NSS12100UW3TCG

NSS12100UW3TCG 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. http://onsemi.com 12 VOLTS, 1.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 400 mW COLLECTOR 3 1 BASE Features • • • • • • • High Current Capability (1 A) High Power Handling (Up to 740 mW) Low VCE(s) (200 mV Typical @ 500 mA) Small Size Low Noise NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER 3 WDFN3 CASE 506AU 2 1 MARKING DIAGRAM VG M G Benefits • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life 1 VG = Specific Device Code M = Date Code G = Pb−Free Package MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage VCBO −12 Vdc Device Package Shipping† Emitter-Base Voltage VEBO −5.0 Vdc NSS12100UW3TCG WDFN3 (Pb−Free) 3000/ Tape & Reel Collector Current − Continuous Collector Current − Peak IC ICM −1.0 −2.0 Adc NSV12100UW3TCG WDFN3 (Pb−Free) 3000/ Tape & Reel Electrostatic Discharge ESD HBM Class 3B MM Class C Rating Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 1 1 ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS12100UW3/D NSS12100UW3TCG THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation, TA = 25°C Derate above 25°C Symbol Max Unit PD (Note 1) 740 6.0 mW mW/°C RqJA (Note 1) 169 °C/W PD (Note 2) 1.1 9.0 W mW/°C RqJA (Note 2) 110 °C/W Thermal Resistance, Junction−to−Lead 6 RqJL (Note 2) 33 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Thermal Resistance, Junction−to−Ambient 1. FR− 4 @ 100 mm2, 1 oz copper traces. 2. FR− 4 @ 500 mm2, 1 oz copper traces. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage, (IC = −10 mAdc, IB = 0) V(BR)CEO −12 − − Vdc Collector −Base Breakdown Voltage, (IC = −0.1 mAdc, IE = 0) V(BR)CBO −12 − − Vdc Emitter −Base Breakdown Voltage, (IE = −0.1 mAdc, IC = 0) V(BR)EBO −5.0 − − Vdc Collector Cutoff Current, (VCB = −12 Vdc, IE = 0) ICBO − −0.02 −0.1 mAdc Emitter Cutoff Current, (VCES = −5.0 Vdc, IE = 0) IEBO − −0.03 −0.1 mAdc 200 100 75 − − − 400 250 − − − − − − −0.030 −0.080 −0.050 −0.200 −0.400 −0.040 −0.100 −0.060 −0.225 −0.440 − −0.95 −1.15 − −1.05 −1.20 Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS hFE DC Current Gain (Note 3) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) Collector −Emitter Saturation Voltage (Note 3) (IC = −0.05 A, IB = −0.005 A) (Note 4) (IC = −0.1 A, IB = −0.002 A) (IC = −0.1 A, IB = −0.010 A) (IC = −0.5 A, IB = −0.050 A) (IC = −1.0 A, IB = −0.100 A) VCE(sat) Base −Emitter Saturation Voltage (Note 3) (IC = −1.0 A, IB = −0.01 A) VBE(sat) Base −Emitter Turn−on Voltage (Note 3) (IC = −2.0 A, VCE = −1.0 V) VBE(on) V V V Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − 40 50 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − 15 20 pF Delay (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) td − − 20 ns Rise (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) tr − − 90 ns Storage (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) ts − − 140 ns Fall (VCC = −10 V, IC = 750 mA, IB1 = 15 mA) tf − − 100 ns Current −Gain − Bandwidth Product, (IC = −100 mA, VCE = −5 Vdc, f = 100 MHz) fT 200 − − MHz Noise Figure, (IC = −0.2 mA, VCE = −5 Vdc, RS = 2 kW, f = 1 kHz, BW = 200Hz) NF − − 5.0 dB SWITCHING CHARACTERISTICS SMALL− SIGNAL CHARACTERISTICS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 4. Guaranteed by design but not tested. http://onsemi.com 2 NSS12100UW3TCG 0.9 3.0 IC/IB = 10 VCE(sat) = 150°C VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 1.0 25°C 0.8 0.7 −55°C 0.6 0.5 0.4 0.3 0.2 0.1 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 0.001 2.5 2.0 150°C 1.5 1.0 0.5 10 0.001 Figure 1. Collector Emitter Saturation Voltage vs. Collector Current VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN IC/IB = 10 500 150°C (2.0 V) 25°C (5.0 V) 25°C (2.0 V) −55°C (5.0 V) 200 −55°C (2.0 V) 100 1.2 1.0 TA = −55°C 0.8 0.6 25°C 0.4 150°C 0.2 0 0 0.001 0.01 0.1 1 0.001 10 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE = −1.0 V 1.2 1.0 TA = −55°C 0.8 25°C 0.4 150°C 0.2 0 0.01 0.1 0.1 1 10 Figure 4. Base Emitter Saturation Voltage vs. Collector Current 1.4 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 10 1.4 150°C (5.0 V) 0.6 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 600 300 25°C 0 0 400 VCE(sat) = −55°C IC/IB = 100 10 1 1.0 10 mA 100 mA 300 mA IC = 500 mA 0.8 0.6 0.4 0.2 0 0.01 IC, COLLECTOR CURRENT (A) 0.1 1 10 IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current Figure 6. Saturation Region http://onsemi.com 3 100 NSS12100UW3TCG 30 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 50 45 40 Cibo(pF) 35 30 25 20 0 1 2 3 4 VEB, EMITTER BASE VOLTAGE (V) 5 25 Cobo(pF) 20 15 10 5 0 0 Figure 7. Input Capacitance 1 2 3 4 5 6 7 8 VCB, COLLECTOR BASE VOLTAGE (V) Figure 8. Output Capacitance http://onsemi.com 4 9 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN3 2x2, 1.3P CASE 506AU ISSUE A DATE 18 AUG 2016 1 SCALE 4:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 2X 0.10 C 2X 0.10 C ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ DIM A A1 A3 b D D2 E E2 e K L E MIN 0.70 0.00 0.25 1.40 0.90 0.35 MILLIMETERS NOM MAX 0.75 0.80 0.05 0.20 REF 0.30 0.35 2.00 BSC 1.50 1.60 2.00 BSC 1.00 1.10 1.30 BSC 0.35 REF 0.40 0.45 MIN 0.028 0.000 INCHES NOM 0.030 0.008 REF 0.012 0.079 BSC 0.055 0.059 0.079 BSC 0.035 0.039 0.051 BSC 0.014 REF 0.014 0.016 0.010 MAX 0.031 0.002 0.014 0.063 0.043 0.018 TOP VIEW GENERIC MARKING DIAGRAM* A 0.10 C XX M G 8X 0.08 C SEATING PLANE (A3) SIDE VIEW A1 1 C XX = Specific Device Code M = Date Code D2 e 2 1 2X *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. e/2 L K SOLDERING FOOTPRINT* 1.300 2X E2 0.400 0.600 0.250 3 3X b 0.10 C A B 0.05 C NOTE 3 1.100 0.300 BOTTOM VIEW 0.400 0.275 1.600 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON21416D WDFN3 2X2, 1.3P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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