NL17SG125DFT2G

NL17SG125 Bus Buffer with 3-State Output The NL17SG125 MiniGatet is an advanced high−speed CMOS Bus Buffer with 3−State Output in ultra−small footprint. The NL17SG125 input structures provides protection when voltages up to 4.6 V are applied. http://onsemi.com Features High Speed: tPD = 2.4 ns (Typ) at VCC = 3.0 V, CL = 15 pF Low Power Dissipation: ICC = 0.5 mA (Max) at TA = 25°C SOT−953 CASE 527AE 4.6 V Overvoltage Tolerant (OVT) Input Pins NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant IN A 1 GND 2 OE 5 3 4 VCC OE 1 IN A 2 OUT Y GND Figure 1. SOT−953 (Top Thru View) 5 3 4 VCC OUT Y F = Specific Device Code (F with 90 degree clockwise rotation) M = Month Code UDFN6 1.0 x 1.0 CASE 517BX 1 K = Specific Device Code (K with 270 degree clockwise rotation) M = Month Code UDFN6 1.45 x 1.0 CASE 517AQ 1 6 VCC IN A 2 5 NC GND 3 4 OUT Y M SC−88A DF SUFFIX CASE 419A 1 M R = Specific Device Code (R with 180 degree clockwise rotation) M = Month Code 6 Figure 2. SC−88A (Top View) OE M K Ultra−Small Packages M 1 R • MARKING DIAGRAMS Wide Operating VCC Range: 0.9 V to 3.6 V F • • • • • • A4 M G G 1 OE A4 M G EN OUT Y IN A Figure 3. UDFN6 (Top View) Figure 4. Logic Symbol (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. FUNCTION TABLE PIN ASSIGNMENT Pin Number SOT−953 SC−88A UDFN6 1 IN A OE OE 2 GND IN A IN A 3 OE GND GND 4 OUT Y OUT Y OUT Y 5 VCC VCC NC 6 © Semiconductor Components Industries, LLC, 2014 November, 2018 − Rev. 5 = Device Code = Date Code* = Pb−Free Package A Input OE Input Y Output L H X L L H L H Z ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. VCC 1 Publication Order Number: NL17SG125/D NL17SG125 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage −0.5 to +5.5 V VIN DC Input Voltage −0.5 to +4.6 V −0.5 to VCC +0.5 −0.5 to +4.6 V VIN < GND −20 mA VOUT < GND −20 mA VOUT Parameter DC Output Voltage Output at High or Low State Power−Down Mode (VCC = 0 V) IIK DC Input Diode Current IOK DC Output Diode Current IOUT DC Output Source/Sink Current ±20 mA ICC DC Supply Current per Supply Pin ±20 mA IGND DC Ground Current per Ground Pin TSTG Storage Temperature Range ±20 mA −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias +150 °C MSL Moisture Sensitivity FR Flammability Rating VESD ILATCHUP Level 1 Oxygen Index: 28 to 34 ESD Withstand Voltage Latchup Performance UL 94 V−0 @ 0.125 in Human Body Model (Note 2) Machine Model (Note 3) >2000 >100 V Above VCC and Below GND at 125°C (Note 4) ±100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 2. Tested to EIA/JESD22−A114−A. 3. Tested to EIA/JESD22−A115−A. 4. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC Positive DC Supply Voltage 0.9 3.6 V VIN Digital Input Voltage 0.0 3.6 V 0.0 0.0 VCC 3.6 V −55 +125 °C 0 10 ns/V VOUT TA Dt / DV Output Voltage Output at High or Low State Power−Down Mode (VCC = 0 V) Operating Temperature Range Input Transition Rise or Fail Rate VCC = 3.3 V ± 0.3 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. http://onsemi.com 2 NL17SG125 DC ELECTRICAL CHARACTERISTICS TA = 255C Symbol Parameter VIH High-Level Input Voltage VIL VOH VOL Conditions Low-Level Input Voltage High-Level Output Voltage Low-Level Output Voltage VIN = VIH or VIL VIN = VIH or VIL Max TA = -555C to +1255C VCC (V) Min Min 0.9 VCC VCC 1.1 to 1.3 0.7xVCC 0.7xVCC 1.4 to 1.6 0.65xVCC 0.65xVCC 1.65 to 1.95 0.65xVCC 0.65xVCC 2.3 to 2.7 1.7 1.7 3.0 to 3.6 2.0 2.0 Max Unit V 0.9 GND GND 1.1 to 1.3 0.3xVCC 0.3xVCC 1.4 to 1.6 0.35xVCC 0.35xVCC 1.65 to 1.95 0.35xVCC 0.35xVCC 2.3 to 2.7 0.7 0.7 3.0 to 3.6 0.8 0.8 V V IOH = −20 mA 0.9 0.75 0.75 IOH = -0.3 mA 1.1 to 1.3 0.75xVCC 0.75xVCC IOH = -1.7 mA 1.4 to 1.6 0.75xVCC 0.75xVCC IOH = -3.0 mA 1.65 to 1.95 Vcc-0.45 Vcc-0.45 IOH = -4.0 mA 2.3 to 2.7 2.0 2.0 IOH = -8.0 mA 3.0 to 3.6 2.48 2.48 IOL = 20 mA 0.9 0.1 0.1 IOL = 0.3 mA 1.1 to 1.3 0.25xVCC 0.25xVCC IOL = 1.7 mA 1.4 to 1.6 0.25xVCC 0.25xVCC IOL = 3.0 mA 1.65 to 1.95 0.45 0.45 IOL = 4.0 mA 2.3 to 2.7 0.4 0.4 IOL = 8.0 mA 3.0 to 3.6 0.4 0.4 V IIN Input Leakage Current 0 ≤ VIN ≤ 3.6 V 0 to 3.6 $0.1 $1.0 mA ICC Quiescent Supply Current VIN = VCC or GND 3.6 1.0 10.0 mA IOZ 3−State Output Leakage Current VIN = VIH or VIL VOUT = 0 to 3.6 V 0.9 to 3.6 1.0 10.0 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 3 NL17SG125 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) TA = -555C to +1255C TA = 25 5C Symbol Parameter Test Condition VCC (V) Min Typ Max Min Max Unit tPLH, tPHL Propagation Delay, A to Y CL = 10 pF, RL = 1 MW 0.9 - 11.3 13.6 - 15.9 ns 1.1 to 1.3 - 8.3 10.4 - 12.8 CL = 15 pF, RL = 1 MW CL = 30 pF, RL = 1 MW tPZH, tPZL Output Enable Time, OE to Y 1.4 to 1.6 - 5.0 8.5 - 10.0 1.65 to 1.95 - 4.0 6.2 - 6.7 2.3 to 2.7 - 2.6 3.9 - 4.4 3.0 to 3.6 - 2.1 3.1 - 3.7 0.9 - 12.6 14.7 - 17.0 1.1 to 1.3 - 9.6 11.5 - 15.2 1.4 to 1.6 - 5.6 9.3 - 11.2 1.65 to 1.95 - 4.5 6.9 - 7.1 2.3 to 2.7 - 2.9 4.4 - 5.0 3.0 to 3.6 - 2.4 3.4 - 3.9 0.9 - 14.5 16.3 - 19.6 1.1 to 1.3 - 11.3 13.6 - 17.5 1.4 to 1.6 - 8.2 13.1 - 15.9 1.65 to 1.95 - 6 9.2 - 9.6 2.3 to 2.7 - 4 5.7 - 6.1 3.0 to 3.6 - 3.3 4.4 - 4.8 ns ns ns CL = 10 pF; RL = 100 kW 0.9 - 11.0 13.3 - 15.8 RL = 5 kW 1.1 to 1.3 - 8.4 10.9 - 13.0 RL = 5 kW 1.4 to 1.6 - 5.3 7.8 - 8.3 RL = 5 kW 1.65 to 1.95 - 3.9 5.5 - 5.9 RL = 5 kW 2.3 to 2.7 - 2.5 3.5 - 3.8 RL = 5 kW 3.0 to 3.6 - 2.1 2.7 - 3 ns CL = 15 pF; RL = 100 kW 0.9 - 12.0 14.8 - 17.0 RL = 5 kW 1.1 to 1.3 - 9.0 11.7 - 13.8 RL = 5 kW 1.4 to 1.6 - 5.9 8.9 - 11 RL = 5 kW 1.65 to 1.95 - 4.4 6.3 - 6.5 RL = 5 kW 2.3 to 2.7 - 2.9 3.9 - 4.2 RL = 5 kW 3.0 to 3.6 - 2.3 3 - 3.3 ns CL = 30 pF; RL = 100 kW 0.9 - 13.0 15.2 - 18.3 RL = 5 kW 1.1 to 1.3 - 10.0 13.1 - 15.2 RL = 5 kW 1.4 to 1.6 - 8.3 12.2 - 13.7 RL = 5 kW 1.65 to 1.95 - 6.1 8.6 - 9.7 RL = 5 kW 2.3 to 2.7 - 3.8 5 - 5.5 RL = 5 kW 3.0 to 3.6 - 2.9 3.8 - 4.2 http://onsemi.com 4 NL17SG125 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) (continued) TA = -555C to +1255C TA = 25 5C Symbol Parameter Test Condition tPHZ, tPLZ Output Disable Time, OE to Y CL = 10 pF; VCC (V) Min Typ Max Min Max ns RL = 100 kW 0.9 - 100.4 - - - RL = 5 kW 1.1 to 1.3 - 9.1 14.4 - 22.4 RL = 5 kW 1.4 to 1.6 - 7.1 9.1 - 10.4 RL = 5 kW 1.65 to 1.95 - 6.5 8.3 - 9 RL = 5 kW 2.3 to 2.7 - 5.8 7.3 - 8.8 RL = 5 kW 3.0 to 3.6 - 5.4 6.9 - 7.6 ns CL = 15 pF; RL = 100 kW 0.9 - 122.2 - - - RL = 5 kW 1.1 to 1.3 - 9.8 15.3 - 25.1 RL = 5 kW 1.4 to 1.6 - 7.8 9.8 - 11.3 RL = 5 kW 1.65 to 1.95 - 7.2 9.2 - 10.6 RL = 5 kW 2.3 to 2.7 - 7 8.2 - 10.3 RL = 5 kW 3.0 to 3.6 - 6.6 7.7 - 9.5 RL = 100 kW 0.9 - 217.1 - - - RL = 5 kW 1.1 to 1.3 - 13.2 19.6 - 31.9 RL = 5 kW 1.4 to 1.6 - 12.2 13.5 - 14.9 RL = 5 kW 1.65 to 1.95 - 11.4 12.7 - 13.9 RL = 5 kW 2.3 to 2.7 - 11.3 12.2 - 13.5 RL = 5 kW 3.0 to 3.6 - ns CL = 30 pF; CIN Input Capacitance CO Output Capacitance CPD Power Dissipation Capacitance (Note 5) Unit 10.2 11.5 - 12.9 0 to 3.6 3 - - - pF VO = GND 0 3 - - - pF f = 10 MHz 0.9 to 3.6 4 - - - pF - Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. http://onsemi.com 5 NL17SG125 Figure 5. Test Circuit Figure 6. tPLH, tPHL Waveforms Figure 7. tPLZ, tPHZ, tPZH, tPZL Waveforms http://onsemi.com 6 NL17SG125 ORDERING INFORMATION Package Shipping† NL17SG125P5T5G SOT−953 (Pb−Free) 8000 / Tape & Reel NL17SG125DFT2G SC−88A (Pb−Free) 3000 / Tape & Reel NLV17SG125DFT2G* SC−88A (Pb−Free) 3000 / Tape & Reel NL17SG125MU1TCG** UDFN6 1.45 x 1 mm (Pb−Free) 3000 / Tape & Reel NL17SG125MU3TCG** UDFN6 1 x 1 mm (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. **In Development MiniGate is a trademark of Semiconductor Components Industries, LLC (SCILLC). http://onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L SCALE 2:1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DATE 17 JAN 2013 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 J GENERIC MARKING DIAGRAM* C K H XXXMG G SOLDER FOOTPRINT 0.50 0.0197 XXX = Specific Device Code M = Date Code G = Pb−Free Package 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. mm Ǔ ǒinches STYLE 1: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 2: PIN 1. ANODE 2. EMITTER 3. BASE 4. COLLECTOR 5. CATHODE STYLE 3: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. CATHODE 1 STYLE 4: PIN 1. SOURCE 1 2. DRAIN 1/2 3. SOURCE 1 4. GATE 1 5. GATE 2 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 STYLE 7: PIN 1. BASE 2. EMITTER 3. BASE 4. COLLECTOR 5. COLLECTOR STYLE 8: PIN 1. CATHODE 2. COLLECTOR 3. N/C 4. BASE 5. EMITTER STYLE 9: PIN 1. ANODE 2. CATHODE 3. ANODE 4. ANODE 5. ANODE DOCUMENT NUMBER: DESCRIPTION: 98ASB42984B STYLE 5: PIN 1. CATHODE 2. COMMON ANODE 3. CATHODE 2 4. CATHODE 3 5. CATHODE 4 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SC−88A (SC−70−5/SOT−353) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−953 CASE 527AE ISSUE E DATE 02 AUG 2011 SCALE 4:1 X Y D 5 PIN ONE INDICATOR A 4 HE E 1 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A b C D E e HE L L2 L3 C TOP VIEW SIDE VIEW e L 5X 5X L3 5X L2 MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.95 1.00 1.05 0.175 REF 0.05 0.10 0.15 −−− −−− 0.15 GENERIC MARKING DIAGRAM* 5X BOTTOM VIEW XM b 1 0.08 X Y X M SOLDERING FOOTPRINT* *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 5X 0.35 5X 0.20 = Specific Device Code = Month Code PACKAGE OUTLINE 1.20 1 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON26457D SOT−953 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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