NRVB120ESFT3G

MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS Features • • • • • • • • Guardring for Stress Protection Low Leakage 150°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Rating: ♦ Human Body Model = 3B ♦ Machine Model = C NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* Mechanical Characteristics • • • • • • Device Marking: L2E Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds SOD−123FL CASE 498 MARKING DIAGRAM L2EMG G L2E = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBR120ESFT1G SOD−123FL (Pb−Free) 3,000/ Tape & Reel ** NRVB120ESFT1G SOD−123FL (Pb−Free) 3,000/ Tape & Reel ** MBR120ESFT3G SOD−123FL (Pb−Free) 10,000 / Tape & Reel *** NRVB120ESFT3G SOD−123FL (Pb−Free) 10,000 / Tape & Reel *** Device ** 8 mm Tape, 7” Reel *** 8 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 4 1 Publication Order Number: MBR120ESFT1/D MBR120ESF, NRVB120ESF MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 140°C) Symbol Value Unit VRRM VRWM VR 20 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TL = 125°C) IFRM Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM Storage Temperature Tstg −65 to 150 °C Operating Junction Temperature TJ −65 to 150 °C dv/dt 10,000 V/ms Voltage Rate of Change (Rated VR, TJ = 25°C) 2.0 40 A A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) Symbol Value Unit Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Characteristic Symbol VF Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 3), See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 Value Unit TJ = 25°C TJ = 100°C 0.455 0.530 0.595 0.360 0.455 0.540 TJ = 25°C TJ = 100°C 10 1.0 0.5 1600 500 300 V mA iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR120ESF, NRVB120ESF 10 TJ = 150°C TJ = 25°C TJ = 100°C TJ = −40°C 1.0 0.1 0.4 0.2 0.6 0.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 150°C TJ = 100°C 1.0 TJ = 25°C 0.1 0.2 10E−3 1E−3 TJ = 150°C 100E−6 TJ = 100°C 1E−6 TJ = 25°C 0 5.0 10 20 15 1E−3 TJ = 100°C 10E−6 TJ = 25°C 1E−6 10E−9 0 5.0 10 15 20 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current dc 1.6 1.4 freq = 20 kHz SQUARE WAVE 1.2 1.0 Ipk/Io = p 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 45 TJ = 150°C 100E−9 1.8 25 10E−3 100E−6 10E−6 100E−9 IO, AVERAGE FORWARD CURRENT (AMPS) 0.8 100E−3 PFO, AVERAGE DISSIPATION (WATTS) IR, REVERSE CURRENT (AMPS) 100E−3 0 0.6 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 10E−9 0.4 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 65 85 105 125 145 165 0.7 0.6 Ipk/Io = p 0.5 dc SQUARE WAVE Ipk/Io = 5 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 1.6 MBR120ESF, NRVB120ESF 155 1000 TJ, DERATED OPERATING TEMPERATURE (°C) C, CAPACITANCE (pF) 153 TJ = 25°C 100 151 RqJA = 25.6°C/W 149 130°C/W 147 145 235°C/W 143 141 324.9°C/W 139 400°C/W 137 10 0 2.0 4.0 6.0 8.0 10 12 14 16 18 135 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* 20 r(t), TRANSIENT THERMAL RESISTANCE * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax − r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1000 D = 0.5 100 0.2 0.1 0.05 10 P(pk) 0.01 t1 t2 1 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.001 0.01 0.1 t1, TIME (sec) Figure 9. Thermal Response http://onsemi.com 4 1 qJA = 321.8 °C/W 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D DATE 10 MAY 2013 SCALE 4:1 E D q 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. 2 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE SIDE VIEW 2X b INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° (Note: Microdot may be in either location) 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° XXX = Specific Device Code M = Date Code G = Pb−Free Package RECOMMENDED SOLDERING FOOTPRINT* 1.22 MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − XXXMG G L BOTTOM VIEW 2X MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° GENERIC MARKING DIAGRAM* c 2X A1 DIM A A1 b c D E L HE q *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2X ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11184D SOD−123FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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