NCP716BCSN330T1G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Wide Input Voltage Low Dropout, Ultra-Low Iq Regulator NCP716BC The NCP716BC is 150 mA LDO Linear Voltage Regulator. It is a very stable and accurate device with ultra−low ground current consumption (4.7 mA over the full output load range) and a wide input voltage range (up to 24 V). The regulator incorporates several protection features such as Thermal Shutdown and Current Limiting. www.onsemi.com MARKING DIAGRAM Features 5 • Operating Input Voltage Range: 2.5 V to 24 V • Fixed Voltage Options Available: • • • • • • 3.0 V, 3.3 V, 3.45 V and 5.0 V Ultra Low Quiescent Current: Max. 4.7 mA over Temperature ±2% Accuracy over Full Temperature Range Noise: 115 mVRMS from 200 Hz to 100 kHz Thermal Shutdown and Current Limit Protection Available in TSOP−5 Package This is a Pb−Free Device Portable Equipment Communication Systems Industrial Measurement Systems Home Automation Devices Vin= (4 − 24 V) 1 1 XXX = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) GND 1 5 N/C IN OUT N/C TSOP−5 (Top View) 3.0 V, 3.3 V, 3.45 V and 5.0 V/150 mA Vin NCP716BC Cin 1uF 5 PIN CONNECTIONS Typical Applications • • • • XXXAYWG G TSOP−5 CASE 483 Vout Cout GND ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 8 of this data sheet. 1uF Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev. 3 1 Publication Order Number: NCP716BC/D NCP716BC IN UVLO BANDGAP REFERENCE THERMAL SHUTDOWN MOSFET DRIVER WITH CURRENT LIMIT OUT EEPROM GND Figure 2. Simplified Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin No. Pin Name 3 OUT Regulated output voltage pin. A small 1.0 mF ceramic capacitor is needed from this pin to ground to assure stability. 1 GND Power supply ground. 2 IN 4 N/C This pin can be tied to ground to improve thermal dissipation or left disconnected. 5 N/C This pin can be tied to ground to improve thermal dissipation or left disconnected. Description Input pin. A small 1.0 mF ceramic capacitor is needed from this pin to ground to assure stability. Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN −0.3 to 24 V VOUT −0.3 to 6 V tSC Indefinite s TJ(MAX) 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Input Voltage (Note 1) Output Voltage Output Short Circuit Duration Maximum Junction Temperature Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22−A114 ESD Machine Model tested per EIA/JESD22−A115 ESD Charged Device Model tested per EIA/JESD22−C101E Latchup Current Maximum Rating tested per JEDEC standard: JESD78. Table 3. THERMAL CHARACTERISTICS Rating Thermal Characteristics, TSOP−5 Thermal Resistance, Junction−to−Air Symbol Value Unit RqJA 250 °C/W www.onsemi.com 2 NCP716BC Table 4. ELECTRICAL CHARACTERISTICS Voltage version 3.0 V −40°C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 5) Parameter Test Conditions Symbol Min VIN 2.5 Max Unit 24 V −40°C ≤ TJ ≤ 125°C VOUT 2.94 3.0 3.06 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 0.1 mA RegLINE 4 20 mV Load Regulation IOUT = 0.1 mA to 150 mA RegLOAD 0.0013 0.008 %/mA VOUT = 0.97 VOUT(NOM), IOUT = 150 mA VDO 700 1100 mV 4.7 Operating Input Voltage Output Voltage Accuracy Dropout Voltage (Note 3) Maximum Output Current Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 4) Thermal Shutdown Hysteresis (Note 4) Typ (Note 6) IOUT IOUT = 0 mA, −40 < TA < 125°C IGND 3.2 PSRR 55 dB VOUT = 3.0 V, IOUT = 150 mA f = 100 Hz to 100 kHz VNOISE 80 mVrms Temperature increasing from TJ = +25°C TSD 180 °C Temperature falling from TSD TSDH VIN = 4.0 V + 200 mVpp modulation IOUT = 1 mA, COUT =10 mF f = 1 kHz 150 − mA 10 − mA °C 3. Characterized when VOUT falls 3% below the nominal VOUT = 3.0 V 4. Guaranteed by design and characterization. 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. Please follow the Safe Operating Area. Table 5. ELECTRICAL CHARACTERISTICS Voltage version 3.3 V −40°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 9) Parameter Test Conditions Symbol Min VIN 2.5 −40°C ≤ TJ ≤ 125°C VOUT 3.234 VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 0.1 mA Operating Input Voltage Output Voltage Accuracy Line Regulation Load Regulation Typ Max Unit 24 V 3.30 3.366 V RegLINE 4 20 mV IOUT = 0.1 mA to 150 mA RegLOAD 0.0013 0.008 %/mA Dropout Voltage (Note 7) VOUT = 0.97 VOUT(NOM), IOUT = 150 mA VDO 685 1080 mV Maximum Output Current (Note 10) IOUT IOUT = 0 mA, −40 < TA < 125°C IGND 3.2 PSRR 54 dB VNOISE 86 mVrms Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 8) Thermal Shutdown Hysteresis (Note 8) VIN = 4.3 V + 200 mVpp modulation IOUT = 1 mA, COUT =10 mF f = 1 kHz VOUT = 3.3 V, IOUT = 150 mA f = 100 Hz to 100 kHz Temperature increasing from TJ = +25°C TSD Temperature falling from TSD TSDH 150 mA 4.7 180 − 10 mA °C − °C 7. Characterized when VOUT falls 3% below the nominal VOUT = 3.3 V 8. Guaranteed by design and characterization. 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 10. Please follow the Safe Operating Area. www.onsemi.com 3 NCP716BC Table 6. ELECTRICAL CHARACTERISTICS Voltage version 3.45 V −40°C ≤ TJ ≤ 125°C; VIN = 4.45 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 13) Parameter Test Conditions Symbol Min VIN 2.5 Max Unit 24 V −40°C ≤ TJ ≤ 125°C VOUT 3.381 3.45 3.519 V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 0.1 mA RegLINE 4 20 mV Load Regulation IOUT = 0.1 mA to 150 mA RegLOAD 0.0013 0.008 %/mA VOUT = 0.97 VOUT(NOM), IOUT = 150 mA VDO 680 1070 mV 4.7 Operating Input Voltage Output Voltage Accuracy Dropout Voltage (Note 11) Maximum Output Current Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 12) Thermal Shutdown Hysteresis (Note 12) Typ (Note 14) IOUT IOUT = 0 mA, −40 < TA < 125°C IGND 3.2 PSRR 54 dB VOUT = 4.45 V, IOUT = 150 mA f = 100 Hz to 100 kHz VNOISE 88 mVrms Temperature increasing from TJ = +25°C TSD 180 °C Temperature falling from TSD TSDH VIN = 4.45 V + 200 mVpp modulation IOUT = 1 mA, COUT =10 mF f = 1 kHz 150 − mA 10 − mA °C 11. Characterized when VOUT falls 3% below the nominal VOUT = 3.45 V 12. Guaranteed by design and characterization. 13. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 14. Please follow the Safe Operating Area. Table 7. ELECTRICAL CHARACTERISTICS Voltage version 5.0 V −40°C ≤ TJ ≤ 125°C; VIN = 6.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 17) Parameter Test Conditions Symbol Min VIN 2.5 −40°C ≤ TJ ≤ 125°C VOUT 4.90 VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 0.1 mA Operating Input Voltage Output Voltage Accuracy Line Regulation Load Regulation Typ Max Unit 24 V 5.0 5.10 V RegLINE 4 20 mV IOUT = 0.1 mA to 150 mA RegLOAD 0.0013 0.008 %/mA Dropout Voltage (Note 15) VOUT = 0.97 VOUT(NOM), IOUT = 150 mA VDO 600 955 mV Maximum Output Current (Note 18) IOUT IOUT = 0 mA, −40 < TA < 125°C IGND 3.2 PSRR 53 dB VNOISE 115 mVrms Ground Current Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 16) Thermal Shutdown Hysteresis (Note 16) VIN = 6.0 V + 200 mVpp modulation IOUT = 1 mA, COUT =10 mF f = 1 kHz VOUT = 5.0 V, IOUT = 150 mA f = 100 Hz to 100 kHz Temperature increasing from TJ = +25°C TSD Temperature falling from TSD TSDH 150 mA 4.7 180 − 10 mA °C − °C 15. Characterized when VOUT falls 3% below the nominal VOUT = 5.0 V 16. Guaranteed by design and characterization. 17. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 18. Please follow the Safe Operating Area. www.onsemi.com 4 NCP716BC 3.016 5.02 3.012 5.01 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS 3.008 3.004 NCP716BCSN300T1G CIN = COUT = 1 mF IOUT = 1 mA VIN = 4.0 V to 24 V 3.000 2.996 −40 −20 0 20 40 60 80 100 5.00 NCP716BCSN500T1G CIN = COUT = 1 mF IOUT = 1 mA 4.99 4.98 VIN = 6.0 V VIN = 8.0 to 24 V 4.97 −40 120 −20 0 Figure 3. Output Voltage vs. Temperature 3.01 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 5.06 3.00 VIN = 4.0 V VIN = 5.0 V VIN = 10 V VIN = 15 V VIN = 20 V VIN = 24 V 2.98 0 25 NCP716BCSN300T1G CIN = COUT = 1 mF TA = 25°C 50 75 100 OUTPUT CURRENT (mA) 125 5.04 5.00 VIN = 6.0 V VIN = 10 V VIN = 15 V VIN = 20 V VIN = 24 V 4.98 0 DROPOUT VOLTAGE (mV) DROPOUT VOLTAGE (mV) 1000 600 400 200 0 120 25 50 75 100 OUTPUT CURRENT (mA) 125 150 Figure 6. Output Voltage vs. Output Current TA = −40°C TA = 25°C TA = 125°C 800 100 5.02 4.96 150 NCP716BCSN300T1G CIN = COUT = 1 mF 1000 80 NCP716BCSN500T1G CIN = COUT = 1 mF TA = 25°C Figure 5. Output Voltage vs. Output Current 1200 60 Figure 4. Output Voltage vs. Temperature 3.02 2.99 40 TEMPERATURE (°C) TEMPERATURE (°C) 2.97 20 NCP716BCSN500T1G CIN = COUT = 1 mF 800 TA = −40°C TA = 25°C TA = 125°C 600 400 200 0 0 25 50 75 100 OUTPUT CURRENT (mA) 125 150 0 Figure 7. Dropout Voltage vs. Output Current 25 50 75 100 OUTPUT CURRENT (mA) 125 150 Figure 8. Dropout Voltage vs. Output Current www.onsemi.com 5 NCP716BC TYPICAL CHARACTERISTICS 20 NCP716BCSN300T1G CIN = COUT = 1 mF TA = 25°C 16 QUIESCENT CURRENT (mA) GROUND CURRENT (mA) 20 IOUT = 0 IOUT = 50 mA IOUT = 150 mA 12 8 4 0 0 5 10 15 20 16 IOUT = 0 IOUT = 50 mA IOUT = 150 mA 12 8 4 0 25 NCP716BCSN500T1G CIN = COUT = 1 mF TA = 25°C 0 5 INPUT VOLTAGE (V) Figure 9. Ground Current vs. Input Voltage 4.5 7 3.0 NOISE DENSITY (mV/√Hz) NOISE DENSITY (mV/√Hz) 3.5 2.5 2.0 1.5 1.0 0.5 0 10 100 1K 10K 100K 5 3 2 1 0 1M 10 100 1K 10K 100K 1M FREQUENCY (Hz) Figure 12. Spectral Noise Density vs. Frequency 100 100 IOUT = 50 mA IOUT = 10 mA IOUT = 1 mA 60 40 NCP716BCSN300T1G VIN = 4 V + 200 mVpp modulation COUT = 10 mF 10 100 1K 10K IOUT = 50 mA IOUT = 10 mA IOUT = 1 mA 80 PSRR (dB) 80 PSRR (dB) 25 4 Figure 11. Spectral Noise Density vs. Frequency 0 20 NCP716BCSN500T1G VIN = 6 V CIN = COUT = 1 mF IOUT = 150 mA TA = 25°C 6 FREQUENCY (Hz) 20 15 Figure 10. Ground Current vs. Input Voltage NCP716BCSN300T1G VIN = 4 V CIN = COUT = 1 mF IOUT = 150 mA TA = 25°C 4.0 10 INPUT VOLTAGE (V) 60 40 NCP716BCSN500T1G VIN = 6 V + 200 mVpp modulation COUT = 10 mF 20 100K 1M 0 10 100 1K 10K 100K FREQUENCY (Hz) FREQUENCY (Hz) Figure 13. PSRR vs. Frequency Figure 14. PSRR vs. Frequency www.onsemi.com 6 1M NCP716BC TYPICAL CHARACTERISTICS Figure 15. Line Transient Response Figure 16. Line Transient Response Figure 17. Load Transient Response Figure 18. Load Transient Response Figure 19. Turn−On Response Figure 20. Turn−On Response www.onsemi.com 7 NCP716BC APPLICATIONS INFORMATION Power Dissipation and Heat sinking The NCP716BC is the member of new family of Wide Input Voltage Range Low Dropout Regulators which delivers Ultra Low Ground Current consumption, Good Noise and Power Supply Rejection Ratio Performance. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP716BC can handle is given by: Input Decoupling (CIN) It is recommended to connect at least 1.0 mF Ceramic X5R or X7R capacitor between IN and GND pin of the device. This capacitor will provide a low impedance path for any unwanted AC signals or Noise superimposed onto constant Input Voltage. The good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. Higher capacitance and lower ESR Capacitors will improve the overall line transient response. P D(MAX) + ƪTJ(MAX) * TAƫ (eq. 1) R qJA The power dissipated by the NCP716BC for given application conditions can be calculated from the following equations: P D [ V INǒI GND(I OUT)Ǔ ) I OUTǒV IN * V OUTǓ (eq. 2) or Output Decoupling (COUT) The NCP716BC does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. The device is designed to be stable with standard ceramics capacitors with values of 1.0 mF or greater up to 10 mF. The X5R and X7R types have the lowest capacitance variations over temperature thus they are recommended. V IN(MAX) [ P D(MAX) ) ǒV OUT I OUTǓ I OUT ) I GND (eq. 3) For reliable operation, junction temperature should be limited to +125°C maximum. Hints VIN and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCP716BC, and make traces as short as possible. ORDERING INFORMATION Voltage Option Marking Package Shipping† NCP716BCSN300T1G 3.0 V 7AA TSOP−5 (Pb−Free) 3000 / Tape & Reel NCP716BCSN330T1G 3.3 V 7AC TSOP−5 (Pb−Free) 3000 / Tape & Reel NCP716BCSN345T1G 3.45 V 7AM TSOP−5 (Pb−Free) 3000 / Tape & Reel NCP716BCSN500T1G 5.0 V 7AV TSOP−5 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 8 NCP716BC PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE N D 5X NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 B S 3 K DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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