NSS12100M3T5G

NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 12 VOLTS, 1.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 350 mW COLLECTOR 3 1 BASE 2 EMITTER • • • • High Continuous Current Capability (1 A) Low VCE(sat) (150 mV Typical @ 500 mA) Small Size 1.2 mm x 1.2 mm This is a Pb-Free Device MARKING DIAGRAM 3 SOT-723 CASE 631AA STYLE 1 VE M Benefits • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25°C) Rating Collector‐Emitter Voltage Collector‐Base Voltage Emitter‐Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -12 -12 -5.0 -1.0 -3.0 Unit Vdc Vdc Vdc Adc 2 1 VE = Specific Device Code M = Date Code ORDERING INFORMATION Device NSS12100M3T5G Package SOT-723 (Pb-Free) Shipping† 8000/ Tape & Reel HBM Class 3B MM Class C †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2007 1 September, 2007 - Rev. 0 Publication Order Number: NSS12100M3/D NSS12100M3T5G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead 3 Junction and Storage Temperature Range Symbol PD (Note 1) Max 460 3.7 RqJA (Note 1) PD (Note 2) 270 625 5.0 RqJA (Note 2) RqJL TJ, Tstg 200 105 -55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage, (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage, (IC = -0.1 mAdc, IE = 0) Emitter - Base Breakdown Voltage, (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current, (VCB = -12 Vdc, IE = 0) Emitter Cutoff Current, (VCES = -5.0 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) Collector - Emitter Saturation Voltage (Note 3) (IC = -0.05 A, IB = -0.005 A) (Note 4) (IC = -0.1 A, IB = -0.002 A) (IC = -0.1 A, IB = -0.010 A) (IC = -0.5 A, IB = -0.050 A) (IC = -1.0 A, IB = -0.100 A) Base - Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.01 A) Base - Emitter Turn-on Voltage (Note 3) (IC = -2.0 A, VCE = -2.0 V) SMALL-SIGNAL CHARACTERISTICS Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 1.0 kW, f = 1.0 MHz, BW = 200 Hz) 1. 2. 3. 4. FR- 4 @ 100 1 oz copper traces. 1 oz copper traces. FR- 4 @ 500 Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. Guaranteed by design but not tested. mm2, mm2, Cibo Cobo NF 40 15 50 20 5.0 pF pF dB hFE 200 120 80 VCE(sat) VBE(sat) VBE(on) -1.05 -1.15 0.95 -1.15 V -0.030 -0.060 -0.040 -0.155 -0.350 -0.035 -0.080 -0.060 -0.220 -0.410 V V V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -12 -12 -5.0 -0.01 -0.01 -0.1 -0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Typ Max Unit http://onsemi.com 2 NSS12100M3T5G 0.40 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 1 -55°C 25°C IC/IB = 10 VCE(sat) = 150°C VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.1 1 0.01 IC, COLLECTOR CURRENT (A) 10 150°C 25°C IC/IB = 100 VCE(sat) = -55°C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 600 150°C (5.0 V) hFE, DC CURRENT GAIN 500 400 150°C (2.0 V) 25°C (5.0 V) 300 25°C (2.0 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.4 IC/IB = 10 1.2 1.0 0.8 0.6 0.4 0.2 0 25°C 150°C VBE(sat) = -55°C 200 -55°C (5.0 V) 100 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) -55°C (2.0 V) 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) Figure 3. DC Current Gain vs. Collector Current VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.2 IC/IB = 100 1.0 VBE(sat) = -55°C 0.8 25°C 0.6 0.4 0.2 0 0.00001 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 150°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 150°C 0.3 0.2 0.1 0 0.001 0.01 0.1 VCE = -3.0 V 1 VBE(on) = -55°C 25°C IC, COLLECTOR CURRENT (A) Figure 5. Base Emitter Saturation Voltage vs. Collector Current Figure 6. Base Emitter Turn-On Voltage vs. Collector Current http://onsemi.com 3 NSS12100M3T5G VCE, COLLECTOR-EMITTER VOLTAGE (V) 3.0 Cibo, INPUT CAPACITANCE (pF) 100 mA 300 mA 2.5 2.0 1.5 1.0 0.5 10 mA 0 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) IC = 500 mA 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 VEB, EMITTER BASE VOLTAGE (V) 6 Cibo(pF) Figure 7. Saturation Region @ 255C 25 Cobo, OUTPUT CAPACITANCE (pF) IC, COLLECTOR CURRENT (A) 10 Figure 8. Input Capacitance 20 Cobo(pF) 15 1.0 ms 1 10 ms 100 ms 1.0 s Power Limit Package Limit 0.01 0.1 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) 100 10 0.1 5 0 0 1 3 4 5 6 7 8 VCB, COLLECTOR BASE VOLTAGE (V) 2 9 10 Figure 9. Output Capacitance Figure 10. Safe Operating Area http://onsemi.com 4 NSS12100M3T5G PACKAGE DIMENSIONS SOT-723 CASE 631AA-01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. -XD b1 -Y3 A E 1 2 L C HE DIM A b b1 C D E e HE L e b 2X 0.08 (0.0032) X Y MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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