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NL17SZ10DBVT1G

NL17SZ10DBVT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TSOP-6_2.9X1.5MM

  • 描述:

    3-INPUT NAND GATE

  • 数据手册
  • 价格&库存
NL17SZ10DBVT1G 数据手册
ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Single 3-Input NAND Gate NL17SZ10 The NL17SZ10 is a single 3−input NAND Gate in tiny footprint packages. Features • • • • • • • Designed for 1.65 V to 5.5 V VCC Operation 2.4 ns tPD at VCC = 5 V (Typ) Inputs/Outputs Overvoltage Tolerant up to 5.5 V IOFF Supports Partial Power Down Protection Source/Sink 24 mA at 3.0 V Chip Complexity < 100 FETs These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MARKING DIAGRAMS 6 SC−88 CASE 419B−02 XXXMG G 1 A & B Y C SC−74 CASE 318F−05 XXX MG G UDFN6 1.45 x 1.0 CASE 517AQ XM Figure 1. Logic Symbol UDFN6 1.0 x 1.0 CASE 517BX XM 1 XX, XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2019 March, 2021 − Rev. 2 1 Publication Order Number: NL17SZ10/D NL17SZ10 A 1 6 C GND 2 5 VCC B 3 4 Y A 1 6 C GND 2 5 VCC B 3 4 Y SC−88 / SC−74 UDFN6 Figure 2. Pinout (Top View) PIN ASSIGNMENT FUNCTION TABLE (Y = ABC) Pin Function Output 1 A A B C Y 2 GND X X L H 3 B X L X H 4 Y L X X H 5 VCC H H H L 6 C Inputs H = HIGH Logic Level L = LOW Logic Level X = Either LOW or HIGH Logic Level www.onsemi.com 2 NL17SZ10 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage −0.5 to +6.5 V VIN DC Input Voltage −0.5 to +6.5 V −0.5 to VCC + 0.5 −0.5 to +6.5 −0.5 to +6.5 V VIN < GND −50 mA VOUT < GND −50 mA VOUT Characteristics DC Output Voltage Active−Mode (High or Low State) Tri−State Mode (Note 1) Power−Down Mode (VCC = 0 V) IIK DC Input Diode Current IOK DC Output Diode Current IOUT DC Output Source/Sink Current ±50 mA DC Supply Current per Supply Pin or Ground Pin ±100 mA ICC or IGND TSTG −65 to +150 °C TL Storage Temperature Range Lead Temperature, 1 mm from Case for 10 secs 260 °C TJ Junction Temperature Under Bias +150 °C qJA Thermal Resistance (Note 2) SC−88 SC−74 UDFN6 377 320 154 °C/W PD Power Dissipation in Still Air SC−88 SC−74 UDFN6 332 390 812 mW Level 1 − MSL Moisture Sensitivity FR Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in − ESD Withstand Voltage (Note 3) Human Body Model Charged Device Model 2000 1000 V $100 mA VESD ILatchup Latchup Performance (Note 4) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Applicable to devices with outputs that may be tri−stated. 2. Measured with minimum pad spacing on an FR4 board, using 10mm−by−1inch, 2 ounce copper trace no air flow per JESD51−7. 3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recommends that ESD qualification to EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A. 4. Tested to EIA/JESD78 Class II. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics VCC Positive DC Supply Voltage VIN DC Input Voltage VOUT TA tr , tf DC Output Voltage Active−Mode (High or Low State) Tri−State Mode (Note 1) Power−Down Mode (VCC = 0 V) Operating Temperature Range Input Rise and Fall Time VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 3.0 V to 3.6 V VCC = 4.5 V to 5.5 V Min Max Unit 1.65 5.5 V 0 5.5 V 0 0 0 VCC 5.5 5.5 −55 +125 °C 0 0 0 0 20 20 10 5 ns/V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 3 NL17SZ10 DC ELECTRICAL CHARACTERISTICS Symbol VIH VIL TA = 255C −555C 3 TA 3 1255C VCC (V) Min Typ Max Min Max Units High−Level Input Voltage 1.65 to 1.95 0.65 VCC − − 0.65 VCC − V 2.3 to 5.5 0.70 VCC − − 0.70 VCC − Low−Level Input Voltage 1.65 to 1.95 − − 0.35 VCC − 0.35 VCC 2.3 to 5.5 − − 0.30 VCC − 0.30 VCC Parameter Condition V VOH High−Level Output Voltage VIN = VIH or VIL IOH = −100 mA IOH = −4 mA IOH = −8 mA IOH = −16 mA IOH = −24 mA IOH = −32 mA 1.65 to 5.5 1.65 2.3 3.0 3.0 4.5 VCC − 0.1 1.29 1.9 2.4 2.3 3.8 VCC 1.4 2.1 2.7 2.5 4.0 − − − − − − VCC − 0.1 1.29 1.9 2.4 2.3 3.8 − − − − − − VOL Low−Level Output Voltage VIN = VIH or VIL IOL = 100 mA IOL = 4 mA IOL = 8 mA IOL = 16 mA IOL = 24 mA IOL = 32 mA 1.65 to 5.5 1.65 2.3 3.0 3.0 4.5 − − − − − − − 0.08 0.2 0.28 0.38 0.42 0.1 0.24 0.3 0.4 0.55 0.55 − − − − − − 0.1 0.24 0.3 0.4 0.55 0.55 Input Leakage Current VIN = 5.5 V or GND 1.65 to 5.5 − − ±0.1 − ±1.0 mA IOFF Power Off Leakage Current VIN = 5.5 V or VOUT = 5.5 V 0 − − 1.0 − 10 mA ICC Quiescent Supply Current VIN = VCC or GND 5.5 − − 1.0 − 10 mA IIN V V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. AC ELECTRICAL CHARACTERISTICS Symbol tPLH, tPHL −555C 3 TA 3 1255C Min Typ Max Min Max Units RL = 1 MW, CL = 15 pF 1.65 to 1.95 − 7.0 17.5 − 18.0 ns RL = 1 MW, CL = 15 pF 2.3 to 2.7 − 3.0 10.5 − 11.0 RL = 1 MW, CL = 15 pF 3.0 to 3.6 − 2.4 7.5 − 8.0 − 2.9 8.5 − 9.0 − 2.0 5.5 − 6.0 − 2.4 7.5 − 8.0 Parameter Propagation Delay, (A or B or C) to Y (Figures 3 and 4) TA = 255C VCC (V) Condition RL = 500 W, CL = 50 pF 4.5 to 5.5 RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF CAPACITIVE CHARACTERISTICS Symbol Typical Units Input Capacitance VCC = 5.5 V, VIN = 0 V or VCC 2.5 pF COUT Output Capacitance VCC = 5.5 V, VIN = 0 V or VCC 2.5 pF CPD Power Dissipation Capacitance (Note 5) 10 MHz, VCC = 3.3 V, VIN = 0 V or VCC 10 MHz, VCC = 5.5 V, VIN = 0 V or VCC 9 11 pF CIN Parameter Condition 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. www.onsemi.com 4 NL17SZ10 OPEN 2 x VCC Test Switch Position tPLH / tPHL Open tPLZ / tPZL 2 x VCC 50 500 500 tPHZ / tPZH GND 50 500 500 GND R1 OUTPUT DUT RL RT CL, pF RL, W R1 , W See AC Characteristics Table X = Don’t Care CL * CL includes probe and jig capacitance RT is ZOUT of pulse generator (typically 50 W) f = 1 MHz Figure 3. Test Circuit tr = 3 ns tf = 3 ns 90% 90% Vmi INPUT Vmi INPUT Vmi 10% 10% tPHL Vmi GND GND tPZL tPLH Vmo OUTPUT VCC VCC tPLZ ~VCC VOH Vmo OUTPUT Vmo VOL + VY VOL VOL tPLH OUTPUT tPHL Vmo tPZH VOH Vmo tPHZ VOH VOH − VY Vmo OUTPUT VOL ~0 V Figure 4. Switching Waveforms Vmo, V VCC, V Vmi, V tPLH, tPHL 1.65 to 1.95 VCC/2 VCC/2 VCC/2 0.15 2.3 to 2.7 VCC/2 VCC/2 VCC/2 0.15 3.0 to 3.6 VCC/2 VCC/2 VCC/2 0.3 4.5 to 5.5 VCC/2 VCC/2 VCC/2 0.3 www.onsemi.com 5 tPZL, tPLZ, tPZH, tPHZ VY, V NL17SZ10 DEVICE ORDERING INFORMATION Packages Specific Device Code Pin 1 Orientation (See below) Shipping† NL17SZ10DFT2G (In Development) SC−88 TBD Q4 3000 / Tape & Reel NL17SZ10DBVT1G SC−74 AQ Q4 3000 / Tape & Reel NL17SZ10MU1TCG (In Development) UDFN6, 1.45 x 1.0, 0.5P TBD Q4 3000 / Tape & Reel NL17SZ10MU3TCG (In Development) UDFN6, 1.0 x 1.0, 0.35P TBD Q4 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Pin 1 Orientation in Tape and Reel www.onsemi.com 6 NL17SZ10 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X 0.30 6X 0.66 2.50 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 7 DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 NL17SZ10 PACKAGE DIMENSIONS SC−74 CASE 318F−05 ISSUE N D 6 HE 1 5 4 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318F−01, −02, −03, −04 OBSOLETE. NEW STANDARD 318F−05. E b e 0.05 (0.002) q c A L A1 SOLDERING FOOTPRINT* 2.4 0.094 0.95 0.037 1.9 0.074 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8 DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0° 0.85 0.20 2.50 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 10° 0.95 1.05 0.40 0.60 2.75 3.00 − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0° 0.034 0.008 0.099 INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 10° 0.041 0.024 0.118 NL17SZ10 PACKAGE DIMENSIONS UDFN6, 1.45x1.0, 0.5P CASE 517AQ ISSUE O A B D L L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. L1 PIN ONE REFERENCE 0.10 C ÉÉÉ ÉÉÉ DETAIL A E OPTIONAL CONSTRUCTIONS ÉÉÉ ÉÉÉ EXPOSED Cu TOP VIEW 0.10 C DETAIL B MOLD CMPD DETAIL B 0.05 C 6X DIM A A1 A2 b D E e L L1 OPTIONAL CONSTRUCTIONS A MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.07 REF 0.20 0.30 1.45 BSC 1.00 BSC 0.50 BSC 0.30 0.40 −−− 0.15 MOUNTING FOOTPRINT 0.05 C A1 SIDE VIEW A2 e 6X C 6X SEATING PLANE L 1.24 3 1 DETAIL A 6X 0.53 6 0.30 PACKAGE OUTLINE 4 BOTTOM VIEW 6X 0.50 PITCH DIMENSIONS: MILLIMETERS b 0.10 C A B 0.05 C 1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NOTE 3 www.onsemi.com 9 NL17SZ10 PACKAGE DIMENSIONS UDFN6, 1x1, 0.35P CASE 517BX ISSUE O PIN ONE REFERENCE 2X 0.08 C 2X ÉÉÉ ÉÉÉ 0.08 C 0.05 C L1 A B D L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 MM FROM TERMINAL TIP. 4. PACKAGE DIMENSIONS EXCLUSIVE OF BURRS AND MOLD FLASH. L3 E DETAIL A ALTERNATE TERMINAL CONSTRUCTION ÉÉ ÉÉ ÇÇ TOP VIEW EXPOSED Cu DETAIL B A3 A1 MOLD CMPD DETAIL B A ALTERNATE CONSTRUCTION 0.05 C SIDE VIEW C SEATING PLANE 3 1 6X MILLIMETERS MIN MAX 0.50 0.65 0.00 0.05 0.13 REF 0.17 0.23 1.00 BSC 1.00 BSC 0.35 0.20 0.40 −−− 0.15 0.26 0.33 RECOMMENDED SOLDERING FOOTPRINT* e DETAIL A DIM A A1 A3 b D E e L L1 L3 L 6X 0.25 6X 0.52 1.20 6 4 BOTTOM VIEW 6X PACKAGE OUTLINE b 0.07 M C A B 0.05 M C 1 0.35 PITCH NOTE 3 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 10 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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