MBR120ESFT3

MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. Features http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS • • • • • • • Guardring for Stress Protection Low Leakage 150°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C ESD Ratings: Human Body Model, 3B Pb−Free Packages are Available SOD−123FL CASE 498 PLASTIC MARKING DIAGRAM Mechanical Characteristics • Reel Options: MBR120ESFT1 = 3,000 per 7″ reel/8 mm tape • • • • • • L2EMG G MBR120ESFT3 = 10,000 per 13″ reel/8 mm tape Device Marking: L2E Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds L2E = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBR120ESFT1 Package Shipping † SOD−123FL 3000/Tape & Reel MBR120ESFT1G SOD−123FL 3000/Tape & Reel (Pb−Free) MBR120ESFT3 SOD−123FL 10000/Tape & Reel MBR120ESFT3G SOD−123FL 10000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 July, 2005 − Rev. 2 Publication Order Number: MBR120ESFT1/D MBR120ESFT1 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 140°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TL = 125°C) Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Symbol VRRM VRWM VR IO IFRM IFSM Tstg TJ dv/dt Value 20 Unit V 1.0 2.0 40 −65 to 150 −65 to 150 10,000 A A A °C °C V/ms Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). Symbol Rtjl Rtjl Rtja Rtja Value 26 21 325 82 Unit °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current (Note 3), See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. IR VF TJ = 25°C 0.455 0.530 0.595 TJ = 25°C 10 1.0 0.5 TJ = 100°C 0.360 0.455 0.540 TJ = 100°C 1600 500 300 mA V http://onsemi.com 2 MBR120ESFT1 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 TJ = 150°C TJ = 100°C TJ = 25°C TJ = −40°C 1.0 10 TJ = 150°C TJ = 100°C 1.0 TJ = 25°C 0.1 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0.2 0.4 0.6 0.8 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E−3 IR, REVERSE CURRENT (AMPS) 10E−3 1E−3 TJ = 150°C TJ = 100°C IR, MAXIMUM REVERSE CURRENT (AMPS) 100E−3 10E−3 1E−3 TJ = 150°C TJ = 100°C 100E−6 10E−6 1E−6 100E−6 10E−6 1E−6 TJ = 25°C 100E−9 10E−9 0 5.0 TJ = 25°C 100E−9 10E−9 0 5.0 10 15 20 10 15 20 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 25 45 65 85 105 Ipk/Io = 10 Ipk/Io = 20 dc PFO, AVERAGE DISSIPATION (WATTS) freq = 20 kHz 0.7 0.6 Ipk/Io = p 0.5 Ipk/Io = 5 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 SQUARE WAVE dc SQUARE WAVE Ipk/Io = p Ipk/Io = 5 125 145 165 1.4 1.6 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating http://onsemi.com 3 Figure 6. Forward Power Dissipation MBR120ESFT1 1000 TJ, DERATED OPERATING TEMPERATURE (°C) 155 153 C, CAPACITANCE (pF) 151 149 147 145 143 141 139 137 10 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS) 135 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, DC REVERSE VOLTAGE (VOLTS) 400°C/W 235°C/W 324.9°C/W TJ = 25°C RqJA = 25.6°C/W 130°C/W 100 Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. r(t), TRANSIENT THERMAL RESISTANCE 1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 0.01 1 SINGLE PULSE Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.1 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 100 1000 t1 t2 10 DUTY CYCLE, D = t1/t2 qJA = 321.8 °C/W Figure 9. Thermal Response http://onsemi.com 4 MBR120ESFT1 PACKAGE DIMENSIONS SOD−123LF CASE 498−01 ISSUE A E q D A1 A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. DIM A A1 b c D E L HE q MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° MILLIMETERS NOM MAX 0.95 1.00 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° POLARITY INDICATOR OPTIONAL AS NEEDED L b HE q c SOLDERING FOOTPRINT* 0.91 0.036 2.36 0.093 4.19 0.165 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.22 0.048 mm inches MBR120ESFT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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