NSPM1041BMUTBG

NSPM1041B ESD Protection Diode Features • Protection for the following IEC Standards: • IEC61000−4−2 Level 4: ±30 kV Contact Discharge IEC61000−4−5 (Lightning) 125 A (8/20 ms) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Pin 1 Rating IEC 61000−4−2 (ESD) www.onsemi.com Symbol Value Unit ±30 ±30 kV TJ, Tstg −65 to +150 °C IPP 125 A Contact Air Operating Junction and Storage Temperature Range Maximum Peak Pulse Current 8/20 ms @ TA = 25°C, Pin 2 to Pin 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Pin 2 MARKING DIAGRAM MCM UDFN2 CASE 517DF MC M = Specific Device Code = Date Code ORDERING INFORMATION Device Package Shipping† NSPM1041BMUTBG UDFN2 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 October, 2017 − Rev. 5 1 Publication Order Number: NSPM1041/D NSPM1041B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) IPP Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I RDYN IT VC VBR VRWM IR IR VRWM VBR VC IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM V RDYN Breakdown Voltage @ IT IPP Test Current Bi−Directional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM Pin 1 to Pin 2 3.3 V Reverse Working Voltage VRWM Pin 2 to Pin 1 4.8 V Breakdown Voltage VBR IT = 1 mA, Pin 1 to Pin 2 4.5 6.0 V Breakdown Voltage VBR IT = 1 mA, Pin 2 to Pin 1 4.85 6.0 V Reverse Leakage Current IR VRWM = 3.3 V, Pin 1 to Pin 2 1.0 mA Reverse Leakage Current IR VRWM = 4.8 V, Pin 2 to Pin 1 1.0 mA Clamping Voltage (Note 1) VC IPP = 1 A, tp = 8 x 20 ms 5.6 V Clamping Voltage (Note 1) VC IPP = 35 A, tp = 8 x 20 ms 7.2 V Clamping Voltage (Note 1) VC IPP = 80 A, tp = 8 x 20 ms 8.0 V Clamping Voltage (Note 1) VC IPP = 125 A, tp = 8 x 20 ms 10.8 V Clamping Voltage TLP (Note 2) VC IPP = 8 A IPP = 16 A IEC 61000−4−2 Level 2 equivalent (±4 kV Contact, ±8 kV Air) IEC 61000−4−2 Level 4 equivalent (±8 kV Contact, ±16 kV Air) V 5.6 5.8 Dynamic Resistance RDYN TLP Pulse, Pin 1 to Pin 2 0.022 W Dynamic Resistance RDYN TLP Pulse, Pin 2 to Pin 1 0.018 W Junction Capacitance CJ VR = 0 V, f = 1 MHz 480 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform. 2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns. www.onsemi.com 2 NSPM1041B 45 5 40 0 35 −5 30 VOLTAGE (V) VOLTAGE (V) TYPICAL CHARACTERISTICS 25 20 15 10 −10 −15 −20 −25 −30 5 −35 0 −5 −20 0 20 40 60 80 100 −40 −20 120 0 20 40 TIME (ns) 18 16 16 14 14 VC @ Ipk (V) TLP CURRENT (A) 18 12 10 8 6 10 8 6 4 2 2 2 3 4 5 6 0 7 1 2 3 4 5 VC, VOLTAGE (V) VC, VOLTAGE (V) Figure 4. Negative TLP I−V Curve, Pin 1 to Pin 2 11 10 10 9 9 8 8 7 7 6 5 4 5 4 3 2 2 1 1 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 Ipk (A) Ipk (A) Figure 5. Clamping Voltage vs. Peak Pulse Current (tp = 8/20 ms), Pin 2 to Pin 1 Figure 6. Clamping Voltage vs. Peak Pulse Current (tp = 8/20 ms), Pin 1 to Pin 2 www.onsemi.com 3 6 6 3 0 0 Figure 3. Positive TLP I−V Curve, Pin 2 to Pin 1 11 0 120 12 4 VC @ Ipk (V) TLP CURRENT (A) 20 1 100 Figure 2. ESD Clamping Voltage Screenshot P1 to P2, 8 kV Contact per IEC61000−4−2 20 0 80 TIME (ns) Figure 1. ESD Clamping Voltage Screenshot P2 to P1, 8 kV Contact per IEC61000−4−2 0 60 NSPM1041B TYPICAL CHARACTERISTICS 400 350 300 C (pF) 250 200 150 100 50 0 −5 −4 −3 −2 −1 0 1 2 VBias (V) Figure 7. CV Characteristics www.onsemi.com 4 3 4 5 NSPM1041B Transmission Line Pulse (TLP) Measurement L Transmission Line Pulse (TLP) provides current versus voltage (I−V) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in Figure 8. TLP I−V curves of ESD protection devices accurately demonstrate the product’s ESD capability because the 10s of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 9 where an 8 kV IEC 61000−4−2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP I−V curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. For more information on TLP measurements and how to interpret them please refer to AND9007/D. S Attenuator ÷ 50 W Coax Cable 10 MW IM 50 W Coax Cable VM DUT VC Oscilloscope Figure 8. Simplified Schematic of a Typical TLP System Figure 9. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms www.onsemi.com 5 NSPM1041B IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 10. IEC61000−4−2 Spec Device ESD Gun Under Oscilloscope Test 50 W 50 W Cable Figure 11. Diagram of ESD Test Setup ESD Voltage Clamping at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 12. 8 x 20 ms Pulse Waveform www.onsemi.com 6 80 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS UDFN2 2.0x1.25, 1.3P CASE 517DF ISSUE A SCALE 4:1 A B D PIN 1 INDICATOR 2X 0.08 C 2X ÉÉÉ ÉÉÉ ÉÉÉ 0.08 C DATE 06 JUL 2016 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. E DIM A A1 b D E e L TOP VIEW A 0.05 C MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.95 1.05 2.00 BSC 1.25 BSC 1.30 BSC 0.45 0.55 GENERIC MARKING DIAGRAMS* 0.05 C SIDE VIEW A1 C SEATING PLANE e e/2 Style 1 Style 2 = Specific Device Code = Date Code STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE b 2X XXM XX M 0.05 C A B 1 XXM L *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. BOTTOM VIEW RECOMMENDED SOLDERING FOOTPRINT* 2.10 1 STYLE 2: . NO POLARITY 2X 1.10 2X 0.70 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON04628G UDFN2 2.0X1.25, 1.3P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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