NLAS4717EP

NLAS4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The NLAS4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw (SPDT) switch featuring low RDS(on) of 4.5 W at 3.0 V. The device also features guaranteed Break−Before−Make (BBM) switching, assuring the switches never short the driver. The NLAS4717EP is available in two small size packages: Microbump: 2.0 x 1.5 mm WQFN−10: 1.4 x 1.8 mm Features http://onsemi.com MARKING DIAGRAMS 4717EP AYWWG G A1 A1 Microbump−10 CASE 489AA • • • • • • • • • • • • • • • Low RDS(on): 4.5 W @ 3.0 V Matching Between the Switches ±0.5 W Wide Voltage Range: 1.8 V to 5.5 V High Bandwidth > 90 MHz 1.65 V to 5.5 V Operating Range Low Threshold Voltages on Pins 4 and 8 (CTRL Pins) Ultra−Low Charge Injection ≤ 6.0 pC Low Standby Current: ICC = 1.0 nA (Max) @ TA = 25°C *OVT on Pins 4 and 8 (CTRL Logic Pins) These are Pb−Free Devices Cell Phones PDAs MP3s Digital Still Cameras USB 2.0 Full Speed (USB1.1) − 12 Mbps Compliant A = Assembly Location Y = Year W, WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 1 WQFN−10 CASE 488AQ AWMG G Typical Applications AW = Specific Device Code M = Date Code G = Pb−Free Device (Note: Microdot may be in either location) FUNCTION TABLE IN_ 0 1 NO_ OFF ON NC_ ON OFF Important Information • ESD Protection: • Latchup Max Rating: 200 mA (Per JEDEC EIA/JESD78) • Pin−to−Pin Compatible with MAX4717 *OVT HBM = 2500 V, MM = 200 V ORDERING INFORMATION Device Package Shipping † • Overvoltage Tolerant (OVT) specific pins operate higher than normal supply voltages, with no damage to the devices or to signal integrity. 3000 / NLAS4717EPFCT1G Microbump−10 Tape & Reel (Pb−Free) NLAS4717EPMTR2G WQFN−10 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 March, 2006 − Rev. 5 Publication Order Number: NLAS4717EP/D NLAS4717EP NO1 GND B1 NC1 C1 A1 NC2 COM1 3 10 NO2 2 VCC 1 IN1 COM1 NO1 C2 C3 C4 B4 VCC Microbump (Top View) A2 A3 A4 IN2 COM2 IN1 4 9 COM2 NC1 NO2 5 6 GND 7 NC2 8 IN2 WQFN (Top View) Figure 1. Device Circuit Diagrams and Pin Configurations MAXIMUM RATINGS Symbol V+ VIS VIN IIK IPK DC Supply Voltage Analog Input Voltage (VNO, VNC, or VCOM) (Note 1) Digital Select Input Voltage DC Current, Into or Out of Any Pin (Continuous) Peak Current (10% Duty Cycle) Parameter Value *0.5 to )7.0 *0.5 v VIS v VCC )0.5 *0.5 v VI v)7.0 $100 $200 Unit V V V mA mA Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Signal voltage on NC, NO, and COM exceeding VCC or GND are clamped by the internal diodes. Limit forward diode current to maximum current rating. RECOMMENDED OPERATING CONDITIONS Symbol V+ VIN VIS TA tr, tf DC Supply Voltage Digital Select Input Voltage Analog Input Voltage (NC, NO, COM) Operating Temperature Range Input Rise or Fall Time, SELECT VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V Parameter Min 1.8 GND GND −40 0 0 Max 5.5 5.5 VCC +85 100 20 Unit V V V °C ns/V http://onsemi.com 2 NLAS4717EP ANALOG SWITCH DC CHARACTERISTICS −40°C to +85°C Symbol VIH Parameter Input Logic High Voltage Condition VOUT = 0.1 V IOUT ≤ 20 mA VIL Input Logic Low Voltage VOUT = −VCC − 0.1 V IOUT ≤ 20 mA IIN VCC ICC Input Leakage Current Power Supply Range Supply Current VIN = VCC or GND All VIN = VCC or GND IOUT = 0 mA VCC (V) 1.65 to 2.2 2.7 to 3.6 4.5 to 5.5 1.65 to 2.2 2.7 to 3.6 4.5 to 5.5 5.5 − 1.8 3.3 5.5 Min VCC x 0.55 VCC x 0.5 2.0 − − − −100 1.65 − − − Max − − − VCC x 0.2 VCC x 0.2 0.8 +100 5.5 1.0 1.0 1.0 nA V mA V Unit V ANALOG SWITCH CHARACTERISTICS − Digital Section (Voltages Referenced to GND) −40°C to +85°C Symbol RON Parameter ON Resistance (Note 2) Condition ICOM = 10 mA VIS = 0 to VCC VCC (V) 3.0 5.0 DRON ON Resistance Match Between Channels (Note 2 and 3) ICOM = 10 mA VIS = 0 to VCC 3.0 Min − − − Typ 3.2 2.1 0.1 Max 4.5 3.5 0.4 W Unit W 5.0 RFLAT[ON] ON Resistance Flatness (Note 4) ICOM = 10 mA VIS = 0 to VCC 5.0 INO_[OFF] INC_[OFF] NO_, NC_ Off−Leakage Current (Note 5) VCOM = 0.3 V or 3.3 V VNO or VNC = 0.3 V or 3.3 V VCOM = 0 V or 5.0 V VNO or VNC = 0 V or 5.0 V ICOM_[ON] COM_ On−Leakage Current (Note 5) VCOM = 0.3 V or 3.3 V VNO or VNC = 0.3 V or 3.3 V VCOM = 0 V or 5.0 V VNO or VNC = 0 V or 5.0 V 5.5 3.6 5.5 3.6 3.0 − − 0.1 1.12 0.4 1.5 W − −1.0 0.55 0.01 1.36 +1.0 nA −1.0 0.01 +1.0 −2.0 0.01 +2.0 nA −2.0 0.01 +2.0 http://onsemi.com 3 NLAS4717EP ANALOG SWITCH AC CHARACTERISTICS −40°C to +85°C Symbol tON Parameter Turn−On Time Condition VNC_, VNO_ = VIH or VIL RL = 300 W, CL = 35 pF VIN[x] = VIH or VIL tOFF Turn−Off Time VNC_, VNO_ = VIH or VIL RL = 300 W, CL = 35 pF VIN[x] = VIH or VIL tBBM Break−Before−Make Time Delay (Note 5) Skew (Note 5) VNC_, VNO_ = 1.5 V RL = 300 W, CL = 35 pF RS = 39 W, CL = 50 pF − − 0.15 2.0 nS − − 8.0 − nS 1.8 to 5.5 − − 40 nS VCC (V) 1.8 to 5.5 Min − Typ − Max 30 Unit nS tSKEW 2. 3. 4. 5. RON characterized for VCC range (1.65 V to 5.5 V). DRON = RON(MAX) − RON(MIN). RFLAT[ON] = RON(MAX) − RON(MIN), measured over VCC range. Guaranteed by design. ANALOG SWITCH APPLICATION CHARACTERISTICS −40°C to +85°C Symbol Q Parameter Charge Injection Condition VIN = VCC to GND RIn = 0 W, CL = 1.0 nF Q = CL − DVOUT VISO Off−Isolation f = 10 MHz VNO_, VNC_ = 1.0 Vp−p RL = 50 W, CL = 5.0 pF f = 1.0 MHz VNO_, VNC_ = 1.0 Vp−p RL = 50 W, CL = 5.0 pF VCT Cross−Talk f = 10 MHz VNO_, VNC_ = 1.0 Vp−p RL = 50 W, CL = 5.0 pF f = 1.0 MHz VNO_, VNC_ = 1.0 Vp−p RL = 50 W, CL = 5.0 pF BW On−Channel −3.0 db Bandwidth Total Harmonic Distortion NO_, NC_ OFF−Capacitance NO_, NC_ ON−Capacitance Signal = 0 dB RL = 50 W, CL = 5.0 pF VCOM = 2.0 Vp−p, RL = 600 W, TA = 25°C F = 1.0 MHz F = 1.0 MHz − − − 0.02 15 38 % pF pF 1.8 to 5.0 90 MHz −53 1.65 to 5.5 −35 dB −110 1.65 to 5.5 −70 dB VCC (V) 3.0 5.0 Min Typ 6.0 9.0 Max Unit pC THD CNO_[OFF] CNC_[OFF] CNO_[ON] CNC_[ON] http://onsemi.com 4 NLAS4717EP 2.0 +85°C RDS(on) (W) +25°C 1.0 −40°C 3.0 2.5 2.0 1.5 1.0 0.5 0.5 0.0 0.0 0.0 0.0 +85°C +25°C −40°C 1.5 RDS(on) (W) 1.0 2.0 VCOM (V) 3.0 4.0 5.0 0.5 1.0 1.5 VCOM (V) 2.0 2.5 3.0 Figure 2. RDS(on) @ VCC = 5.0 V Figure 3. RDS(on) @ VCC = 3.0 V 1.5 1.4 1.3 RDS(on) (W) 1.2 1.1 1.0 0.9 0.8 −40C 5.0 V RDS(on) (W) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 −40C 3.0 V +25C TEMPERATURE (°C) +85C +25C TEMPERATURE (°C) +85C Figure 4. Delta RDS(on) @ VCC = 5.0 V Figure 5. Delta RDS(on) @ VCC = 3.0 V 8 6 4 2 Q (cP) 0 −2 −4 −6 −8 −10 0.0 3.0 V 5.0 V THD (%) 1 0.1 3.0 V 0.01 1.0 2.0 VCOM (V) 3.0 4.0 5.0 10 100 1000 FREQUENCY (Hz) 10000 100000 Figure 6. Charge Injection Figure 7. Total Harmonic Distortion http://onsemi.com 5 NLAS4717EP 20 0 −20 −40 (dB) −60 −80 −100 −120 −140 0.001 OFF−Isolation VCC = 3.0 V to 5.0 V TA = −40°C to +85°C 0.1 1 (MHz) 10 100 0.1 1 10 (MHz) 100 1000 Cross−Talk VCC = 1.65 V to 5.5 V (dB) 10 0 Bandwidth −3 dB −10 degress 0 Phase −30 deg −45 0.01 Figure 8. Frequency Response Figure 9. Bandwidth and Phase http://onsemi.com 6 NLAS4717EP DUT VCC 0.1 mF 300 W Output VOUT 35 pF 90% Output Input GND tBMM 90% of VOH VCC Switch Select Pin GND Figure 10. tBBM (Time Break−Before−Make) VCC DUT VCC 0.1 mF Open Output VOUT 300 W 35 pF Output VOL Input tON tOFF Input 0V VOH 90% 90% 50% 50% Figure 11. tON/tOFF VCC DUT Output Open 300 W VOUT 35 pF Input VCC 50% 0V VOH Output VOL 10% 10% 50% Input tOFF tON Figure 12. tON/tOFF http://onsemi.com 7 NLAS4717EP 50 W Reference Input Output 50 W Generator 50 W DUT Transmitted Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. VISO = Off Channel Isolation = 20 Log VONL = On Channel Loss = 20 Log VOUT VIN for VIN at 100 kHz VOUT VIN for VIN at 100 kHz to 50 MHz Bandwidth (BW) = the frequency 3.0 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 W Figure 13. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT Open Output VIN VCC GND CL Output Off Off DVOUT VIN On Figure 14. Charge Injection: (Q) http://onsemi.com 8 NLAS4717EP PACKAGE DIMENSIONS Microbump−10 CASE 489AA−01 ISSUE A 4X D 0.10 C PIN ONE CORNER A B E NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. MILLIMETERS DIM MIN MAX A −−− 0.650 A1 0.210 0.270 A2 0.280 0.380 D 1.965 BSC E 1.465 BSC b 0.250 0.350 e 0.500 BSC D1 1.500 BSC E1 1.000 BSC A1 0.10 C A2 0.075 C A C SEATING PLANE D1 e 10 X b C B A 1 2 3 4 0.15 C A B 0.05 C E1 e http://onsemi.com 9 NLAS4717EP PACKAGE DIMENSIONS WQFN10, 1.4x1.8x0.4P CASE 488AQ−01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. DIM A A1 A3 b D E e L L1 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.050 0.20 REF 0.15 0.25 1.40 BSC 1.80 BSC 0.40 BSC 0.30 0.50 0.40 0.60 D A PIN 1 REFERENCE 2X 0.15 C 0.15 C 2X 0.10 C 0.08 C A1 A3 3 9XL 6 1 5 L1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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ÉÉ ÉÉ e 10 10 X E B A SEATING PLANE C MOUNTING FOOTPRINT 1.700 0.0669 0.663 0.0261 0.200 0.0079 1 9X e/2 0.563 0.0221 b 0.10 C A B 0.05 C NOTE 3 2.100 0.0827 0.400 0.0157 PITCH 10 X 0.225 0.0089 SCALE 20:1 mm inches http://onsemi.com 10 NLAS4717EP/D