NDD60N550U1T4G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NDD60N550U1 N-Channel Power MOSFET 600 V, 550 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD Unit Drain−to−Source Voltage VDSS 600 V Gate−to−Source Voltage VGS ±25 V ID 8.2 A Continuous Drain Current RqJC Steady State TC = 25°C TC = 100°C Power Dissipation – RqJC Steady State 94 W IDM 34 A TJ, TSTG −55 to +150 °C IS 8.2 A Single Pulse Drain−to−Source Avalanche Energy (ID = 4 A) EAS 54 mJ Peak Diode Recovery (Note 1) dv/dt 15 V/ns TL 260 °C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Leads 550 mW @ 10 V N−Channel MOSFET D (2) G (1) S (3) 1 4 1 2 2 3 IPAK CASE 369D STYLE 2 3 DPAK CASE 369C STYLE 2 4 12 THERMAL RESISTANCE Parameter Symbol Value Unit NDD60N550U1 RqJC 1.3 °C/W Junction−to−Ambient Steady State (Note 3) NDD60N550U1 (Note 2) NDD60N550U1−1 (Note 2) NDD60N550U1−35 RqJA © Semiconductor Components Industries, LLC, 2013 3 IPAK CASE 369AD STYLE 2 °C/W 47 98 95 MARKING AND ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. 2. Insertion mounted 3. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces) December, 2013 − Rev. 0 600 V 4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. ISD < 8.2 A, di/dt ≤ 400 A/ms, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS Junction−to−Case (Drain) RDS(ON) MAX 5.2 PD Pulsed Drain Current TC = 25°C V(BR)DSS 1 Publication Order Number: NDD60N550U1/D NDD60N550U1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Conditions Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 600 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Characteristic Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Leakage Current Gate−to−Source Leakage Current IDSS V 540 VDS = 600 V, VGS = 0 V IGSS mV/°C TJ = 25°C 1 TJ = 125°C 100 VGS = ±25 V ±100 mA nA ON CHARACTERISTICS (Note 4) VGS(TH) VDS = VGS, ID = 250 mA Negative Threshold Temperature Coefficient VGS(TH)/TJ Reference to 25°C, ID = 250 mA 7.6 Static Drain-to-Source On Resistance RDS(on) VGS = 10 V, ID = 4 A 510 gFS VDS = 15 V, ID = 4 A 7.0 S 540 pF Gate Threshold Voltage Forward Transconductance 2 3.2 4 V mV/°C 550 mW DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Effective output capacitance, energy related (Note 6) Co(er) Effective output capacitance, time related (Note 7) Co(tr) VDS = 50 V, VGS = 0 V, f = 1 MHz 33 1.6 VGS = 0 V, VDS = 0 to 480 V ID = constant, VGS = 0 V, VDS = 0 to 480 V 24 84 nC Total Gate Charge Qg 18 Gate-to-Source Charge Qgs 3.4 Gate-to-Drain Charge Qgd Plateau Voltage VGP 5.4 V Gate Resistance Rg 5.5 W 8 ns VDS = 300 V, ID = 9.5 A, VGS = 10 V 8.7 RESISTIVE SWITCHING CHARACTERISTICS (Note 5) Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time td(on) tr td(off) VDD = 300 V, ID = 9.5 A, VGS = 10 V, RG = 0 W tf 14 20 17 SOURCE−DRAIN DIODE CHARACTERISTICS Diode Forward Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Charge Qrr IS = 8.2 A, VGS = 0 V TJ = 25°C 0.9 TJ = 100°C 0.82 290 VGS = 0 V, VDD = 30 V IS = 9.5 A, di/dt = 100 A/ms 1.3 V ns 160 130 2.6 mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. 6. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 7. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS http://onsemi.com 2 NDD60N550U1 MARKING DIAGRAMS 4 Drain 4 Drain YWW 60N 550U1G YWW 60N 550U1G YWW 60N 550U1G 4 Drain 2 1 Drain 3 Gate Source 1 2 3 Gate Drain Source IPAK DPAK Y WW G 1 Gate 3 2 Source Drain IPAK = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† NDD60N550U1−1G IPAK (Pb-Free, Halogen-Free) 75 Units / Rail NDD60N550U1−35G IPAK (Pb-Free, Halogen-Free) 75 Units / Rail NDD60N550U1T4G DPAK (Pb-Free, Halogen-Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NDD60N550U1 TYPICAL CHARACTERISTICS 16 14 12 VGS = 5.5 V 10 8 VGS = 5.0 V 6 4 VGS = 4.5 V 2 VGS = 4.0 V 0 5 10 15 20 25 30 0.7 0.6 0.5 5 6 7 8 9 10 2.6 ID = 4 A VGS = 10 V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 BVDSS, NORMALIZED BREAKDOWN VOLTAGE VGS, GATE VOLTAGE (V) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 4 TJ = 150°C TJ = −55°C 2 3 5 4 6 7 9 10 14 16 8 Figure 2. Transfer Characteristics 0.8 0.6 0.4 −50 6 Figure 1. On−Region Characteristics 0.9 2.2 8 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 4 A 2.4 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.0 4 TJ = 25°C 12 0 1.1 0.4 VDS = 15 V 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 14 VGS = 6.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16 VGS = 10 V to 6.5 V 1.1 TJ = 25°C VGS = 10 V 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0 2 6 4 8 10 12 ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.125 1.100 ID = 250 mA 1.075 1.050 1.025 1.000 0.975 0.950 0.925 −50 Figure 5. On−Resistance Variation with Temperature −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Breakdown Voltage Variation with Temperature http://onsemi.com 4 150 NDD60N550U1 10,000 1.15 ID = 250 mA 1.10 TJ = 150°C 1.00 0.95 0.90 0.85 0.80 TJ = 125°C 100 TJ = 100°C 0.75 0.70 0.65 −50 10,000 C, CAPACITANCE (pF) 1000 −25 0 25 50 75 100 VGS = 0 V TJ = 25°C f = 1 MHz 10 1 10 100 12 400 500 600 300 10 9 8 7 1000 350 QT 11 VDS 200 QGD 150 4 3 2 1 0 250 VGS QGS 6 5 100 VDS = 300 V TJ = 25°C ID = 9.5 A 0 2 4 6 8 10 12 14 16 50 18 20 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 9. Capacitance Variation Figure 10. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 100 1000 VGS = 10 V VDD = 300 V ID = 9.5 A TJ = 100°C IS, SOURCE CURRENT (A) t, TIME (ns) 300 Figure 8. Drain−to−Source Leakage Current vs. Voltage 100 td(off) 100 tf tr td(on) 10 1 200 Figure 7. Threshold Voltage Variation with Temperature CISS 0.1 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) CRSS 1 0 TJ, JUNCTION TEMPERATURE (°C) COSS 1000 10 150 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) IDSS, LEAKAGE (nA) 1.05 VGS, GATE−TO−SOURCE VOLTAGE (V) VGS(th), NORMALIZED THRESHOLD VOLTAGE TYPICAL CHARACTERISTICS 1 10 TJ = 125°C 10 TJ = 150°C 1 0.1 100 TJ = 25°C 0.4 0.5 0.6 0.7 0.8 TJ = −55°C 0.9 1.0 1.1 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 11. Resistive Switching Time Variation vs. Gate Resistance Figure 12. Diode Forward Voltage vs. Current http://onsemi.com 5 NDD60N550U1 TYPICAL CHARACTERISTICS ID, DRAIN CURRENT (A) 100 VGS ≤ 25 V Single Pulse TC = 25°C 10 10 ms 100 ms 1 0.1 0.01 1 ms 10 ms dc RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 1000 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area 10 RqJC steady state = 1.3°C/W 1 Duty Cycle = 0.5 0.20 0.10 0.1 0.05 0.02 0.01 0.01 Single Pulse 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 t, TIME (s) Figure 14. Thermal Impedance (Junction−to−Case) http://onsemi.com 6 1E+01 1E+02 1E+03 NDD60N550U1 PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 A S 1 2 DIM A B C D E F G H J K R S V Z Z 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T 3.5 MM IPAK, STRAIGHT LEAD CASE 369AD ISSUE B E E3 L2 E2 A1 D2 D L1 L T SEATING PLANE A A1 b1 2X e A2 3X E2 b 0.13 M T D2 OPTIONAL CONSTRUCTION http://onsemi.com 7 NOTES: 1.. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD GATE OR MOLD FLASH. DIM A A1 A2 b b1 D D2 E E2 E3 e L L1 L2 MILLIMETERS MIN MAX 2.19 2.38 0.46 0.60 0.87 1.10 0.69 0.89 0.77 1.10 5.97 6.22 4.80 −−− 6.35 6.73 4.57 5.45 4.45 5.46 2.28 BSC 3.40 3.60 −−− 2.10 0.89 1.27 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN NDD60N550U1 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES DIM MIN MAX A 0.086 0.094 A1 0.000 0.005 b 0.025 0.035 b2 0.030 0.045 b3 0.180 0.215 c 0.018 0.024 c2 0.018 0.024 D 0.235 0.245 E 0.250 0.265 e 0.090 BSC H 0.370 0.410 L 0.055 0.070 L1 0.108 REF L2 0.020 BSC L3 0.035 0.050 L4 −−− 0.040 Z 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 8 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NDF60N550U1/D