V CS 1 VTF (start) Thermal Foldback (VCOMP VILIM_MIN VTF VCS1(stop) 4 Consecutive Pulses Latch VCC < VCC(reset) Low Supply VCC < VCC(off) 10 ms Timer Device Stops VCC > VCC(on) Thermal Fold-back Event VOTP < VTF(start) Immediate Reaction Reduced Output Current, Thermal Fold−back VOTP > VTF(start) Output Overvoltage VOVP > VOVP(off) 20 ms Timer Device Stops VOVP < VOVP(on) VCC > VCC(on) Overvoltage Pin Shorted to GND VOVP < VUVP Immediate Reaction Device Stops VCC < VCC(reset) Internal TSD 10 ms Timer Device Stops (VCC > VCC(on))&TSDb www.onsemi.com 19 NCL30167 CS2 ZCD Timeout Protection CS2 ZCD is not detected. To avoid stopping the device under this condition the ZCD timeout feature is added. If no ZCD event is detected until the ZCD timer (tZCD(timeout)) elapses the internal cascode switch is turned on anyway. The second CS2 pin has an additional feature. In case of very low average current is regulated the CS2 voltage can be too low. The CS2 sensed voltage can be too low so that the Vin L1 Vout D1 Rcasc Cout MHV_ext DZcasc Ccasc DRV VCC S Q R DVCC DRV CVCC 32 ms Timer ZCD Timeout CS2 Int_drv S MLV_int Q R VZCD CS1 Rsense2 Rsense1 Figure 36. CS2 Pin ZCD Timeout Protection − Principal Diagram Protection Against a Winding Short Overvoltage Protection Under some conditions, such as a winding short-circuit of the boost inductor, the on-time duration is at a minimum (based on the internal propagation delay of the detector and LEB duration). In this event, the current sense voltage increases above VILIM, because the controller is blanked due to the LEB time and fast current slope. Dangerously high current can occur in the system if nothing is done to stop the controller. To avoid this, an additional fast comparator senses when a voltage on the current sense pin CS1 reaches VCS1(stop) = 1.5 ⋅ VILIM. If the fast comparator toggles 4 times, the controller immediately enters a protection mode. See the block diagram at Figure 2 for more details. An overvoltage condition, for example if the LED string is open, can be sensed at Vout voltage by the external resistor divider comprised of Rovp_top and Rovp_bot resistors (see Figure 37) which is connected to the OVP pin. If the voltage of the OVP pin exceeds the VOVP(off) reference voltage, the OVP fault state goes high and the switching regulator stops switching. When the voltage at OVP pin drops below the VOVP(on) the device starts switching again. In addition the OVP input also has under-voltage protection (UVP) to ensure the resistor divider is properly connected. If the voltage at OVP pin is below the VUVP threshold the device stops. www.onsemi.com 20 NCL30167 IOVP(bias) Vdd Vout OVP_CMP ROVP_top − 20 ms Filter OVP UVP_CMP − UVPstop 0.5 V + VUVP ROVP_bot OVP 3.0 V VOVP + Figure 37. Overvoltage Protection Circuit Thermal Fold-Back The thermal fold-back circuit reduces the current supplying to the LED string if the temperature monitored by an external NTC resistor is too high. The current is reduced down to 0% of its nominal value. The thermal fold-back starting temperature depends on the NTC resistor value selected by the power supply designer. The TF pin allows the direct connection of an NTC. When the TF pin voltage VTF drops below VTF(start), the internal reference for the constant current control VREF is decreased proportionally to VTF. When VTF reaches VTF(10%), VREF is set to VREF10, corresponding to 10% of the required output current. If VTF drops below VTF(10%) the switching regulator still reduces the VREF. If VREF drops below the 5% of its required value then the switching regulator enters the stop mode. The thermal fold-back and OTP thresholds correspond roughly to the following resistances: • Thermal fold-back starts when RNTC ≤ 11.76 kW. • Thermal fold-back sets the 10% of VREF when RNTC ≤ 5.88 kW. Iout Iout(nom) 10% Iout(nom) 0 VTF(10%) VTF(start) Figure 38. Output Current Reduction vs. TF Pin Voltage www.onsemi.com 21 VTF NCL30167 At startup, when VCC reaches VCC(on), the TF pin sensing is blanked for at least 300 ms in order to allow the TF pin voltage to reach its nominal value if a filtering capacitor is connected to the TF pin. This is to avoid flickering of the LED light in case of over temperature or noise coupled to TF pin. The maximum value of OTP pin capacitor is given by the following formula (The standard start-up condition is considered and the NTC current is neglected): C TF max + + t TF(blank)min @ I TF min (eq. 6) V TF(start)max 200 @ 10 *6 @ 80 @ 10 *6 F + 15.1 nF 1.06 Vdd Vref ITF VTF(start) − TF OA Vref(TF) = KTF ⋅ Vref 1.0 V Multiplier RNTC RTF CTF + Figure 39. Thermal Fold-Back Circuitry Vref vs. Temperature 100 Vref (%) 80 60 40 20 0 80 90 100 110 120 130 140 150 160 170 180 Temperature (5C) Figure 40. Typical Thermal Fold-Back Characteristics when the 330 kW NTC and 39 kW Parallel Resistor are Connected to TF Pin Temperature Shutdown instantaneously, and goes to the stop mode with low power consumption. Specific blocks are still powered from the VCC supply to keep the TSD information. When the temperature falls below the low threshold, the device restarts. See the status diagrams at the Figure 29. The NCL30167 includes a temperature shutdown protection with a trip point typically at 150°C and the typical hysteresis of 30°C. When the temperature rises above the high threshold, the switcher stops switching The product described herein (NCL30167) may be covered by one or more of U. S. patents. www.onsemi.com 22 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC−10 NB CASE 751BQ ISSUE B 10 1 SCALE 1:1 DATE 26 NOV 2013 2X 0.10 C A-B D D A 2X F 0.10 C A-B 10 6 H E 1 5 0.20 C 10X B 2X 5 TIPS L2 b 0.25 A3 L DETAIL A M C SEATING PLANE C A-B D TOP VIEW 10X h 0.10 C 0.10 C X 45 _ M A e A1 C SIDE VIEW SEATING PLANE DETAIL A END VIEW DIM A A1 A3 b D E e H h L L2 M 10 1.00 PITCH 1 6.50 10X 1.18 1 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON52341E SOIC−10 NB MILLIMETERS MIN MAX 1.25 1.75 0.10 0.25 0.17 0.25 0.31 0.51 4.80 5.00 3.80 4.00 1.00 BSC 5.80 6.20 0.37 REF 0.40 0.80 0.25 BSC 0_ 8_ GENERIC MARKING DIAGRAM* RECOMMENDED SOLDERING FOOTPRINT* 10X 0.58 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.10mm TOTAL IN EXCESS OF ’b’ AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15mm PER SIDE. DIMENSIONS D AND E ARE DETERMINED AT DATUM F. 5. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM F. 6. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. XXXXX ALYWX G XXXXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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