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NCV4274CST33T3G

NCV4274CST33T3G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO261-4

  • 描述:

    IC REG LINEAR 3.3V 400MA SOT223

  • 数据手册
  • 价格&库存
NCV4274CST33T3G 数据手册
NCV4274C Regulator, 400 mA, Low Dropout Voltage Description The NCV4274C is a precision micro−power voltage regulator with an output current capability of 400 mA available in the DPAK, D2PAK and SOT−223 packages. The output voltage is accurate within ±2.0% with a maximum dropout voltage of 0.5 V with an input up to 40 V. Low quiescent current is a feature drawing only 125 mA with a 1 mA load. This part is ideal for automotive and all battery operated microprocessor equipment. The regulator is protected against reverse battery, short circuit, and thermal overload conditions. The device can withstand load dump transients making it suitable for use in automotive environments. www.onsemi.com MARKING DIAGRAMS 4 DPAK DT SUFFIX CASE 369C Features • • • • • • • • 3.3 V, 5.0 V, ±2.0% Output Options Low 125 mA Quiescent Current at 1 mA load current 400 mA Output Current Capability Fault Protection +60 V Peak Transient Voltage with Respect to GND S −42 V Reverse Voltage S Short Circuit S Thermal Overload Very Low Dropout Voltage NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices D2PAK DS SUFFIX CASE 418AF SOT−223 ST SUFFIX CASE 318E 1 Input 2, 4 Ground 3 Output 74C−xxG ALYWW x 1 2 3 NC V4274C−xx AWLYYWWG 1 Input 2, 4 Ground 3 Output AYW 74CxxG G 1 xx = 33 (3.3 V) = 50 (5.0 V) A = Assembly Location L, WL = Wafer Lot Y, YY = Year W, WW = Work Week G or G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 12 of this data sheet. © Semiconductor Components Industries, LLC, 2016 November, 2018 − Rev. 4 1 Publication Order Number: NCV4274C/D NCV4274C I Q Bandgap Refernece Current Limit and Saturation Sense − + Thermal Shutdown GND Figure 1. Block Diagram Pin Definitions and Functions Pin No. Symbol 1 I 2,4 GND 3 Q Function Input; Bypass directly at the IC with a ceramic capacitor to GND. Ground Output; Bypass with a capacitor to GND. ABSOLUTE MAXIMUM RATINGS Pin Symbol, Parameter I, Input−to−Regulator Symbol Condition Min Max Unit V Voltage VI −42 45 Current II Internally Limited Internally Limited I, Input peak Transient Voltage to Regulator with Respect to GND (Note 1) VI 60 V Q, Regulated Output Voltage VQ −1.0 40 V Current IQ Internally Limited Internally Limited GND, Ground Current IGND − 100 mA Junction Temperature Storage Temperature TJ TStg −40 −50 150 150 °C °C ESDHB 4 ESD Capability, Machine Model (Note 2) ESDMM 200 V ESD Capability, Charged Device Model (Note 2) ESDCDM 1 kV ESD Capability, Human Body Model (Note 2) VQ = VI kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Load Dump Test B (with centralized load dump suppression) according to ISO16750-2 standard. Guaranteed by design. Not tested in production. Passed Class C. 2. This device series incorporates ESD protection and is tested by the following methods: ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A114) ESD MM tested per AEC−Q100−003 (EIA/JESD22−A115) Field Induced Charge Device Model ESD characterization is not performed on plastic molded packages with body sizes
NCV4274CST33T3G 价格&库存

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