NJT4030P_10

NJT4030P Bipolar Power Transistors PNP Silicon Features  Collector --Emitter Sustaining Voltage -      VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain = 200 (Min) @ IC = 1.0 Adc hFE = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc = 0.500 Vdc (Max) @ IC = 3.0 Adc SOT-223 Surface Mount Packaging Epoxy Meets UL 94, V- @ 0.125 in -0 ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS C 2,4 B1 E3 Schematic MARKING DIAGRAM SOT-223 CASE 318E STYLE 1 1 A Y W 4030P G AYW 4030PG = Assembly Location Year = Work Week = Specific Device Code = Pb--Free Package PIN ASSIGNMENT 4 C B 1 C 2 E 3 Top View Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.  Semiconductor Components Industries, LLC, 2010 September, 2010 - Rev. 1 - 1 Publication Order Number: NJT4030P/D NJT4030P MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector--Emitter Voltage Collector--Base Voltage Emitter--Base Voltage Base Current -- Continuous Collector Current -- Continuous Collector Current -- Peak Total Power Dissipation Total PD @ TA = 25C mounted on 1” sq. (645 sq. mm) Collector pad on FR--4 bd material Total PD @ TA = 25C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR--4 bd material Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IB IC Value 40 40 6.0 1.0 3.0 5.0 Unit Vdc Vdc Vdc Adc Adc PD 2.0 0.80 – 55 to + 150 W TJ, Tstg C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction--to--Case -- Junction--to--Ambient on 1” sq. (645 sq. mm) Collector pad on FR--4 bd material -- Junction--to--Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR--4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds Symbol Max Unit C/W RθJA RθJA TL 64 155 260 C ORDERING INFORMATION Device NJT4030PT1G NJT4030PT3G Package SOT--223 (Pb--Free) SOT--223 (Pb--Free) Shipping† 1000 / Tape & Reel 4000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NJT4030P ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector--Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) Emitter--Base Voltage (IE = 50 mAdc, IC = 0 Adc) Collector Cutoff Current (VCB = 40 Vdc) Emitter Cutoff Current (VBE = 6.0 Vdc) ON CHARACTERISTICS (Note 1) Collector--Emitter Saturation Voltage (IC = 0.5 Adc, IB = 5.0 mAdc) (IC = 1.0 Adc, IB = 10 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) Base--Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) Base--Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) DC Current Gain (IC = 0.5 Adc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) Input Capacitance (VEB = 5.0 Vdc, f = 1.0 MHz) Current--Gain -- Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) 1. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%. 2. fT = |hFE|  ftest Cob pF VCE(sat) Vdc VCEO(sus) Vdc Symbol Min Typ Max Unit 40 -- -- VEBO 6.0 -- -- Vdc ICBO -- -- 100 nAdc IEBO -- -- 100 nAdc ---- ---- 0.150 0.200 0.500 VBE(sat) -- -- 1.0 Vdc VBE(on) -- -- 1.0 Vdc hFE 220 200 100 ---- -400 -- -- -- 40 -- Cib -- 130 -- pF fT -- 160 -- MHz http://onsemi.com 3 NJT4030P 2.5 PD, POWER DISSIPATION (W) 2.0 1.5 TC 1.0 TA 0.5 0 25 50 75 100 125 150 TJ, TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 4 NJT4030P TYPICAL CHARACTERISTICS 600 500 400 25C 300 200 100 0 0.001 0.01 0.1 1 10 --40C 150C VCE = 1 V hFE, DC CURRENT GAIN 700 600 500 400 300 200 100 0 0.001 0.01 0.1 1 10 --40C 25C VCE = 4 V 150C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain 1 VCE(sat), COLLECTOR--EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR--EMITTER SATURATION VOLTAGE (V) IC/IB = 10 25C 0.1 150C --40C 1 IC/IB = 50 Figure 3. DC Current Gain 150C 25C 0.1 --40C 0.01 0.001 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector-Emitter Saturation Voltage 1 VCE(sat), COLLECTOR--EMITTER SATURATION VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Figure 5. Collector-Emitter Saturation Voltage VBE(on), EMITTER--BASE VOLTAGE (V) VCE = 2 V IC = 2 A 1A 0.1 0.1 A 0.5 A --40C 25C 150C 0.01 1.0E--04 1.0E--03 1.0E--02 1.0E--01 1.0E+00 0.001 0.01 0.1 1 10 IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Collector Saturation Region Figure 7. VBE(on) Voltage http://onsemi.com 5 NJT4030P TYPICAL CHARACTERISTICS 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.2 IC/IB = 10 VBE(sat), EMITTER--BASE SATURATION VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 150C IC/IB = 50 --40C 25C VBE(sat), EMITTER--BASE SATURATION VOLTAGE (V) --40C 25C 150C 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. Base-Emitter Saturation Voltage 350 Cibo, INPUT CAPACITANCE (pF) 300 250 200 150 100 50 0 0 1 2 3 4 5 6 100 Cobo, OUTPUT CAPACITANCE (pF) 80 60 40 20 0 Figure 9. Base-Emitter Saturation Voltage TJ = 25C ftest = 1 MHz TJ = 25C ftest = 1 MHz 0 5 10 15 20 25 30 35 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance 200 160 140 120 100 80 60 40 20 0 IC, COLLECTOR CURRENT (A) fTau, CURRENT BANDWIDTH PRODUCT (MHz) 180 TJ = 25C ftest = 1 MHz VCE = 10 V 10 Figure 11. Output Capacitance 0.5 ms 1 10 ms 100 ms 0.1 1 ms 0.001 0.01 0.1 1 0.01 1 10 VCE, COLLECTOR--EMITTER VOLTAGE (V) 100 IC, COLLECTOR CURRENT (A) Figure 12. Current-Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 6 NJT4030P PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E--04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b b1 c D E e e1 L L1 HE MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 ----------1.75 2.00 7.00 7.30 10 -MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 -----0.069 0.276 -MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 -----0.078 0.287 10 D b1 4 HE 1 2 3 E e1 b e A θ L L1 C 0.08 (0003) θ A1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800--282--9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81--3--5773--3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 NJT4030P/D