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NCV4276CDT50RKG

NCV4276CDT50RKG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO252-5

  • 描述:

    IC REG LINEAR 5V 400MA DPAK-5

  • 数据手册
  • 价格&库存
NCV4276CDT50RKG 数据手册
NCV4276C Voltage Regulator Low-Drop 400 mA The NCV4276C is a 400 mA output current integrated low dropout regulator family designed for use in harsh automotive environments. It includes wide operating temperature and input voltage ranges. The device is offered with 3.3 V, 5.0 V, and adjustable voltage versions available in 2% output voltage accuracy. It has a high peak input voltage tolerance and reverse input voltage protection. It also provides overcurrent protection, overtemperature protection and inhibit for control of the state of the output voltage. The NCV4276C family is available in DPAK and D2PAK surface mount packages. The output is stable over a wide output capacitance and ESR range. The NCV4276C has improved startup behavior during input voltage transients. The NCV4276C is pin for pin compatible with NCV4276B. www.onsemi.com MARKING DIAGRAMS 1 DPAK 5−PIN DT SUFFIX CASE 175AA 5 1 D2PAK 5−PIN DS SUFFIX CASE 936A Features • 3.3 V, 5.0 V, and Adjustable Voltage Version (from 2.5 V to 20 V) • • • • • • • ±2% Output Voltage 400 mA Output Current 500 mV (max) Dropout Voltage (5.0 V Output) Inhibit Input Very Low Current Consumption Fault Protection ♦ +45 V Peak Transient Voltage ♦ −42 V Reverse Voltage ♦ Short Circuit ♦ Thermal Overload NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices 76CXXG ALYWW 1 5 NC V4276C−XX AWLYWWG 1 *Tab is connected to Pin 3 on all packages. A WL, L Y WW G XX = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Device = 33 (3.3 V) = 50 (5.0 V) = AJ (Adj. Voltage) ORDERING INFORMATION See detailed ordering and shipping information in the ordering information section on page 14 of this data sheet. © Semiconductor Components Industries, LLC, 2014 October, 2019 − Rev. 1 1 Publication Order Number: NCV4276C/D NCV4276C I Q Bandgap Reference Error Amplifier Current Limit and Saturation Sense − + Thermal Shutdown INH GND NC Figure 1. NCV4276C Block Diagram I Q Bandgap Reference Error Amplifier Current Limit and Saturation Sense − + Thermal Shutdown INH GND VA Figure 2. NCV4276C Adjustable Block Diagram PIN FUNCTION DESCRIPTION Pin No. Symbol 1 I Description 2 INH Inhibit; Set low−to inhibit. 3 GND Ground; Pin 3 internally connected to heatsink. 4 NC / VA Not connected for fixed voltage version / Voltage Adjust Input for adjustable voltage version; use an external voltage divider to set the output voltage 5 Q Output: Bypass with a capacitor to GND. See Figures 3 to 8 and Regulator Stability Considerations section. Input; Battery Supply Input Voltage. www.onsemi.com 2 NCV4276C MAXIMUM RATINGS Rating Symbol Min Max Unit Input Voltage VI −42 45 V Input Peak Transient Voltage VI − 45 V Inhibit INH Voltage VINH −42 45 V Voltage Adjust Input VA VVA −0.3 10 V Output Voltage VQ −1.0 40 V Ground Current Iq − 100 mA Input Voltage Operating Range (Note 1) VI VQ + 0.5 V or 4.5 V (Note 2) 40 V − − − 4.0 250 1.25 − − − kV V kV Junction Temperature TJ −40 150 °C Storage Temperature Tstg −50 150 °C ESD Susceptibility (Human Body Model) (Machine Model) (Charged Device Model) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 2. Minimum VI = 4.5 V or (VQ + 0.5 V), whichever is higher. LEAD TEMPERATURE SOLDERING REFLOW (Note 3) Lead Temperature Soldering Reflow (SMD styles only), Leaded, 60−150 s above 183, 30 s max at peak Reflow (SMD styles only), Lead Free, 60−150 s above 217, 40 s max at peak Wave Solder (through hole styles only), 12 sec max TSLD − − − 240 265 310 °C 3. Per IPC / JEDEC J−STD−020C. THERMAL CHARACTERISTICS Characteristic Test Conditions (Typical Value) Unit DPAK 5−PIN PACKAGE Min Pad Board (Note 4) 1, Pad Board (Note 5) Junction−to−Tab (psi−JLx, yJLx) 3.8 4.3 C/W Junction−to−Ambient (RqJA, qJA) 75.1 58.5 C/W 0.4 sq. in. Spreader Board (Note 6) 1.2 sq. in. Spreader Board (Note 7) Junction−to−Tab (psi−JLx, yJLx) 5.4 5.4 C/W Junction−to−Ambient (RqJA, qJA) 54.2 43.3 C/W D2PAK 5−PIN PACKAGE 4. 5. 6. 7. 1 oz. copper, 0.26 inch2 (168 mm2) copper area, 0.062″ thick FR4. 1 oz. copper, 1.14 inch2 (736 mm2) copper area, 0.062″ thick FR4. 1 oz. copper, 0.373 inch2 (241 mm2) copper area, 0.062″ thick FR4. 1 oz. copper, 1.222 inch2 (788 mm2) copper area, 0.062″ thick FR4. www.onsemi.com 3 NCV4276C ELECTRICAL CHARACTERISTICS (VI = 13.5 V; −40°C < TJ < 150°C; unless otherwise noted.) Characteristic Symbol Test Conditions Min Typ Max Unit OUTPUT Output Voltage, 5.0 V Version VQ 5.0 mA < IQ < 400 mA, 6.0 V < VI < 28 V 4.9 5.0 5.1 V Output Voltage, 5.0 V Version VQ 5.0 mA < IQ < 200 mA, 6.0 V < VI < 40 V 4.9 5.0 5.1 V Output Voltage, 3.3 V Version VQ 5.0 mA < IQ < 400 mA, 4.5 V < VI < 28 V 3.234 3.3 3.366 V Output Voltage, 3.3 V Version VQ 5.0 mA < IQ < 200 mA, 4.5 V < VI < 40 V 3.234 3.3 3.366 V AVQ 5.0 mA < IQ < 400 mA VQ+1 < VI < 40 V VI > 4.5 V −2% − +2% V 400 600 1100 mA Output Voltage, Adjustable Version Output Current Limitation IQ VQ = 90% VQTYP (VQTYP = 2.5 V for ADJ version) Quiescent Current (Sleep Mode) Iq = II − IQ Iq VINH = 0 V − − 10 mA Quiescent Current, Iq = II − IQ Iq IQ = 1.0 mA − 95 200 mA Quiescent Current, Iq = II − IQ Iq IQ = 250 mA − 5 15 mA Quiescent Current, Iq = II − IQ Iq IQ = 400 mA − 10 35 mA IQ = 250 mA, VDR = VI − VQ VI > 4.5 V − 250 500 mV IQ = 250 mA (Note 8) − 250 500 mV IQ = 5.0 mA to 400 mA − 3.0 20 mV DVI = 12 V to 32 V, IQ = 5.0 mA − 4.0 15 mV fr = 100 Hz, Vr = 0.5 VPP − 70 − dB Dropout Voltage, VDR Adjustable Version Dropout Voltage (5.0 V Version) VDR Load Regulation DVQ,LO Line Regulation DVQ Power Supply Ripple Rejection PSRR INHIBIT Inhibit Voltage, Output High VINH VQ w VQMIN − 2.3 2.8 V Inhibit Voltage, Output Low (Off) VINH VQ v 0.1 V 1.8 2.2 − V Input Current IINH VINH = 5.0 V 5.0 10 20 mA TSD IQ = 5.0 mA 150 − 210 °C THERMAL SHUTDOWN Thermal Shutdown Temperature (Note 9) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Measured when the output voltage VQ has dropped 100 mV from the nominal valued obtained at V = 13.5 V. 9. Guaranteed by design, not tested in production. www.onsemi.com 4 NCV4276C 5.5 − 45 V Input II CI1 1.0 mF I 1 CI2 100 nF CQ 22 mF NCV4276C INH 2 IINH 4 3 Output IQ 5 Q NC RL GND Figure 3. Applications Circuit; Fixed Voltage Version VQ = [(R1 + R2) * Vref] / R2 Input II CI1 1.0 mF I 1 CI2 100 nF 2 4 3 Output IQ CQ 22 mF NCV4276C INH IINH 5 Q Cb* R1 VA GND RL R2 Cb* − Required if usage of low ESR output capacitor CQ is demand, see Regulator Stability Considerations section Figure 4. Applications Circuit; Adjustable Voltage Version www.onsemi.com 5 NCV4276C TYPICAL PERFORMANCE CHARACTERISTICS 100 100 Unstable Region Unstable Region 10 ESR (W) ESR (W) 10 1 Stable Region 1 Stable Region 0.1 0.1 CQ = 10 mF 0.01 0 50 150 200 250 100 300 IQ, OUTPUT CURRENT (mA) 350 CQ = 22 mF 0.01 400 0 Figure 5. Output Stability with Output Capacitor ESR, Fixed Versions (5.0 V and 3.3 V) 10 Unstable Region 50 100 150 200 250 300 IQ, OUTPUT CURRENT (mA) 350 400 Figure 6. Output Stability with Output Capacitor ESR, Fixed Versions (5.0 V and 3.3 V) 1000 Cb capacitor not connected Cb capacitor not connected Unstable Region 100 CQ = 22 mF Stable Region 0.1 ESR (W) ESR (W) 1 CQ = 22 mF VQ = 2.5 V 0 50 100 150 200 250 300 IQ, OUTPUT CURRENT (mA) Stable Region 1 VQ = 6 V VQ = 12 V 0.1 Unstable Region 0.01 10 350 0.01 400 Figure 7. Output Stability with Output Capacitor ESR, Adjustable Version Unstable Region 0 50 100 150 200 250 300 IQ, OUTPUT CURRENT (mA) 350 400 Figure 8. Output Stability with Output Capacitor ESR, Adjustable Version www.onsemi.com 6 NCV4276C TYPICAL PERFORMANCE CHARACTERISTICS − Fixed Versions 3.36 VI = 13.5 V RL = 1 kW VQ, OUTPUT VOLTAGE (V) VQ, OUTPUT VOLTAGE (V) 5.10 5.05 5.00 4.95 4.90 −40 0 40 80 120 3.32 3.30 3.28 3.26 3.24 −40 160 120 6 TJ = 25°C RL = 20 W 8 6 4 2 0 160 Figure 10. Output Voltage vs. Junction Temperature, 3.3 V Version 10 5 15 20 30 25 35 5 4 3 2 1 0 40 TJ = 25°C RL = 20 W 0 5 10 15 20 25 30 35 40 VI, INPUT VOLTAGE (V) VI, INPUT VOLTAGE (V) Figure 11. Quiescent Current vs. Input Voltage, 5.0 V Version Figure 12. Quiescent Current vs. Input Voltage, 3.3 V Version 4 6 5 VQ, OUTPUT VOLTAGE (V) VQ, OUTPUT VOLTAGE (V) 80 TJ, JUNCTION TEMPERATURE (°C) 10 4 3 TJ = 25°C RL = 20 W 2 1 0 40 Figure 9. Output Voltage vs. Junction Temperature, 5.0 V Version Iq, QUIESCENT CURRENT (mA) Iq, QUIESCENT CURRENT (mA) 0 TJ, JUNCTION TEMPERATURE (°C) 12 0 VI = 13.5 V RL = 660 W 3.34 0 1 2 3 4 5 6 7 8 9 3 2 1 0 10 TJ = 25°C RL = 20 W 0 1 2 3 4 5 6 7 8 9 VI, INPUT VOLTAGE (V) VI, INPUT VOLTAGE (V) Figure 13. Output Voltage vs. Input Voltage, 5.0 V Version Figure 14. Output Voltage vs. Input Voltage, 3.3 V Version www.onsemi.com 7 10 NCV4276C TYPICAL PERFORMANCE CHARACTERISTICS − Fixed Versions 0.8 0.6 1.2 II, INPUT CURRENT (mA) II, INPUT CURRENT (mA) 1.6 0.8 0.4 0 −0.4 RL = 6.8 kW TJ = 25°C −0.8 −1.2 −50 −40 −30 −20 −10 0 10 20 30 40 −0.4 RL = 6.8 kW TJ = 25°C −0.6 0 10 20 30 40 VI, INPUT VOLTAGE (V) Figure 15. Input Current vs. Input Voltage, 5.0 V Version Figure 16. Input Current vs. Input Voltage, 3.3 V Version 50 700 TJ = 125°C IQ, OUTPUT CURRENT (mA) VDR, DROPOUT VOLTAGE (mV) −0.2 −1.0 −50 −40 −30 −20 −10 50 300 250 TJ = 25°C 200 150 100 50 0 50 100 150 200 250 300 350 600 500 400 300 200 TJ = 25°C VQ = 0 V 100 0 400 0 5 10 15 20 25 30 35 40 IQ, OUTPUT CURRENT (mA) VI, INPUT VOLTAGE (V) Figure 17. Dropout Voltage vs. Output Current, Only 5 V Version Figure 18. Maximum Output Current vs. Input Voltage 45 0.5 18 16 Iq, QUIESCENT CURRENT (mA) Iq, QUIESCENT CURRENT (mA) 0 VI, INPUT VOLTAGE (V) 350 VI = 13.5 V TJ = 25°C 14 12 10 8 6 4 2 0 0.2 −0.8 400 0 0.4 0 100 200 300 400 500 0.3 0.2 0.1 0 600 VI = 13.5 V TJ = 25°C 0.4 0 10 20 30 40 IQ, OUTPUT CURRENT (mA) IQ, OUTPUT CURRENT (mA) Figure 19. Quiescent Current vs. Output Current (High Load) Figure 20. Quiescent Current vs. Output Current (Low Load) www.onsemi.com 8 50 NCV4276C TYPICAL PERFORMANCE CHARACTERISTICS − Adjustable Version 5.0 2.54 VI = 13.5 V RL = 500 W 2.53 Iq, QUIESCENT CURRENT (mA) VQ, OUTPUT VOLTAGE (V) 2.55 2.52 2.51 2.50 2.49 2.48 2.47 2.46 2.45 −40 0 40 80 120 160 4.5 TJ = 25°C RL = 20 W 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 TJ, JUNCTION TEMPERATURE (°C) Figure 21. Output Voltage vs. Junction Temperature 10 15 20 25 30 VI, INPUT VOLTAGE (V) 35 40 Figure 22. Quiescent Current vs. Input Voltage 3 0.6 II, INPUT CURRENT (mA) VQ, OUTPUT VOLTAGE (V) 5 2 1 TJ = 25°C RL = 20 W 1 2 4 6 3 5 7 VI, INPUT VOLTAGE (V) 8 0.2 0 −0.2 −0.4 −0.6 TJ = 25°C RL = 6.8 kW −0.8 −1.0 −50 −40 −30 −20 −10 0 0 0.4 9 10 0 10 20 30 40 VI, INPUT VOLTAGE (V) Figure 23. Output Voltage vs. Input Voltage Figure 24. Input Current vs. Input Voltage www.onsemi.com 9 50 NCV4276C TYPICAL PERFORMANCE CHARACTERISTICS − Adjustable Version 700 350 IQ, OUTPUT CURRENT (mA) VDR, DROPOUT VOLTAGE (mV) 400 TJ = 125°C 300 250 TJ = 25°C 200 150 100 600 500 400 300 200 TJ = 25°C VQ = 0 V 100 50 0 0 50 100 150 200 250 300 IQ, OUTPUT CURRENT (mA) 350 0 400 5 0 18 35 40 45 0.5 16 Iq, QUIESCENT CURRENT (mA) Iq, QUIESCENT CURRENT (mA) 15 25 20 30 VI, INPUT VOLTAGE (V) Figure 26. Maximum Output Current vs. Input Voltage Figure 25. Dropout Voltage vs. Output Current, Output Voltage set to 5.0 V TJ = 25°C VI = 13.5 V 14 12 10 8 6 4 2 0 10 0 100 200 300 400 500 0.3 0.2 0.1 0 600 TJ = 25°C VI = 13.5 V 0.4 0 10 20 30 40 IQ, OUTPUT CURRENT (mA) IQ, OUTPUT CURRENT (mA) Figure 27. Quiescent Current vs. Output Current (High Load) Figure 28. Quiescent Current vs. Output Current (Low Load) www.onsemi.com 10 50 NCV4276C Circuit Description The NCV4276C is an integrated low dropout regulator that provides a regulated voltage at 400 mA to the output. It is enabled with an input to the inhibit pin. The regulator voltage is provided by a PNP pass transistor controlled by an error amplifier with a bandgap reference, which gives it the lowest possible dropout voltage. The output current capability is 400 mA, and the base drive quiescent current is controlled to prevent oversaturation when the input voltage is low or when the output is overloaded. The regulator is protected by both current limit and thermal shutdown. Thermal shutdown occurs above 150°C to protect the IC during overloads and extreme ambient temperatures. Minimum ESR for CQ = 10 mF and 22 mF is native ESR of ceramic capacitor with which the fixed output voltage devices are performing stable. Murata ceramic capacitors were used, GCM32ER71E106KA57 (10 mF, 25V, X7R, 1210), GRM32ER71E226ME15 (22 mF, 25V, X7R, 1210). Calculating Bypass Capacitor If usage of low ESR ceramic capacitors is demand in case of Adjustable Regulator, connect the bypass capacitor Cb between Voltage Adjust pin and Q pin according to Applications circuit at Figure 4. Parallel combination of bypass capacitor Cb with the feedback resistor R1 contributes in the device transfer function as an additional zero and affects the device loop stability, therefore its value must be optimized. Attention to the Output Capacitor value and its ESR must be paid. See also Stability in High Speed Linear LDO Regulators Application Note, AND8037/D for more information. Optimal value of bypass capacitor is given by following expression Regulator The error amplifier compares the reference voltage to a sample of the output voltage (VQ) and drives the base of a PNP series pass transistor via a buffer. The reference is a bandgap design to give it a temperature−stable output. Saturation control of the PNP is a function of the load current and input voltage. Oversaturation of the output power device is prevented, and quiescent current in the ground pin is minimized. See Figure 4, Test Circuit, for circuit element nomenclature illustration. Cb + 2 p 1 fz R1 @ (F) where R1 = the upper feedback resistor fz = the frequency of the zero added into the device transfer function by R1 and Cb external components. Set the R1 resistor according to output voltage requirement. Chose the fz with regard on the output capacitance CQ, refer to the table below. Regulator Stability Considerations The input capacitors (CI1 and CI2) are necessary to stabilize the input impedance to avoid voltage line influences. Using a resistor of approximately 1.0 W in series with CI2 can stop potential oscillations caused by stray inductance and capacitance. The output capacitor helps determine three main characteristics of a linear regulator: startup delay, load transient response and loop stability. The capacitor value and type should be based on cost, availability, size and temperature constraints. The aluminum electrolytic capacitor is the least expensive solution, but, if the circuit operates at low temperatures (−25°C to −40°C), both the value and ESR of the capacitor will vary considerably. The capacitor manufacturer’s data sheet usually provides this information. The value for the output capacitor CQ, shown in Figure 3, should work for most applications; see also Figures 5 to 8 for output stability at various load and Output Capacitor ESR conditions. Stable region of ESR in Figures 5 to 8 shows ESR values at which the LDO output voltage does not have any permanent oscillations at any dynamic changes of output load current. Marginal ESR is the value at which the output voltage waving is fully damped during four periods after the load change and no oscillation is further observable. ESR characteristics were measured with ceramic capacitors and additional series resistors to emulate ESR. Low duty cycle pulse load current technique has been used to maintain junction temperature close to ambient temperature. CQ (mF) 10 22 47 fz Range (kHz) 16 − 18 11 − 18 8 − 18 Ceramic capacitors and its part numbers listed bellow have been used as low ESR output capacitors CQ from the table above to define the frequency ranges of additional zero required for stability. GCM32ER71E106KA57 (10 mF, 25V, X7R, 1210) GRM32ER71E226ME15 (22 mF, 25V, X7R, 1210) GRM32ER61C476ME15 (47 mF, 16 V, X5R, 1210) Inhibit Input The inhibit pin is used to turn the regulator on or off. By holding the pin down to a voltage less than 1.8 V, the output of the regulator will be turned off. When the voltage on the Inhibit pin is greater than 2.8 V, the output of the regulator will be enabled to power its output to the regulated output voltage. The inhibit pin may be connected directly to the input pin to give constant enable to the output regulator. Setting the Output Voltage (Adjustable Version) The output voltage range of the adjustable version can be set between 2.5 V and 20 V. This is accomplished with an external resistor divider feeding back the voltage to the IC back to the error amplifier by the voltage adjust pin VA. www.onsemi.com 11 NCV4276C In some cases, none of the packages will be sufficient to dissipate the heat generated by the IC, and an external heatsink will be required. The internal reference voltage is set to a temperature stable reference of 2.5 V. The output voltage is calculated from the following formula. Ignoring the bias current into the VA pin: VI Use R2 < 50 k to avoid significant voltage output errors due to VA bias current. Connecting VA directly to Q without R1 and R2 creates an output voltage of 2.5 V. Designers should consider the tolerance of R1 and R2 during the design phase. The input voltage range for operation (pin 1) of the adjustable version is between (VQ + 0.5 V) and 40 V. Internal bias requirements dictate a minimum input voltage of 4.5 V. The dropout voltage for output voltages less than 4.0 V is (4.5 V − VQ). PD(max) + [VI(max) * VQ(min)] IQ(max) VQ Iq Figure 29. Single Output Regulator with Key Performance Parameters Labeled Heatsinks A heatsink effectively increases the surface area of the package to improve the flow of heat away from the IC and into the surrounding air. Each material in the heat flow path between the IC and the outside environment will have a thermal resistance. Like series electrical resistances, these resistances are summed to determine the value of RqJA: (1) ) VI(max)Iq Iq SMART REGULATOR® } Control Features Calculating Power Dissipation in a Single Output Linear Regulator The maximum power dissipation for a single output regulator (Figure 29) is: where VI(max) VQ(min) IQ(max) IQ II VQ + [(R1 ) R2) * Vref]ńR2 RqJA + RqJC ) RqCS ) RqSA where RqJC is the junction−to−case thermal resistance, RqCS is the case−to−heatsink thermal resistance, RqSA is the heatsink−to−ambient thermal resistance. is the maximum input voltage, is the minimum output voltage, is the maximum output current for the application, is the quiescent current the regulator consumes at IQ(max). RqJC appears in the package section of the data sheet. Like RqJA, it too is a function of package type. RqCS and RqSA are functions of the package type, heatsink and the interface between them. These values appear in data sheets of heatsink manufacturers. Thermal, mounting, and heatsinking considerations are discussed in the ON Semiconductor application note AN1040/D. Once the value of PD(max) is known, the maximum permissible value of RqJA can be calculated: o T RqJA + 150 C * A PD (3) (2) The value of RqJA can then be compared with those in the package section of the data sheet. Those packages with RqJA less than the calculated value in Equation 2 will keep the die temperature below 150°C. www.onsemi.com 12 110 RqJA, THERMAL RESISTANCE (°C/W) RqJA, THERMAL RESISTANCE (°C/W) NCV4276C 100 90 80 1 oz 70 2 oz 60 50 40 0 100 200 300 400 500 600 700 80 75 70 65 60 1 oz 55 50 2 oz 45 40 35 30 0 800 COPPER SPREADER AREA (mm2) 100 200 300 400 500 600 700 800 COPPER SPREADER AREA (mm2) Figure 30. RqJA vs. Copper Spreader Area, DPAK 5−Lead Figure 31. RqJA vs. Copper Spreader Area, D2PAK 5−Lead 100 Cu Area 168 mm2 R(t) (°C/W) Cu Area 736 mm2 10 1 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 32. Single−Pulse Heating Curves, DPAK 5−Lead 100 R(t) (°C/W) Cu Area 241 mm2 Cu Area 788 mm2 10 1 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 33. Single−Pulse Heating Curves, D2PAK 5−Lead www.onsemi.com 13 10 100 1000 NCV4276C 100 RqJA, 736 mm2 (°C/W) 50% Duty Cycle 20% 10 10% 5% 1 2% 1% Non−normalized Response Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 PULSE TIME (sec) Figure 34. Duty Cycle for 1, Spreader Boards, DPAK 5−Lead 100 RqJA, 788 mm2 (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% Non−normalized Response Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 PULSE TIME (sec) Figure 35. Duty Cycle for 1, Spreader Boards, D2PAK 5−Lead ORDERING INFORMATION Device Output Voltage Accuracy Output Voltage NCV4276CDT33RKG 3.3 V NCV4276CDS33R4G NCV4276CDT50RKG NCV4276CDS50R4G 5.0 V 2% NCV4276CDTADJRKG NCV4276CDTADJT5G Adjustable NCV4276CDSADJR4G Package Shipping† DPAK, 5−Pin (Pb−Free) 2500 / Tape & Reel D2PAK, 5−Pin (Pb−Free) 800 / Tape & Reel DPAK, 5−Pin (Pb−Free) 2500 / Tape & Reel D2PAK, 5−Pin (Pb−Free) 800 / Tape & Reel DPAK, 5−Pin (Pb−Free) 2500 / Tape & Reel DPAK, 5−Pin (Pb−Free) 2500 / Tape & Reel D2PAK, 5−Pin (Pb−Free) 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 14 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK−5, CENTER LEAD CROP CASE 175AA ISSUE B DATE 15 MAY 2014 SCALE 1:1 −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R R1 Z A S 12 3 4 5 U K F J L H D G 5 PL 0.13 (0.005) M T 2.2 0.086 0.34 5.36 0.013 0.217 5.8 0.228 10.6 0.417 0.8 0.031 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12855D INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.020 0.028 0.018 0.023 0.024 0.032 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.045 BSC 0.170 0.190 0.185 0.210 0.025 0.040 0.020 −−− 0.035 0.050 0.155 0.170 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.51 0.71 0.46 0.58 0.61 0.81 4.56 BSC 0.87 1.01 0.46 0.58 2.60 2.89 1.14 BSC 4.32 4.83 4.70 5.33 0.63 1.01 0.51 −−− 0.89 1.27 3.93 4.32 GENERIC MARKING DIAGRAMS* RECOMMENDED SOLDERING FOOTPRINT* 6.4 0.252 DIM A B C D E F G H J K L R R1 S U V Z XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete XXXXXX A L Y WW G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DPAK−5 CENTER LEAD CROP PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 5−LEAD CASE 936A−02 ISSUE E DATE 28 JUL 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxx A WL Y WW G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASH01006A D2PAK 5−LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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