NCP145AMX105TCG

Voltage Regulator, Bias Rail CMOS, Very Low Dropout, 500 mA NCP145 The NCP145 is a 500 mA VLDO equipped with NMOS pass transistor and a separate bias supply voltage (VBIAS). The device provides very stable, accurate output voltage with low noise suitable for space constrained, noise sensitive applications. In order to optimize performance for battery operated portable applications, the NCP145 features low IQ consumption. The XDFN4 1.2 mm x 1.2 mm package is optimized for use in space constrained applications. Features • • • • • • • • • • • • • Input Voltage Range: 1.0 V to 5.5 V Bias Voltage Range: 2.4 V to 5.5 V Fixed Voltage Versions Available Output Voltage Range: 1.0 V to 1.8 V (Fixed) ±1.5% Accuracy over Temperature, 0.5% VOUT @ 25°C Ultra−Low Dropout: Typ. 140 mV at 500 mA Very Low Bias Input Current of Typ. 80 mA Very Low Bias Input Current in Disable Mode: Typ. 0.5 mA Logic Level Enable Input for ON/OFF Control Output Active Discharge Option Available Stable with a 2.2 mF Ceramic Capacitor Available in XDFN4 − 1.2 mm x 1.2 mm x 0.4 mm Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com T MARKING DIAGRAM 1 XXM XDFN4 CASE 711BC 1 XX = Specific Device Code M = Date Code PIN CONNECTIONS 4 IN 3 EN 2 BIAS GND 5 OUT 1 (Top View) Typical Applications • Battery−powered Equipment • Smartphones, Tablets • Cameras, DVRs, STB and Camcorders ORDERING INFORMATION See detailed ordering, marking and shipping information on page 10 of this data sheet. VBIAS >2.7 V NCP145 100 nF BIAS VIN 1.5 V 1 mF EN VOUT 1 V up to 500 mA OUT IN 2.2 mF GND VEN Figure 1. Typical Application Schematics © Semiconductor Components Industries, LLC, 2017 September, 2019 − Rev. 3 1 Publication Order Number: NCP145/D NCP145 CURRENT LIMIT IN EN BIAS OUT ENABLE BLOCK UVLO 150 W VOLTAGE REFERENCE + − THERMAL LIMIT *Active DISCHARGE GND *Active output discharge function is present only in NCP145AMXyyyTCG and NCP145CMXyyyTCG devices. yyy denotes the particular output voltage option. Figure 2. Simplified Schematic Block Diagram www.onsemi.com 2 NCP145 PIN FUNCTION DESCRIPTION Pin No. XDFN4 Pin Name 1 OUT Regulated Output Voltage pin 2 BIAS Bias voltage supply for internal control circuits. This pin is monitored by internal Under-Voltage Lockout Circuit. 3 EN Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into shutdown mode. 4 IN Input Voltage Supply pin 5 GND Description Ground ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN −0.3 to 6 V VOUT −0.3 to (VIN+0.3) ≤ 6 V VEN, VBIAS −0.3 to 6 V Output Short Circuit Duration tSC unlimited s Maximum Junction Temperature TJ 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Input Voltage (Note 1) Output Voltage Chip Enable, Bias Input Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection (except OUT pin) and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Thermal Characteristics, XDFN4 1.2 mm x 1.2 mm Thermal Resistance, Junction−to−Air (Note 3) Symbol Value Unit RqJA 170 °C/W 3. This data was derived by thermal simulations for a single device mounted on the 40 mm x 40 mm x 1.6 mm FR4 PCB with 2−ounce 800 sq mm copper area on top and bottom. www.onsemi.com 3 NCP145 ELECTRICAL CHARACTERISTICS −40°C ≤ TJ ≤ 85°C; VBIAS = 2.7 V or (VOUT + 1.6 V), whichever is greater, VIN = VOUT(NOM) + 0.3 V, IOUT = 1 mA, VEN = 1 V, unless otherwise noted. CIN = 1 mF, COUT = 2.2 mF, CBIAS = 0.1 mF. Typical values are at TJ = +25°C. Min/Max values are for −40°C ≤ TJ ≤ 85°C unless otherwise noted. (Note 4) Parameter Symbol Min Operating Input Voltage Range VIN Operating Bias Voltage Range VBIAS Undervoltage Lock−out Test Conditions VBIAS Rising Hysteresis Output Voltage Accuracy Typ Max Unit VOUT + VDO 5.5 V (VOUT + 1.40) ≥ 2.4 5.5 V UVLO 1.6 0.2 V VOUT ±0.5 % Output Voltage Accuracy −40°C ≤ TJ ≤ 85°C, VOUT(NOM) + 0.3 V ≤ VIN ≤ VOUT(NOM) + 1.0 V, 2.7 V or (VOUT(NOM) + 1.6 V), whichever is greater < VBIAS < 5.5 V, 1 mA < IOUT < 500 mA VOUT VIN Line Regulation VOUT(NOM) + 0.3 V ≤ VIN ≤ 5.0 V LineReg 0.01 %/V VBIAS Line Regulation 2.7 V or (VOUT(NOM) + 1.6 V), whichever is greater < VBIAS < 5.5 V LineReg 0.01 %/V Load Regulation IOUT = 1 mA to 500 mA LoadReg 1.5 mV VIN Dropout Voltage IOUT = 150 mA (Note 5) VDO 37 75 IOUT = 500 mA (Note 5) VDO 140 250 VBIAS Dropout Voltage IOUT = 500 mA, VIN = VBIAS (Note 5) VDO 1.1 1.5 V Output Current Limit VOUT = 90% VOUT(NOM) Bias Pin Operating Current VBIAS = 2.7 V Bias Pin Disable Current ICL −1.5 % mV 800 1000 mA IBIAS 80 110 mA VEN ≤ 0.4 V IBIAS(DIS) 0.5 1 mA Vinput Pin Disable Current VEN ≤ 0.4 V IVIN(DIS) 0.5 1 mA EN Pin Threshold Voltage EN Input Voltage “H” VEN(H) EN Input Voltage “L” VEN(L) EN Pull Down Current VEN = 5.5 V Power Supply Rejection Ratio VIN to VOUT, f = 1 kHz, IOUT = 150 mA, VIN ≥ VOUT +0.5 V VBIAS to VOUT, f = 1 kHz, IOUT = 150 mA, VIN ≥ VOUT +0.5 V 550 +1.5 V 0.9 0.4 IEN 0.3 PSRR(VIN) 70 dB PSRR(VBIAS) 80 dB VN 40 mVRMS °C Output Noise Voltage VIN = VOUT +0.5 V, VOUT(NOM) = 1.0 V, f = 10 Hz to 100 kHz Thermal Shutdown Threshold Temperature increasing 160 Temperature decreasing 140 Output Discharge Pull−Down VEN ≤ 0.4 V, VOUT = 0.5 V, NCP145A and NCP145C options only RDISCH 150 1 mA W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Dropout voltage is characterized when VOUT falls 3% below VOUT(NOM). www.onsemi.com 4 NCP145 ELECTRICAL CHARACTERISTICS – NCP145xMX100TCG −40°C ≤ TJ ≤ 85°C; VBIAS = 2.7 V, VIN = 1.3 V, IOUT = 1 mA, VEN = 1 V, CIN = 1 mF, COUT = 2.2 mF, CBIAS = 0.1 mF. Typical values are at TJ = +25°C. Min/Max values are for −40°C ≤ TJ ≤ 85°C unless otherwise noted. (Note 6) Parameter Test Conditions Symbol Min Typ Max Unit Turn-On Time From assertion of VEN to VOUT = 98%VOUT(NOM). VOUT(NOM) = 1.0 V ‘A’ option tON 300 ms Turn-On Slew Rate VEN 0 V to 1.0 V, VOUT(NOM) = 1.0 V, VOUT from 10 mV to 610 mV ‘A’ option SR 9 mV/ms ELECTRICAL CHARACTERISTICS – NCP145xMX105TCG −40°C ≤ TJ ≤ 85°C; VBIAS = 2.7 V, VIN = 1.35 V, IOUT = 1 mA, VEN = 1 V, CIN = 1 mF, COUT = 2.2 mF, CBIAS = 0.1 mF. Typical values are at TJ = +25°C. Min/Max values are for −40°C ≤ TJ ≤ 85°C unless otherwise noted. (Note 6) Parameter Test Conditions Symbol Min Typ Max Unit Turn-On Time From assertion of VEN to VOUT = 98%VOUT(NOM). VOUT(NOM) = 1.05 V ‘A’ option tON 260 ms Turn-On Slew Rate VEN 0 V to 1.0 V, VOUT(NOM) = 1.05 V, VOUT from 10 mV to 610 mV ‘A’ option SR 11 mV/ms ELECTRICAL CHARACTERISTICS – NCP145xMX120TCG −40°C ≤ TJ ≤ 85°C; VBIAS = 2.8 V, VIN = 1.5 V, IOUT = 1 mA, VEN = 1 V, CIN = 1 mF, COUT = 2.2 mF, CBIAS = 0.1 mF. Typical values are at TJ = +25°C. Min/Max values are for −40°C ≤ TJ ≤ 85°C unless otherwise noted. (Note 6) Parameter Turn-On Time Turn-On Slew Rate Test Conditions Symbol From assertion of VEN to VOUT = 98%VOUT(NOM). VOUT(NOM) = 1.20 V ‘A’ option tON ‘C’ option VEN 0 V to 1.0 V, VOUT(NOM) = 1.20 V, VOUT from 10 mV to 610 mV ‘A’ option ‘C’ option Min Typ 210 Max Unit ms 310 SR 17 mV/ms 11 6. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25°C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. www.onsemi.com 5 NCP145 TYPICAL CHARACTERISTICS VDO (VIN − VOUT) DROPOUT VOLTAGE (mV) At TJ = +25°C, VIN = VOUT(TYP) + 0.3 V, VBIAS = 2.7 V, VEN = VBIAS, VOUT(NOM) = 1.0 V, IOUT = 500 mA, CIN = 1 mF, CBIAS = 0.1 mF, and COUT = 2.2 mF (effective capacitance), unless otherwise noted. VDO (VIN − VOUT) DROPOUT VOLTAGE (mV) 200 180 160 +125°C +85°C 140 120 100 −40°C 80 60 40 +25°C 20 0 100 200 400 300 150 +125°C +85°C 100 +25°C −40°C 50 VDO (VBIAS − VOUT) DROPOUT VOLTAGE (mV) 100 80 +125°C 60 +85°C 40 20 0 0.5 1.0 1.5 2.0 +25°C −40°C 2.5 3.0 3.5 4.0 Figure 4. VIN Dropout Voltage vs. (VBIAS − VOUT) and Temperature TJ 200 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 4.5 500 450 IOUT = 500 mA 400 350 300 +125°C 250 +85°C 200 +25°C 150 −40°C 100 50 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VBIAS − VOUT (V) VBIAS − VOUT (V) Figure 5. VIN Dropout Voltage vs. (VBIAS − VOUT) and Temperature TJ Figure 6. VIN Dropout Voltage vs. (VBIAS − VOUT) and Temperature TJ 4.5 140 1500 1400 120 +125°C 1300 +85°C +125°C 100 IBIAS (mA) −40°C 1200 +25°C 1100 80 60 −40°C +25°C 40 +85°C 1000 900 120 Figure 3. VIN Dropout Voltage vs. IOUT and Temperature TJ IOUT = 300 mA 0.5 160 140 VBIAS − VOUT (V) 250 0 IOUT = 100 mA 180 IOUT, OUTPUT CURRENT (mA) 300 VDO (VIN − VOUT) DROPOUT VOLTAGE (mV) 500 VDO (VIN − VOUT) DROPOUT VOLTAGE (mV) 0 200 20 0 50 100 150 200 250 300 0 0 50 100 150 200 250 300 350 400 450 500 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 7. VBIAS Dropout Voltage vs. IOUT and Temperature TJ Figure 8. BIAS Pin Current vs. IOUT and Temperature TJ www.onsemi.com 6 NCP145 TYPICAL CHARACTERISTICS At TJ = +25°C, VIN = VOUT(TYP) + 0.3 V, VBIAS = 2.7 V, VEN = VBIAS, VOUT(NOM) = 1.0 V, IOUT = 500 mA, CIN = 1 mF, CBIAS = 0.1 mF, and COUT = 2.2 mF (effective capacitance), unless otherwise noted. 200 1000 180 900 ICL, CURRENT LIMIT (mA) 160 IBIAS (mA) 140 120 +125°C +85°C 100 80 60 40 20 0 2.0 +25°C −40°C +125°C 800 700 +85°C +25°C 600 −40°C 500 400 300 200 100 2.5 3.0 3.5 4.0 4.5 5.0 0 5.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VBIAS (V) VBIAS − VOUT (V) Figure 9. BIAS Pin Current vs. VBIAS and Temperature TJ Figure 10. Current Limit vs. (VBIAS − VOUT) www.onsemi.com 7 NCP145 TYPICAL CHARACTERISTICS 50 mV/div VOUT tR = tF = 1 ms 200 mA/div tR = tF = 1 ms VOUT IOUT IOUT 50 ms/div Figure 12. Load Transient Response, IOUT = 50 mA to 500 mA, COUT = 2.2 mF 50 mV/div 50 ms/div Figure 11. Load Transient Response, IOUT = 50 mA to 500 mA, COUT = 10 mF VOUT VOUT tR = tF = 1 ms 200 mA/div 200 mA/div 50 mV/div 200 mA/div 50 mV/div At TJ = +25°C, VIN = VOUT(TYP) + 0.3 V, VBIAS = 2.7 V, VEN = VBIAS, VOUT(NOM) = 1.0 V, IOUT = 500 mA, CIN = 1 mF, CBIAS = 0.1 mF, and COUT = 2.2 mF (effective capacitance), unless otherwise noted. tR = tF = 1 ms IOUT IOUT 500 ms/div 500 ms/div Figure 14. Load Transient Response, IOUT = 1 mA to 500 mA, COUT = 2.2 mF 10 mV/div 10 mV/div Figure 13. Load Transient Response, IOUT = 1 mA to 500 mA, COUT = 10 mF VOUT VOUT tR = tF = 5 ms VIN VIN 1 V/div 1 V/div tR = tF = 5 ms 20 ms/div 20 ms/div Figure 15. VIN Line Transient Response, VIN = 1.3 V to 2.3 V, IOUT = 100 mA, COUT = 10 mF Figure 16. VIN Line Transient Response, VIN = 1.3 V to 2.3 V, IOUT = 100 mA, COUT = 2.2 mF www.onsemi.com 8 NCP145 APPLICATIONS INFORMATION NCP145 VBAT EN Switch−mode DC/DC VOUT = 1.5 V IN LX EN FB Processor BIAS 1.5 V OUT 1.0 V IN LOAD GND GND I/O I/O To other circuits Figure 17. Typical Application: Low−Voltage DC/DC Post−Regulator with ON/OFF Functionality The NCP145 dual−rail very low dropout voltage regulator is using NMOS pass transistor for output voltage regulation from VIN voltage. All the low current internal control circuitry is powered from the VBIAS voltage. The use of an NMOS pass transistor offers several advantages in applications. Unlike PMOS topology devices, the output capacitor has reduced impact on loop stability. Vin to Vout operating voltage difference can be very low compared with standard PMOS regulators in very low Vin applications. The NCP145 offers smooth monotonic start-up. The controlled voltage rising limits the inrush current. The Enable (EN) input is equipped with internal hysteresis. NCP145 Voltage linear regulator Fixed version is available. the NCP145 respective pins directly in the device PCB copper layer, not through vias having not negligible impedance. When using small ceramic capacitor, their capacitance is not constant but varies with applied DC biasing voltage, temperature and tolerance. The effective capacitance can be much lower than their nominal capacitance value, most importantly in negative temperatures and higher LDO output voltages. That is why the recommended Output capacitor capacitance value is specified as Effective value in the specific application conditions. Enable Operation The enable pin will turn the regulator on or off. The threshold limits are covered in the electrical characteristics table in this data sheet. To get the full functionality of Soft Start, it is recommended to turn on the VIN and VBIAS supply voltages first and activate the Enable pin no sooner than VIN and VBIAS are on their nominal levels. If the enable function is not to be used then the pin should be connected to VIN or VBIAS. If the EN pin voltage is < 0.4 V the device is guaranteed to be disabled. The pass transistor is turned−off. The active discharge transistor is active so that the output voltage VOUT is pulled down to GND through a 150 W resistor. If the EN pin voltage > 0.9 V the device is guaranteed to be enabled. The NCP145 regulates the output voltage and the active discharge transistor is turned−off. The EN pin has internal pull−down current source which assures that the device is turned−off when the EN pin is not connected. Dropout Voltage Because of two power supply inputs VIN and VBIAS and one VOUT regulator output, there are two Dropout voltages specified. The first, the VIN Dropout voltage is the voltage difference (VIN – VOUT) when VOUT starts to decrease by percent specified in the Electrical Characteristics table. VBIAS is high enough; specific value is published in the Electrical Characteristics table. The second, VBIAS dropout voltage is the voltage difference (VBIAS – VOUT) when VIN and VBIAS pins are joined together and VOUT starts to decrease. Input and Output Capacitors The device is designed to be stable for ceramic output capacitors with Effective capacitance in the range from 2.2 mF to 10 mF. The device is also stable with multiple capacitors in parallel, having the total effective capacitance in the specified range. In applications where no low input supplies impedance available (PCB inductance in VIN and/or VBIAS inputs as example), the recommended CIN = 1 mF and CBIAS = 0.1 mF or greater. Ceramic capacitors are recommended. For the best performance all the capacitors should be connected to Current Limitation The internal Current Limitation circuitry allows the device to supply the full nominal current and surges but protects the device against Current Overload or Short. Thermal Protection Internal thermal shutdown (TSD) circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. When TSD activated, the www.onsemi.com 9 NCP145 regulator output turns off. When cooling down under the low temperature threshold, device output is activated again. This TSD feature is provided to prevent failures from accidental overheating. Activation of the thermal protection circuit indicates excessive power dissipation or inadequate heatsinking. For reliable operation, junction temperature should be limited to +125°C maximum. ORDERING INFORMATION Device Nominal Output Voltage Marking NCP145AMX100TCG 1.00 V HE NCP145AMX105TCG 1.05 V HG NCP145AMX120TCG 1.20 V HD NCP145CMX120TCG 1.20 V HH Option Output Active Discharge Normal Turn−On Slew Rate Package Shipping† XDFN4 (Pb−Free) 3000 / Tape & Reel Output Active Discharge Slow Turn−On Slew Rate †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. To order other package and voltage variants, please contact your ON Semiconductor sales representative www.onsemi.com 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN4 1.2x1.2, 0.8P CASE 711BC ISSUE O 1 SCALE 4:1 A B D PIN ONE REFERENCE ÉÉ ÉÉ DATE 15 SEP 2015 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DETAIL B E DETAIL B TOP VIEW A3 SIDE VIEW A 0.05 C ALTERNATE CONSTRUCTION A1 4X (0.12) 4X 0.05 C NOTE 4 C SIDE VIEW SEATING PLANE 4X D2 1 e/2 0.05 b C A B NOTE 3 e 2 M 4X DETAIL A L (0.12) DIM A A1 A3 b b1 D D2 E E2 e L L1 MILLIMETERS MIN MAX 0.35 0.45 0.00 0.05 0.13 REF 0.25 0.35 0.15 0.25 1.15 1.25 0.58 0.68 1.15 1.25 0.58 0.68 0.80 BSC 0.25 0.35 0.13 0.23 GENERIC MARKING DIAGRAM* E2 XXM L1 DETAIL A 1 3 4 XX = Specific Device Code M = Date Code b1 BOTTOM VIEW *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. RECOMMENDED MOUNTING FOOTPRINT* PACKAGE OUTLINE 4X 1.50 0.25 C 0.195 0.22 4X 0.80 PITCH 0.35 2X 0.63 1 4X 0.48 45 5 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON04908G XDFN4, 1.2X1.2, 0.8P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative