NLAS5223LMNR2G

NLAS5223, NLAS5223L Analog Switch, Dual SPDT, Ultra-Low 0.5 W The NLAS5223 is an advanced CMOS analog switch fabricated in Sub−micron silicon gate CMOS technology. The device is a dual Independent Single Pole Double Throw (SPDT) switch featuring Ultra−Low RON of 0.5 , at VCC = 3.0 $ 0.3 V. The part also features guaranteed Break Before Make (BBM) switching, assuring the switches never short the driver. www.onsemi.com MARKING DIAGRAM Features • • • • • • • • • • • • • • Ultra−Low RON, t0.5  at VCC = 3.0 $ 0.3 V NLAS5223 Interfaces with 2.8 V Chipset NLAS5223L Interfaces with 1.8 V Chipset Single Supply Operation from 1.65−3.6 V Smallest 1.4 x 1.8 x 0.75 mm Thin QFN Package Full 0−VCC Signal Handling Capability High Off−Channel Isolation Low Standby Current, t50 nA Low Distortion RON Flatness of 0.15  High Continuous Current Capability $300 mA Through Each Switch Large Current Clamping Diodes at Analog Inputs $100 mA Continuous Current Capability ESD Human Body Model > 2000 V These are Pb−Free Devices WQFN−10 CASE 488AQ XXMG G 1 XX = Specific Device Code AU = NLAS5223 AV = NLAS5223L M = Date Code G = Pb−Free Device (Note: Microdot may be in either location) NC2 GND 7 6 IN2 8 5 NC1 COM2 9 4 IN1 10 3 COM1 NO2 Applications • • • • Cell Phone Audio Block Speaker and Earphone Switching Ring−Tone Chip / Amplifier Switching Modems 1 2 VCC NO1 FUNCTION TABLE IN 1, 2 NO 1, 2 NC 1, 2 0 1 OFF ON ON OFF ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 6 1 Publication Order Number: NLAS5223/D NLAS5223, NLAS5223L COM NO NC IN Figure 1. Logic Equivalent Circuit PIN DESCRIPTION QFN PIN # Symbol Name and Function 2, 5, 7, 10 NC1 to NC2, NO1 to NO2 4, 8 IN1 and IN2 3, 9 COM1 and COM2 6 GND Ground (V) 1 VCC Positive Supply Voltage Independent Channels Controls Common Channels MAXIMUM RATINGS Symbol Parameter Value Unit −0.5 to +4.6 V −0.5 v VIS v VCC + 0.5 V −0.5 v VIN v +4.6 V VCC Positive DC Supply Voltage VIS Analog Input Voltage (VNO, VNC, or VCOM) VIN Digital Select Input Voltage Ianl1 Continuous DC Current from COM to NC/NO ±300 mA Ianl−pk1 Peak Current from COM to NC/NO, 10 Duty Cycle (Note 1) ±500 mA Iclmp Continuous DC Current into COM/NO/NC with Respect to VCC or GND ±100 mA Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Defined as 10% ON, 90% OFF Duty Cycle. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage 1.65 3.6 V VIN Digital Select Input Voltage (OVT) Overvoltage Tolerance GND 3.6 V VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range −40 +85 °C tr, tf Input Rise or Fall Time, SELECT 20 10 ns/V VCC = 1.6 V − 2.7 V VCC = 3.0 V − 3.6 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NLAS5223, NLAS5223L NLAS5223 DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND) Guaranteed Limit VCC 25°C −40°C to +85°C Unit VIH Minimum High−Level Input Voltage, Select Inputs 3.0 3.6 1.4 1.7 1.4 1.7 V VIL Maximum Low−Level Input Voltage, Select Inputs 3.0 3.6 0.7 0.8 0.7 0.8 V IIN Maximum Input Leakage Current, Select Inputs VIN = 3.6 V or GND 3.6 ±0.1 ±1.0 A IOFF Power Off Leakage Current VIN = 3.6 V or GND 0 ±0.5 ±2.0 A ICC Maximum Quiescent Supply Current (Note 2) Select and VIS = VCC or GND 1.65 to 3.6 ±1.0 ±2.0 A Symbol Parameter Condition 2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. NLAS5223 DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION Guaranteed Maximum Limit 25°C Max Unit RON NC/NO On−Resistance (Note 3) VIN = VIL or VIN = VIH VIS = GND to VCC ICOM = 100 mA 3.0 3.6 0.3 0.3 0.4 0.4  RFLAT NC/NO On−Resistance Flatness (Notes 3 and 4) ICOM = 100 mA VIS = 0 to VCC 3.0 3.6 0.15 0.15 0.15 0.15  RON On−Resistance Match Between Channels (Notes 3 and 5) VIS = 1.5 V; ICOM = 100 mA VIS = 1.8 V; ICOM = 100 mA 3.0 0.05 0.05  3.6 0.05 0.05 Symbol Parameter Condition VCC Min −40°C to +85°C Max Min INC(OFF) INO(OFF) NC or NO Off Leakage Current (Note 3) VIN = VIL or VIH VNO or VNC = 0.3 V VCOM = 3.3 V 3.6 −10 10 −100 100 nA ICOM(ON) COM ON Leakage Current (Note 3) VIN = VIL or VIH VNO 0.3 V or 3.3 V with VNC floating or VNC 0.3 V or 3.3 V with VNO floating VCOM = 0.3 V or 3.3 V 3.6 −10 10 −100 100 nA 3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 4. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog signal ranges. 5. RON = RON(MAX) − RON(MIN) between NC1 and NC2 or between NO1 and NO2. www.onsemi.com 3 NLAS5223, NLAS5223L NLAS5223L DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND) Guaranteed Limit VCC 25°C −40°C to +85°C Unit VIH Minimum High−Level Input Voltage, Select Inputs 3.0 3.6 1.1 1.3 1.1 1.3 V VIL Maximum Low−Level Input Voltage, Select Inputs 3.0 3.6 0.5 0.5 0.5 0.5 V IIN Maximum Input Leakage Current, Select Inputs VIN = 3.6 V or GND 3.6 ±0.1 ±1.0 A IOFF Power Off Leakage Current VIN = 3.6 V or GND 0 ±0.5 ±2.0 A ICC Maximum Quiescent Supply Current (Note 6) Select and VIS = VCC or GND 1.65 to 3.6 ±1.0 ±2.0 A Symbol Parameter Condition 6. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. NLAS5223L DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION Guaranteed Maximum Limit 25°C Max Unit RON NC/NO On−Resistance (Note 7) VIN = VIL or VIN = VIH VIS = GND to VCC ICOM = 100 mA 3.0 3.6 0.3 0.3 0.4 0.4  RFLAT NC/NO On−Resistance Flatness (Notes 7 and 8) ICOM = 100 mA VIS = 0 to VCC 3.0 3.6 0.15 0.15 0.15 0.15  RON On−Resistance Match Between Channels (Notes 7 and 9) VIS = 1.5 V; ICOM = 100 mA VIS = 1.8 V; ICOM = 100 mA 3.0 0.05 0.05  3.6 0.05 0.05 Symbol Parameter Condition VCC Min −40°C to +85°C Max Min INC(OFF) INO(OFF) NC or NO Off Leakage Current (Note 7) VIN = VIL or VIH VNO or VNC = 0.3 V VCOM = 3.3 V 3.6 −10 10 −100 100 nA ICOM(ON) COM ON Leakage Current (Note 7) VIN = VIL or VIH VNO 0.3 V or 3.3 V with VNC floating or VNC 0.3 V or 3.3 V with VNO floating VCOM = 0.3 V or 3.3 V 3.6 −10 10 −100 100 nA 7. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 8. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog signal ranges. 9. RON = RON(MAX) − RON(MIN) between NC1 and NC2 or between NO1 and NO2. www.onsemi.com 4 NLAS5223, NLAS5223L AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit Symbol Parameter Test Conditions VCC (V) VIS (V) 25°C Min Typ* −40°C to +85°C Max Min Max Unit tON Turn−On Time RL = 50 , CL = 35 pF (Figures 3 and 4) 2.3 − 3.6 1.5 50 60 ns tOFF Turn−Off Time RL = 50 , CL = 35 pF (Figures 3 and 4) 2.3 − 3.6 1.5 30 40 ns tBBM Minimum Break−Before−Make Time VIS = 3.0 RL = 50 , CL = 35 pF (Figure 2) 3.0 1.5 ns 2 15 Typical @ 25, VCC = 3.6 V CIN Control Pin Input Capacitance 3.5 pF CNO/NC NO, NC Port Capacitance 75 pF CCOM COM Port Capacitance When Switch is Enabled 240 pF *Typical Characteristics are at 25°C. ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Parameter Condition 25°C VCC (V) Typical Unit BW Maximum On−Channel −3 dB Bandwidth or Minimum Frequency Response VIN centered between VCC and GND (Figure 5) 1.65 − 3.6 17 MHz VONL Maximum Feed−through On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 5) 1.65 − 3.6 −0.06 dB VISO Off−Channel Isolation f = 100 kHz; VIS = 1 V RMS; CL = 5.0 pF VIN centered between VCC and GND (Figure 5) 1.65 − 3.6 −65 dB Q Charge Injection Select Input to Common I/O VIN = VCC to GND, RIS = 0 W, CL = 1.0 nF Q = CL x DVOUT (Figure 6) 1.65 − 3.6 38 pC THD Total Harmonic Distortion THD + Noise FIS = 20 Hz to 20 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 2.0 V RMS 3.0 0.12 % VCT Channel−to−Channel Crosstalk f = 100 kHz; VIS = 1.0 V RMS, CL = 5.0 pF, RL = 50  VIN centered between VCC and GND (Figure 5) 1.65 − 3.6 −70 dB 10. Off−Channel Isolation = 20log10 (VCOM/VNO), VCOM = output, VNO = input to off switch. www.onsemi.com 5 NLAS5223, NLAS5223L VCC DUT VCC Input Output GND VOUT 0.1 F 50  tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 2. tBBM (Time Break−Before−Make) VCC Input DUT VCC 0.1 F 50% Output VOUT Open 50% 0V 50  VOH 90% 35 pF 90% Output VOL Input tON tOFF Figure 3. tON/tOFF VCC VCC Input DUT Output 50  50% 0V VOUT Open 50% VOH 35 pF Output Input tOFF Figure 4. tON/tOFF www.onsemi.com 6 10% 10% VOL tON NLAS5223, NLAS5223L 50  DUT Reference Transmitted Input Output 50  Generator 50  Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log ǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50  Figure 5. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off VIN Figure 6. Charge Injection: (Q) www.onsemi.com 7 On Off VOUT NLAS5223, NLAS5223L 0 0 −10 −3 −20 −30 −6 BW (dB) XT (dB) −40 −50 −60 −9 −12 −70 −80 −15 −90 −100 0.01 0.1 1 10 −18 0.01 100 0.1 FREQUENCY (MHz) 100 FREQUENCY (MHz) Figure 7. Cross Talk vs. Frequency @ VCC = 3.6 V Figure 8. Bandwidth vs. Frequency 0.4 0.12 85°C 0.35 0.1 0.3 RON () 0.08 THD (%) 10 1 0.06 0.04 25°C 0.25 −40°C 0.2 0.15 0.1 0.02 0.05 0 10 100 1000 10000 0 100000 0 0.5 1 1.5 FREQUENCY (Hz) 2 2.5 3 VIN (V) Figure 9. Total Harmonic Distortion Figure 10. On−Resistance vs. Input Voltage @ VCC = 3.0 V 0.35 0.35 0.3 85°C 0.3 3.0 V 0.25 RON () RON () 25°C 0.2 −40°C 0.15 0.25 3.6 V 0.2 0.1 0.15 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 0.1 4 0 VIN (V) 0.5 1 1.5 2 2.5 3 3.5 VIN (V) Figure 11. On−Resistance vs. Input Voltage @ VCC = 3.6 V Figure 12. On−Resistance vs. Input Voltage www.onsemi.com 8 4 NLAS5223, NLAS5223L ORDERING INFORMATION Device Package Shipping† NLAS5223MNR2G WQFN−10 (Pb−Free) 3000 / Tape & Reel NLAS5223LMNR2G WQFN−10 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WQFN10, 1.4x1.8, 0.4P CASE 488AQ−01 ISSUE C DATE 19 JUN 2007 1 SCALE 5:1 D ÉÉ ÉÉ ÉÉ PIN 1 REFERENCE 2X 2X 0.15 C M1 E DETAIL A Bottom View (Optional) 0.15 C B EXPOSED Cu A 0.10 C 0.08 C A1 A1 A3 3 9X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. EDGE OF PACKAGE A 5 L C SEATING PLANE ÉÉÉ ÉÉÉ DIM A A1 A3 b D E e L L1 M1 MOLD CMPD A3 DETAIL B Side View (Optional) MILLIMETERS MIN MAX 0.70 0.80 0.00 0.050 0.20 REF 0.15 0.25 1.40 BSC 1.80 BSC 0.40 BSC 0.30 0.50 0.40 0.60 0.00 0.05 e/2 MOUNTING FOOTPRINT e 1.700 0.0669 6 1 0.663 0.0261 10 L1 10 X b 0.10 C A B 0.05 C 0.200 0.0079 DESCRIPTION: 1 NOTE 3 2.100 0.0827 0.400 0.0157 PITCH DOCUMENT NUMBER: 98AON20791D WQFN10, 1.4 X 1.8, 0.4P 9X 0.563 0.0221 10 X 0.225 0.0089 SCALE 20:1 mm Ǔ ǒinches Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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