NJW3281G

NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications. Features http://onsemi.com 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS • • • • • • Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency These Devices are Pb−Free and are RoHS Compliant • • • • • Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwidth NPN PNP Benefits COLLECTOR 2, 4 COLLECTOR 2, 4 1 BASE 1 BASE EMITTER 3 Applications EMITTER 3 • High−End Consumer Audio Products Home Amplifiers Home Receivers Professional Audio Amplifiers ♦ Theater and Stadium Sound Systems ♦ Public Address Systems (PAs) ♦ • MARKING DIAGRAM ♦ 4 NJWxxxG AYWW MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 250 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 250 Vdc IC 15 Adc ICM 30 Adc Base Current − Continuous IB 1.6 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C TJ, Tstg −    65 to +150 °C Rating Collector Current − Continuous Collector Current − Peak (Note 1) Operating and Storage Junction Temperature Range TO−3P CASE 340AB STYLES 1,2,3 1 2 1 3 xxxx G A Y WW 2 3 = 0281 or 0302 = Pb−Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION THERMAL CHARACTERISTICS Symbol Max Unit Device Package Shipping Thermal Resistance, Junction−to−Case RqJC 0.625 °C/W NJW3281G RqJA 40 °C/W TO−3P (Pb−Free) 30 Units/Rail Thermal Resistance, Junction−to−Ambient NJW1302G TO−3P (Pb−Free) 30 Units/Rail Characteristic Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. © Semiconductor Components Industries, LLC, 2013 September, 2013 − Rev. 1 1 Publication Order Number: NJW3281/D NJW3281G (NPN) NJW1302G (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 250 − − − − 50 − − 5 4 − − 75 75 75 60 45 − − − − − 150 150 150 − − − 0.4 0.6 − − 1.5 − 30 − − − 600 Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Vdc mAdc mAdc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS hFE DC Current Gain (IC = 100 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VCE(sat) Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) − Vdc Vdc DYNAMIC CHARACTERISTICS fT Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Cob http://onsemi.com 2 MHz pF NJW3281G (NPN) NJW1302G (PNP) TYPICAL CHARACTERISTICS PNP NJW1302G NPN NJW3281G 50 TJ = 25°C ftest = 1 MHz 80 VCE = 10 V 40 fTau, CURRENT BANDWIDTH PRODUCT (MHz) fTau, CURRENT BANDWIDTH PRODUCT (MHz) 60 5V 30 20 10 0 0.1 1 VCE = 10 V 60 5V 40 20 0 10 TJ = 25°C ftest = 1 MHz 0.1 IC, COLLECTOR CURRENT (A) 1 IC, COLLECTOR CURRENT (A) Figure 2. Typical Current Gain Bandwidth Product Figure 1. Typical Current Gain Bandwidth Product 1000 1000 VCE = 5 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 5 V 125°C 25°C 100 10 0.01 −30°C 0.1 1 10 IC, COLLECTOR CURRENT (A) 125°C 25°C 100 −30°C 10 0.1 100 Figure 3. DC Current Gain 1 10 IC, COLLECTOR CURRENT (A) 1000 VCE = 20 V hFE, DC CURRENT GAIN VCE = 20 V hFE, DC CURRENT GAIN 100 Figure 4. DC Current Gain 1000 125°C 25°C 100 −30°C 10 0.01 10 0.1 1 10 100 10 100 125°C 25°C −30°C 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 5. DC Current Gain Figure 6. DC Current Gain http://onsemi.com 3 10 NJW3281G (NPN) NJW1302G (PNP) TYPICAL CHARACTERISTICS PNP NJW1302G COLLECTOR−EMITTER SATURATION VOLTAGE (V) 5A 3A 1A 0.1 0.5 A IC = 0.1 A TJ = 25°C 0.01 0.001 1 SATURATION VOLTAGE (V) NPN NJW3281G 1 0.01 0.1 1 0.1 3A 0.5 A IC = 0.1 A TJ = 25°C 0.01 0.1 1 IB, BASE CURRENT (A) Figure 7. Saturation Region Figure 8. Saturation Region 1 25°C 0.1 −30°C 125°C IC/IB = 10 0.1 25°C −30°C 125°C 0.1 1 10 100 0.01 0.01 IC, COLLECTER CURRENT (A) 0.1 1 10 IC, COLLECTER CURRENT (A) Figure 9. VCE(sat), Collector−Emitter Saturation Voltage Figure 10. VCE(sat), Collector−Emitter Saturation Voltage VCE = 5 V BASE−EMITTER VOLTAGE (V) 1.4 1.2 1.0 0.8 0.6 −30°C 25°C 0.4 125°C 0.2 0.0 0.01 100 1.6 1.6 BASE−EMITTER VOLTAGE (V) 1A IB, BASE CURRENT (A) IC/IB = 10 0.01 0.01 5A 0.01 0.001 SATURATION VOLTAGE (V) COLLECTOR−EMITTER SATURATION VOLTAGE (V) 1 0.1 1 10 100 1.4 VCE = 5 V 1.2 1.0 0.8 0.6 −30°C 25°C 0.4 125°C 0.2 0.0 0.01 0.1 1 10 IC, COLLECTER CURRENT (A) IC, COLLECTER CURRENT (A) Figure 11. VBE(on), Base−Emitter Voltage Figure 12. VBE(on), Base−Emitter Voltage http://onsemi.com 4 100 NJW3281G (NPN) NJW1302G (PNP) TYPICAL CHARACTERISTICS PNP NJW1302G TJ = 25°C fTest = 1 MHz 1000 800 600 400 200 0 0 10 20 30 40 50 60 70 80 90 800 600 400 200 0 20 40 60 80 VCB, COLLECTER−BASE VOLTAGE (V) VCB, COLLECTER−BASE VOLTAGE (V) Figure 13. Output Capacitance Figure 14. Output Capacitance 100 10000 TJ = 25°C fTest = 1 MHz 10000 Cib, INPUT CAPACITANCE (pF) Cib, INPUT CAPACITANCE (pF) TJ = 25°C fTest = 1 MHz 1000 0 100 12000 8000 6000 4000 2000 NPN NJW3281G 1200 Cob, OUTPUT CAPACITANCE (pF) Cob, OUTPUT CAPACITANCE (pF) 1200 0 1 2 3 4 5 6 7 8 9 10 TJ = 25°C fTest = 1 MHz 8000 6000 4000 2000 0 2 4 6 8 VEB, EMITTER−BASE VOLTAGE (V) VEB, EMITTER−BASE VOLTAGE (V) Figure 15. Input Capacitance Figure 16. Input Capacitance http://onsemi.com 5 10 NJW3281G (NPN) NJW1302G (PNP) PNP NJW1302G NPN NJW3281G 100 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 100 10 mSec 10 100 mSec 1 Sec 1.0 0.1 10 mSec 10 100 mSec 1 Sec 1.0 0.1 1.0 100 10 VCE, COLLECTOR EMITTER (VOLTS) 1000 1.0 Figure 17. Active Region Safe Operating Area 100 10 VCE, COLLECTOR EMITTER (VOLTS) 1000 Figure 18. Active Region Safe Operating Area The data of Figures 17 and 18 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. http://onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−3P−3LD CASE 340AB−01 ISSUE A B A B C Q 4 DATE 30 OCT 2007 SEATING PLANE U E SCALE 1:1 A L (3°) P K 1 2 3 3X D 0.25 G NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. M A B S H J G F W DIM A B C D E F G H J K L P Q U W MILLIMETERS MIN NOM MAX 19.70 19.90 20.10 15.40 15.60 15.80 4.60 4.80 5.00 0.80 1.00 1.20 1.45 1.50 1.65 1.80 2.00 2.20 5.45 BSC 1.20 1.40 1.60 0.55 0.60 0.75 19.80 20.00 20.20 18.50 18.70 18.90 3.30 3.50 3.70 3.10 3.20 3.50 5.00 REF 2.80 3.00 3.20 GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 2: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN xxxxxG AYWW xxxxx G A Y WW = Specific Device Code = Pb−Free Package = Assembly Location = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON25095D TO−3P−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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