NLAS4599DFT2G

NLAS4599 Low Voltage Single Supply SPDT Analog Switch The NLAS4599 is an advanced high speed CMOS single pole − double throw analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining low power dissipation. This switch controls analog and digital voltages that may vary across the full power−supply range (from VCC to GND). The device has been designed so the ON resistance (RON) is much lower and more linear over input voltage than RON of typical CMOS analog switches. The channel select input is compatible with standard CMOS outputs. The channel select input structure provides protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. This input structure helps prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. • • • • • • • • • • Channel Select Input Over−Voltage Tolerant to 5.5 V Fast Switching and Propagation Speeds Break−Before−Make Circuitry Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C Diode Protection Provided on Channel Select Input Improved Linearity and Lower ON Resistance over Input Voltage Latch−up Performance Exceeds 300 mA ESD Performance: Human Body Model > 2000 V; Machine Model > 200 V Chip Complexity: 38 FETs Pb−Free Packages are Available http://onsemi.com MARKING DIAGRAMS TSOP−6 DT SUFFIX CASE 318G 1 A0 MG G 1 6 SC−88 DF SUFFIX CASE 419B 1 A0 MG G 1 A0 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. FUNCTION TABLE 1 6 NO V+ 2 5 COM GND 3 4 NC SELECT Select ON Channel L H NC NO Figure 1. Pin Assignment NO U U COM 2X0 2X1 U CHANNEL SELECT NC Figure 2. Logic Symbol *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2011 March, 2011 − Rev. 11 1 Publication Order Number: NLAS4599/D NLAS4599 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit −0.5 to +7.0 V −0.5 ≤ VIS ≤ VCC )0.5 V −0.5 ≤ VI ≤ + 7.0 V $50 mA 200 200 mW −65 to +150 °C Lead Temperature, 1mm from Case for 10 seconds 260 °C TJ Junction Temperature Under Bias 150 °C VESD ESD Withstand Voltage Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) 2000 200 N/A V ILATCH−UP Latch−Up Performance Above VCC and Below GND at 125°C (Note 4) $300 mA JA Thermal Resistance 333 333 °C/W VCC Positive DC Supply Voltage VIS Analog Input Voltage (VNO or VCOM) VIN Digital Select Input Voltage IIK DC Current, Into or Out of Any Pin PD Power Dissipation in Still Air TSTG Storage Temperature Range TL SC−88 TSOP−6 SC−88 TSOP−6 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit 2.0 5.5 V 5.5 V VCC DC Supply Voltage VIN Digital Select Input Voltage GND VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range −55 +125 °C tr, tf Input Rise or Fall Time, SELECT 0 0 100 20 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C 80 TJ = 90°C Time, Years TJ = 100°C Time, Hours TJ = 110°C Junction Temperature 5C ns/V FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 120°C DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES TJ = 130°C NORMALIZED FAILURE RATE VCC = 3.3 V + 0.3 V VCC = 5.0 V + 0.5 V 1 1 10 TIME, YEARS 100 1000 Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 2 NLAS4599 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Condition VCC −55 to 255C