NSS40500UW3T2G

NSS40500UW3T2G 40 V, 6.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU’s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. • This is a Pb−Free Device MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current − Continuous Collector Current − Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max −40 −40 −7.0 −5.0 −6.0 Unit Vdc Vdc Vdc Adc A 1 3 2 http://onsemi.com −40 VOLTS 6.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 65 mW COLLECTOR 3 1 BASE 2 EMITTER WDFN3 CASE 506AU MARKING DIAGRAM VA M G 1 VA = Specific Device Code M = Date Code G = Pb−Free Package HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Lead #1 Total Device Dissipation (Single Pulse < 10 sec) Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) RqJL (Note 2) PDsingle (Notes 2 & 3) TJ, Tstg Max 875 7.0 143 1.5 11.8 85 23 3.0 −55 to +150 Unit mW mW/°C °C/W W mW/°C °C/W °C/W W °C ORDERING INFORMATION Device NSS40500UW3T2G Package WDFN3 (Pb−Free) Shipping† 3000/ Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR− 4 @ 100 mm2, 1 oz copper traces. 2. FR− 4 @ 500 mm2, 1 oz copper traces. 3. Thermal response. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 1 1 Publication Order Number: NSS40500UW3/D NSS40500UW3T2G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) Collector − Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) Emitter − Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = −40 Vdc, IE = 0) Emitter Cutoff Current (VEB = −7.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −10 mA, VCE = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) (IC = −3.0 A, VCE = −2.0 V) Collector − Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (Note 5) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.020 A) (IC = −3.0 A, IB = −0.030 A) (IC = −4.0 A, IB = −0.400 A) Base − Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) Base − Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) SWITCHING CHARACTERISTICS Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. td tr ts tf − − − − − − − − 70 150 600 160 ns ns ns ns hFE 250 250 220 180 150 − − − − − − − 300 250 200 −0.010 −0.065 −0.110 −0.190 −0.310 −0.215 −0.76 −0.80 − − − − − − −0.015 −0.080 −0.130 −0.220 −0.340 −0.260 −0.900 −0.900 − 475 150 V V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO −40 −40 −7.0 − − − − − − − − − − −0.1 −0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Typical Max Unit VCE(sat) VBE(sat) VBE(on) fT Cibo Cobo − − 100 − − V V MHz pF pF http://onsemi.com 2 NSS40500UW3T2G 0.5 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) IC/IB = 10 0.4 0.3 VCE(sat) = 150°C 0.2 25°C 0.1 −55°C 0 0.001 0.01 0.1 1.0 10 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.001 25°C 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) VCE(sat) = −55°C 150°C IC/IB = 100 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current 850 750 hFE, DC CURRENT GAIN 650 550 450 350 250 150 50 0.001 0.01 150°C (5 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.4 1.2 1.0 −55°C 0.8 0.6 150°C 0.4 0.2 0.001 25°C 150°C (2 V) 25°C (5 V) 25°C (2 V) −55°C (5 V) −55°C (2 V) 0.1 1 10 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. DC Current Gain vs. Collector Current Figure 4. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE EMITTER TURN−ON VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.001 0.01 0.1 1.0 10 150°C VCE = −1.0 V −55°C 25°C VCE, COLLECTOR−EMITTER VOLTAGE (V) 1.0 0.8 0.6 0.4 0.2 0 0.01 100 mA 300 mA 10 mA IC = 500 mA 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 5. Base Emitter Turn−On Voltage vs. Collector Current http://onsemi.com 3 Figure 6. Saturation Region NSS40500UW3T2G 500 Cibo, INPUT CAPACITANCE (pF) 450 400 350 300 250 200 150 0 1.0 2.0 3.0 4.0 5.0 6.0 Cobo, OUTPUT CAPACITANCE (pF) Cibo (pF) 160 Cobo (pF) 140 120 100 80 60 40 0 5.0 10 15 20 25 30 35 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 7. Input Capacitance Figure 8. Output Capacitance 10 1 IC (A) 1.0 mS 10 mS 100 mS 1.0 S Thermal Limit 1 VCE (Vdc) 10 100 0.1 0.01 0.1 Figure 9. PNP Safe Operating Area http://onsemi.com 4 NSS40500UW3T2G PACKAGE DIMENSIONS WDFN3 CASE 506AU−01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994 . 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L MIN 0.70 0.00 0.25 1.40 0.90 0.35 MILLIMETERS NOM MAX 0.75 0.80 0.05 0.20 REF 0.30 0.35 2.00 BSC 1.50 1.60 2.00 BSC 1.00 1.10 1.30 BSC 0.35 REF 0.40 0.45 MIN 0.028 0.000 0.010 INCHES NOM 0.030 MAX 0.031 0.002 0.014 0.063 0.043 0.018 D A B PIN ONE REFERENCE E 2X 0.10 C 2X 0.008 REF 0.012 0.079 BSC 0.055 0.059 0.079 BSC 0.035 0.039 0.051 BSC 0.014 REF 0.014 0.016 0.10 C 0.10 C 8X 0.08 C SEATING PLANE A1 2X L K 0.400 1.600 E2 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 0.275 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ D2 e 1 TOP VIEW SOLDERING FOOTPRINT* A 2X 1.300 0.400 0.600 0.250 1.100 SIDE VIEW (A3) C 2 e/2 0.300 3 3X b 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW http://onsemi.com 5 NSS40500UW3/D