NCP785AH120T1G

NCP785A Linear Regulator - Wide Input Voltage Range, Ultra-Low Iq, High PSRR 10mA www.onsemi.com The NCP785A is a high−performance linear regulator, offering a very wide operating input voltage range of up to 450 V DC, with an output current of up to 10 mA. Ideal for high input voltage applications such as industrial and home metering, home appliances. The NCP785A family offers ±5% initial accuracy, extremely high−power supply rejection ratio and ultra−low quiescent current. The NCP785A is optimized for high−voltage line and load transients, making this part ideal for harsh environment applications. The NCP785A is offered in fixed output voltage options 3.3 V, 5.0 V, 12 V and 15 V. SOT−89 package offers good thermal performance and help to minimize the solution size. MARKING DIAGRAM SOT−89 CASE 528AG A Y W XXXXX G Features • Wide Input Voltage Range: • • • • • • • • DC: Up to 450 V AC: 85 V to 260 V (half−wave rectifier and 2.2 mF capacitor) 10 mA Guaranteed Output Current Ultra Low Quiescent Current: Typ. 10 mA (VOUT ≤ 5 V) ±5% Accuracy Over Full Load, Line and Temperature Variations Ultra−high PSRR: 70 dB at 60 Hz, 90 dB at 100 kHz Stable with Ceramic Output Capacitor 22 mF MLCC Thermal Shutdown and Current Limit Protection Available in Thermally Enhanced SOT89−3 Package This is a Pb−Free Device 1 Tab AYW XXXXXG G 3 2 (Top Views) (Tab is connected to Pin 2) = Assembly Location = Year = Work Week = Specific Device Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Typical Applications • Industrial Applications, Home Appliances • Home Metering / Network Application • Off−line Power Supplies VIN 25 V − 450 V CIN 2.2 μF VIN VOUT NCP785A GND VOUT 3.3 V, 5 V, 12 V, 15 V VIN 85 VAC − 260 VAC COUT 22 μF CIN 2.2 μF/ 450 V VIN VOUT VOUT 3.3 V, 5 V, 12 V, 15 V NCP785A COUT GND 22 μF Figure 1. Typical Applications © Semiconductor Components Industries, LLC, 2014 October, 2019 − Rev. 2 1 Publication Order Number: NCP785A/D NCP785A VIN Thermal Shutdown VREF 1.25 V Current Limit + − + − VOUT GND NCP785A Figure 2. Simplified Internal Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin No. (SOT−89) Pin Name Description 1 VIN Supply Voltage Input. Connect 2.2 mF capacitor from VIN to GND. 2, Tab GND Ground connection. 3 VOUT Regulator Output. Connect 22 mF or larger MLCC capacitor from VOUT to GND. Table 2. ABSOLUTE MAXIMUM RATINGS Rating Input Voltage (Note 1) Output Voltage Maximum Junction Temperature Storage Temperature Symbol Value Unit VIN −0.3 to 700 V VOUT −0.3 to 18 V TJ(MAX) 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (All pins except HV pin no.1) (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Peak 650 V max 1 ms non repeated for 1 s 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latch−up Current Maximum Rating tested per JEDEC standard: JESD78. Table 3. THERMAL CHARACTERISTICS Rating Thermal Characteristics, SOT−89 Thermal Resistance, Junction−to−Air www.onsemi.com 2 Symbol Value Unit RqJA 79 °C/W NCP785A Table 4. ELECTRICAL CHARACTERISTICS, VOUT = 3.3 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 2.2 mF, COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 3) Parameter Test Conditions Symbol Min VIN 25 TJ = 25°C, Iout = 100 mA, 25 V ≤ Vin ≤ 450 V VOUT 3.1515 −40°C ≤ TJ ≤ 85°C, Iout = 100 mA, 25 V ≤ Vin ≤ 450 V VOUT Line Regulation 25 V ≤ Vin ≤ 450 V, Iout = 100 mA Load Regulation 100 mA ≤ IOUT ≤ 10 mA, Vin = 35 V Maximum Output Current (Note 4) 35 V ≤ Vin ≤ 450 V Quiescent Current IOUT = 0, 25 V ≤ Vin ≤ 450 V Ground Current (Note 4) 25 V ≤ Vin ≤ 450 V 0 < IOUT ≤ 10 mA Power Supply Rejection Ratio Vin = 340 VDC +1 Vpp modulation, Iout = 100 mA Noise f = 100 Hz to 100 kHz Vin = 340 VDC, Iout = 100 mA Thermal Shutdown Temperature (Note 5) Thermal Shutdown Hysteresis (Note 5) Operating Input Voltage DC Output Voltage Accuracy Max Unit 450 V 3.3 3.4485 V 3.135 3.3 3.465 V RegLINE −0.5 0.2 +0.5 % RegLOAD −1.0 0.6 +1.0 % IOUT 10.5 IQ Typ mA 7.5 IGND f = 1 kHz 14 mA 15 mA PSRR 70 dB VNOISE 240 mVrms Temperature increasing from TJ = +25°C TSD 145 °C Temperature falling from TSD TSDH − 10 − °C Table 5. ELECTRICAL CHARACTERISTICS, VOUT = 5.0 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 2.2 mF, COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 3) Symbol Min VIN 50 TJ = 25°C, Iout = 100 mA, 50 V ≤ Vin ≤ 450 V VOUT 4.775 −40°C ≤ TJ ≤ 85°C, Iout = 100 mA, 50 V ≤ Vin ≤ 450 V VOUT Line Regulation 50 V ≤ Vin ≤ 450 V, Iout = 100 mA Load Regulation 100 mA ≤ IOUT ≤ 10 mA, Vin = 55 V Maximum Output Current (Note 4) 55 V ≤ Vin ≤ 450 V Quiescent Current IOUT = 0, 50 V ≤ Vin ≤ 450 V Ground Current (Note 4) 50 V ≤ Vin ≤ 450 V 0 < IOUT ≤ 10 mA Power Supply Rejection Ratio Vin = 340 VDC +1 Vpp modulation, Iout = 100 mA Noise f = 100 Hz to 100 kHz Vin = 340 VDC, Iout = 100 mA Thermal Shutdown Temperature (Note 5) Thermal Shutdown Hysteresis (Note 5) Parameter Test Conditions Operating Input Voltage DC Output Voltage Accuracy Max Unit 450 V 5.0 5.225 V 4.75 5.0 5.25 V RegLINE −0.5 0.2 +0.5 % RegLOAD −1.0 0.62 +1.0 % IOUT 10.5 IQ Typ mA 16 IGND f = 1 kHz 21 mA 23 mA PSRR 70 dB VNOISE 300 mVrms Temperature increasing from TJ = +25°C TSD 145 °C Temperature falling from TSD TSDH − 10 − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 4. A proper heatsinking and/or low duty cycle pulse techniques are used to operate the device within the Safe Operating Area. 5. Guaranteed by design www.onsemi.com 3 NCP785A Table 6. ELECTRICAL CHARACTERISTICS, VOUT = 12 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 2.2 mF, COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 6) Parameter Test Conditions Symbol Min VIN 55 TJ = 25°C, Iout = 100 mA, 55 V ≤ Vin ≤ 450 V VOUT 11.460 −40°C ≤ TJ ≤ 85°C, Iout = 100 mA, 55 V ≤ Vin ≤ 450 V VOUT Line Regulation 55 V ≤ Vin ≤ 450 V, Iout = 100 mA Load Regulation 100 mA ≤ IOUT ≤ 10 mA, Vin = 65 V Maximum Output Current (Note 7) 55 V ≤ Vin ≤ 450 V Quiescent Current IOUT = 0, 55 V ≤ Vin ≤ 450 V Ground Current (Note 7) 55 V ≤ Vin ≤ 450 V 0 < IOUT ≤ 10 mA Power Supply Rejection Ratio Vin = 340 VDC +1 Vpp modulation, Iout = 100 mA Noise f = 100 Hz to 100 kHz Vin = 340 VDC, Iout = 100 mA Thermal Shutdown Temperature (Note 8) Thermal Shutdown Hysteresis (Note 8) Operating Input Voltage DC Output Voltage Accuracy Max Unit 450 V 12 12.540 V 11.4 12 12.6 V RegLINE −0.5 0.1 +0.5 %/V RegLOAD −1.0 0.66 +1.0 % IOUT 10.5 IQ Typ mA 17 IGND f = 1 kHz 22 mA 25 mA PSRR 70 dB VNOISE 420 mVrms Temperature increasing from TJ = +25°C TSD 145 °C Temperature falling from TSD TSDH − 10 − °C Table 7. ELECTRICAL CHARACTERISTICS, VOUT = 15 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 2.2 mF, COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 6) Symbol Min VIN 60 TJ = 25°C, Iout = 100 mA, 60 V ≤ Vin ≤ 450 V VOUT 14.325 −40°C ≤ TJ ≤ 85°C, Iout = 100 mA, 60 V ≤ Vin ≤ 450 V VOUT Line Regulation 60 V ≤ Vin ≤ 450 V, Iout = 100 mA Load Regulation 100 mA ≤ IOUT ≤ 10 mA, Vin = 65 V Maximum Output Current (Note 7) 65 V ≤ Vin ≤ 450 V Quiescent Current IOUT = 0, 60 V ≤ Vin ≤ 450 V Ground Current (Note 7) 60 V ≤ Vin ≤ 450 V 0 < IOUT ≤ 10 mA Power Supply Rejection Ratio Vin = 340 VDC +1 Vpp modulation, Iout = 100 mA Noise f = 100 Hz to 100 kHz Vin = 340 VDC, Iout = 100 mA Thermal Shutdown Temperature (Note 8) Thermal Shutdown Hysteresis (Note 8) Parameter Test Conditions Operating Input Voltage DC Output Voltage Accuracy Max Unit 450 V 15 15.675 V 14.25 15 15.75 V RegLINE −0.5 0.1 +0.5 %/V RegLOAD −1.0 0.66 +1.0 % IOUT 10.5 IQ Typ mA 18 IGND f = 1 kHz 22 mA 25 mA PSRR 70 dB VNOISE 500 mVrms Temperature increasing from TJ = +25°C TSD 145 °C Temperature falling from TSD TSDH − 10 − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 7. A proper heatsinking and/or low duty cycle pulse techniques are used to operate the device within the Safe Operating Area. 8. Guaranteed by design www.onsemi.com 4 NCP785A TYPICAL CHARACTERISTICS 3.310 OUTPUT VOLTAGE (V) 3.308 VIN = 450 V VIN = 250 V 3.307 NCP785AH33T1G 3.306 CIN = 2.2 mF COUT = 22 mF IOUT = 100 mA 3.305 3.304 −40 −20 0 20 40 CIN = 2.2 mF COUT = 22 mF IOUT = 100 mA 5.035 −20 0 20 40 60 80 Figure 4. Output Voltage vs. Temperature 15.060 VIN = 250 V VIN = 50 V VIN = 450 V VIN = 350 V NCP785AH12T1G CIN = 2.2 mF COUT = 22 mF IOUT = 100 mA 11.96 −20 0 20 40 VIN = 350 V 15.055 11.97 VIN = 150 V 15.045 VIN = 60 V 15.040 15.035 15.030 NCP785A150T1G 15.025 CIN = 2.2 mF COUT = 22 mF IOUT = 100 mA 15.020 60 VIN = 250 V VIN = 450 V 15.050 15.015 −40 80 −20 0 20 40 60 80 TEMPERATURE (°C) TEMPERATURE (°C) Figure 5. Output Voltage vs. Temperature Figure 6. Output Voltage vs. Temperature 3.3088 5.0485 3.3087 5.0475 3.3086 5.0465 3.3085 NCP785AH33T1G 3.3084 CIN = 2.2 mF COUT = 22 mF IOUT = 100 mA 3.3083 3.3082 NCP785AH50T1G Figure 3. Output Voltage vs. Temperature OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 5.040 TEMPERATURE (°C) 11.99 11.95 −40 VIN = 50 V 5.045 5.030 −40 80 VIN = 150 V 11.98 5.050 TEMPERATURE (°C) 12.00 OUTPUT VOLTAGE (V) 60 VIN = 100 V − 450 V OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 3.309 5.055 VIN = 350 V 0 50 100 150 200 250 300 350 5.0455 NCP785AH50T1G 5.0445 CIN = 2.2 mF COUT = 22 mF TA = 25°C IOUT = 100 mA 5.0435 400 450 5.0425 50 100 150 200 250 300 350 400 INPUT VOLTAGE (V) INPUT VOLTAGE (V) Figure 7. Output Voltage vs. Input Voltage Figure 8. Output Voltage vs. Input Voltage www.onsemi.com 5 450 NCP785A 11.985 15.050 11.980 15.048 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS 11.975 11.970 NCP785AH120T1G CIN = 2.2 mF COUT = 22 mF TA = 25°C IOUT = 100 mA 11.965 11.960 50 100 150 250 200 300 350 450 400 15.046 NCP785AH150T1G 15.044 CIN = 2.2 mF COUT = 22 mF TA = 25°C IOUT = 100 mA 15.042 15.040 50 100 150 200 250 400 450 Figure 10. Output Voltage vs. Input Voltage Figure 9. Output Voltage vs. Input Voltage 8.0 18 QUIESCENT CURRENT (mA) 7.8 QUIESCENT CURRENT (mA) 350 INPUT VOLTAGE (V) INPUT VOLTAGE (V) 7.6 7.4 TA = 85°C TA = 25°C 7.2 TA = −40°C 7.0 6.8 NCP785AH33T1G 6.6 CIN = 2.2 mF COUT = 22 mF IOUT = 0 6.4 6.2 6.0 300 0 50 100 150 200 250 300 350 400 17 TA = 85°C 16 TA = 25°C 15 14 CIN = 2.2 mF COUT = 22 mF IOUT = 0 13 12 450 TA = −40°C 50 100 150 200 NCP785AH50T1G 250 300 350 400 450 INPUT VOLTAGE (V) INPUT VOLTAGE (V) Figure 11. Quiescent Current vs. Input Voltage Figure 12. Quiescent Current vs. Input Voltage www.onsemi.com 6 NCP785A TYPICAL CHARACTERISTICS 23 19 18 TA = 25°C 17 16 TA = −40°C 15 CIN = 2.2 mF COUT = 22 mF IOUT = 0 14 13 NCP785AH120T1G 50 100 150 250 200 300 350 19 TA = −40°C 18 CIN = 2.2 mF COUT = 22 mF IOUT = 0 17 16 450 TA = 25°C 20 0 50 100 150 NCP785AH150T1G 250 200 300 350 400 450 Figure 13. Quiescent Current vs. Input Voltage Figure 14. Quiescent Current vs. Input Voltage VIN = 150 V 5.15 VIN = 50 V VIN = 25 V 3.30 3.29 VIN = 250 V 3.28 VIN = 350 V NCP785AH33T1G 3.27 VIN = 450 V CIN = 2.2 mF COUT = 22 mF TA = 25°C 3.26 0 1 2 3 4 5 6 7 8 9 5.10 5.05 VIN = 350 V VIN = 50 V NCP785AH50T1G 5.00 4.95 10 VIN = 100 V VIN = 200 V VIN = 450 V CIN = 2.2 mF COUT = 22 mF TA = 25°C 0 1 2 3 4 5 6 7 8 OUTPUT CURRENT (mA) Figure 15. Output Voltage vs. Output Current Figure 16. Output Voltage vs. Output Current 11.99 10 9 OUTPUT CURRENT (mA) 15.10 VIN = 150 V 11.98 VIN = 100 V VIN = 100 V 15.05 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 11.97 11.96 VIN = 55 V 11.95 11.94 11.93 VIN = 200 V NCP785AH120T1G 11.92 CIN = 2.2 mF COUT = 22 mF TA = 25°C 11.91 11.90 11.89 21 INPUT VOLTAGE (V) 3.31 3.25 400 TA = 85°C 22 INPUT VOLTAGE (V) 3.32 OUTPUT VOLTAGE (V) QUIESCENT CURRENT (mA) TA = 85°C OUTPUT VOLTAGE (V) QUIESCENT CURRENT (mA) 20 0 1 2 VIN = 300 V VIN = 350 V 3 4 5 6 7 9 VIN = 60 V 15.00 14.95 NCP785AH150T1G 14.90 14.80 10 VIN = 300 V CIN = 2.2 mF COUT = 22 mF TA = 25°C 14.85 VIN = 450 V 8 VIN = 200 V 0 2 VIN = 350 V 4 6 VIN = 450 V 8 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 17. Output Voltage vs. Output Current Figure 18. Output Voltage vs. Output Current www.onsemi.com 7 10 NCP785A TYPICAL CHARACTERISTICS 8 5.0 NCP785AH33T1G 4.0 CIN = 2.2 mF COUT = 22 mF IOUT = 100 mA VIN = 340 V TA = 25°C (mV/√Hz) 3.5 3.0 2.5 1.5 5 4 3 2 1.0 1 10 100 1K 10K 100K 0 1M 10 100 1K 10K 100K 1M FREQUENCY (Hz) FREQUENCY (Hz) Figure 19. Output Noise Density vs. Frequency Figure 20. Output Noise Density vs. Frequency 8 25 7 NCP785AH50T1G 6 NCP785AH150T1G 20 CIN = 2.2 mF COUT = 22 mF IOUT = 100 mA VIN = 340 V TA = 25°C 5 4 (mV/√Hz) (mV/√Hz) CIN = 2.2 mF COUT = 22 mF IOUT = 100 mA VIN = 340 V TA = 25°C 6 2.0 0.5 0 NCP785AH50T1G 7 (mV/√Hz) 4.5 3 2 CIN = 2.2 mF COUT = 22 mF IOUT = 100 mA VIN = 340 V TA = 25°C 15 10 5 1 0 10 100 1K 10K 100K 0 1M 10 100 1K 10K 100K 1M FREQUENCY (Hz) FREQUENCY (Hz) Figure 21. Output Noise Density vs. Frequency Figure 22. Output Noise Density vs. Frequency www.onsemi.com 8 NCP785A APPLICATION INFORMATION The typical application circuit for the NCP785A device is shown below. VIN 25 V − 450 V VIN VOUT 3.3 V, 5 V, 15 V VOUT NCP785A CIN 2.2 μF COUT 22 μF GND Figure 23. Typical Application Schematic Input Decoupling (C1) Layout Recommendations A 1 mF capacitor either ceramic or electrolytic is recommended and should be connected close to the input pin of NCP785A. Higher value 2.2 mF is necessary to sustain the required minimum input voltage at full load for AC voltage as low as 85 V with half wave rectifier. Please be sure the VIN and GND lines are sufficiently wide. When the impedance of these lines is high, there is a chance to pick up noise or to cause the malfunction of regulator. Set external components, especially the output capacitor, as close as possible to the circuit, and make leads as short as possible. Output Decoupling (C2) The NCP785A Regulator does not require any specific Equivalent Series Resistance (ESR). Thus capacitors exhibiting ESRs ranging from a few mW up to 0.5 W can be used safely. The minimum decoupling value is 22 mF. The regulator accepts ceramic chip capacitors as well as tantalum devices or low ESR electrolytic capacitors. Larger values improve noise rejection and load transient response. Thermal As power across the NCP785A increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design layout and used package. Mounting pad configuration on the PCB, the board material, and also the ambient temperature affect the rate of temperature rise for the part. This is stating that when the NCP785A has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power dissipation applications. ORDERING INFORMATION Part Number Output Voltage Marking NCP785AH33T1G 3.3 V AA NCP785AH50T1G 5V AC NCP785AH120T1G 12 V AJ NCP785AH150T1G 15 V AD Package Shipping† SOT−89 (Pb−Free) 1000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−89, 3 LEAD CASE 528AG ISSUE O DATE 04 MAR 2014 SCALE 2:1 A D E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS INCLUDES LEAD FINISH. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 5. DIMENSIONS L, L2, D2, AND H ARE MEASURED AT DATUM PLANE C. 6. CENTER LEAD CONTOUR MAY VARY WITHIN THE REGION DEFINED BY DIMENSION E. 7. DIMENSION D2 IS DEFINED AT ITS WIDEST POINT. H 1 2 3 DIM A b b1 c D D2 E e H L TOP VIEW c A 0.10 C C SIDE VIEW e b1 1 GENERIC MARKING DIAGRAM* e b 2 MILLIMETERS MIN MAX 1.40 1.60 0.38 0.47 0.46 0.55 0.40 0.44 4.40 4.60 1.60 1.90 2.40 2.60 1.50 BSC 4.05 4.25 0.89 1.20 L2 Y W 3 L X X Y = Year W = Work Week XX = Specific Device Code D2 B *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. BOTTOM VIEW RECOMMENDED MOUNTING FOOTPRINT* 2.00 PACKAGE OUTLINE 4.45 1.57 2X 1 0.50 2X 1.50 0.86 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON82692F SOT−89, 3 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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