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NCV4276DT50RKG

NCV4276DT50RKG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TO252-5

  • 描述:

    IC REG LINEAR 5V 400MA DPAK-5

  • 数据手册
  • 价格&库存
NCV4276DT50RKG 数据手册
NCV4276, NCV4276A 400 mA Low-Drop Voltage Regulator The NCV4276 is a 400 mA output current integrated low dropout regulator family designed for use in harsh automotive environments. It includes wide operating temperature and input voltage ranges. The device is offered with fixed output voltage options of 1.8 V and 2.5 V with 4% output voltage accuracy while the 3.3 V, 5.0 V, and adjustable voltage versions are available either in 2% or 4% output voltage accuracy. It has a high peak input voltage tolerance and reverse input voltage protection. It also provides overcurrent protection, overtemperature protection and inhibit for control of the state of the output voltage. The NCV4276 family is available in DPAK and D2PAK surface mount packages. The output is stable over a wide output capacitance and ESR range. Features • 2.5 V and 1.8 V ±4% Output Voltage • 3.3 V, 5.0 V, and Adjustable Voltage Version (from 2.5 V to 20 V) • • • • • • • ±4% or ±2% Output Voltage 400 mA Output Current 500 mV (max) Dropout Voltage (5.0 V Output) Inhibit Input Very Low Current Consumption Fault Protection ♦ +45 V Peak Transient Voltage ♦ −42 V Reverse Voltage ♦ Short Circuit ♦ Thermal Overload NCV Prefix for Automotive and Other Applications Requiring Site and Control Changes These are Pb−Free Devices http://onsemi.com 1 5 DPAK 5−PIN DT SUFFIX CASE 175AA 1 5 D2PAK 5−PIN DS SUFFIX CASE 936A DEVICE MARKING INFORMATION See general marking information in the device marking section on page 22 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information in the ordering information section on page 23 of this data sheet. © Semiconductor Components Industries, LLC, 2011 June, 2011 − Rev. 24 1 Publication Order Number: NCV4276/D NCV4276, NCV4276A I Q Bandgap Reference Error Amplifier Current Limit and Saturation Sense − + Thermal Shutdown INH GND NC Figure 1. 4276 Block Diagram I Q Bandgap Reference Error Amplifier Current Limit and Saturation Sense − + Thermal Shutdown INH GND VA Figure 2. 4276 Adjustable Block Diagram http://onsemi.com 2 NCV4276, NCV4276A PIN FUNCTION DESCRIPTION Pin No. Symbol Description 1 I 2 INH Inhibit; Set low−to inhibit. 3 GND Ground; Pin 3 internally connected to heatsink. 4 NC / VA Not connected for fixed voltage version / Voltage Adjust Input for adjustable voltage version; use an external voltage divider to set the output voltage 5 Q Output: Bypass with a capacitor to GND. See Figures 3 to 8 and Regulator Stability Considerations section. Input; Battery Supply Input Voltage. MAXIMUM RATINGS* Rating Symbol Min Max Unit Input Voltage VI −42 45 V Input Peak Transient Voltage VI − 45 V Inhibit INH Voltage VINH −42 45 V Voltage Adjust Input VA VVA −0.3 10 V Output Voltage VQ −1.0 40 V Ground Current Iq − 100 mA Input Voltage Operating Range VI VQ + 0.5 V or 4.5 V (Note 1) 40 V − − − 4.5 250 1.25 − − − kV V kV Junction Temperature TJ −40 150 °C Storage Temperature Tstg −50 150 °C ESD Susceptibility (Human Body Model) (Machine Model) (Charged Device Model) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *During the voltage range which exceeds the maximum tested voltage of I, operation is assured, but not specified. Wider limits may apply. Thermal dissipation must be observed closely. LEAD TEMPERATURE SOLDERING REFLOW (Note 2) Lead Temperature Soldering Reflow (SMD styles only), Leaded, 60−150 s above 183, 30 s max at peak Reflow (SMD styles only), Lead Free, 60−150 s above 217, 40 s max at peak Wave Solder (through hole styles only), 12 sec max TSLD − − − 240 265 310 °C THERMAL CHARACTERISTICS Characteristic Test Conditions (Typical Value) Unit DPAK 5−PIN PACKAGE Min Pad Board (Note 3) 1, Pad Board (Note 4) Junction−to−Tab (psi−JLx, yJLx) 4.2 4.7 C/W Junction−to−Ambient (RqJA, qJA) 100.9 46.8 C/W 0.4 sq. in. Spreader Board (Note 5) 1.2 sq. in. Spreader Board (Note 6) D2PAK 5−PIN PACKAGE Junction−to−Tab (psi−JLx, yJLx) 3.8 4.0 C/W Junction−to−Ambient (RqJA, qJA) 74.8 41.6 C/W 1. 2. 3. 4. 5. 6. Minimum VI = 4.5 V or (VQ + 0.5 V), whichever is higher. Per IPC / JEDEC J−STD−020C. 1 oz. copper, 0.26 inch2 (168 mm2) copper area, 0.062″ thick FR4. 1 oz. copper, 1.14 inch2 (736 mm2) copper area, 0.062″ thick FR4. 1 oz. copper, 0.373 inch2 (241 mm2) copper area, 0.062″ thick FR4. 1 oz. copper, 1.222 inch2 (788 mm2) copper area, 0.062″ thick FR4. http://onsemi.com 3 NCV4276, NCV4276A ELECTRICAL CHARACTERISTICS (VI = 13.5 V; −40°C < TJ < 150°C; unless otherwise noted.) NCV4276 Characteristic Symbol Test Conditions NCV4276A Min Typ Max Min Typ Max Unit OUTPUT Output Voltage, 5.0 V Version VQ 5.0 mA < IQ < 400 mA, 6.0 V < VI < 28 V 4.8 5.0 5.2 4.9 5.0 5.1 V Output Voltage, 5.0 V Version VQ 5.0 mA < IQ < 200 mA, 6.0 V < VI < 40 V 4.8 5.0 5.2 4.9 5.0 5.1 V Output Voltage, 3.3 V Version VQ 5.0 mA < IQ < 400 mA, 4.5 V < VI < 28 V 3.168 3.3 3.432 3.234 3.3 3.366 V Output Voltage, 3.3 V Version VQ 5.0 mA < IQ < 200 mA, 4.5 V < VI < 40 V 3.168 3.3 3.432 3.234 3.3 3.366 V Output Voltage, 2.5 V Version VQ 5.0 mA < IQ < 400 mA, 4.5 V < VI < 28 V 2.4 2.5 2.6 − − − V Output Voltage, 2.5 V Version VQ 5.0 mA < IQ < 200 mA, 4.5 V < VI < 40 V 2.4 2.5 2.6 − − − V Output Voltage, 1.8 V Version VQ 5.0 mA < IQ < 400 mA, 4.5 V < VI < 28 V 1.728 1.8 1.872 − − − V Output Voltage, 1.8 V Version VQ 5.0 mA < IQ < 200 mA, 4.5 V < VI < 40 V 1.728 1.8 1.872 − − − V AVQ 5.0 mA < IQ < 400 mA VQ+1 < VI < 40 V VI > 4.5 V −4% − +4% −2% − +2% V 400 700 1100 400 700 1100 mA mA Output Voltage, Adjustable Version Output Current Limitation IQ VQ = 90% VQTYP (VQTYP = 2.5 V for ADJ version) Quiescent Current (Sleep Mode) Iq = II − IQ Iq VINH = 0 V − − 10 − − 10 Quiescent Current, Iq = II − IQ Iq IQ = 1.0 mA − 130 220 − 130 200 mA Quiescent Current, Iq = II − IQ Iq IQ = 250 mA − 10 15 − 10 15 mA Quiescent Current, Iq = II − IQ Iq IQ = 400 mA − 25 35 − 25 35 mA IQ = 250 mA, VDR = VI − VQ VI = 5.0 V VI = 4.5 V VI = 4.5 V VI = 4.5 V VI > 4.5 V − − − − − 250 − − − 250 500 1.332 2.1 2.772 500 − − − − − − − − − 250 − − − − 500 mV V V V mV IQ = 250 mA (Note 7) − − − − 250 500 mV IQ = 5.0 mA to 400 mA − 10 35 − 3.0 20 mV DVI = 12 V to 32 V, IQ = 5.0 mA − 2.5 25 − 4.0 15 mV fr = 100 Hz, Vr = 0.5 VPP − 60 − − 70 − dB − 0.5 − − 0.5 − mV/K Dropout Voltage, VDR 5.0 V Version 3.3 V Version 2.5 V Version 1.8 V Version Adjustable Version Dropout Voltage (5.0 V Version) VDR Load Regulation DVQ,LO Line Regulation DVQ Power Supply Ripple Rejection PSRR Temperature Output Voltage Drift dVQ/dT − INHIBIT Inhibit Voltage, Output High VINH VQ w VQMIN − 2.8 3.5 − 2.3 2.8 V Inhibit Voltage, Output Low (Off) VINH VQ v 0.1 V 0.5 1.7 − 1.8 2.2 − V Input Current IINH VINH = 5.0 V 5.0 10 20 5.0 10 20 mA TSD IQ = 5.0 mA 150 − 210 150 − 210 °C THERMAL SHUTDOWN Thermal Shutdown Temperature* *Guaranteed by design, not tested in production. 7. Measured when the output voltage VQ has dropped 100 mV from the nominal valued obtained at V = 13.5 V. http://onsemi.com 4 NCV4276, NCV4276A 5.5 − 45 V Input II CI1 1.0 mF I 1 CI2 100 nF CQ 22 mF NCV4276 INH 2 IINH 4 3 Output IQ 5 Q NC RL GND Figure 3. Applications Circuit; Fixed Voltage Version VQ = [(R1 + R2) * Vref] / R2 Input II CI1 1.0 mF I 1 CI2 100 nF 2 4 3 Output IQ CQ 22 mF NCV4276 NCV4276A INH IINH 5 Q Cb* R1 VA GND RL R2 Cb* − Required if usage of low ESR output capacitor CQ is demand, see Regulator Stability Considerations section Figure 4. Applications Circuit; Adjustable Voltage Version http://onsemi.com 5 NCV4276, NCV4276A TYPICAL PERFORMANCE CHARACTERISTICS 10 10 Unstable Region CQ = 22 mF for all Fixed Output Voltages Unstable Region Stable Region ESR (W) 1 ESR (W) 1 Maximum ESR for CQ = 22 mF 0.1 0.01 CQ = 10 mF for 3.3 V and 5 V Fixed Output Voltages Stable Region Maximum ESR for CQ = 10 mF 0.1 0 50 100 300 150 200 250 OUTPUT CURRENT (mA) 350 0.01 400 0 Figure 5. Output Stability with Output Capacitor ESR, 5.0 V, 3.3 V, 2.5 V and 1.8 V Regulator 10 Unstable Region 50 100 300 150 200 250 OUTPUT CURRENT (mA) 350 400 Figure 6. Output Stability with Output Capacitor ESR, 5.0 V and 3.3 V Regulator 100 CQ = 10 mF for 1.8 V and 2.5 V Fixed Output Voltages Unstable Region CQ = 22 mF for these Output Voltages 10 Stable Region Maximum ESR for CQ = 10 mF Unstable Region Minimum ESR for CQ = 10 mF ESR (W) ESR (W) 1 1 Stable Region 2.5 V 6V 12 V 0.1 0.01 0 50 100 150 200 250 300 OUTPUT CURRENT (mA) 350 0.1 Unstable Region 0.01 400 Figure 7. Output Stability with Output Capacitor ESR, 2.5 V and 1.8 V Regulator Cb capacitor not connected 0 50 100 150 200 250 300 OUTPUT CURRENT (mA) 350 400 Figure 8. Output Stability with Output Capacitor ESR, Adjustable Regulator http://onsemi.com 6 NCV4276, NCV4276A TYPICAL PERFORMANCE CHARACTERISTICS − 4276 Version 2.00 VI = 13.5 V RL = 1000 W VQ, OUTPUT VOLTAGE (V) VQ, OUTPUT VOLTAGE (V) 5.2 5.1 5.0 4.9 VI = 13.5 V RL = 1 kW 1.95 1.90 1.85 1.80 1.75 1.70 1.65 4.8 −40 0 40 80 120 1.60 −40 160 TJ, JUNCTION TEMPERATURE (°C) 3.45 VI = 13.5 V RL = 1 kW 2.65 VQ, OUTPUT VOLTAGE (V) VQ, OUTPUT VOLTAGE (V) 2.70 2.60 2.55 2.50 2.45 2.40 2.35 0 40 80 120 TJ, JUNCTION TEMPERATURE (°C) VI = 13.5 V RL = 1 kW 3.40 3.35 3.30 3.25 3.20 3.15 −40 160 40 80 Iq, CURRENT CONSUMPTION (mA) 10 40 TJ = 25°C RL = 20 W 35 30 25 20 15 10 5 0 10 20 30 VI, INPUT VOLTAGE (V) 40 120 160 Figure 12. Output Voltage vs. Junction Temperature, 3.3 V Version 45 Iq, CURRENT CONSUMPTION (mA) 0 TJ, JUNCTION TEMPERATURE (°C) Figure 11. Output Voltage vs. Junction Temperature, 2.5 V Version 0 160 Figure 10. Output Voltage vs. Junction Temperature, 1.8 V Version Figure 9. Output Voltage vs. Junction Temperature, 5.0 V Version 2.30 −40 0 40 80 120 TJ, JUNCTION TEMPERATURE (°C) 50 TJ = 25°C RL = 20 W 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Figure 13. Current Consumption vs. Input Voltage, 5.0 V Version 10 20 30 VI, INPUT VOLTAGE (V) 40 Figure 14. Current Consumption vs. Input Voltage, 1.8 V Version http://onsemi.com 7 50 NCV4276, NCV4276A TYPICAL PERFORMANCE CHARACTERISTICS − 4276 Version 30 Iq, CURRENT CONSUMPTION (mA) Iq, CURRENT CONSUMPTION (mA) 10 9.0 TJ = 25°C RL = 20 W 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 15 10 5.0 0 10 30 40 50 VI, INPUT VOLTAGE (V) Figure 15. Current Consumption vs. Input Voltage, 2.5 V Version Figure 16. Current Consumption vs. Input Voltage, 3.3 V Version 60 VDR, DROPOUT VOLTAGE (mV) 600 TJ = 25°C RL = 6.8 kW 4 2 0 −2 −4 −6 −8 −50 −25 0 25 500 400 300 TJ = 25°C 200 100 0 0 50 TJ = 125°C 50 100 VI, INPUT VOLTAGE (V) 200 250 300 350 400 Figure 18. Dropout Voltage vs. Output Current, 5.0 V Version 60 Iq, CURRENT CONSUMPTION (mA) 800 TJ = 25°C VQ = 0 V 700 600 500 400 300 200 100 0 150 IQ, OUTPUT CURRENT (mA) Figure 17. High Voltage Behavior IQ, OUTPUT CURRENT (mA) 20 VI, INPUT VOLTAGE (V) 6 II, INPUT CURRENT (mA) 20 0 50 TJ = 25°C RL = 20 W 25 0 10 20 30 40 40 30 20 10 0 50 TJ = 25°C VI = 13.5 V 50 0 VI, INPUT VOLTAGE (V) 100 200 300 400 500 IQ, OUTPUT CURRENT (mA) Figure 20. Current Consumption vs. Output Current (High Load) Figure 19. Maximum Output Current vs. Input Voltage http://onsemi.com 8 600 NCV4276, NCV4276A TYPICAL PERFORMANCE CHARACTERISTICS − 4276 Version 4.0 TJ = 25°C VI = 13.5 V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 TJ = 25°C RL = 20 W 3.5 VQ, OUTPUT VOLTAGE (V) Iq, CURRENT CONSUMPTION (mA) 1.6 3.0 2.5 2.0 1.5 1.0 0.5 0 60 0 1.0 2.0 IQ, OUTPUT CURRENT (mA) TJ = 25°C RL = 20 W 4.0 VQ, OUTPUT VOLTAGE (V) VQ, OUTPUT VOLTAGE (V) 6.0 6.0 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0 1.0 2.0 3.0 4.0 5.0 4.0 3.0 2.0 1.0 0 6.0 TJ = 25°C RL = 20 W 5.0 0 1.0 2.0 VI, INPUT VOLTAGE (V) 3.0 4.0 5.0 6.0 VI, INPUT VOLTAGE (V) Figure 24. Output Voltage vs. Input Voltage, 3.3 V Version Figure 23. Output Voltage vs. Input Voltage, 2.5 V Version 6 6.0 TJ = 25°C RL = 20 W 5 4.0 II, INPUT CURRENT (mA) VQ, OUTPUT VOLTAGE (V) 5.0 Figure 22. Output Voltage vs. Input Voltage, 1.8 V Version 5.0 4 3 2 1 0 4.0 VI, INPUT VOLTAGE (V) Figure 21. Current Consumption vs. Output Current (Low Load) 0.5 0 3.0 2.0 0 −2.0 −4.0 −6.0 TJ = 25°C RL = 6.8 kW −8.0 0 2 4 6 VI, INPUT VOLTAGE (V) 8 −10 −50 10 −25 0 25 VI, INPUT VOLTAGE (V) Figure 25. Output Voltage vs. Input Voltage, 5.0 V Version Figure 26. Input Current vs. Input Voltage, 5.0 V Version http://onsemi.com 9 50 NCV4276, NCV4276A 1.0 0 0 II, INPUT CURRENT (mA) 1.0 −1.0 −2.0 −3.0 −4.0 −5.0 TJ = 25°C RL = 6.8 kW −6.0 −7.0 −50 −25 0 −1.0 −2.0 −3.0 −4.0 −5.0 TJ = 25°C RL = 6.8 kW −6.0 25 −7.0 −50 50 −25 VI, INPUT VOLTAGE (V) 0 Figure 28. Input Current vs. Input Voltage, 2.5 V Version 6.0 4.0 2.0 0 −2.0 −4.0 −6.0 TJ = 25°C RL = 6.8 kW −8.0 −10 −50 25 VI, INPUT VOLTAGE (V) Figure 27. Input Current vs. Input Voltage, 1.8 V Version II, INPUT CURRENT (mA) II, INPUT CURRENT (mA) TYPICAL PERFORMANCE CHARACTERISTICS − 4276 Version −25 0 25 VI, INPUT VOLTAGE (V) Figure 29. Input Current vs. Input Voltage, 3.3 V Version http://onsemi.com 10 50 50 NCV4276, NCV4276A TYPICAL PERFORMANCE CHARACTERISTICS − 4276A Version 3.45 VI = 13.5 V RL = 1 kW VQ, OUTPUT VOLTAGE (V) VQ, OUTPUT VOLTAGE (V) 5.2 5.1 5.0 4.9 4.8 −40 0 40 80 120 3.25 3.20 0 10 10 20 30 40 10 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 50 0 10 5.0 5.0 VQ, OUTPUT VOLTAGE (V) 6.0 RL = 20 W TJ = 25°C 3.0 2.0 1.0 4.0 6.0 30 40 50 Figure 33. Current Consumption vs. Input Voltage, 3.3 V Version 6.0 2.0 20 VI, INPUT VOLTAGE (V) Figure 32. Current Consumption vs. Input Voltage, 5.0 V Version 4.0 160 RL = 20 W TJ = 25°C 9.0 VI, INPUT VOLTAGE (V) VQ, OUTPUT VOLTAGE (V) 120 Figure 31. Output Voltage vs. Junction Temperature, 3.3 V Version 20 0 80 TJ, JUNCTION TEMPERATURE (°C) 30 0 40 Figure 30. Output Voltage vs. Junction Temperature, 5.0 V Version Iq, CURRENT CONSUMPTION (mA) Iq, CURRENT CONSUMPTION (mA) 3.30 TJ, JUNCTION TEMPERATURE (°C) TJ = 25°C RL = 20 W 0 3.35 3.15 −40 160 40 0 VI = 13.5 V RL = 1 kW 3.40 8.0 4.0 3.0 2.0 1.0 0 10 TJ = 25°C RL = 20 W 0 1.0 2.0 3.0 4.0 5.0 VI, INPUT VOLTAGE (V) VI, INPUT VOLTAGE (V) Figure 35. Low Voltage Behavior, 5.0 V Version Figure 34. Low Voltage Behavior, 3.3 V Version http://onsemi.com 11 6.0 NCV4276, NCV4276A TYPICAL PERFORMANCE CHARACTERISTICS − 4276A Version 2.0 6.0 II, INPUT CURRENT (mA) II, INPUT CURRENT (mA) 4.0 2.0 0 −2.0 −4.0 −6.0 RL = 6.8 kW TJ = 25°C −8.0 −10 −50 −25 0 25 RL = 6.8 kW TJ = 25°C −8.0 −25 0 25 50 Figure 36. Input Current vs. Input Voltage, 5.0 V Version Figure 37. Input Current vs. Input Voltage, 3.3 V Version 800 IQ, OUTPUT CURRENT (mA) VDR, DROP VOLTAGE (mV) −6.0 VI, INPUT VOLTAGE (V) TJ = 125°C 400 300 TJ = 25°C 200 100 0 100 200 300 TJ = 25°C VQ = 0 V 600 400 200 0 400 0 10 20 30 40 IQ, OUTPUT CURRENT (mA) VI, INPUT VOLTAGE (V) Figure 38. Dropout Voltage vs. Output Current Figure 39. Maximum Output Current vs. Input Voltage 50 1.6 Iq, CURRENT CONSUMPTION (mA) 60 Iq, CURRENT CONSUMPTION (mA) −4.0 VI, INPUT VOLTAGE (V) 500 50 VI = 13.5 V TJ = 25°C 40 30 20 10 0 −2.0 −10 −50 50 600 0 0 0 100 200 300 400 500 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 600 VI = 13.5 V 0 10 20 30 40 50 IQ, OUTPUT CURRENT (mA) IQ, OUTPUT CURRENT (mA) Figure 40. Current Consumption vs. Output Current (High Load) Figure 41. Current Consumption vs. Output Current (Low Load) http://onsemi.com 12 60 NCV4276, NCV4276A TYPICAL PERFORMANCE CHARACTERISTICS − Adjustable Version 5.0 2.54 Iq, CURRENT CONSUMPTION (mA) VQ, OUTPUT VOLTAGE (V) 2.55 VI = 13.5 V, RL = 1 kW 2.53 2.52 2.51 2.50 2.49 2.48 2.47 2.46 2.45 −40 0 40 80 120 160 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 TJ, JUNCTION TEMPERATURE (°C) 0 20 30 VI, INPUT VOLTAGE (V) Figure 42. Output Voltage vs. Junction Temperature, Adjustable Version Figure 43. Current Consumption vs. Input Voltage, Adjustable Version 4 10 40 50 2 TJ = 25°C RL = 20 W 3.5 0 II, INPUT CURRENT (mA) VQ, OUTPUT VOLTAGE (V) TJ = 25°C RL = 20 W 4.5 3 2.5 2 1.5 1 0.5 2 4 6 VI, INPUT VOLTAGE (V) 8 −4 −6 −8 −10 −12 10 TJ = 25°C RL = 6.8 kW −14 −16 −18 −50 0 0 −2 −25 0 25 VI, INPUT VOLTAGE (V) Figure 44. Low Voltage Behavior, Adjustable Version Figure 45. High Voltage Behavior, Adjustable Version http://onsemi.com 13 50 NCV4276, NCV4276A TYPICAL PERFORMANCE CHARACTERISTICS − Adjustable Version 800 500 TJ = 125°C 400 300 TJ = 25°C 200 100 IQ, OUTPUT CURRENT (mA) VDR, DROPOUT VOLTAGE (mV) 600 700 600 500 TJ = 25°C VQ = 0 V 400 300 200 100 0 0 50 100 150 200 250 300 IQ, OUTPUT CURRENT (mA) 0 350 400 0 10 60 50 1.6 Iq, CURRENT CONSUMPTION (mA) Iq, CURRENT CONSUMPTION (mA) 40 Figure 47. Maximum Output Current vs. Input Voltage, Adjustable Version Figure 46. Dropout Voltage vs. Output Current, Regulator Set at 5.0 V, Adjustable Version TJ = 25°C VI = 13.5 V 50 40 30 20 10 0 20 30 VI, INPUT VOLTAGE (V) 0 100 200 300 400 500 1.2 1.0 0.8 0.6 0.4 0.2 0 600 TJ = 25°C VI = 13.5 V 1.4 0 10 20 30 40 50 IQ, OUTPUT CURRENT (mA) IQ, OUTPUT CURRENT (mA) Figure 48. Current Consumption vs. Output Current (High Load), Adjustable Version Figure 49. Current Consumption vs. Output Current (Low Load), Adjustable Version http://onsemi.com 14 60 NCV4276, NCV4276A Circuit Description The NCV4276 is an integrated low dropout regulator that provides a regulated voltage at 400 mA to the output. It is enabled with an input to the inhibit pin. The regulator voltage is provided by a PNP pass transistor controlled by an error amplifier with a bandgap reference, which gives it the lowest possible dropout voltage. The output current capability is 400 mA, and the base drive quiescent current is controlled to prevent oversaturation when the input voltage is low or when the output is overloaded. The regulator is protected by both current limit and thermal shutdown. Thermal shutdown occurs above 150°C to protect the IC during overloads and extreme ambient temperatures. Minimum ESR for CQ = 22 mF is native ESR of ceramic capacitor with which the fixed output voltage devices are performing stable. Murata ceramic capacitors were used, GRM32ER71C226KE18 (22 mF, 16 V, X7R, 1210), GRM31CR71C106KAC7 (10 mF, 16 V, X7R, 1206). Calculating Bypass Capacitor If usage of low ESR ceramic capacitors is demand in case of Adjustable Regulator, connect the bypass capacitor Cb between Voltage Adjust pin and Q pin according to Applications circuit at Figure 4. Parallel combination of bypass capacitor Cb with the feedback resistor R1 contributes in the device transfer function as an additional zero and affects the device loop stability, therefore its value must be optimized. Attention to the Output Capacitor value and its ESR must be paid. See also Stability in High Speed Linear LDO Regulators Application Note, AND8037/D for more information. Optimal value of bypass capacitor is given by following expression Regulator The error amplifier compares the reference voltage to a sample of the output voltage (VQ) and drives the base of a PNP series pass transistor via a buffer. The reference is a bandgap design to give it a temperature−stable output. Saturation control of the PNP is a function of the load current and input voltage. Oversaturation of the output power device is prevented, and quiescent current in the ground pin is minimized. See Figure 4, Test Circuit, for circuit element nomenclature illustration. Cb + 2 p 1 fz R1 @ (F) where R1 = the upper feedback resistor fz = the frequency of the zero added into the device transfer function by R1 and Cb external components. Set the R1 resistor according to output voltage requirement. Chose the fz with regard on the output capacitance CQ, refer to the table below. Regulator Stability Considerations The input capacitors (CI1 and CI2) are necessary to stabilize the input impedance to avoid voltage line influences. Using a resistor of approximately 1.0 W in series with CI2 can stop potential oscillations caused by stray inductance and capacitance. The output capacitor helps determine three main characteristics of a linear regulator: startup delay, load transient response and loop stability. The capacitor value and type should be based on cost, availability, size and temperature constraints. The aluminum electrolytic capacitor is the least expensive solution, but, if the circuit operates at low temperatures (−25°C to −40°C), both the value and ESR of the capacitor will vary considerably. The capacitor manufacturer’s data sheet usually provides this information. The value for the output capacitor CQ, shown in Figure 3, should work for most applications; see also Figures 5 to 8 for output stability at various load and Output Capacitor ESR conditions. Stable region of ESR in Figures 5 to 8 shows ESR values at which the LDO output voltage does not have any permanent oscillations at any dynamic changes of output load current. Marginal ESR is the value at which the output voltage waving is fully damped during four periods after the load change and no oscillation is further observable. ESR characteristics were measured with ceramic capacitors and additional series resistors to emulate ESR. Low duty cycle pulse load current technique has been used to maintain junction temperature close to ambient temperature. CQ (mF) 10 22 47 100 fz Range (kHz) 20 - 50 14 - 35 10 - 20 7 – 14 Ceramic capacitors and its part numbers listed bellow have been used as low ESR output capacitors CQ from the table above to define the frequency ranges of additional zero required for stability. GRM31CR71C106KAC7 (10 mF, 16 V, X7R, 1206) GRM32ER71C226KE18 (22 mF, 16 V, X7R, 1210) GRM32ER61C476ME15 (47 mF, 16 V, X5R, 1210) GRM32ER60J107ME20 (100 mF, 6.3 V, X5R, 1210) Inhibit Input The inhibit pin is used to turn the regulator on or off. By holding the pin down to a voltage less than 0.5 V (or 1.8 V for NCV4276A parts), the output of the regulator will be turned off. During startup transient the regulator is off at input voltage slew rates faster than 30 V/ms. When the voltage on the Inhibit pin is greater than 3.5 V (or 2.8 V for NCV4276A parts), the output of the regulator will be enabled to power its output to the regulated output voltage. The inhibit pin may be connected directly to the input pin to give constant enable to the output regulator. http://onsemi.com 15 NCV4276, NCV4276A Setting the Output Voltage (Adjustable Version) The output voltage range of the adjustable version can be set between 2.5 V and 20 V. This is accomplished with an external resistor divider feeding back the voltage to the IC back to the error amplifier by the voltage adjust pin VA. The internal reference voltage is set to a temperature stable reference of 2.5 V. The output voltage is calculated from the following formula. Ignoring the bias current into the VA pin: Use R2 < 50 k to avoid significant voltage output errors due to VA bias current. Connecting VA directly to Q without R1 and R2 creates an output voltage of 2.5 V. Designers should consider the tolerance of R1 and R2 during the design phase. The input voltage range for operation (pin 1) of the adjustable version is between (VQ + 0.5 V) and 40 V. Internal bias requirements dictate a minimum input voltage of 4.5 V. The dropout voltage for output voltages less than 4.0 V is (4.5 V − VQ). VQ + [(R1 ) R2) * Vref]ńR2 http://onsemi.com 16 NCV4276, NCV4276A Calculating Power Dissipation in a Single Output Linear Regulator The maximum power dissipation for a single output regulator (Figure 50) is: PD(max) + [VI(max) * VQ(min)] IQ(max) Heatsinks A heatsink effectively increases the surface area of the package to improve the flow of heat away from the IC and into the surrounding air. Each material in the heat flow path between the IC and the outside environment will have a thermal resistance. Like series electrical resistances, these resistances are summed to determine the value of RqJA: (1) ) VI(max)Iq where RqJA + RqJC ) RqCS ) RqSA VI(max) VQ(min) IQ(max) is the maximum input voltage, is the minimum output voltage, is the maximum output current for the application, Iq is the quiescent current the regulator consumes at IQ(max). Once the value of PD(max) is known, the maximum permissible value of RqJA can be calculated: o T RqJA + 150 C * A PD where RqJC is the junction−to−case thermal resistance, RqCS is the case−to−heatsink thermal resistance, RqSA is the heatsink−to−ambient thermal resistance. RqJC appears in the package section of the data sheet. Like RqJA, it too is a function of package type. RqCS and RqSA are functions of the package type, heatsink and the interface between them. These values appear in data sheets of heatsink manufacturers. Thermal, mounting, and heatsinking considerations are discussed in the ON Semiconductor application note AN1040/D. (2) The value of RqJA can then be compared with those in the package section of the data sheet. Those packages with RqJA less than the calculated value in Equation 2 will keep the die temperature below 150°C. In some cases, none of the packages will be sufficient to dissipate the heat generated by the IC, and an external heatsink will be required. IQ II VI SMART REGULATOR® (3) VQ } Control Features Iq Figure 50. Single Output Regulator with Key Performance Parameters Labeled http://onsemi.com 17 NCV4276, NCV4276A Thermal Model A discussion of thermal modeling is in the ON Semiconductor web site: http://www.onsemi.com/pub/collateral/BR1487−D.PDF. Table 1. DPAK 5−Lead Thermal RC Network Models Drain Copper Area (1 oz thick) 168 mm2 (SPICE Deck Format) 736 mm2 168 mm2 Cauer Network 168 mm2 736 mm2 Foster Network 736 mm2 Units Tau Tau Units C_C1 Junction GND 1.00E−06 1.00E−06 W−s/C 1.36E−08 1.361E−08 sec C_C2 node1 GND 1.00E−05 1.00E−05 W−s/C 7.41E−07 7.411E−07 sec C_C3 node2 GND 6.00E−05 6.00E−05 W−s/C 1.04E−05 1.029E−05 sec C_C4 node3 GND 1.00E−04 1.00E−04 W−s/C 3.91E−05 3.737E−05 sec C_C5 node4 GND 4.36E−04 3.64E−04 W−s/C 1.80E−03 1.376E−03 sec C_C6 node5 GND 6.77E−02 1.92E−02 W−s/C 3.77E−01 2.851E−02 sec C_C7 node6 GND 1.51E−01 1.27E−01 W−s/C 3.79E+00 9.475E−01 sec C_C8 node7 GND 4.80E−01 1.018 W−s/C 2.65E+01 1.173E+01 sec C_C9 node8 GND 3.740 2.955 W−s/C 8.71E+01 8.59E+01 sec C_C10 node9 GND 10.322 0.438 W−s/C 168 mm2 736 mm2 sec R’s R’s R_R1 Junction node1 0.015 0.015 C/W 0.0123 0.0123 C/W R_R2 node1 node2 0.08 0.08 C/W 0.0585 0.0585 C/W R_R3 node2 node3 0.4 0.4 C/W 0.0304 0.0287 C/W R_R4 node3 node4 0.2 0.2 C/W 0.3997 0.3772 C/W R_R5 node4 node5 2.97519 2.6171 C/W 3.115 2.68 C/W R_R6 node5 node6 8.2971 1.6778 C/W 3.571 1.38 C/W R_R7 node6 node7 25.9805 7.4246 C/W 12.851 5.92 C/W R_R8 node7 node8 46.5192 14.9320 C/W 35.471 7.39 C/W R_R9 node8 node9 17.7808 19.2560 C/W 46.741 28.94 C/W R_R10 node9 GND 0.1 0.1758 C/W NOTE: C/W Bold face items represent the package without the external thermal system. R1 Junction C1 R2 C2 R3 C3 Rn Cn Time constants are not simple RC products. Amplitudes of mathematical solution are not the resistance values. Ambient (thermal ground) Figure 51. Grounded Capacitor Thermal Network (“Cauer” Ladder) Junction R1 C1 R2 C2 R3 C3 Rn Cn Each rung is exactly characterized by its RC−product time constant; amplitudes are the resistances. Ambient (thermal ground) Figure 52. Non−Grounded Capacitor Thermal Ladder (“Foster” Ladder) http://onsemi.com 18 NCV4276, NCV4276A Table 2. D2PAK 5−Lead Thermal RC Network Models Drain Copper Area (1 oz thick) 241 mm2 (SPICE Deck Format) 788 mm2 241 mm2 Cauer Network 788 mm2 Foster Network 241 mm2 653 mm2 Units Tau Tau Units C_C1 Junction GND 1.00E−06 1.00E−06 W−s/C 1.361E−08 1.361E−08 sec C_C2 node1 GND 1.00E−05 1.00E−05 W−s/C 7.411E−07 7.411E−07 sec C_C3 node2 GND 6.00E−05 6.00E−05 W−s/C 1.005E−05 1.007E−05 sec C_C4 node3 GND 1.00E−04 1.00E−04 W−s/C 3.460E−05 3.480E−05 sec C_C5 node4 GND 2.82E−04 2.87E−04 W−s/C 7.868E−04 8.107E−04 sec C_C6 node5 GND 5.58E−03 5.95E−03 W−s/C 7.431E−03 7.830E−03 sec C_C7 node6 GND 4.25E−01 4.61E−01 W−s/C 2.786E+00 2.012E+00 sec C_C8 node7 GND 9.22E−01 2.05 W−s/C 2.014E+01 2.601E+01 sec C_C9 node8 GND 1.73 4.88 W−s/C 1.134E+02 1.218E+02 sec C_C10 node9 GND 7.12 1.31 W−s/C 241 mm2 653 mm2 sec R’s R’s R_R1 Junction node1 0.015 0.0150 C/W 0.0123 0.0123 C/W R_R2 node1 node2 0.08 0.0800 C/W 0.0585 0.0585 C/W R_R3 node2 node3 0.4 0.4000 C/W 0.0257 0.0260 C/W R_R4 node3 node4 0.2 0.2000 C/W 0.3413 0.3438 C/W R_R5 node4 node5 1.85638 1.8839 C/W 1.77 1.81 C/W R_R6 node5 node6 1.23672 1.2272 C/W 1.54 1.52 C/W R_R7 node6 node7 9.81541 5.3383 C/W 4.13 3.46 C/W R_R8 node7 node8 33.1868 18.9591 C/W 6.27 5.03 C/W R_R9 node8 node9 27.0263 13.3369 C/W 60.80 29.30 C/W node9 GND 1.13944 0.1191 C/W R_R10 NOTE: C/W Bold face items represent the package without the external thermal system. The Cauer networks generally have physical significance and may be divided between nodes to separate thermal behavior due to one portion of the network from another. The Foster networks, though when sorted by time constant (as above) bear a rough correlation with the Cauer networks, are really only convenient mathematical models. Cauer networks can be easily implemented using circuit simulating tools, whereas Foster networks may be more easily implemented using mathematical tools (for instance, in a spreadsheet program), according to the following formula: n R(t) + S Ri ǒ1−e−tńtaui Ǔ i+1 http://onsemi.com 19 110 110 100 100 90 90 80 80 70 qJA (C°/W) qJA (C°/W) NCV4276, NCV4276A 1 oz 60 2 oz 70 60 1 oz 2 oz 50 50 40 40 30 150 200 250 300 350 400 450 500 550 600 650 700 750 30 150 200 250 300 350 400 450 500 550 600 650 700 750 COPPER AREA (mm2) COPPER AREA (mm2) Figure 53. qJA vs. Copper Spreader Area, DPAK 5−Lead Figure 54. qJA vs. Copper Spreader Area, D2PAK 5−Lead 100 Cu Area 167 mm2 Cu Area 736 mm2 R(t) C°/W 10 1.0 sqrt(t) 0.1 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 TIME (sec) Figure 55. Single−Pulse Heating Curves, DPAK 5−Lead 100 Cu Area 167 mm2 Cu Area 736 mm2 R(t) C°/W 10 1.0 0.1 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 TIME (sec) Figure 56. Single−Pulse Heating Curves, D2PAK 5−Lead http://onsemi.com 20 10 100 1000 NCV4276, NCV4276A 100 RqJA 736 mm2 C°/W 50% Duty Cycle 10 1.0 20% 10% 5% 2% 1% 0.1 Non−normalized Response 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE WIDTH (sec) Figure 57. Duty Cycle for 1, Spreader Boards, DPAK 5−Lead 100 RqJA 788 mm2 C°/W 50% Duty Cycle 10 1.0 20% 10% 5% 2% 1% 0.1 Non−normalized Response 0.01 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE WIDTH (sec) Figure 58. Duty Cycle for 1, Spreader Boards, D2PAK 5−Lead http://onsemi.com 21 NCV4276, NCV4276A MARKING DIAGRAMS NC V4276A−XX AWLYWWG 76AXXG ALYWW 1 1 1 NCV4276A DPAK 5−PIN DT SUFFIX CASE 175AA NC V4276−XX AWLYWWG 4276XG ALYWW NCV4276A D2PAK 5−PIN DS SUFFIX CASE 936A 1 NCV4276 NCV4276 DPAK 5−PIN DT SUFFIX CASE 175AA D2PAK 5−PIN DS SUFFIX CASE 936A *Tab is connected to Pin 3 on all packages. A WL, L Y WW G x, xx = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Device = Voltage Ratings as indicated below A−Version DPAK XX = AJ (Adj. Voltage) XX = 50 (5.0 V) XX = 33 (3.3 V) D2PAK XX = AJ (Adj. Voltage) XX = 50 (5.0 V) Non−A−Version D2PAK XX = AJ (Adj. Voltage) XX = 50 (5.0 V) XX = 33 (3.3 V) XX = 25 (2.5 V) XX = 18 (1.8 V) DPAK X = V (Adj. Voltage) X = 5 (5.0 V) X = 3 (3.3 V) http://onsemi.com 22 NCV4276, NCV4276A ORDERING INFORMATION Package Shipping† DPAK, 5−Pin (Pb−Free) 2500 / Tape & Reel D2PAK, 5−Pin (Pb−Free) 50 Units / Rail NCV4276DS50R4G D2PAK, 5−Pin (Pb−Free) 800 / Tape & Reel NCV4276DT33RKG DPAK, 5−Pin (Pb−Free) 2500 / Tape & Reel D2PAK, 5−Pin (Pb−Free) 50 Units / Rail D2PAK, 5−Pin (Pb−Free) 800 / Tape & Reel D2PAK, 5−Pin (Pb−Free) 50 Units / Rail D2PAK, 5−Pin (Pb−Free) 800 / Tape & Reel D2PAK, 5−Pin (Pb−Free) 50 Units / Rail D2PAK, 5−Pin (Pb−Free) 800 / Tape & Reel DPAK, 5−Pin (Pb−Free) 2500 / Tape & Reel D2PAK, 5−Pin (Pb−Free) 50 Units / Rail Device Output Voltage Accuracy Output Voltage NCV4276DT50RKG NCV4276DS50G 5.0 V NCV4276DS33G 3.3 V NCV4276DS33R4G NCV4276DS25G 4% 2.5 V NCV4276DS25R4G NCV4276DS18G 1.8 V NCV4276DS18R4G NCV4276DTADJRKG Adjustable NCV4276DSADJG NCV4276DSADJR4G NCV4276ADT33RKG 3.3 V NCV4276ADT50RKG 5.0 V NCV4276ADS50G NCV4276ADS50R4G 2% NCV4276ADTADJRKG NCV4276ADSADJG DPAK, 5−Pin (Pb−Free) 2500 / Tape & Reel DPAK, 5−Pin (Pb−Free) 2500 / Tape & Reel D2PAK, 5−Pin (Pb−Free) DPAK, 5−Pin (Pb−Free) Adjustable NCV4276ADSADJR4G 800 / Tape & Reel D2PAK, 5−Pin (Pb−Free) 50 Units / Rail 800 / Tape & Reel 2500 / Tape & Reel 50 Units / Rail 800 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. SMART REGULATOR is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). http://onsemi.com 23 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK−5, CENTER LEAD CROP CASE 175AA ISSUE B DATE 15 MAY 2014 SCALE 1:1 −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R R1 Z A S 12 3 4 5 U K F J L H D G 5 PL 0.13 (0.005) M T 2.2 0.086 0.34 5.36 0.013 0.217 5.8 0.228 10.6 0.417 0.8 0.031 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON12855D INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.020 0.028 0.018 0.023 0.024 0.032 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.045 BSC 0.170 0.190 0.185 0.210 0.025 0.040 0.020 −−− 0.035 0.050 0.155 0.170 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.51 0.71 0.46 0.58 0.61 0.81 4.56 BSC 0.87 1.01 0.46 0.58 2.60 2.89 1.14 BSC 4.32 4.83 4.70 5.33 0.63 1.01 0.51 −−− 0.89 1.27 3.93 4.32 GENERIC MARKING DIAGRAMS* RECOMMENDED SOLDERING FOOTPRINT* 6.4 0.252 DIM A B C D E F G H J K L R R1 S U V Z XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete XXXXXX A L Y WW G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DPAK−5 CENTER LEAD CROP PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 5−LEAD CASE 936A−02 ISSUE E DATE 28 JUL 2021 SCALE 1:1 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxx A WL Y WW G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASH01006A D2PAK 5−LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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