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NCP5901MNTBG

NCP5901MNTBG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    VFDFN8

  • 描述:

    BUFFER/INVERTER BASED MOSFET DRI

  • 数据手册
  • 价格&库存
NCP5901MNTBG 数据手册
ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NCP5901 VR12 Compatible Synchronous Buck MOSFET Drivers The NCP5901 is a high performance dual MOSFET gate driver optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. It can drive up to 3 nF load with a 25 ns propagation delay and 20 ns transition time. Adaptive anti−cross−conduction and power saving operation circuit can provide a low switching loss and high efficiency solution for notebook and desktop systems. Bidirectional EN pin can provide a fault signal to controller when the gate driver fault detect under OVP, UVLO occur. Also, an under−voltage lockout function guarantees the outputs are low when supply voltage is low. http://onsemi.com 8 1 1 SOIC−8 NB D SUFFIX CASE 751 DFN8 MN SUFFIX CASE 506AA Features • • • • • • • • • • • Faster Rise and Fall Times Adaptive Anti−Cross−Conduction Circuit Pre OV function ZCD Detect Floating Top Driver Accommodates Boost Voltages of up to 35 V Output Disable Control Turns Off Both MOSFETs Under−voltage Lockout Power Saving Operation Under Light Load Conditions Direct Interface to NCP6151 and Other Compatible PWM Controllers Thermally Enhanced Package These are Pb−Free Devices MARKING DIAGRAMS 8 N5901 ALYW G 1 N5901 A L Y W G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package 1 Typical Applications • Power Solutions for Desktop Systems AJ M G AJMG G = Specific Device Code = Date Code = Pb−Free Device ORDERING INFORMATION Device Package Shipping† NCP5901MNTBG DFN8 3000 / Tape & Reel (Pb−Free) NCP5901DR2G SOIC−8 2500 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 2 1 Publication Order Number: NCP5901/D NCP5901 BST DRVH 1 PWM SW FLAG 9 EN GND VCC DRVL (Top View) Figure 1. Pin Diagram BST VCC DRVH PWM Logic SW Anti−Cross Conduction VCC DRVL EN Fault ZCD Detection UVLO Pre−OV Figure 2. Block Diagram Table 1. Pin Descriptions Pin No. Symbol Description 1 BST Floating bootstrap supply pin for high side gate driver. Connect the bootstrap capacitor between this pin and the SW pin. 2 PWM Control input. The PWM signal has three distinctive states: Low = Low Side FET Enabled, Mid = Diode Emulation Enabled, High = High Side FET Enabled. 3 EN 4 VCC Power supply input. Connect a bypass capacitor (0.1 mF) from this pin to ground. 5 DRVL Low side gate drive output. Connect to the gate of low side MOSFET. 6 GND Bias and reference ground. All signals are referenced to this node (QFN Flag). 7 SW 8 DRVH High side gate drive output. Connect to the gate of high side MOSFET. 9 FLAG Thermal flag. There is no electrical connection to the IC. Connect to ground plane. Logic input. A logic high to enable the part and a logic low to disable the part. Switch node. Connect this pin to the source of the high side MOSFET and drain of the low side MOSFET. http://onsemi.com 2 NCP5901 12V_POWER CR1 MMSD4148 R164 R1 1.02 R143 0.0 TP4 PWM TP1 C4 0.027uF EN C2 4.7uF TP5 + CE9 390uF TP6 GND 235nH TP7 Q9 NTMFS4851N VREG_SW1_LG LG VCCP L VREG_SW1_OUT Q10 NTMFS4851N R3 2.2 JP13_ETCH CSN11 PAD TP8 C5 1uF C3 4.7uF 0.0 VREG_SW1_HG HG VCC C1 4.7uF R142 PWM SW DRON TP2 0.0 NCP5901 TP3 BST Q1 NTMFS4821N C6 2700pF JP14_ETCH CSP11 Figure 3. Application Circuit Table 2. ABSOLUTE MAXIMUM RATINGS Pin Symbol Pin Name VMAX VMIN VCC Main Supply Voltage Input 15 V −0.3 V BST Bootstrap Supply Voltage 35 V wrt/ GND 40 V ≤ 50 ns wrt/ GND 15 V wrt/ SW −0.3 V wrt/SW SW Switching Node (Bootstrap Supply Return) 35 V 40 V ≤ 50 ns −5 V −10 V (200 ns) DRVH High Side Driver Output BST+0.3 V −0.3 V wrt/SW −2 V (
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