NRVB130T3G

MBR130, NRVB130 Schottky Power Rectifier, Surface Mount 1.0 A, 30 V, SOD-123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Features • • • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Rating: ♦ Human Body Model = 3 ♦ Machine Model = C NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These are Pb−Free Packages* SOD−123 CASE 425 STYLE 1 MARKING DIAGRAM 1 Mechanical Characteristics • • • • • • Device Marking: S3 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds S3 M G S3 MG G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBR130T1G, NRVB130T1G SOD−123 (Pb−Free) 3,000 / Tape & Reel ** MBR130T3G, NRVB130T3G SOD−123 (Pb−Free) 10,000 / Tape & Reel *** Device ** 8 mm Tape, 7” Reel *** 8 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 April, 2013 − Rev. 5 1 Publication Order Number: MBR130T1/D MBR130, NRVB130 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current (Rated VR) TL = 65°C IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −65 to +125 °C Operating Junction Temperature TJ −65 to +125 °C dv/dt 1000 V/ms A 1.0 A 5.5 Voltage Rate of Change (Rated VR) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Ambient (Note 1) RθJA 230 °C/W Thermal Resistance, Junction to Lead (Note 1) RθJL 108 °C/W Typ Max Unit − − 0.47 0.35 0.45 − 1. FR−4 or FR−5 = 3.5 × 1.5 inches using a 1 inch Cu pad. ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 2) (IF = 0.1 A, TJ = 25°C) (IF = 0.7 A, TJ = 25°C) (IF = 1.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (VR = 5 V, TC = 25°C) IR V mA 60 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MBR130, NRVB130 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 1 TJ = 125°C 75°C 0.1 0.2 0.25 0.3 0.35 25°C 0.4 0.45 0.5 0.55 0.6 1 TJ = 125°C 75°C 0.1 0.65 0.2 0.25 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.4 0.45 0.5 0.55 0.6 0.65 Figure 2. Typical Forward Voltage 0.01 200 TJ = 125°C 180 0.001 C, CAPACITANCE (pF) IR, REVERSE CURRENT (AMPS) 0.35 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage 75°C 0.0001 0.00001 25°C 0.000001 160 140 120 100 80 60 40 20 0.0000001 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 0 0 Figure 3. Typical Reverse Current 1.8 1.6 dc 1.4 RATED VOLTAGE APPLIED 1.2 SQUARE WAVE 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 TL, LEAD TEMPERATURE (°C) 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) 35 Figure 4. Typical Capacitance PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) 0.3 25°C 120 0.9 0.8 0.7 SQUARE WAVE 0.6 dc 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation Figure 5. Current Derating, Lead, RqJL = 1085C/W http://onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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