NSS12100XV6T1G

NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. Features http://onsemi.com 12 VOLTS, 1.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 300 mW COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER • • • • • High Current Capability (1 A) High Power Handling (Up to 650 mW) Low VCE(s) (150 mV Typical @ 500 mA) Small Size This is a Pb−Free Device 1 SOT−563 CASE 463A STYLE 4 Benefits • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max −12 −12 −5.0 −1.0 −2.0 Unit Vdc Vdc Vdc Adc DEVICE MARKING VE M G G 1 VE = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) HBM Class 3 MM Class C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device NSS12100XV6T1G Package Shipping † SOT−563 4000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 November, 2006 − Rev. 0 1 Publication Order Number: NSS12100XV6/D NSS12100XV6T1G THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead 6 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Symbol PD (Note 1) Max 500 4.0 RqJA (Note 1) PD (Note 2) 250 650 5.2 RqJA (Note 2) RqJL PD Single TJ, Tstg 192 105 1.0 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C/W W °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0) Emitter − Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0) Collector Cutoff Current, (VCB = −12 Vdc, IE = 0) Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) Collector − Emitter Saturation Voltage (Note 3) (IC = −0.05 A, IB = −0.005 A) (Note 4) (IC = −0.1 A, IB = −0.002 A) (IC = −0.1 A, IB = −0.010 A) (IC = −0.5 A, IB = −0.050 A) (IC = −1.0 A, IB = −0.100 A) Base − Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.01 A) Base − Emitter Turn−on Voltage (Note 3) (IC = −2.0 A, VCE = −3.0 V) Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) 1. 2. 3. 4. FR− 4 @ 100 1 oz copper traces. FR− 4 @ 500 1 oz copper traces. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. Guaranteed by design but not tested. mm2, mm2, hFE 200 100 90 − − − − − − − − − − − − −0.030 −0.080 −0.050 −0.200 −0.400 0.95 −1.05 − − − −0.040 −0.100 −0.060 −0.225 −0.440 −1.15 −1.15 50 20 V V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO −12 −12 −5.0 − − − − − −0.02 −0.03 − − − −0.1 −0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Typ Max Unit VCE(sat) VBE(sat) VBE(on) Cibo Cobo V V pF pF http://onsemi.com 2 NSS12100XV6T1G 1.0 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 −55°C IC/IB = 10 VCE(sat) = 150°C 25°C 3.0 IC/IB = 100 2.5 2.0 150°C 1.5 1.0 0.5 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 VCE(sat) = −55°C 25°C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 600 hFE, DC CURRENT GAIN 500 400 300 200 100 0 Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 1.4 150°C (5.0 V) 150°C (2.0 V) 25°C (5.0 V) 25°C (2.0 V) −55°C (5.0 V) −55°C (2.0 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 IC/IB = 10 TA = −55°C 25°C 150°C 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 150°C TA = −55°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.0 0.8 0.6 0.4 0.2 0 Figure 4. Base Emitter Saturation Voltage vs. Collector Current VCE = −1.0 V 10 mA 100 mA 300 mA IC = 500 mA 25°C 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 NSS12100XV6T1G 50 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 45 40 35 30 25 20 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 VCB, COLLECTOR BASE VOLTAGE (V) 10 Cobo(pF) Cibo(pF) 0 1 3 4 2 VEB, EMITTER BASE VOLTAGE (V) 5 Figure 7. Input Capacitance Figure 8. Output Capacitance http://onsemi.com 4 NSS12100XV6T1G PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE F D −X− 6 5 4 A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 1 2 3 E −Y− b 6 PL 5 0.08 (0.003) HE DIM A b C D E e L HE e C M XY STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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